Patent
US 10,734,439METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING A PLURALITY OF GALLIUM NITRIDE DIODES
François Templier
US
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Atlas literature
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US 10,734,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 is a cross-section view illustrating an alternative embodiment of the method of
Figures 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 H, 1I SVG 16095335.10-19-2018.JNGPRICHRXEAPX0.SPEC.3.32.1536.2809.1558.2847.svg 0.127 0.073 Chemistry Black and white I and
Figures 3A, 3 B, 3C, 3D are cross-section views illustrating another alternative embodiment of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an optoelectronic device, comprising the successive steps of: a) transferring, onto a surface of a control integrated circuit [[(110)]] comprising a plurality of metal connection pads [[(113)]], an active diode stack [[(150)]] comprising at least first [[(153)]] and second [[(157)]] doped semiconductor layers of opposite conductivity types, so that the second layer [[(157)]] of the stack is electrically connected to the metal pads [[(113)]] of the control circuit [[(110)]]; and b) forming in the active stack [[(150)]] trenches [[(170)]] delimiting a plurality of diodes [[(172)]] connected to different metal pads [[(113)]] of the control circuit [[(110)]]. Currently amended
The method of claim 1, further comprising, before step a), at least one of the steps of: a step of depositing at least one first metal layer [[(116)]] over substantially the entire surface of the control circuit [[(110)]] on the side of the metal pads [[(113)]]; and a step of depositing at least one second metal layer [[(159)]] over substantially the entire surface of the second semiconductor layer [[(157)]] opposite to the first semiconductor layer [[(153)]]. Currently amended
The method of laim [[s]] 2 [[to 4]], wherein at least one of the first [[(116)]] and second [[(159)]] metal layers comprises a bonding layer made of Ti, Ni, Pt, Sn, Au, Ag, Al, Pd, W, Pb, Cu, AuSn, TiSn, NiSn, or of an alloy of all or part of these materials. Currently amended
The method of laim [[s]] 2 [[to 5]], wherein the trenches [[(170)]] formed at step b) extend all along the height of the active stack [[(150)]] and cross the first [[(116)]] and second [[(159)]] metal layers. Currently amended
The method of laim [[s]] 1 [[to 6]], wherein, during the implementation of step a), the active stack [[(150)]] is supported by a support substrate [[(201)]] located on the side of the first semiconductor layer (153) opposite to the second semiconductor layer [[(157)]], the method further comprising, between step a) and step b), a step of removing the support substrate [[(201)]]. Currently amended
The method f claim [[s]] 1 [[to 7]], further comprising, after step b), a step of depositing, on each diode [[(172)]], an electrode [[(178; 182)]] on top of and in contact with the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]]. Currently amended
The method of claim 8, wherein said electrodes [[(178)]] form a continuous metal grid arranged so that, at the level of each diode [[(172)]], in a peripheral portion of the diode [[(172)]], the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]] is in contact with the grid and, in a central portion of the diode [[(172)]], the surface of the first semiconductor la yer[[E (153)]] is not coated with the grid. Currently amended
The method of claim 8, wherein said electrodes [[(182)]] form a continuous layer made of a transparent conductive material, substantially coating the entire surface of the device. Currently amended
The method of laim [[s]] 1 [[to 10]], wherein said semiconductor diodes [[(172)]] are light-emitting diodes. Currently amended
The method of claim 11, further comprising, after step b), a step of transferring, onto the surface of the device opposite to the control circuit [[(110)]], a photoluminescent conversion stack [[(203)]] with multiple quantum wells substantially coating the entire surface of the device.
The method of laim [[s]] 1 [[to 10]], wherein said diodes are photodiodes. Currently amended
The method of laim [[s]] 1 [[to 14]], wherein the first [[(153)]] and second [[(157)]] semiconductor layers are gallium nitride layers, said diodes [[(172)]] bein g gallium nitride diodes. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with trench-delimited diodes on control integrated circuit
Materials described outside the worked examples.
N-type doped gallium nitride layer
GaN
metal layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,734,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 is a cross-section view illustrating an alternative embodiment of the method of
Figures 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 H, 1I SVG 16095335.10-19-2018.JNGPRICHRXEAPX0.SPEC.3.32.1536.2809.1558.2847.svg 0.127 0.073 Chemistry Black and white I and
Figures 3A, 3 B, 3C, 3D are cross-section views illustrating another alternative embodiment of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an optoelectronic device, comprising the successive steps of: a) transferring, onto a surface of a control integrated circuit [[(110)]] comprising a plurality of metal connection pads [[(113)]], an active diode stack [[(150)]] comprising at least first [[(153)]] and second [[(157)]] doped semiconductor layers of opposite conductivity types, so that the second layer [[(157)]] of the stack is electrically connected to the metal pads [[(113)]] of the control circuit [[(110)]]; and b) forming in the active stack [[(150)]] trenches [[(170)]] delimiting a plurality of diodes [[(172)]] connected to different metal pads [[(113)]] of the control circuit [[(110)]]. Currently amended
The method of claim 1, further comprising, before step a), at least one of the steps of: a step of depositing at least one first metal layer [[(116)]] over substantially the entire surface of the control circuit [[(110)]] on the side of the metal pads [[(113)]]; and a step of depositing at least one second metal layer [[(159)]] over substantially the entire surface of the second semiconductor layer [[(157)]] opposite to the first semiconductor layer [[(153)]]. Currently amended
The method of laim [[s]] 2 [[to 4]], wherein at least one of the first [[(116)]] and second [[(159)]] metal layers comprises a bonding layer made of Ti, Ni, Pt, Sn, Au, Ag, Al, Pd, W, Pb, Cu, AuSn, TiSn, NiSn, or of an alloy of all or part of these materials. Currently amended
The method of laim [[s]] 2 [[to 5]], wherein the trenches [[(170)]] formed at step b) extend all along the height of the active stack [[(150)]] and cross the first [[(116)]] and second [[(159)]] metal layers. Currently amended
The method of laim [[s]] 1 [[to 6]], wherein, during the implementation of step a), the active stack [[(150)]] is supported by a support substrate [[(201)]] located on the side of the first semiconductor layer (153) opposite to the second semiconductor layer [[(157)]], the method further comprising, between step a) and step b), a step of removing the support substrate [[(201)]]. Currently amended
The method f claim [[s]] 1 [[to 7]], further comprising, after step b), a step of depositing, on each diode [[(172)]], an electrode [[(178; 182)]] on top of and in contact with the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]]. Currently amended
The method of claim 8, wherein said electrodes [[(178)]] form a continuous metal grid arranged so that, at the level of each diode [[(172)]], in a peripheral portion of the diode [[(172)]], the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]] is in contact with the grid and, in a central portion of the diode [[(172)]], the surface of the first semiconductor la yer[[E (153)]] is not coated with the grid. Currently amended
The method of claim 8, wherein said electrodes [[(182)]] form a continuous layer made of a transparent conductive material, substantially coating the entire surface of the device. Currently amended
The method of laim [[s]] 1 [[to 10]], wherein said semiconductor diodes [[(172)]] are light-emitting diodes. Currently amended
The method of claim 11, further comprising, after step b), a step of transferring, onto the surface of the device opposite to the control circuit [[(110)]], a photoluminescent conversion stack [[(203)]] with multiple quantum wells substantially coating the entire surface of the device.
The method of laim [[s]] 1 [[to 10]], wherein said diodes are photodiodes. Currently amended
The method of laim [[s]] 1 [[to 14]], wherein the first [[(153)]] and second [[(157)]] semiconductor layers are gallium nitride layers, said diodes [[(172)]] bein g gallium nitride diodes. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with trench-delimited diodes on control integrated circuit
Materials described outside the worked examples.
N-type doped gallium nitride layer
GaN
metal layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,734,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 is a cross-section view illustrating an alternative embodiment of the method of
Figures 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 H, 1I SVG 16095335.10-19-2018.JNGPRICHRXEAPX0.SPEC.3.32.1536.2809.1558.2847.svg 0.127 0.073 Chemistry Black and white I and
Figures 3A, 3 B, 3C, 3D are cross-section views illustrating another alternative embodiment of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an optoelectronic device, comprising the successive steps of: a) transferring, onto a surface of a control integrated circuit [[(110)]] comprising a plurality of metal connection pads [[(113)]], an active diode stack [[(150)]] comprising at least first [[(153)]] and second [[(157)]] doped semiconductor layers of opposite conductivity types, so that the second layer [[(157)]] of the stack is electrically connected to the metal pads [[(113)]] of the control circuit [[(110)]]; and b) forming in the active stack [[(150)]] trenches [[(170)]] delimiting a plurality of diodes [[(172)]] connected to different metal pads [[(113)]] of the control circuit [[(110)]]. Currently amended
The method of claim 1, further comprising, before step a), at least one of the steps of: a step of depositing at least one first metal layer [[(116)]] over substantially the entire surface of the control circuit [[(110)]] on the side of the metal pads [[(113)]]; and a step of depositing at least one second metal layer [[(159)]] over substantially the entire surface of the second semiconductor layer [[(157)]] opposite to the first semiconductor layer [[(153)]]. Currently amended
The method of laim [[s]] 2 [[to 4]], wherein at least one of the first [[(116)]] and second [[(159)]] metal layers comprises a bonding layer made of Ti, Ni, Pt, Sn, Au, Ag, Al, Pd, W, Pb, Cu, AuSn, TiSn, NiSn, or of an alloy of all or part of these materials. Currently amended
The method of laim [[s]] 2 [[to 5]], wherein the trenches [[(170)]] formed at step b) extend all along the height of the active stack [[(150)]] and cross the first [[(116)]] and second [[(159)]] metal layers. Currently amended
The method of laim [[s]] 1 [[to 6]], wherein, during the implementation of step a), the active stack [[(150)]] is supported by a support substrate [[(201)]] located on the side of the first semiconductor layer (153) opposite to the second semiconductor layer [[(157)]], the method further comprising, between step a) and step b), a step of removing the support substrate [[(201)]]. Currently amended
The method f claim [[s]] 1 [[to 7]], further comprising, after step b), a step of depositing, on each diode [[(172)]], an electrode [[(178; 182)]] on top of and in contact with the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]]. Currently amended
The method of claim 8, wherein said electrodes [[(178)]] form a continuous metal grid arranged so that, at the level of each diode [[(172)]], in a peripheral portion of the diode [[(172)]], the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]] is in contact with the grid and, in a central portion of the diode [[(172)]], the surface of the first semiconductor la yer[[E (153)]] is not coated with the grid. Currently amended
The method of claim 8, wherein said electrodes [[(182)]] form a continuous layer made of a transparent conductive material, substantially coating the entire surface of the device. Currently amended
The method of laim [[s]] 1 [[to 10]], wherein said semiconductor diodes [[(172)]] are light-emitting diodes. Currently amended
The method of claim 11, further comprising, after step b), a step of transferring, onto the surface of the device opposite to the control circuit [[(110)]], a photoluminescent conversion stack [[(203)]] with multiple quantum wells substantially coating the entire surface of the device.
The method of laim [[s]] 1 [[to 10]], wherein said diodes are photodiodes. Currently amended
The method of laim [[s]] 1 [[to 14]], wherein the first [[(153)]] and second [[(157)]] semiconductor layers are gallium nitride layers, said diodes [[(172)]] bein g gallium nitride diodes. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with trench-delimited diodes on control integrated circuit
Materials described outside the worked examples.
N-type doped gallium nitride layer
GaN
metal layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,734,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 is a cross-section view illustrating an alternative embodiment of the method of
Figures 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 H, 1I SVG 16095335.10-19-2018.JNGPRICHRXEAPX0.SPEC.3.32.1536.2809.1558.2847.svg 0.127 0.073 Chemistry Black and white I and
Figures 3A, 3 B, 3C, 3D are cross-section views illustrating another alternative embodiment of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an optoelectronic device, comprising the successive steps of: a) transferring, onto a surface of a control integrated circuit [[(110)]] comprising a plurality of metal connection pads [[(113)]], an active diode stack [[(150)]] comprising at least first [[(153)]] and second [[(157)]] doped semiconductor layers of opposite conductivity types, so that the second layer [[(157)]] of the stack is electrically connected to the metal pads [[(113)]] of the control circuit [[(110)]]; and b) forming in the active stack [[(150)]] trenches [[(170)]] delimiting a plurality of diodes [[(172)]] connected to different metal pads [[(113)]] of the control circuit [[(110)]]. Currently amended
The method of claim 1, further comprising, before step a), at least one of the steps of: a step of depositing at least one first metal layer [[(116)]] over substantially the entire surface of the control circuit [[(110)]] on the side of the metal pads [[(113)]]; and a step of depositing at least one second metal layer [[(159)]] over substantially the entire surface of the second semiconductor layer [[(157)]] opposite to the first semiconductor layer [[(153)]]. Currently amended
The method of laim [[s]] 2 [[to 4]], wherein at least one of the first [[(116)]] and second [[(159)]] metal layers comprises a bonding layer made of Ti, Ni, Pt, Sn, Au, Ag, Al, Pd, W, Pb, Cu, AuSn, TiSn, NiSn, or of an alloy of all or part of these materials. Currently amended
The method of laim [[s]] 2 [[to 5]], wherein the trenches [[(170)]] formed at step b) extend all along the height of the active stack [[(150)]] and cross the first [[(116)]] and second [[(159)]] metal layers. Currently amended
The method of laim [[s]] 1 [[to 6]], wherein, during the implementation of step a), the active stack [[(150)]] is supported by a support substrate [[(201)]] located on the side of the first semiconductor layer (153) opposite to the second semiconductor layer [[(157)]], the method further comprising, between step a) and step b), a step of removing the support substrate [[(201)]]. Currently amended
The method f claim [[s]] 1 [[to 7]], further comprising, after step b), a step of depositing, on each diode [[(172)]], an electrode [[(178; 182)]] on top of and in contact with the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]]. Currently amended
The method of claim 8, wherein said electrodes [[(178)]] form a continuous metal grid arranged so that, at the level of each diode [[(172)]], in a peripheral portion of the diode [[(172)]], the surface of the first semiconductor layer [[(153)]] opposite to the second semiconductor layer [[(157)]] is in contact with the grid and, in a central portion of the diode [[(172)]], the surface of the first semiconductor la yer[[E (153)]] is not coated with the grid. Currently amended
The method of claim 8, wherein said electrodes [[(182)]] form a continuous layer made of a transparent conductive material, substantially coating the entire surface of the device. Currently amended
The method of laim [[s]] 1 [[to 10]], wherein said semiconductor diodes [[(172)]] are light-emitting diodes. Currently amended
The method of claim 11, further comprising, after step b), a step of transferring, onto the surface of the device opposite to the control circuit [[(110)]], a photoluminescent conversion stack [[(203)]] with multiple quantum wells substantially coating the entire surface of the device.
The method of laim [[s]] 1 [[to 10]], wherein said diodes are photodiodes. Currently amended
The method of laim [[s]] 1 [[to 14]], wherein the first [[(153)]] and second [[(157)]] semiconductor layers are gallium nitride layers, said diodes [[(172)]] bein g gallium nitride diodes. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with trench-delimited diodes on control integrated circuit
Materials described outside the worked examples.
N-type doped gallium nitride layer
GaN
metal layer
Related documents with shared materials, methods, properties, or citations.
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photoluminescent conversion stack with multiple quantum wells
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