Patent
US 11,180,373NANOCRYSTALLINE GRAPHENE AND METHOD OF FORMING NANOCRYSTALLINE GRAPHENE
Hyunjae SONG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,180,373Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C are views illustrating a method of forming nanocrystalline graphene, according to an example embodiment; [0047]
FIGS. 2A and 2B are graphs respectively illustrating D-parameter spectrums of nanocrystalline graphene and an amorphous carbon layer; [0048]
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIGS. 5A to 5 C are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0054]
FIGS. 6A to 6 D are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0055]
FIGS. 7A to 7 C are cross-sectional views of electronic devices according to other example embodiments; [0056]
FIGS. 8A to 8 C are cross-sectional views of pellicles according to some example embodiments; [0057]
FIGS. 9A to 9H are cross-sectional views of device structures including a barrier layer according to some example embodiments; and [0058]
FIG. 10 is a cross-sectional view of a device for forming nanocrystalline graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%, and the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 1, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 1, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
The graphene product of claim 1, wherein the ratio of carbon having the sp2 bonding structure to total carbon in the nanocrystalline graphene is within a range of 50% to 99%. New
Canceled
Canceled
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at% to about at%, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 6, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 6, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: growing the nanocrystalline graphene directly on a substrate using a plasma of a reaction gas at a temperature of about 700 ° C or less, the reaction gas including a carbon source and an inert gas. Withdrawn
The method of claim 10, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 10, wherein the reaction gas does not include hydrogen gas. Withdrawn
The method of claim 10, wherein the reaction gas further includes hydrogen gas. Withdrawn
The method of claim 10, wherein the carbon source includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Withdrawn
The method of claim 10, wherein the inert gas includes at least one of argon gas, neon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process temperature of about 180 ° C to about 700 C. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process pressure of about 0.001 Torr to about 10 Torr. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene includes generating the plasma of the reaction gas by at least one of a radio frequency (R F) plasma generating device or a microwave (MW) plasma generating device. Withdrawn
The method of claim 10, wherein a power for generating the plasma of the reaction gas ranges from about 10 W to about 4000 W. Withdrawn
The method of claim 10, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, or an insulative material. Withdrawn
The method of claim 10, further comprising: pretreating a surface of the substrate using a reducing gas before the growing of the nanocrystalline graphene. Withdrawn
The method of claim 10, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the substrate, wherein the growing the nanocrystalline graphene directly on the substrate forms a first nanocrystalline graphene directly on the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A device comprising: a plasma enhanced chemical vapor deposition machine configured to perform the method of claim 10. Original
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: injecting a reaction gas into a reaction chamber, the reaction gas including a carbon source and an inert gas into a reaction chamber; generating a plasma of the reaction gas in the reaction chamber; and growing the nanocrystalline graphene directly on a surface of a substrate using the plasma of the reaction gas at a temperature of about 700 ° C or less. Withdrawn
The method of claim 39, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 39, further comprising: pretreating the surface of the substrate using a reducing gas. Withdrawn
The method of claim 39, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the surface of the substrate, wherein the growing the nanocrystalline graphene directly on the surface of the substrate forms a first nanocrystalline graphene directly on the surface of the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm, the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Original
The graphene product of claim 46, further comprising: a substrate, wherein the nanocrystalline graphene is directly on a surface of the substrate. Original
The graphene product of claim 46, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma enhanced chemical vapor deposition machine
No layer stack recorded.
Materials described outside the worked examples.
nanocrystalline graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of sp2-bonded carbon to total carbon | 50–99 % | nanocrystalline graphene |
hydrogen content in nanocrystalline graphene | 1–20 at% |
Table 1
In Table 1, "sp 2 b o nding carbon ratio" refers to the ratio of carbo
p. 9
Table 2
Table 2 below shows results of an XPS experiment in which a surface
p. 10
Table 3
Table 3 below shows results of an XPS experiment that were obtain w
p. 10
Table 4
Table 4 below sh ows results of an XPS experiment that were obtain
p. 10
Related documents with shared materials, methods, properties, or citations.
METHODS AND APPLICATIONS FOR CONDUCTIVE GRAPHENE INKS
STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE
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Atlas literature
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US 11,180,373Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C are views illustrating a method of forming nanocrystalline graphene, according to an example embodiment; [0047]
FIGS. 2A and 2B are graphs respectively illustrating D-parameter spectrums of nanocrystalline graphene and an amorphous carbon layer; [0048]
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIGS. 5A to 5 C are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0054]
FIGS. 6A to 6 D are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0055]
FIGS. 7A to 7 C are cross-sectional views of electronic devices according to other example embodiments; [0056]
FIGS. 8A to 8 C are cross-sectional views of pellicles according to some example embodiments; [0057]
FIGS. 9A to 9H are cross-sectional views of device structures including a barrier layer according to some example embodiments; and [0058]
FIG. 10 is a cross-sectional view of a device for forming nanocrystalline graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%, and the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 1, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 1, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
The graphene product of claim 1, wherein the ratio of carbon having the sp2 bonding structure to total carbon in the nanocrystalline graphene is within a range of 50% to 99%. New
Canceled
Canceled
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at% to about at%, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 6, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 6, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: growing the nanocrystalline graphene directly on a substrate using a plasma of a reaction gas at a temperature of about 700 ° C or less, the reaction gas including a carbon source and an inert gas. Withdrawn
The method of claim 10, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 10, wherein the reaction gas does not include hydrogen gas. Withdrawn
The method of claim 10, wherein the reaction gas further includes hydrogen gas. Withdrawn
The method of claim 10, wherein the carbon source includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Withdrawn
The method of claim 10, wherein the inert gas includes at least one of argon gas, neon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process temperature of about 180 ° C to about 700 C. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process pressure of about 0.001 Torr to about 10 Torr. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene includes generating the plasma of the reaction gas by at least one of a radio frequency (R F) plasma generating device or a microwave (MW) plasma generating device. Withdrawn
The method of claim 10, wherein a power for generating the plasma of the reaction gas ranges from about 10 W to about 4000 W. Withdrawn
The method of claim 10, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, or an insulative material. Withdrawn
The method of claim 10, further comprising: pretreating a surface of the substrate using a reducing gas before the growing of the nanocrystalline graphene. Withdrawn
The method of claim 10, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the substrate, wherein the growing the nanocrystalline graphene directly on the substrate forms a first nanocrystalline graphene directly on the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A device comprising: a plasma enhanced chemical vapor deposition machine configured to perform the method of claim 10. Original
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: injecting a reaction gas into a reaction chamber, the reaction gas including a carbon source and an inert gas into a reaction chamber; generating a plasma of the reaction gas in the reaction chamber; and growing the nanocrystalline graphene directly on a surface of a substrate using the plasma of the reaction gas at a temperature of about 700 ° C or less. Withdrawn
The method of claim 39, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 39, further comprising: pretreating the surface of the substrate using a reducing gas. Withdrawn
The method of claim 39, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the surface of the substrate, wherein the growing the nanocrystalline graphene directly on the surface of the substrate forms a first nanocrystalline graphene directly on the surface of the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm, the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Original
The graphene product of claim 46, further comprising: a substrate, wherein the nanocrystalline graphene is directly on a surface of the substrate. Original
The graphene product of claim 46, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma enhanced chemical vapor deposition machine
No layer stack recorded.
Materials described outside the worked examples.
nanocrystalline graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of sp2-bonded carbon to total carbon | 50–99 % | nanocrystalline graphene |
hydrogen content in nanocrystalline graphene | 1–20 at% |
Table 1
In Table 1, "sp 2 b o nding carbon ratio" refers to the ratio of carbo
p. 9
Table 2
Table 2 below shows results of an XPS experiment in which a surface
p. 10
Table 3
Table 3 below shows results of an XPS experiment that were obtain w
p. 10
Table 4
Table 4 below sh ows results of an XPS experiment that were obtain
p. 10
Related documents with shared materials, methods, properties, or citations.
METHODS AND APPLICATIONS FOR CONDUCTIVE GRAPHENE INKS
STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE
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Atlas literature
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US 11,180,373Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C are views illustrating a method of forming nanocrystalline graphene, according to an example embodiment; [0047]
FIGS. 2A and 2B are graphs respectively illustrating D-parameter spectrums of nanocrystalline graphene and an amorphous carbon layer; [0048]
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIGS. 5A to 5 C are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0054]
FIGS. 6A to 6 D are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0055]
FIGS. 7A to 7 C are cross-sectional views of electronic devices according to other example embodiments; [0056]
FIGS. 8A to 8 C are cross-sectional views of pellicles according to some example embodiments; [0057]
FIGS. 9A to 9H are cross-sectional views of device structures including a barrier layer according to some example embodiments; and [0058]
FIG. 10 is a cross-sectional view of a device for forming nanocrystalline graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%, and the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 1, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 1, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
The graphene product of claim 1, wherein the ratio of carbon having the sp2 bonding structure to total carbon in the nanocrystalline graphene is within a range of 50% to 99%. New
Canceled
Canceled
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at% to about at%, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 6, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 6, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: growing the nanocrystalline graphene directly on a substrate using a plasma of a reaction gas at a temperature of about 700 ° C or less, the reaction gas including a carbon source and an inert gas. Withdrawn
The method of claim 10, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 10, wherein the reaction gas does not include hydrogen gas. Withdrawn
The method of claim 10, wherein the reaction gas further includes hydrogen gas. Withdrawn
The method of claim 10, wherein the carbon source includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Withdrawn
The method of claim 10, wherein the inert gas includes at least one of argon gas, neon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process temperature of about 180 ° C to about 700 C. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process pressure of about 0.001 Torr to about 10 Torr. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene includes generating the plasma of the reaction gas by at least one of a radio frequency (R F) plasma generating device or a microwave (MW) plasma generating device. Withdrawn
The method of claim 10, wherein a power for generating the plasma of the reaction gas ranges from about 10 W to about 4000 W. Withdrawn
The method of claim 10, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, or an insulative material. Withdrawn
The method of claim 10, further comprising: pretreating a surface of the substrate using a reducing gas before the growing of the nanocrystalline graphene. Withdrawn
The method of claim 10, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the substrate, wherein the growing the nanocrystalline graphene directly on the substrate forms a first nanocrystalline graphene directly on the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A device comprising: a plasma enhanced chemical vapor deposition machine configured to perform the method of claim 10. Original
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: injecting a reaction gas into a reaction chamber, the reaction gas including a carbon source and an inert gas into a reaction chamber; generating a plasma of the reaction gas in the reaction chamber; and growing the nanocrystalline graphene directly on a surface of a substrate using the plasma of the reaction gas at a temperature of about 700 ° C or less. Withdrawn
The method of claim 39, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 39, further comprising: pretreating the surface of the substrate using a reducing gas. Withdrawn
The method of claim 39, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the surface of the substrate, wherein the growing the nanocrystalline graphene directly on the surface of the substrate forms a first nanocrystalline graphene directly on the surface of the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm, the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Original
The graphene product of claim 46, further comprising: a substrate, wherein the nanocrystalline graphene is directly on a surface of the substrate. Original
The graphene product of claim 46, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma enhanced chemical vapor deposition machine
No layer stack recorded.
Materials described outside the worked examples.
nanocrystalline graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of sp2-bonded carbon to total carbon | 50–99 % | nanocrystalline graphene |
hydrogen content in nanocrystalline graphene | 1–20 at% |
Table 1
In Table 1, "sp 2 b o nding carbon ratio" refers to the ratio of carbo
p. 9
Table 2
Table 2 below shows results of an XPS experiment in which a surface
p. 10
Table 3
Table 3 below shows results of an XPS experiment that were obtain w
p. 10
Table 4
Table 4 below sh ows results of an XPS experiment that were obtain
p. 10
Related documents with shared materials, methods, properties, or citations.
METHODS AND APPLICATIONS FOR CONDUCTIVE GRAPHENE INKS
STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE
Patent
Atlas literature
Patent
US 11,180,373Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C are views illustrating a method of forming nanocrystalline graphene, according to an example embodiment; [0047]
FIGS. 2A and 2B are graphs respectively illustrating D-parameter spectrums of nanocrystalline graphene and an amorphous carbon layer; [0048]
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIGS. 5A to 5 C are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0054]
FIGS. 6A to 6 D are views illustrating a method of forming nanocrystalline graphene, according to another example embodiment; [0055]
FIGS. 7A to 7 C are cross-sectional views of electronic devices according to other example embodiments; [0056]
FIGS. 8A to 8 C are cross-sectional views of pellicles according to some example embodiments; [0057]
FIGS. 9A to 9H are cross-sectional views of device structures including a barrier layer according to some example embodiments; and [0058]
FIG. 10 is a cross-sectional view of a device for forming nanocrystalline graphene according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%, and the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 1, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 1, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
The graphene product of claim 1, wherein the ratio of carbon having the sp2 bonding structure to total carbon in the nanocrystalline graphene is within a range of 50% to 99%. New
Canceled
Canceled
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at% to about at%, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Previously presented
The graphene product of claim 6, wherein a size of the nano- sized crystals ranges from about 0.5 nm to about 100 nm. Original
The graphene product of claim 6, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: growing the nanocrystalline graphene directly on a substrate using a plasma of a reaction gas at a temperature of about 700 ° C or less, the reaction gas including a carbon source and an inert gas. Withdrawn
The method of claim 10, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 10, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 10, wherein the reaction gas does not include hydrogen gas. Withdrawn
The method of claim 10, wherein the reaction gas further includes hydrogen gas. Withdrawn
The method of claim 10, wherein the carbon source includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Withdrawn
The method of claim 10, wherein the inert gas includes at least one of argon gas, neon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process temperature of about 180 ° C to about 700 C. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene is performed at a process pressure of about 0.001 Torr to about 10 Torr. Withdrawn
The method of claim 10, wherein the growing the nanocrystalline graphene includes generating the plasma of the reaction gas by at least one of a radio frequency (R F) plasma generating device or a microwave (MW) plasma generating device. Withdrawn
The method of claim 10, wherein a power for generating the plasma of the reaction gas ranges from about 10 W to about 4000 W. Withdrawn
The method of claim 10, wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound, a metal, or an insulative material. Withdrawn
The method of claim 10, further comprising: pretreating a surface of the substrate using a reducing gas before the growing of the nanocrystalline graphene. Withdrawn
The method of claim 10, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the substrate, wherein the growing the nanocrystalline graphene directly on the substrate forms a first nanocrystalline graphene directly on the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A device comprising: a plasma enhanced chemical vapor deposition machine configured to perform the method of claim 10. Original
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising: injecting a reaction gas into a reaction chamber, the reaction gas including a carbon source and an inert gas into a reaction chamber; generating a plasma of the reaction gas in the reaction chamber; and growing the nanocrystalline graphene directly on a surface of a substrate using the plasma of the reaction gas at a temperature of about 700 ° C or less. Withdrawn
The method of claim 39, wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Withdrawn
The method of claim 39, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Withdrawn
The method of claim 39, further comprising: pretreating the surface of the substrate using a reducing gas. Withdrawn
The method of claim 39, further comprising: forming a second nanocrystalline graphene after the growing the nanocrystalline graphene directly on the surface of the substrate, wherein the growing the nanocrystalline graphene directly on the surface of the substrate forms a first nanocrystalline graphene directly on the surface of the substrate using a first mixing ratio of the reaction gas to form the plasma, the forming the second nanocrystalline graphene forms the second nanocrystalline graphene on the first nanocrystalline graphene using a second mixing ratio of the reaction gas to form the plasma, and the second mixing ratio is different than the first mixing ratio. Withdrawn
A graphene product comprising: a nanocrystalline graphene, the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm, the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene includes hydrogen in an amount of about 1 at% to about 20 at%. Original
The graphene product of claim 46, wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc. Original
The graphene product of claim 46, further comprising: a substrate, wherein the nanocrystalline graphene is directly on a surface of the substrate. Original
The graphene product of claim 46, wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700 ° C or less through a plasma enhanced chemical vapor deposition process. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma enhanced chemical vapor deposition machine
No layer stack recorded.
Materials described outside the worked examples.
nanocrystalline graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of sp2-bonded carbon to total carbon | 50–99 % | nanocrystalline graphene |
hydrogen content in nanocrystalline graphene | 1–20 at% |
Table 1
In Table 1, "sp 2 b o nding carbon ratio" refers to the ratio of carbo
p. 9
Table 2
Table 2 below shows results of an XPS experiment in which a surface
p. 10
Table 3
Table 3 below shows results of an XPS experiment that were obtain w
p. 10
Table 4
Table 4 below sh ows results of an XPS experiment that were obtain
p. 10
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FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
density of nanocrystalline graphene | 1.6–2.1 g/cc | nanocrystalline graphene |
nano-sized crystal size | 0.5–100 nm | nanocrystalline graphene |
D-parameter of Auger spectrum of carbon | 18–22.9 eV | nanocrystalline graphene |
sheet resistance of nanocrystalline graphene | ≥ 1000 Ohm/sq | nanocrystalline graphene |
— | 10–4000 W | — |
Pressure | 0.001–10 Torr | — |
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
density of nanocrystalline graphene | 1.6–2.1 g/cc | nanocrystalline graphene |
nano-sized crystal size | 0.5–100 nm | nanocrystalline graphene |
D-parameter of Auger spectrum of carbon | 18–22.9 eV | nanocrystalline graphene |
sheet resistance of nanocrystalline graphene | ≥ 1000 Ohm/sq | nanocrystalline graphene |
— | 10–4000 W | — |
Pressure | 0.001–10 Torr | — |
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
density of nanocrystalline graphene | 1.6–2.1 g/cc | nanocrystalline graphene |
nano-sized crystal size | 0.5–100 nm | nanocrystalline graphene |
D-parameter of Auger spectrum of carbon | 18–22.9 eV | nanocrystalline graphene |
sheet resistance of nanocrystalline graphene | ≥ 1000 Ohm/sq | nanocrystalline graphene |
— | 10–4000 W | — |
Pressure | 0.001–10 Torr | — |
FIG. 3A is a transmission electron microscope (TEM) image illustrating nanocrystalline graphene grown on a polysilicon substrate using radio frequency (RF) …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
FIG. 4A is a TEM image illustrating nanocrystalline graphene formed on a polysilicon substrate using microwave (MW) plasma, according to an example embodiment; …
density of nanocrystalline graphene | 1.6–2.1 g/cc | nanocrystalline graphene |
nano-sized crystal size | 0.5–100 nm | nanocrystalline graphene |
D-parameter of Auger spectrum of carbon | 18–22.9 eV | nanocrystalline graphene |
sheet resistance of nanocrystalline graphene | ≥ 1000 Ohm/sq | nanocrystalline graphene |
— | 10–4000 W | — |
Pressure | 0.001–10 Torr | — |