Patent
US 8,835,930GALLIUM NITRIDE RECTIFYING DEVICE
Tadayoshi TSUCHIYA
US
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US 8,835,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a gallium nitride rectifying device according to one embodiment of the invention. The gallium nitride …
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
FIG.3 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 18 to 23 of the invention. For the purpose of …
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Serial No. 13/426,527 Docket No. PHCF-12006US 2 HIR.534 AMENDMENTS TO THE CLAIMS: Please cancel claim 10 without prejudice or disclaimer and amend the claims as follows: SVG 13426527.05-19-2014.HVGJF₈MPPXXIFW2.CLM.1.svg 0.15 7.04 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride rectifying device (pn junction diode)
Materials described outside the worked examples.
p-type gallium nitride based semiconductor layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type GaN layer carrier trap density upper bound | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density upper bound | 10000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,835,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a gallium nitride rectifying device according to one embodiment of the invention. The gallium nitride …
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
FIG.3 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 18 to 23 of the invention. For the purpose of …
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Serial No. 13/426,527 Docket No. PHCF-12006US 2 HIR.534 AMENDMENTS TO THE CLAIMS: Please cancel claim 10 without prejudice or disclaimer and amend the claims as follows: SVG 13426527.05-19-2014.HVGJF₈MPPXXIFW2.CLM.1.svg 0.15 7.04 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride rectifying device (pn junction diode)
Materials described outside the worked examples.
p-type gallium nitride based semiconductor layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type GaN layer carrier trap density upper bound | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density upper bound | 10000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,835,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a gallium nitride rectifying device according to one embodiment of the invention. The gallium nitride …
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
FIG.3 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 18 to 23 of the invention. For the purpose of …
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Serial No. 13/426,527 Docket No. PHCF-12006US 2 HIR.534 AMENDMENTS TO THE CLAIMS: Please cancel claim 10 without prejudice or disclaimer and amend the claims as follows: SVG 13426527.05-19-2014.HVGJF₈MPPXXIFW2.CLM.1.svg 0.15 7.04 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride rectifying device (pn junction diode)
Materials described outside the worked examples.
p-type gallium nitride based semiconductor layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type GaN layer carrier trap density upper bound | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density upper bound | 10000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,835,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a gallium nitride rectifying device according to one embodiment of the invention. The gallium nitride …
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
FIG.3 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 18 to 23 of the invention. For the purpose of …
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Serial No. 13/426,527 Docket No. PHCF-12006US 2 HIR.534 AMENDMENTS TO THE CLAIMS: Please cancel claim 10 without prejudice or disclaimer and amend the claims as follows: SVG 13426527.05-19-2014.HVGJF₈MPPXXIFW2.CLM.1.svg 0.15 7.04 Black and white
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride rectifying device (pn junction diode)
Materials described outside the worked examples.
p-type gallium nitride based semiconductor layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a cross-sectional view schematically showing a gallium nitride rectifying device according to Examples 1 to 17 of the invention. A t the same …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type GaN layer carrier trap density upper bound | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density upper bound | 10000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
p-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000 cm⁻³ | GaN |
Baliga figure of merit (BFOM) lower bound | 1.5 GW/cm² | — |
Baliga figure of merit (BFOM) higher bound (modification viii) | 4000000000 W/cm² | — |
light output by power distribution range | — | — |
— | ≤ 0.1 W | — |
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
p-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000 cm⁻³ | GaN |
Baliga figure of merit (BFOM) lower bound | 1.5 GW/cm² | — |
Baliga figure of merit (BFOM) higher bound (modification viii) | 4000000000 W/cm² | — |
light output by power distribution range | — | — |
— | ≤ 0.1 W | — |
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
p-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000 cm⁻³ | GaN |
Baliga figure of merit (BFOM) lower bound | 1.5 GW/cm² | — |
Baliga figure of merit (BFOM) higher bound (modification viii) | 4000000000 W/cm² | — |
light output by power distribution range | — | — |
— | ≤ 0.1 W | — |
FIG. 4 is a graph showing a relationship in theoretical limitation between a breakdown voltage of the pn junction diode and an on resistance of the device (for …
p-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000000 cm⁻³ | GaN |
n-type GaN layer carrier trap density tighter bound (modification ii) | 1000000000000000 cm⁻³ | GaN |
Baliga figure of merit (BFOM) lower bound | 1.5 GW/cm² | — |
Baliga figure of merit (BFOM) higher bound (modification viii) | 4000000000 W/cm² | — |
light output by power distribution range | — | — |
— | ≤ 0.1 W | — |