Patent
US 9,359,693GALLIUM-NITRIDE-ON-DIAMOND WAFERS AND MANUFACTURING EQUIPMENT AND METHODS OF MANUFACTURE
Daniel Francis
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,359,693Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Figure 2 illustrates the definition of bow measurement.
Figure 3 is a block diagram illustrating a preferred method for manufacturing GaN-on-diamond engineered wafers.
Figure 4 shows (a) an illustration of the parts of wafer 700 and (b) carrier wafer 720.
Figure 5 shows (a) an illustration of the parts of wafer 730 and (b) carrier wafer 740.
Figure 6 is an illustration of an exemplary bonding jig used in the process for manufacturing GaN-on-diamond wafers.
Figure 7 is an illustration of the elements of wafer sandwich 750 ready for diamond deposition.
Figure 8 is an illustration of the elements of diamond growth chamber used in the preferred process for manufacturing GaN-on-diamond engineered wafers.
Figure 9 depicts laser trimming of wafer 760.
Figure 10 illustrates one embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 11 shows an alternative embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 12 illustrates the parts of wafer 710, gallium nitride epilayers with in-situ silicon nitride.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthetic diamond growth comprising the steps of: (a) providing a vacuum chamber having means for evacuating; (b) providing an engineered wafer comprising at least one layer of gallium nitride, said wafer having a diameter and a growth surface; (c) providing a table having a surface for holding said wafer, said table operatively configured to rotate along an axis perpendicular to said engineered wafer; (d) placing said wafer on said surface; (e) providing a cooled chuck with means for monitoring a temperature of said chuck; (f) placing said table onto said chuck; (g) maintaining a gap between said table and said chuck; (h) providing a multiplicity of refractory-metal filaments arranged in a linear one-dimensional array stretched in proximity of said wafer, said array being parallel to said growth surface, said multiplicity of filaments distanced from said growth surface by not more than 25 mm; (i) providing reaction gases to the chamber wherein said reaction gases comprise hydrogen and at least one carbon-bearing gas, and establish a process pressure; and (j) providing electrical power to said multiplicity of refractory-metal filaments, said electrical power being not less than 3 kW for one wafer, for a time sufficient to grow desired thickness of synthetic diamond, wherein said cooled chuck maintains said chuck temperature below 800 C. 2 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The method of claim 1, wherein said growth surface is comprised of silicon nitride. withdrawn
The method of claim 1, wherein said engineered wafer comprises at least one layer including silicon. withdrawn
A substrate prepared for synthetic diamond deposition comprising: (a) a silicon wafer of thickness greater than 0.2 mm; (b) a layer of glass; (c) a layer of polysilicon; (d) a first silicon nitride layer; (e) a multilayered structure layer including at least one layer of gallium nitride; and (f) a second silicon nitride layer with thickness not greater than 100 nm, wherein the layer of glass bonds the silicon wafer to the layer of polysilicon, the first silicon nitride layer is disposed on the layer of polysilicon, the multilayer structure including at least one layer of gallium nitride is disposed on the first silicon nitride layer, and the second silicon nitride layer is disposed on the multilayer structure including at least one layer of gallium nitride, the second nitride layer having an exposed surface prepared for synthetic diamond deposition.
The substrate of claim 5, wherein said gallium nitride layer features Ga-facing surface parallel and proximal to said first silicon nitride.
The substrate of claim 5, wherein a surface of said gallium nitride layer is a non-polar or semipolar surface of gallium nitride. 3 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The substrate of claim 5, wherein said glass has a melting temperature above 1000 C.
The substrate of claim 5, wherein said second silicon nitride layer is an in-situ silicon nitride. 4
Layer stacks claimed or described, ordered top of device to substrate.
substrate prepared for synthetic diamond deposition
Materials described outside the worked examples.
synthetic diamond
C
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,359,693Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Figure 2 illustrates the definition of bow measurement.
Figure 3 is a block diagram illustrating a preferred method for manufacturing GaN-on-diamond engineered wafers.
Figure 4 shows (a) an illustration of the parts of wafer 700 and (b) carrier wafer 720.
Figure 5 shows (a) an illustration of the parts of wafer 730 and (b) carrier wafer 740.
Figure 6 is an illustration of an exemplary bonding jig used in the process for manufacturing GaN-on-diamond wafers.
Figure 7 is an illustration of the elements of wafer sandwich 750 ready for diamond deposition.
Figure 8 is an illustration of the elements of diamond growth chamber used in the preferred process for manufacturing GaN-on-diamond engineered wafers.
Figure 9 depicts laser trimming of wafer 760.
Figure 10 illustrates one embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 11 shows an alternative embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 12 illustrates the parts of wafer 710, gallium nitride epilayers with in-situ silicon nitride.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthetic diamond growth comprising the steps of: (a) providing a vacuum chamber having means for evacuating; (b) providing an engineered wafer comprising at least one layer of gallium nitride, said wafer having a diameter and a growth surface; (c) providing a table having a surface for holding said wafer, said table operatively configured to rotate along an axis perpendicular to said engineered wafer; (d) placing said wafer on said surface; (e) providing a cooled chuck with means for monitoring a temperature of said chuck; (f) placing said table onto said chuck; (g) maintaining a gap between said table and said chuck; (h) providing a multiplicity of refractory-metal filaments arranged in a linear one-dimensional array stretched in proximity of said wafer, said array being parallel to said growth surface, said multiplicity of filaments distanced from said growth surface by not more than 25 mm; (i) providing reaction gases to the chamber wherein said reaction gases comprise hydrogen and at least one carbon-bearing gas, and establish a process pressure; and (j) providing electrical power to said multiplicity of refractory-metal filaments, said electrical power being not less than 3 kW for one wafer, for a time sufficient to grow desired thickness of synthetic diamond, wherein said cooled chuck maintains said chuck temperature below 800 C. 2 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The method of claim 1, wherein said growth surface is comprised of silicon nitride. withdrawn
The method of claim 1, wherein said engineered wafer comprises at least one layer including silicon. withdrawn
A substrate prepared for synthetic diamond deposition comprising: (a) a silicon wafer of thickness greater than 0.2 mm; (b) a layer of glass; (c) a layer of polysilicon; (d) a first silicon nitride layer; (e) a multilayered structure layer including at least one layer of gallium nitride; and (f) a second silicon nitride layer with thickness not greater than 100 nm, wherein the layer of glass bonds the silicon wafer to the layer of polysilicon, the first silicon nitride layer is disposed on the layer of polysilicon, the multilayer structure including at least one layer of gallium nitride is disposed on the first silicon nitride layer, and the second silicon nitride layer is disposed on the multilayer structure including at least one layer of gallium nitride, the second nitride layer having an exposed surface prepared for synthetic diamond deposition.
The substrate of claim 5, wherein said gallium nitride layer features Ga-facing surface parallel and proximal to said first silicon nitride.
The substrate of claim 5, wherein a surface of said gallium nitride layer is a non-polar or semipolar surface of gallium nitride. 3 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The substrate of claim 5, wherein said glass has a melting temperature above 1000 C.
The substrate of claim 5, wherein said second silicon nitride layer is an in-situ silicon nitride. 4
Layer stacks claimed or described, ordered top of device to substrate.
substrate prepared for synthetic diamond deposition
Materials described outside the worked examples.
synthetic diamond
C
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,359,693Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Figure 2 illustrates the definition of bow measurement.
Figure 3 is a block diagram illustrating a preferred method for manufacturing GaN-on-diamond engineered wafers.
Figure 4 shows (a) an illustration of the parts of wafer 700 and (b) carrier wafer 720.
Figure 5 shows (a) an illustration of the parts of wafer 730 and (b) carrier wafer 740.
Figure 6 is an illustration of an exemplary bonding jig used in the process for manufacturing GaN-on-diamond wafers.
Figure 7 is an illustration of the elements of wafer sandwich 750 ready for diamond deposition.
Figure 8 is an illustration of the elements of diamond growth chamber used in the preferred process for manufacturing GaN-on-diamond engineered wafers.
Figure 9 depicts laser trimming of wafer 760.
Figure 10 illustrates one embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 11 shows an alternative embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 12 illustrates the parts of wafer 710, gallium nitride epilayers with in-situ silicon nitride.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthetic diamond growth comprising the steps of: (a) providing a vacuum chamber having means for evacuating; (b) providing an engineered wafer comprising at least one layer of gallium nitride, said wafer having a diameter and a growth surface; (c) providing a table having a surface for holding said wafer, said table operatively configured to rotate along an axis perpendicular to said engineered wafer; (d) placing said wafer on said surface; (e) providing a cooled chuck with means for monitoring a temperature of said chuck; (f) placing said table onto said chuck; (g) maintaining a gap between said table and said chuck; (h) providing a multiplicity of refractory-metal filaments arranged in a linear one-dimensional array stretched in proximity of said wafer, said array being parallel to said growth surface, said multiplicity of filaments distanced from said growth surface by not more than 25 mm; (i) providing reaction gases to the chamber wherein said reaction gases comprise hydrogen and at least one carbon-bearing gas, and establish a process pressure; and (j) providing electrical power to said multiplicity of refractory-metal filaments, said electrical power being not less than 3 kW for one wafer, for a time sufficient to grow desired thickness of synthetic diamond, wherein said cooled chuck maintains said chuck temperature below 800 C. 2 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The method of claim 1, wherein said growth surface is comprised of silicon nitride. withdrawn
The method of claim 1, wherein said engineered wafer comprises at least one layer including silicon. withdrawn
A substrate prepared for synthetic diamond deposition comprising: (a) a silicon wafer of thickness greater than 0.2 mm; (b) a layer of glass; (c) a layer of polysilicon; (d) a first silicon nitride layer; (e) a multilayered structure layer including at least one layer of gallium nitride; and (f) a second silicon nitride layer with thickness not greater than 100 nm, wherein the layer of glass bonds the silicon wafer to the layer of polysilicon, the first silicon nitride layer is disposed on the layer of polysilicon, the multilayer structure including at least one layer of gallium nitride is disposed on the first silicon nitride layer, and the second silicon nitride layer is disposed on the multilayer structure including at least one layer of gallium nitride, the second nitride layer having an exposed surface prepared for synthetic diamond deposition.
The substrate of claim 5, wherein said gallium nitride layer features Ga-facing surface parallel and proximal to said first silicon nitride.
The substrate of claim 5, wherein a surface of said gallium nitride layer is a non-polar or semipolar surface of gallium nitride. 3 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The substrate of claim 5, wherein said glass has a melting temperature above 1000 C.
The substrate of claim 5, wherein said second silicon nitride layer is an in-situ silicon nitride. 4
Layer stacks claimed or described, ordered top of device to substrate.
substrate prepared for synthetic diamond deposition
Materials described outside the worked examples.
synthetic diamond
C
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,359,693Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Figure 2 illustrates the definition of bow measurement.
Figure 3 is a block diagram illustrating a preferred method for manufacturing GaN-on-diamond engineered wafers.
Figure 4 shows (a) an illustration of the parts of wafer 700 and (b) carrier wafer 720.
Figure 5 shows (a) an illustration of the parts of wafer 730 and (b) carrier wafer 740.
Figure 6 is an illustration of an exemplary bonding jig used in the process for manufacturing GaN-on-diamond wafers.
Figure 7 is an illustration of the elements of wafer sandwich 750 ready for diamond deposition.
Figure 8 is an illustration of the elements of diamond growth chamber used in the preferred process for manufacturing GaN-on-diamond engineered wafers.
Figure 9 depicts laser trimming of wafer 760.
Figure 10 illustrates one embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 11 shows an alternative embodiment of a completed GaN-on-diamond engineered wafer manufactured using the preferred process.
Figure 12 illustrates the parts of wafer 710, gallium nitride epilayers with in-situ silicon nitride.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthetic diamond growth comprising the steps of: (a) providing a vacuum chamber having means for evacuating; (b) providing an engineered wafer comprising at least one layer of gallium nitride, said wafer having a diameter and a growth surface; (c) providing a table having a surface for holding said wafer, said table operatively configured to rotate along an axis perpendicular to said engineered wafer; (d) placing said wafer on said surface; (e) providing a cooled chuck with means for monitoring a temperature of said chuck; (f) placing said table onto said chuck; (g) maintaining a gap between said table and said chuck; (h) providing a multiplicity of refractory-metal filaments arranged in a linear one-dimensional array stretched in proximity of said wafer, said array being parallel to said growth surface, said multiplicity of filaments distanced from said growth surface by not more than 25 mm; (i) providing reaction gases to the chamber wherein said reaction gases comprise hydrogen and at least one carbon-bearing gas, and establish a process pressure; and (j) providing electrical power to said multiplicity of refractory-metal filaments, said electrical power being not less than 3 kW for one wafer, for a time sufficient to grow desired thickness of synthetic diamond, wherein said cooled chuck maintains said chuck temperature below 800 C. 2 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The method of claim 1, wherein said growth surface is comprised of silicon nitride. withdrawn
The method of claim 1, wherein said engineered wafer comprises at least one layer including silicon. withdrawn
A substrate prepared for synthetic diamond deposition comprising: (a) a silicon wafer of thickness greater than 0.2 mm; (b) a layer of glass; (c) a layer of polysilicon; (d) a first silicon nitride layer; (e) a multilayered structure layer including at least one layer of gallium nitride; and (f) a second silicon nitride layer with thickness not greater than 100 nm, wherein the layer of glass bonds the silicon wafer to the layer of polysilicon, the first silicon nitride layer is disposed on the layer of polysilicon, the multilayer structure including at least one layer of gallium nitride is disposed on the first silicon nitride layer, and the second silicon nitride layer is disposed on the multilayer structure including at least one layer of gallium nitride, the second nitride layer having an exposed surface prepared for synthetic diamond deposition.
The substrate of claim 5, wherein said gallium nitride layer features Ga-facing surface parallel and proximal to said first silicon nitride.
The substrate of claim 5, wherein a surface of said gallium nitride layer is a non-polar or semipolar surface of gallium nitride. 3 Serial No: 13/781,054 Atty. Docket No: PF₁₂₅₀-US-2 withdrawn
The substrate of claim 5, wherein said glass has a melting temperature above 1000 C.
The substrate of claim 5, wherein said second silicon nitride layer is an in-situ silicon nitride. 4
Layer stacks claimed or described, ordered top of device to substrate.
substrate prepared for synthetic diamond deposition
Materials described outside the worked examples.
synthetic diamond
C
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows prior art high-electron mobility transistor epilayer structure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
AlGaN/GaN HEMT
refractory-metal filaments
silicon nitride
Si₃N₄
silicon
Si
glass
polysilicon
hydrogen
H₂
carbon-bearing gas
methane
CH₄
AlGaN
| — |
Duration | 5–30 minutes | — |
Thickness | 10–100 nm | — |
Thickness | 0.1–10 µm | — |
Thickness | 0.1–2 µm | — |
Thickness | 20–300 um | — |
Thickness | 650–950 um | — |
Thickness | 10–60 nm | — |
Thickness | ≤ 4 mm | — |
Pressure | ≤ 1 Torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 0.2 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 nm | — |
AlGaN/GaN HEMT
refractory-metal filaments
silicon nitride
Si₃N₄
silicon
Si
glass
polysilicon
hydrogen
H₂
carbon-bearing gas
methane
CH₄
AlGaN
| — |
Duration | 5–30 minutes | — |
Thickness | 10–100 nm | — |
Thickness | 0.1–10 µm | — |
Thickness | 0.1–2 µm | — |
Thickness | 20–300 um | — |
Thickness | 650–950 um | — |
Thickness | 10–60 nm | — |
Thickness | ≤ 4 mm | — |
Pressure | ≤ 1 Torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 0.2 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 nm | — |
AlGaN/GaN HEMT
refractory-metal filaments
silicon nitride
Si₃N₄
silicon
Si
glass
polysilicon
hydrogen
H₂
carbon-bearing gas
methane
CH₄
AlGaN
| — |
Duration | 5–30 minutes | — |
Thickness | 10–100 nm | — |
Thickness | 0.1–10 µm | — |
Thickness | 0.1–2 µm | — |
Thickness | 20–300 um | — |
Thickness | 650–950 um | — |
Thickness | 10–60 nm | — |
Thickness | ≤ 4 mm | — |
Pressure | ≤ 1 Torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 0.2 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 nm | — |
AlGaN/GaN HEMT
refractory-metal filaments
silicon nitride
Si₃N₄
silicon
Si
glass
polysilicon
hydrogen
H₂
carbon-bearing gas
methane
CH₄
AlGaN
| — |
Duration | 5–30 minutes | — |
Thickness | 10–100 nm | — |
Thickness | 0.1–10 µm | — |
Thickness | 0.1–2 µm | — |
Thickness | 20–300 um | — |
Thickness | 650–950 um | — |
Thickness | 10–60 nm | — |
Thickness | ≤ 4 mm | — |
Pressure | ≤ 1 Torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 0.2 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 nm | — |