Patent
Atlas literature
Patent
US 12,581,774 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the step of generation of assemblies of growth substrates with respective devices thereupon from initial growth …
FIG. 2 is a schematic illustration of the step of bonding of the growth substrates to respective first carrier substrates through the respective devices …
FIG. 3 is a schematic illustration of the step of removing the growth substrates according to an embodiment of the present disclosure.
FIG. 4 is a schematic illustration of the step of forming a first bonding material layer on the first carrier substrates, 5 providing second carrier substrate, …
FIG. 5 is a schematic illustration of the step of bonding each pair of a first carrier substrate and a second carrier 10 substrate according to an embodiment of …
FIG. 6 is a schematic illustration of the step in which each first carrier substrate is removed from a bonded structure according to an embodiment of the …
FIG. 7 is a vertical cross-sectional view of a second carrier substrate, an array of first light emitting devices thereupon, and an optional optical protection …
FIG. 8 is a vertical cross-sectional view of a backplane substrate according to an embodiment of the present disclo- sure.
FIG. 9 is a vertical cross-sectional view of a backplane that is formed by forming various dielectric material layers 25 on the backplane according to an …
FIG. 10 is a vertical cross-sectional view of the backplane after formation and patterning of an optional protective layer including an optical protection …
FIG. 11 is a vertical cross-sectional view of the backplane after formation of first conductive bonding structures on a first subset of horizontal stepped …
FIG. 12 is a vertical cross-sectional view of the backplane while bonding a first subset of the first light emitting devices on a first transfer substrate to the …
FIG. 13 is a vertical cross-sectional view of the backplane and the first transfer substrate while detaching a light emitting device among the first subset of …
FIG. 14 is a vertical cross-sectional view of the backplane after separating the first transfer substrate according to an embodiment of the present disclosure. …
FIG. 15 is a vertical cross-sectional view of the backplane after aligning a second transfer substrate with second light emitting devices thereupon according …
FIG. 16 is a vertical cross-sectional view of the backplane 55 and the second transfer substrate while detaching a light emitting device among a first subset of …
FIG. 17 is a vertical cross-sectional view of the backplane after separating the second transfer substrate according to an embodiment of the present disclosure.
FIG. 18 is a vertical cross-sectional view of the backplane and a third transfer substrate while detaching a light emitting 65 device among a first subset of …
FIG. 19 is a vertical cross-sectional view of the backplane after separating the third transfer substrate according to an embodiment of the present disclosure.
FIG. 20 is a vertical cross-sectional view of the backplane and a fourth transfer substrate while detaching a sensor device among a first subset of sensor …
FIG. 21 is a vertical cross-sectional view of the backplane after separating the fourth transfer substrate according to an embodiment of the present disclosure.
FIG. 22 is a vertical cross-sectional view of a first exemplary light emitting device assembly after formation of a transparent encapsulation dielectric layer …
FIG. 23 is a vertical cross-sectional view of an alternate embodiment of the first exemplary light emitting device assembly after formation of conductive …
FIG. 24 is an alternative embodiment of the devices on initial growth substrates according to an embodiment of the present disclosure.
FIG. 25 is a vertical cross-sectional view of another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of …
FIG. 26 is a vertical cross-sectional view of yet another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment …
FIG. 27 illustrates a processing step in an alternate embodiment of the present disclosure in which a dummy substrate is disposed above top surfaces of bonded …
FIG. 28 illustrates a processing step in an alternate embodiment of the present disclosure in which the dummy substrate presses against bonded light emitting …
FIG. 29 illustrates still another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of the present …
FIG. 30.
FIGS. 31A-31E are a schematic sequence for transfer of light emitting diodes according to the exemplary transfer pattern illustrated in
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 34A. In this embodiment, the backplane substrate 400 may have a substantially planar (i.e., not stepped) upper surface or a stepped upper surface as …
FIG. 35C. As the assembly of the first source substrate 301B and attached first light emitting diodes 10B (i.e., the complement of the first subset of the 45 first …
FIG. 36 is an exemplary structure for formation of red- light emitting diodes after formation of a dielectric material layer according to an embodiment of the …
FIG. 37 is the exemplary structure for formation of red-light emitting diodes after formation of conductive 5 bonding structures according to an embodiment of …
FIG. 38 is an isolated red-light emitting diode subpixel after singulation and removal of an underlying substrate according to an embodiment of the present …
FIG. 39 is an assembly of a backplane and an array of pixels including light emitting diodes in case each of the light emitting diodes are provided with a …
FIG. 40B is the assembly of the backplane and the array 20 of pixels after formation of a front side transparent conduc- tive oxide layer and a transparent …
FIG. 41 is a vertical cross-sectional view of a first exemplary planar material layer stack that can be formed 25 over a substrate to provide light emitting …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 43 is a vertical cross-sectional view of an exemplary device structure for forming nanowire-containing light emit- 35 ting diodes after forming a …
FIG. 44 is a vertical cross-sectional view of the exemplary device structure after forming nanowire cores according to an embodiment of the present disclosure. …
FIG. 45.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 47 is a vertical cross-sectional view of the exemplary device structure after formation of a p-type outer shell layer according to an embodiment of the …
FIG. 48 is a vertical cross-sectional view of the exemplary device structure after formation of a continuous p-type semiconductor material layer according to …
FIG. 49 is a vertical cross-sectional view of the exemplary 55 device structure after formation of a transparent conductive oxide layer and a reflector layer …
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 52 shows a current-voltage plot of the device of an unencapsulated sample 20 micron micro-LED employing the second exemplary planar material stack of
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A red-light emitting diode, comprising: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion, the light emitting region comprising: 40 a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and 45 a GaN barrier layer located on the III-nitride layer, wherein the light emitting diode comprises at least one feature selected from: (a) the light emitting diode comprises a nanowire device; or (b) the light emitting region consists of one or two quantum wells; or (c) the III-nitride layer comprises an aluminum gallium nitride layer which has a composition AlyGa(1-y)N, where y is in a range from 0.3 to 1.0; or (d) a UV emitting InGaN/GaN superlattice is located between the n-doped portion and the light emitting region.
The light emitting diode of claim 1, wherein the n-doped portion comprises a single crystalline n-doped GaN portion and the p-doped portion comprises a p-doped III-nitride layer which comprises a p-doped aluminum gallium nitride layer.
The light emitting diode of claim 1, further comprising at least one strain-modulating layer located between the single crystalline n-doped GaN layer and light emitting region.
The light emitting diode of claim 1, wherein: the light-emitting indium gallium nitride layer has a composition of InxGa(1-x)N, wherein x is in a range from 0.26 to 0.55; and the light-emitting indium gallium nitride layer has a thickness in a range from 3 nm to 7 nm.
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (a).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (b).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (c).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (d).
The light emitting diode of claim 1 wherein the light emitting diode comprises two or more of features (a) to (d).
The light emitting diode of claim 1, wherein the red-light emitting diode comprises a first light emitting diode which has a width between 1 and 100 microns located in a direct view display on a backplane, which further comprises a second green-light emitting light emitting diode a third blue-light emitting diode located on the backplane.
The light emitting diode of claim 1, wherein the light-emitting indium gallium nitride layer emits light at a peak wavelength between 610 and 650 nm under electrical bias thereacross.
A nanowire red-light emitting diode, comprising: an n-doped nanowire core portion; a p-doped portion; and a light emitting shell located on the n-doped nanowire core under the p-doped portion, the light emitting shell comprising: a light-emitting indium gallium nitride shell emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride shell located on the light-emitting indium gallium nitride shell; and a GaN barrier shell located on the III-nitride shell.
The nanowire red-light emitting diode of claim 16, wherein the III-nitride shell comprises a p-doped aluminum gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
red-light emitting diode (planar)
Materials described outside the worked examples.
indium gallium nitride (light-emitting layer)
InxGa(1-x)N
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
claimed peak emission wavelength range (red LED) | 600–750 nm | InxGa(1-x)N |
narrower claimed peak emission wavelength range (red LED, claim 15) | 610–650 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT SOURCE PROVIDED WITH SAID LIGHT EMITTING ELEMENT
Patent
Atlas literature
Patent
US 12,581,774 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the step of generation of assemblies of growth substrates with respective devices thereupon from initial growth …
FIG. 2 is a schematic illustration of the step of bonding of the growth substrates to respective first carrier substrates through the respective devices …
FIG. 3 is a schematic illustration of the step of removing the growth substrates according to an embodiment of the present disclosure.
FIG. 4 is a schematic illustration of the step of forming a first bonding material layer on the first carrier substrates, 5 providing second carrier substrate, …
FIG. 5 is a schematic illustration of the step of bonding each pair of a first carrier substrate and a second carrier 10 substrate according to an embodiment of …
FIG. 6 is a schematic illustration of the step in which each first carrier substrate is removed from a bonded structure according to an embodiment of the …
FIG. 7 is a vertical cross-sectional view of a second carrier substrate, an array of first light emitting devices thereupon, and an optional optical protection …
FIG. 8 is a vertical cross-sectional view of a backplane substrate according to an embodiment of the present disclo- sure.
FIG. 9 is a vertical cross-sectional view of a backplane that is formed by forming various dielectric material layers 25 on the backplane according to an …
FIG. 10 is a vertical cross-sectional view of the backplane after formation and patterning of an optional protective layer including an optical protection …
FIG. 11 is a vertical cross-sectional view of the backplane after formation of first conductive bonding structures on a first subset of horizontal stepped …
FIG. 12 is a vertical cross-sectional view of the backplane while bonding a first subset of the first light emitting devices on a first transfer substrate to the …
FIG. 13 is a vertical cross-sectional view of the backplane and the first transfer substrate while detaching a light emitting device among the first subset of …
FIG. 14 is a vertical cross-sectional view of the backplane after separating the first transfer substrate according to an embodiment of the present disclosure. …
FIG. 15 is a vertical cross-sectional view of the backplane after aligning a second transfer substrate with second light emitting devices thereupon according …
FIG. 16 is a vertical cross-sectional view of the backplane 55 and the second transfer substrate while detaching a light emitting device among a first subset of …
FIG. 17 is a vertical cross-sectional view of the backplane after separating the second transfer substrate according to an embodiment of the present disclosure.
FIG. 18 is a vertical cross-sectional view of the backplane and a third transfer substrate while detaching a light emitting 65 device among a first subset of …
FIG. 19 is a vertical cross-sectional view of the backplane after separating the third transfer substrate according to an embodiment of the present disclosure.
FIG. 20 is a vertical cross-sectional view of the backplane and a fourth transfer substrate while detaching a sensor device among a first subset of sensor …
FIG. 21 is a vertical cross-sectional view of the backplane after separating the fourth transfer substrate according to an embodiment of the present disclosure.
FIG. 22 is a vertical cross-sectional view of a first exemplary light emitting device assembly after formation of a transparent encapsulation dielectric layer …
FIG. 23 is a vertical cross-sectional view of an alternate embodiment of the first exemplary light emitting device assembly after formation of conductive …
FIG. 24 is an alternative embodiment of the devices on initial growth substrates according to an embodiment of the present disclosure.
FIG. 25 is a vertical cross-sectional view of another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of …
FIG. 26 is a vertical cross-sectional view of yet another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment …
FIG. 27 illustrates a processing step in an alternate embodiment of the present disclosure in which a dummy substrate is disposed above top surfaces of bonded …
FIG. 28 illustrates a processing step in an alternate embodiment of the present disclosure in which the dummy substrate presses against bonded light emitting …
FIG. 29 illustrates still another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of the present …
FIG. 30.
FIGS. 31A-31E are a schematic sequence for transfer of light emitting diodes according to the exemplary transfer pattern illustrated in
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 34A. In this embodiment, the backplane substrate 400 may have a substantially planar (i.e., not stepped) upper surface or a stepped upper surface as …
FIG. 35C. As the assembly of the first source substrate 301B and attached first light emitting diodes 10B (i.e., the complement of the first subset of the 45 first …
FIG. 36 is an exemplary structure for formation of red- light emitting diodes after formation of a dielectric material layer according to an embodiment of the …
FIG. 37 is the exemplary structure for formation of red-light emitting diodes after formation of conductive 5 bonding structures according to an embodiment of …
FIG. 38 is an isolated red-light emitting diode subpixel after singulation and removal of an underlying substrate according to an embodiment of the present …
FIG. 39 is an assembly of a backplane and an array of pixels including light emitting diodes in case each of the light emitting diodes are provided with a …
FIG. 40B is the assembly of the backplane and the array 20 of pixels after formation of a front side transparent conduc- tive oxide layer and a transparent …
FIG. 41 is a vertical cross-sectional view of a first exemplary planar material layer stack that can be formed 25 over a substrate to provide light emitting …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 43 is a vertical cross-sectional view of an exemplary device structure for forming nanowire-containing light emit- 35 ting diodes after forming a …
FIG. 44 is a vertical cross-sectional view of the exemplary device structure after forming nanowire cores according to an embodiment of the present disclosure. …
FIG. 45.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 47 is a vertical cross-sectional view of the exemplary device structure after formation of a p-type outer shell layer according to an embodiment of the …
FIG. 48 is a vertical cross-sectional view of the exemplary device structure after formation of a continuous p-type semiconductor material layer according to …
FIG. 49 is a vertical cross-sectional view of the exemplary 55 device structure after formation of a transparent conductive oxide layer and a reflector layer …
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 52 shows a current-voltage plot of the device of an unencapsulated sample 20 micron micro-LED employing the second exemplary planar material stack of
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A red-light emitting diode, comprising: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion, the light emitting region comprising: 40 a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and 45 a GaN barrier layer located on the III-nitride layer, wherein the light emitting diode comprises at least one feature selected from: (a) the light emitting diode comprises a nanowire device; or (b) the light emitting region consists of one or two quantum wells; or (c) the III-nitride layer comprises an aluminum gallium nitride layer which has a composition AlyGa(1-y)N, where y is in a range from 0.3 to 1.0; or (d) a UV emitting InGaN/GaN superlattice is located between the n-doped portion and the light emitting region.
The light emitting diode of claim 1, wherein the n-doped portion comprises a single crystalline n-doped GaN portion and the p-doped portion comprises a p-doped III-nitride layer which comprises a p-doped aluminum gallium nitride layer.
The light emitting diode of claim 1, further comprising at least one strain-modulating layer located between the single crystalline n-doped GaN layer and light emitting region.
The light emitting diode of claim 1, wherein: the light-emitting indium gallium nitride layer has a composition of InxGa(1-x)N, wherein x is in a range from 0.26 to 0.55; and the light-emitting indium gallium nitride layer has a thickness in a range from 3 nm to 7 nm.
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (a).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (b).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (c).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (d).
The light emitting diode of claim 1 wherein the light emitting diode comprises two or more of features (a) to (d).
The light emitting diode of claim 1, wherein the red-light emitting diode comprises a first light emitting diode which has a width between 1 and 100 microns located in a direct view display on a backplane, which further comprises a second green-light emitting light emitting diode a third blue-light emitting diode located on the backplane.
The light emitting diode of claim 1, wherein the light-emitting indium gallium nitride layer emits light at a peak wavelength between 610 and 650 nm under electrical bias thereacross.
A nanowire red-light emitting diode, comprising: an n-doped nanowire core portion; a p-doped portion; and a light emitting shell located on the n-doped nanowire core under the p-doped portion, the light emitting shell comprising: a light-emitting indium gallium nitride shell emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride shell located on the light-emitting indium gallium nitride shell; and a GaN barrier shell located on the III-nitride shell.
The nanowire red-light emitting diode of claim 16, wherein the III-nitride shell comprises a p-doped aluminum gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
red-light emitting diode (planar)
Materials described outside the worked examples.
indium gallium nitride (light-emitting layer)
InxGa(1-x)N
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
claimed peak emission wavelength range (red LED) | 600–750 nm | InxGa(1-x)N |
narrower claimed peak emission wavelength range (red LED, claim 15) | 610–650 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT SOURCE PROVIDED WITH SAID LIGHT EMITTING ELEMENT
Patent
Atlas literature
Patent
US 12,581,774 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the step of generation of assemblies of growth substrates with respective devices thereupon from initial growth …
FIG. 2 is a schematic illustration of the step of bonding of the growth substrates to respective first carrier substrates through the respective devices …
FIG. 3 is a schematic illustration of the step of removing the growth substrates according to an embodiment of the present disclosure.
FIG. 4 is a schematic illustration of the step of forming a first bonding material layer on the first carrier substrates, 5 providing second carrier substrate, …
FIG. 5 is a schematic illustration of the step of bonding each pair of a first carrier substrate and a second carrier 10 substrate according to an embodiment of …
FIG. 6 is a schematic illustration of the step in which each first carrier substrate is removed from a bonded structure according to an embodiment of the …
FIG. 7 is a vertical cross-sectional view of a second carrier substrate, an array of first light emitting devices thereupon, and an optional optical protection …
FIG. 8 is a vertical cross-sectional view of a backplane substrate according to an embodiment of the present disclo- sure.
FIG. 9 is a vertical cross-sectional view of a backplane that is formed by forming various dielectric material layers 25 on the backplane according to an …
FIG. 10 is a vertical cross-sectional view of the backplane after formation and patterning of an optional protective layer including an optical protection …
FIG. 11 is a vertical cross-sectional view of the backplane after formation of first conductive bonding structures on a first subset of horizontal stepped …
FIG. 12 is a vertical cross-sectional view of the backplane while bonding a first subset of the first light emitting devices on a first transfer substrate to the …
FIG. 13 is a vertical cross-sectional view of the backplane and the first transfer substrate while detaching a light emitting device among the first subset of …
FIG. 14 is a vertical cross-sectional view of the backplane after separating the first transfer substrate according to an embodiment of the present disclosure. …
FIG. 15 is a vertical cross-sectional view of the backplane after aligning a second transfer substrate with second light emitting devices thereupon according …
FIG. 16 is a vertical cross-sectional view of the backplane 55 and the second transfer substrate while detaching a light emitting device among a first subset of …
FIG. 17 is a vertical cross-sectional view of the backplane after separating the second transfer substrate according to an embodiment of the present disclosure.
FIG. 18 is a vertical cross-sectional view of the backplane and a third transfer substrate while detaching a light emitting 65 device among a first subset of …
FIG. 19 is a vertical cross-sectional view of the backplane after separating the third transfer substrate according to an embodiment of the present disclosure.
FIG. 20 is a vertical cross-sectional view of the backplane and a fourth transfer substrate while detaching a sensor device among a first subset of sensor …
FIG. 21 is a vertical cross-sectional view of the backplane after separating the fourth transfer substrate according to an embodiment of the present disclosure.
FIG. 22 is a vertical cross-sectional view of a first exemplary light emitting device assembly after formation of a transparent encapsulation dielectric layer …
FIG. 23 is a vertical cross-sectional view of an alternate embodiment of the first exemplary light emitting device assembly after formation of conductive …
FIG. 24 is an alternative embodiment of the devices on initial growth substrates according to an embodiment of the present disclosure.
FIG. 25 is a vertical cross-sectional view of another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of …
FIG. 26 is a vertical cross-sectional view of yet another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment …
FIG. 27 illustrates a processing step in an alternate embodiment of the present disclosure in which a dummy substrate is disposed above top surfaces of bonded …
FIG. 28 illustrates a processing step in an alternate embodiment of the present disclosure in which the dummy substrate presses against bonded light emitting …
FIG. 29 illustrates still another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of the present …
FIG. 30.
FIGS. 31A-31E are a schematic sequence for transfer of light emitting diodes according to the exemplary transfer pattern illustrated in
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 34A. In this embodiment, the backplane substrate 400 may have a substantially planar (i.e., not stepped) upper surface or a stepped upper surface as …
FIG. 35C. As the assembly of the first source substrate 301B and attached first light emitting diodes 10B (i.e., the complement of the first subset of the 45 first …
FIG. 36 is an exemplary structure for formation of red- light emitting diodes after formation of a dielectric material layer according to an embodiment of the …
FIG. 37 is the exemplary structure for formation of red-light emitting diodes after formation of conductive 5 bonding structures according to an embodiment of …
FIG. 38 is an isolated red-light emitting diode subpixel after singulation and removal of an underlying substrate according to an embodiment of the present …
FIG. 39 is an assembly of a backplane and an array of pixels including light emitting diodes in case each of the light emitting diodes are provided with a …
FIG. 40B is the assembly of the backplane and the array 20 of pixels after formation of a front side transparent conduc- tive oxide layer and a transparent …
FIG. 41 is a vertical cross-sectional view of a first exemplary planar material layer stack that can be formed 25 over a substrate to provide light emitting …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 43 is a vertical cross-sectional view of an exemplary device structure for forming nanowire-containing light emit- 35 ting diodes after forming a …
FIG. 44 is a vertical cross-sectional view of the exemplary device structure after forming nanowire cores according to an embodiment of the present disclosure. …
FIG. 45.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 47 is a vertical cross-sectional view of the exemplary device structure after formation of a p-type outer shell layer according to an embodiment of the …
FIG. 48 is a vertical cross-sectional view of the exemplary device structure after formation of a continuous p-type semiconductor material layer according to …
FIG. 49 is a vertical cross-sectional view of the exemplary 55 device structure after formation of a transparent conductive oxide layer and a reflector layer …
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 52 shows a current-voltage plot of the device of an unencapsulated sample 20 micron micro-LED employing the second exemplary planar material stack of
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A red-light emitting diode, comprising: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion, the light emitting region comprising: 40 a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and 45 a GaN barrier layer located on the III-nitride layer, wherein the light emitting diode comprises at least one feature selected from: (a) the light emitting diode comprises a nanowire device; or (b) the light emitting region consists of one or two quantum wells; or (c) the III-nitride layer comprises an aluminum gallium nitride layer which has a composition AlyGa(1-y)N, where y is in a range from 0.3 to 1.0; or (d) a UV emitting InGaN/GaN superlattice is located between the n-doped portion and the light emitting region.
The light emitting diode of claim 1, wherein the n-doped portion comprises a single crystalline n-doped GaN portion and the p-doped portion comprises a p-doped III-nitride layer which comprises a p-doped aluminum gallium nitride layer.
The light emitting diode of claim 1, further comprising at least one strain-modulating layer located between the single crystalline n-doped GaN layer and light emitting region.
The light emitting diode of claim 1, wherein: the light-emitting indium gallium nitride layer has a composition of InxGa(1-x)N, wherein x is in a range from 0.26 to 0.55; and the light-emitting indium gallium nitride layer has a thickness in a range from 3 nm to 7 nm.
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (a).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (b).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (c).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (d).
The light emitting diode of claim 1 wherein the light emitting diode comprises two or more of features (a) to (d).
The light emitting diode of claim 1, wherein the red-light emitting diode comprises a first light emitting diode which has a width between 1 and 100 microns located in a direct view display on a backplane, which further comprises a second green-light emitting light emitting diode a third blue-light emitting diode located on the backplane.
The light emitting diode of claim 1, wherein the light-emitting indium gallium nitride layer emits light at a peak wavelength between 610 and 650 nm under electrical bias thereacross.
A nanowire red-light emitting diode, comprising: an n-doped nanowire core portion; a p-doped portion; and a light emitting shell located on the n-doped nanowire core under the p-doped portion, the light emitting shell comprising: a light-emitting indium gallium nitride shell emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride shell located on the light-emitting indium gallium nitride shell; and a GaN barrier shell located on the III-nitride shell.
The nanowire red-light emitting diode of claim 16, wherein the III-nitride shell comprises a p-doped aluminum gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
red-light emitting diode (planar)
Materials described outside the worked examples.
indium gallium nitride (light-emitting layer)
InxGa(1-x)N
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
claimed peak emission wavelength range (red LED) | 600–750 nm | InxGa(1-x)N |
narrower claimed peak emission wavelength range (red LED, claim 15) | 610–650 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT SOURCE PROVIDED WITH SAID LIGHT EMITTING ELEMENT
Patent
Atlas literature
Patent
US 12,581,774 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the step of generation of assemblies of growth substrates with respective devices thereupon from initial growth …
FIG. 2 is a schematic illustration of the step of bonding of the growth substrates to respective first carrier substrates through the respective devices …
FIG. 3 is a schematic illustration of the step of removing the growth substrates according to an embodiment of the present disclosure.
FIG. 4 is a schematic illustration of the step of forming a first bonding material layer on the first carrier substrates, 5 providing second carrier substrate, …
FIG. 5 is a schematic illustration of the step of bonding each pair of a first carrier substrate and a second carrier 10 substrate according to an embodiment of …
FIG. 6 is a schematic illustration of the step in which each first carrier substrate is removed from a bonded structure according to an embodiment of the …
FIG. 7 is a vertical cross-sectional view of a second carrier substrate, an array of first light emitting devices thereupon, and an optional optical protection …
FIG. 8 is a vertical cross-sectional view of a backplane substrate according to an embodiment of the present disclo- sure.
FIG. 9 is a vertical cross-sectional view of a backplane that is formed by forming various dielectric material layers 25 on the backplane according to an …
FIG. 10 is a vertical cross-sectional view of the backplane after formation and patterning of an optional protective layer including an optical protection …
FIG. 11 is a vertical cross-sectional view of the backplane after formation of first conductive bonding structures on a first subset of horizontal stepped …
FIG. 12 is a vertical cross-sectional view of the backplane while bonding a first subset of the first light emitting devices on a first transfer substrate to the …
FIG. 13 is a vertical cross-sectional view of the backplane and the first transfer substrate while detaching a light emitting device among the first subset of …
FIG. 14 is a vertical cross-sectional view of the backplane after separating the first transfer substrate according to an embodiment of the present disclosure. …
FIG. 15 is a vertical cross-sectional view of the backplane after aligning a second transfer substrate with second light emitting devices thereupon according …
FIG. 16 is a vertical cross-sectional view of the backplane 55 and the second transfer substrate while detaching a light emitting device among a first subset of …
FIG. 17 is a vertical cross-sectional view of the backplane after separating the second transfer substrate according to an embodiment of the present disclosure.
FIG. 18 is a vertical cross-sectional view of the backplane and a third transfer substrate while detaching a light emitting 65 device among a first subset of …
FIG. 19 is a vertical cross-sectional view of the backplane after separating the third transfer substrate according to an embodiment of the present disclosure.
FIG. 20 is a vertical cross-sectional view of the backplane and a fourth transfer substrate while detaching a sensor device among a first subset of sensor …
FIG. 21 is a vertical cross-sectional view of the backplane after separating the fourth transfer substrate according to an embodiment of the present disclosure.
FIG. 22 is a vertical cross-sectional view of a first exemplary light emitting device assembly after formation of a transparent encapsulation dielectric layer …
FIG. 23 is a vertical cross-sectional view of an alternate embodiment of the first exemplary light emitting device assembly after formation of conductive …
FIG. 24 is an alternative embodiment of the devices on initial growth substrates according to an embodiment of the present disclosure.
FIG. 25 is a vertical cross-sectional view of another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of …
FIG. 26 is a vertical cross-sectional view of yet another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment …
FIG. 27 illustrates a processing step in an alternate embodiment of the present disclosure in which a dummy substrate is disposed above top surfaces of bonded …
FIG. 28 illustrates a processing step in an alternate embodiment of the present disclosure in which the dummy substrate presses against bonded light emitting …
FIG. 29 illustrates still another alternate embodiment of the first exemplary light emitting device assembly according to an embodiment of the present …
FIG. 30.
FIGS. 31A-31E are a schematic sequence for transfer of light emitting diodes according to the exemplary transfer pattern illustrated in
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 34A. In this embodiment, the backplane substrate 400 may have a substantially planar (i.e., not stepped) upper surface or a stepped upper surface as …
FIG. 35C. As the assembly of the first source substrate 301B and attached first light emitting diodes 10B (i.e., the complement of the first subset of the 45 first …
FIG. 36 is an exemplary structure for formation of red- light emitting diodes after formation of a dielectric material layer according to an embodiment of the …
FIG. 37 is the exemplary structure for formation of red-light emitting diodes after formation of conductive 5 bonding structures according to an embodiment of …
FIG. 38 is an isolated red-light emitting diode subpixel after singulation and removal of an underlying substrate according to an embodiment of the present …
FIG. 39 is an assembly of a backplane and an array of pixels including light emitting diodes in case each of the light emitting diodes are provided with a …
FIG. 40B is the assembly of the backplane and the array 20 of pixels after formation of a front side transparent conduc- tive oxide layer and a transparent …
FIG. 41 is a vertical cross-sectional view of a first exemplary planar material layer stack that can be formed 25 over a substrate to provide light emitting …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 43 is a vertical cross-sectional view of an exemplary device structure for forming nanowire-containing light emit- 35 ting diodes after forming a …
FIG. 44 is a vertical cross-sectional view of the exemplary device structure after forming nanowire cores according to an embodiment of the present disclosure. …
FIG. 45.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 47 is a vertical cross-sectional view of the exemplary device structure after formation of a p-type outer shell layer according to an embodiment of the …
FIG. 48 is a vertical cross-sectional view of the exemplary device structure after formation of a continuous p-type semiconductor material layer according to …
FIG. 49 is a vertical cross-sectional view of the exemplary 55 device structure after formation of a transparent conductive oxide layer and a reflector layer …
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 52 shows a current-voltage plot of the device of an unencapsulated sample 20 micron micro-LED employing the second exemplary planar material stack of
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A red-light emitting diode, comprising: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion, the light emitting region comprising: 40 a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and 45 a GaN barrier layer located on the III-nitride layer, wherein the light emitting diode comprises at least one feature selected from: (a) the light emitting diode comprises a nanowire device; or (b) the light emitting region consists of one or two quantum wells; or (c) the III-nitride layer comprises an aluminum gallium nitride layer which has a composition AlyGa(1-y)N, where y is in a range from 0.3 to 1.0; or (d) a UV emitting InGaN/GaN superlattice is located between the n-doped portion and the light emitting region.
The light emitting diode of claim 1, wherein the n-doped portion comprises a single crystalline n-doped GaN portion and the p-doped portion comprises a p-doped III-nitride layer which comprises a p-doped aluminum gallium nitride layer.
The light emitting diode of claim 1, further comprising at least one strain-modulating layer located between the single crystalline n-doped GaN layer and light emitting region.
The light emitting diode of claim 1, wherein: the light-emitting indium gallium nitride layer has a composition of InxGa(1-x)N, wherein x is in a range from 0.26 to 0.55; and the light-emitting indium gallium nitride layer has a thickness in a range from 3 nm to 7 nm.
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (a).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (b).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (c).
The light emitting diode of claim 1 wherein the light emitting diode comprises feature (d).
The light emitting diode of claim 1 wherein the light emitting diode comprises two or more of features (a) to (d).
The light emitting diode of claim 1, wherein the red-light emitting diode comprises a first light emitting diode which has a width between 1 and 100 microns located in a direct view display on a backplane, which further comprises a second green-light emitting light emitting diode a third blue-light emitting diode located on the backplane.
The light emitting diode of claim 1, wherein the light-emitting indium gallium nitride layer emits light at a peak wavelength between 610 and 650 nm under electrical bias thereacross.
A nanowire red-light emitting diode, comprising: an n-doped nanowire core portion; a p-doped portion; and a light emitting shell located on the n-doped nanowire core under the p-doped portion, the light emitting shell comprising: a light-emitting indium gallium nitride shell emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride shell located on the light-emitting indium gallium nitride shell; and a GaN barrier shell located on the III-nitride shell.
The nanowire red-light emitting diode of claim 16, wherein the III-nitride shell comprises a p-doped aluminum gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
red-light emitting diode (planar)
Materials described outside the worked examples.
indium gallium nitride (light-emitting layer)
InxGa(1-x)N
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 32N. In some embodiments, the first bonding pads 420 and the second bonding pads 420 can have a same thickness, and are located on stepped surfaces. Bottom …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
claimed peak emission wavelength range (red LED) | 600–750 nm | InxGa(1-x)N |
narrower claimed peak emission wavelength range (red LED, claim 15) | 610–650 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT SOURCE PROVIDED WITH SAID LIGHT EMITTING ELEMENT
direct view display with red, green, and blue LEDs on backplane
No layer stack recorded.
nanowire red-light emitting diode
aluminum gallium nitride (III-nitride layer)
AlyGa(1-y)N
p-doped aluminum gallium nitride
AlGaN
InGaN/GaN superlattice (UV emitting)
InGaN/GaN
III-nitride shell
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Thickness | 0.1–0.75 µm | — |
Thickness | 400–495 nm | — |
Thickness | 600–640 nm | — |
Thickness | 10–400 nm | — |
Thickness | 400–800 nm | — |
Thickness | 800–1000000 nm | — |
Thickness | 50–5000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 200–2000 nm | — |
Thickness | 0–3 µm | — |
Thickness | 2–65 µm | — |
Thickness | 50–3000 nm | — |
Thickness | 0.3–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 15–100 µm | — |
Thickness | 40–60 µm | — |
Thickness | 20–60 µm | — |
Thickness | 10–80 µm | — |
Thickness | 15–50 µm | — |
Thickness | 0.8–20 µm | — |
Thickness | 1.5–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–10 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 20–1000 nm | — |
Thickness | 620–750 nm | — |
Thickness | 300–3000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 200–1000 nm | — |
Thickness | 100–4000 nm | — |
Thickness | 15–60 µm | — |
Thickness | 495–570 nm | — |
Thickness | 610–680 nm | — |
Thickness | 0.7–1.5 nm | — |
Thickness | 3–6 nm | — |
Thickness | 2–3 nm | — |
Thickness | 15–20 nm | — |
Thickness | 20–150 nm | — |
Thickness | 30–50 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 10–20 nm | — |
Thickness | 90–200 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 150–5000 nm | — |
Thickness | 3–5 nm | — |
Thickness | 4–6 nm | — |
Thickness | 2–4 nm | — |
Thickness | 2.5–8 nm | — |
Thickness | 6–10 nm | — |
Thickness | 3–7 nm | — |
Thickness | 0.2–3 nm | — |
Thickness | 0.5–1.5 nm | — |
Thickness | 5–20 nm | — |
Thickness | 10–30 nm | — |
Thickness | 400–600 nm | — |
Thickness | 1–100 µm | — |
Thickness | 1–2 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 450–495 nm | — |
Thickness | 6–60 µm | — |
Duration | 5–10 second | — |
Thickness | 615–630 nm | — |
Thickness | 45–50 nm | — |
Thickness | ≤ 1 µm | — |
Temperature | ≤ 450 °C | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 620 nm | — |
Cited non-patent literature · 2
direct view display with red, green, and blue LEDs on backplane
No layer stack recorded.
nanowire red-light emitting diode
aluminum gallium nitride (III-nitride layer)
AlyGa(1-y)N
p-doped aluminum gallium nitride
AlGaN
InGaN/GaN superlattice (UV emitting)
InGaN/GaN
III-nitride shell
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Thickness | 0.1–0.75 µm | — |
Thickness | 400–495 nm | — |
Thickness | 600–640 nm | — |
Thickness | 10–400 nm | — |
Thickness | 400–800 nm | — |
Thickness | 800–1000000 nm | — |
Thickness | 50–5000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 200–2000 nm | — |
Thickness | 0–3 µm | — |
Thickness | 2–65 µm | — |
Thickness | 50–3000 nm | — |
Thickness | 0.3–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 15–100 µm | — |
Thickness | 40–60 µm | — |
Thickness | 20–60 µm | — |
Thickness | 10–80 µm | — |
Thickness | 15–50 µm | — |
Thickness | 0.8–20 µm | — |
Thickness | 1.5–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–10 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 20–1000 nm | — |
Thickness | 620–750 nm | — |
Thickness | 300–3000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 200–1000 nm | — |
Thickness | 100–4000 nm | — |
Thickness | 15–60 µm | — |
Thickness | 495–570 nm | — |
Thickness | 610–680 nm | — |
Thickness | 0.7–1.5 nm | — |
Thickness | 3–6 nm | — |
Thickness | 2–3 nm | — |
Thickness | 15–20 nm | — |
Thickness | 20–150 nm | — |
Thickness | 30–50 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 10–20 nm | — |
Thickness | 90–200 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 150–5000 nm | — |
Thickness | 3–5 nm | — |
Thickness | 4–6 nm | — |
Thickness | 2–4 nm | — |
Thickness | 2.5–8 nm | — |
Thickness | 6–10 nm | — |
Thickness | 3–7 nm | — |
Thickness | 0.2–3 nm | — |
Thickness | 0.5–1.5 nm | — |
Thickness | 5–20 nm | — |
Thickness | 10–30 nm | — |
Thickness | 400–600 nm | — |
Thickness | 1–100 µm | — |
Thickness | 1–2 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 450–495 nm | — |
Thickness | 6–60 µm | — |
Duration | 5–10 second | — |
Thickness | 615–630 nm | — |
Thickness | 45–50 nm | — |
Thickness | ≤ 1 µm | — |
Temperature | ≤ 450 °C | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 620 nm | — |
Cited non-patent literature · 2
direct view display with red, green, and blue LEDs on backplane
No layer stack recorded.
nanowire red-light emitting diode
aluminum gallium nitride (III-nitride layer)
AlyGa(1-y)N
p-doped aluminum gallium nitride
AlGaN
InGaN/GaN superlattice (UV emitting)
InGaN/GaN
III-nitride shell
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Thickness | 0.1–0.75 µm | — |
Thickness | 400–495 nm | — |
Thickness | 600–640 nm | — |
Thickness | 10–400 nm | — |
Thickness | 400–800 nm | — |
Thickness | 800–1000000 nm | — |
Thickness | 50–5000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 200–2000 nm | — |
Thickness | 0–3 µm | — |
Thickness | 2–65 µm | — |
Thickness | 50–3000 nm | — |
Thickness | 0.3–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 15–100 µm | — |
Thickness | 40–60 µm | — |
Thickness | 20–60 µm | — |
Thickness | 10–80 µm | — |
Thickness | 15–50 µm | — |
Thickness | 0.8–20 µm | — |
Thickness | 1.5–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–10 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 20–1000 nm | — |
Thickness | 620–750 nm | — |
Thickness | 300–3000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 200–1000 nm | — |
Thickness | 100–4000 nm | — |
Thickness | 15–60 µm | — |
Thickness | 495–570 nm | — |
Thickness | 610–680 nm | — |
Thickness | 0.7–1.5 nm | — |
Thickness | 3–6 nm | — |
Thickness | 2–3 nm | — |
Thickness | 15–20 nm | — |
Thickness | 20–150 nm | — |
Thickness | 30–50 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 10–20 nm | — |
Thickness | 90–200 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 150–5000 nm | — |
Thickness | 3–5 nm | — |
Thickness | 4–6 nm | — |
Thickness | 2–4 nm | — |
Thickness | 2.5–8 nm | — |
Thickness | 6–10 nm | — |
Thickness | 3–7 nm | — |
Thickness | 0.2–3 nm | — |
Thickness | 0.5–1.5 nm | — |
Thickness | 5–20 nm | — |
Thickness | 10–30 nm | — |
Thickness | 400–600 nm | — |
Thickness | 1–100 µm | — |
Thickness | 1–2 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 450–495 nm | — |
Thickness | 6–60 µm | — |
Duration | 5–10 second | — |
Thickness | 615–630 nm | — |
Thickness | 45–50 nm | — |
Thickness | ≤ 1 µm | — |
Temperature | ≤ 450 °C | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 620 nm | — |
Cited non-patent literature · 2
direct view display with red, green, and blue LEDs on backplane
No layer stack recorded.
nanowire red-light emitting diode
aluminum gallium nitride (III-nitride layer)
AlyGa(1-y)N
p-doped aluminum gallium nitride
AlGaN
InGaN/GaN superlattice (UV emitting)
InGaN/GaN
III-nitride shell
FIG. 33A. In one embodiment, the conductive bonding structures (431, 432, 433) can be formed on the devices to be trans- ferred to the backplane 401. For …
FIG. 42 at various operating current density conditions according to an embodiment of the present disclosure.
FIG. 46B 45 is a transmission electron microscope (TEM) micrograph of a magnified region R of the exemplary structure of
FIG. 50 is graph showing external quantum efficiency of sample light emitting devices employing the first exemplary 60 planar material layer stack of
FIG. 51 is a graph of emission intensity versus wave- length for the second exemplary planar material stack of 65
FIG. 53 is a graph showing external quantum efficiency of sample light emitting devices employing the exemplary device structure of
Thickness | 0.1–0.75 µm | — |
Thickness | 400–495 nm | — |
Thickness | 600–640 nm | — |
Thickness | 10–400 nm | — |
Thickness | 400–800 nm | — |
Thickness | 800–1000000 nm | — |
Thickness | 50–5000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 200–2000 nm | — |
Thickness | 0–3 µm | — |
Thickness | 2–65 µm | — |
Thickness | 50–3000 nm | — |
Thickness | 0.3–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 15–100 µm | — |
Thickness | 40–60 µm | — |
Thickness | 20–60 µm | — |
Thickness | 10–80 µm | — |
Thickness | 15–50 µm | — |
Thickness | 0.8–20 µm | — |
Thickness | 1.5–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–10 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 20–1000 nm | — |
Thickness | 620–750 nm | — |
Thickness | 300–3000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 200–1000 nm | — |
Thickness | 100–4000 nm | — |
Thickness | 15–60 µm | — |
Thickness | 495–570 nm | — |
Thickness | 610–680 nm | — |
Thickness | 0.7–1.5 nm | — |
Thickness | 3–6 nm | — |
Thickness | 2–3 nm | — |
Thickness | 15–20 nm | — |
Thickness | 20–150 nm | — |
Thickness | 30–50 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–1 nm | — |
Thickness | 10–20 nm | — |
Thickness | 90–200 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | 150–5000 nm | — |
Thickness | 3–5 nm | — |
Thickness | 4–6 nm | — |
Thickness | 2–4 nm | — |
Thickness | 2.5–8 nm | — |
Thickness | 6–10 nm | — |
Thickness | 3–7 nm | — |
Thickness | 0.2–3 nm | — |
Thickness | 0.5–1.5 nm | — |
Thickness | 5–20 nm | — |
Thickness | 10–30 nm | — |
Thickness | 400–600 nm | — |
Thickness | 1–100 µm | — |
Thickness | 1–2 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 450–495 nm | — |
Thickness | 6–60 µm | — |
Duration | 5–10 second | — |
Thickness | 615–630 nm | — |
Thickness | 45–50 nm | — |
Thickness | ≤ 1 µm | — |
Temperature | ≤ 450 °C | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 620 nm | — |
Cited non-patent literature · 2
