Patent
US 8,994,031Gallium Nitride Compound Semiconductor Light Emitting Element and Light Source Provided with Said Light Emitting Element
Ryou KATO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,994,031Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Ala GabInC N (where 0 < a, b, c-1 and a -b-c=) semiconductor crystal, some of the G a atoms shown …
FIG. 2 shows four primitive vectors a i, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIGS. 3(a) through 3 (d) are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0028]
FIG. 4(b) illustrates the crystal structure of a c plane. [0029]
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 7 is a vertical cross-sectional view schematically illustrating the structure of a nitride gallium nitride based compound semiconductor light-emitting …
FIG. 8 is a schematic representation showing an exemplary growing sequence to form the active layer of a nitride gallium nitride based compound semiconductor …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 10 is a cross-sectional view illustrating an embodiment as a white light source.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, and the well layer having a lower surface and an upper surface and having an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer, and wherein the In composition of the well layer has a local minimum at a level that is defined by a certain distance from the lower surface and a portion of the well layer where the In composition has the local minimum runs parallel to the lower surface, and the In composition of the well layer has a local minimum at multiple levels that are defined by multiple different distances from the lower surface and has a local maximum between those levels. currently amended
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum of the In composition is less than 90% of the local maximum of the In composition.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer is made of A IxlnyGaZ N (where 0 < x < 1, 0 < y < 1 and 0 <z < 1).
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer has a thickness of 6 nm to 20 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the barrier layer has a thickness of 7 nm to 40 nm. 3 of 7 Application No. 13/742,484 PATENT
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer has a multiple quantum well structure.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer includes the well layers and the barrier layers arranged between the well layers.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum level or the-di-v-idinglayr is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
A light source comprising: the gallium nitride based compound semiconductor light-emitting element of claim 1; and a wavelength changing section which includes a phosphor that changes the wavelength of light emitted from the gallium nitride based compound semiconductor light-emitting element.
canceled
The gallium nitride based compound semiconductor light-emitting element of claim {{2}} 1, wherein the local maximum and the local minimum alternate with each other in a cycle that is defined by a thickness of 4 nm or less.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, 2 of 7 Application No. 13/742,484 PATENT and the well layer including at least one dividing layer which divides the well layer into multiple partial layers, and wherein the In composition of the dividing layer is less than 90% of the In composition of the partial layers.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer divides the well layer so that the partial layers each have a thickness of 3 nm or less.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer is made of Ala lnbGac N (where 0 < a < 1, 0 < b < 1 and 0 <c <_ 1).
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer has a thickness of 0.3 nm to 0.8 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein in the dividing layer, the average of the In composition at any of planes that are parallel to each other in the thickness direction is within  ±10% of the average In composition of the entire dividing layer.
The gallium nitride based compound semiconductor wherein the dividing layer is different from a level radiative recombination of carriers is the highest. withdrawn light-emitting element of claim 5, in the well layer at which the probability of 5 of 7
A method for fabricating a gallium nitride based compound semiconductor light-emitting element, the method comprising the steps of: forming a well layer, of which the growing plane is an m plane and in which the composition of In changes in the thickness direction; and forming a barrier layer, of which the growing plane is an m plane, wherein the step of forming the well layer includes reducing or stopping the supply of In during the process of growing the well layer while supplying an In source material. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes making the In composition of the well layer a local minimum at a 4 of 7 Application No. 13/742,484 PATENT level that is defined by a certain distance from the lower surface of the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In is carried out a number of times during the process of growing the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes forming at least one dividing layer which divides the well layer into multiple partial layers. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of forming a well layer includes keeping a growing temperature and a growing pressure constant even during the step of reducing or stopping the supply of In. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the level in the well layer at which the In composition has a local minimum or the dividing layer is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting element
light source with wavelength changing section
Materials described outside the worked examples.
InGaN well layer
AlxInyGazN
GaN-based barrier layer
dividing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–0.8 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,994,031Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Ala GabInC N (where 0 < a, b, c-1 and a -b-c=) semiconductor crystal, some of the G a atoms shown …
FIG. 2 shows four primitive vectors a i, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIGS. 3(a) through 3 (d) are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0028]
FIG. 4(b) illustrates the crystal structure of a c plane. [0029]
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 7 is a vertical cross-sectional view schematically illustrating the structure of a nitride gallium nitride based compound semiconductor light-emitting …
FIG. 8 is a schematic representation showing an exemplary growing sequence to form the active layer of a nitride gallium nitride based compound semiconductor …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 10 is a cross-sectional view illustrating an embodiment as a white light source.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, and the well layer having a lower surface and an upper surface and having an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer, and wherein the In composition of the well layer has a local minimum at a level that is defined by a certain distance from the lower surface and a portion of the well layer where the In composition has the local minimum runs parallel to the lower surface, and the In composition of the well layer has a local minimum at multiple levels that are defined by multiple different distances from the lower surface and has a local maximum between those levels. currently amended
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum of the In composition is less than 90% of the local maximum of the In composition.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer is made of A IxlnyGaZ N (where 0 < x < 1, 0 < y < 1 and 0 <z < 1).
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer has a thickness of 6 nm to 20 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the barrier layer has a thickness of 7 nm to 40 nm. 3 of 7 Application No. 13/742,484 PATENT
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer has a multiple quantum well structure.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer includes the well layers and the barrier layers arranged between the well layers.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum level or the-di-v-idinglayr is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
A light source comprising: the gallium nitride based compound semiconductor light-emitting element of claim 1; and a wavelength changing section which includes a phosphor that changes the wavelength of light emitted from the gallium nitride based compound semiconductor light-emitting element.
canceled
The gallium nitride based compound semiconductor light-emitting element of claim {{2}} 1, wherein the local maximum and the local minimum alternate with each other in a cycle that is defined by a thickness of 4 nm or less.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, 2 of 7 Application No. 13/742,484 PATENT and the well layer including at least one dividing layer which divides the well layer into multiple partial layers, and wherein the In composition of the dividing layer is less than 90% of the In composition of the partial layers.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer divides the well layer so that the partial layers each have a thickness of 3 nm or less.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer is made of Ala lnbGac N (where 0 < a < 1, 0 < b < 1 and 0 <c <_ 1).
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer has a thickness of 0.3 nm to 0.8 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein in the dividing layer, the average of the In composition at any of planes that are parallel to each other in the thickness direction is within  ±10% of the average In composition of the entire dividing layer.
The gallium nitride based compound semiconductor wherein the dividing layer is different from a level radiative recombination of carriers is the highest. withdrawn light-emitting element of claim 5, in the well layer at which the probability of 5 of 7
A method for fabricating a gallium nitride based compound semiconductor light-emitting element, the method comprising the steps of: forming a well layer, of which the growing plane is an m plane and in which the composition of In changes in the thickness direction; and forming a barrier layer, of which the growing plane is an m plane, wherein the step of forming the well layer includes reducing or stopping the supply of In during the process of growing the well layer while supplying an In source material. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes making the In composition of the well layer a local minimum at a 4 of 7 Application No. 13/742,484 PATENT level that is defined by a certain distance from the lower surface of the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In is carried out a number of times during the process of growing the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes forming at least one dividing layer which divides the well layer into multiple partial layers. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of forming a well layer includes keeping a growing temperature and a growing pressure constant even during the step of reducing or stopping the supply of In. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the level in the well layer at which the In composition has a local minimum or the dividing layer is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting element
light source with wavelength changing section
Materials described outside the worked examples.
InGaN well layer
AlxInyGazN
GaN-based barrier layer
dividing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–0.8 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,994,031Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Ala GabInC N (where 0 < a, b, c-1 and a -b-c=) semiconductor crystal, some of the G a atoms shown …
FIG. 2 shows four primitive vectors a i, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIGS. 3(a) through 3 (d) are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0028]
FIG. 4(b) illustrates the crystal structure of a c plane. [0029]
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 7 is a vertical cross-sectional view schematically illustrating the structure of a nitride gallium nitride based compound semiconductor light-emitting …
FIG. 8 is a schematic representation showing an exemplary growing sequence to form the active layer of a nitride gallium nitride based compound semiconductor …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 10 is a cross-sectional view illustrating an embodiment as a white light source.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, and the well layer having a lower surface and an upper surface and having an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer, and wherein the In composition of the well layer has a local minimum at a level that is defined by a certain distance from the lower surface and a portion of the well layer where the In composition has the local minimum runs parallel to the lower surface, and the In composition of the well layer has a local minimum at multiple levels that are defined by multiple different distances from the lower surface and has a local maximum between those levels. currently amended
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum of the In composition is less than 90% of the local maximum of the In composition.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer is made of A IxlnyGaZ N (where 0 < x < 1, 0 < y < 1 and 0 <z < 1).
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer has a thickness of 6 nm to 20 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the barrier layer has a thickness of 7 nm to 40 nm. 3 of 7 Application No. 13/742,484 PATENT
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer has a multiple quantum well structure.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer includes the well layers and the barrier layers arranged between the well layers.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum level or the-di-v-idinglayr is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
A light source comprising: the gallium nitride based compound semiconductor light-emitting element of claim 1; and a wavelength changing section which includes a phosphor that changes the wavelength of light emitted from the gallium nitride based compound semiconductor light-emitting element.
canceled
The gallium nitride based compound semiconductor light-emitting element of claim {{2}} 1, wherein the local maximum and the local minimum alternate with each other in a cycle that is defined by a thickness of 4 nm or less.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, 2 of 7 Application No. 13/742,484 PATENT and the well layer including at least one dividing layer which divides the well layer into multiple partial layers, and wherein the In composition of the dividing layer is less than 90% of the In composition of the partial layers.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer divides the well layer so that the partial layers each have a thickness of 3 nm or less.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer is made of Ala lnbGac N (where 0 < a < 1, 0 < b < 1 and 0 <c <_ 1).
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer has a thickness of 0.3 nm to 0.8 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein in the dividing layer, the average of the In composition at any of planes that are parallel to each other in the thickness direction is within  ±10% of the average In composition of the entire dividing layer.
The gallium nitride based compound semiconductor wherein the dividing layer is different from a level radiative recombination of carriers is the highest. withdrawn light-emitting element of claim 5, in the well layer at which the probability of 5 of 7
A method for fabricating a gallium nitride based compound semiconductor light-emitting element, the method comprising the steps of: forming a well layer, of which the growing plane is an m plane and in which the composition of In changes in the thickness direction; and forming a barrier layer, of which the growing plane is an m plane, wherein the step of forming the well layer includes reducing or stopping the supply of In during the process of growing the well layer while supplying an In source material. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes making the In composition of the well layer a local minimum at a 4 of 7 Application No. 13/742,484 PATENT level that is defined by a certain distance from the lower surface of the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In is carried out a number of times during the process of growing the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes forming at least one dividing layer which divides the well layer into multiple partial layers. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of forming a well layer includes keeping a growing temperature and a growing pressure constant even during the step of reducing or stopping the supply of In. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the level in the well layer at which the In composition has a local minimum or the dividing layer is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting element
light source with wavelength changing section
Materials described outside the worked examples.
InGaN well layer
AlxInyGazN
GaN-based barrier layer
dividing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–0.8 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,994,031Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Ala GabInC N (where 0 < a, b, c-1 and a -b-c=) semiconductor crystal, some of the G a atoms shown …
FIG. 2 shows four primitive vectors a i, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIGS. 3(a) through 3 (d) are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0028]
FIG. 4(b) illustrates the crystal structure of a c plane. [0029]
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 7 is a vertical cross-sectional view schematically illustrating the structure of a nitride gallium nitride based compound semiconductor light-emitting …
FIG. 8 is a schematic representation showing an exemplary growing sequence to form the active layer of a nitride gallium nitride based compound semiconductor …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 10 is a cross-sectional view illustrating an embodiment as a white light source.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, and the well layer having a lower surface and an upper surface and having an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer, and wherein the In composition of the well layer has a local minimum at a level that is defined by a certain distance from the lower surface and a portion of the well layer where the In composition has the local minimum runs parallel to the lower surface, and the In composition of the well layer has a local minimum at multiple levels that are defined by multiple different distances from the lower surface and has a local maximum between those levels. currently amended
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum of the In composition is less than 90% of the local maximum of the In composition.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer is made of A IxlnyGaZ N (where 0 < x < 1, 0 < y < 1 and 0 <z < 1).
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the well layer has a thickness of 6 nm to 20 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the barrier layer has a thickness of 7 nm to 40 nm. 3 of 7 Application No. 13/742,484 PATENT
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer has a multiple quantum well structure.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the active layer includes the well layers and the barrier layers arranged between the well layers.
The gallium nitride based compound semiconductor light-emitting element of claim 1, wherein the local minimum level or the-di-v-idinglayr is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
A light source comprising: the gallium nitride based compound semiconductor light-emitting element of claim 1; and a wavelength changing section which includes a phosphor that changes the wavelength of light emitted from the gallium nitride based compound semiconductor light-emitting element.
canceled
The gallium nitride based compound semiconductor light-emitting element of claim {{2}} 1, wherein the local maximum and the local minimum alternate with each other in a cycle that is defined by a thickness of 4 nm or less.
A gallium nitride based compound semiconductor light-emitting element comprising an active layer, the active layer including a well layer and a barrier layer, each of the well layer and the barrier layer being a semiconductor layer which has an m plane as its growing plane, 2 of 7 Application No. 13/742,484 PATENT and the well layer including at least one dividing layer which divides the well layer into multiple partial layers, and wherein the In composition of the dividing layer is less than 90% of the In composition of the partial layers.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer divides the well layer so that the partial layers each have a thickness of 3 nm or less.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer is made of Ala lnbGac N (where 0 < a < 1, 0 < b < 1 and 0 <c <_ 1).
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein the dividing layer has a thickness of 0.3 nm to 0.8 nm.
The gallium nitride based compound semiconductor light-emitting element of claim 5, wherein in the dividing layer, the average of the In composition at any of planes that are parallel to each other in the thickness direction is within  ±10% of the average In composition of the entire dividing layer.
The gallium nitride based compound semiconductor wherein the dividing layer is different from a level radiative recombination of carriers is the highest. withdrawn light-emitting element of claim 5, in the well layer at which the probability of 5 of 7
A method for fabricating a gallium nitride based compound semiconductor light-emitting element, the method comprising the steps of: forming a well layer, of which the growing plane is an m plane and in which the composition of In changes in the thickness direction; and forming a barrier layer, of which the growing plane is an m plane, wherein the step of forming the well layer includes reducing or stopping the supply of In during the process of growing the well layer while supplying an In source material. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes making the In composition of the well layer a local minimum at a 4 of 7 Application No. 13/742,484 PATENT level that is defined by a certain distance from the lower surface of the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In is carried out a number of times during the process of growing the well layer. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of reducing or stopping the supply of In includes forming at least one dividing layer which divides the well layer into multiple partial layers. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the step of forming a well layer includes keeping a growing temperature and a growing pressure constant even during the step of reducing or stopping the supply of In. withdrawn
The method for fabricating a gallium nitride based compound semiconductor light-emitting element of claim 17, wherein the level in the well layer at which the In composition has a local minimum or the dividing layer is different from a level in the well layer at which the probability of radiative recombination of carriers is the highest.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting element
light source with wavelength changing section
Materials described outside the worked examples.
InGaN well layer
AlxInyGazN
GaN-based barrier layer
dividing layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5(a) and 5(b) show the results of a three- dimensional atomic probe analysis which was carried out to see how an In composition fluctuated in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–0.8 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
AlInGaN dividing layer
AlaInbGacN
GaN-based semiconductor
AlxGayInzN
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
| — |
Thickness | 9–17 nm | — |
Thickness | 7–40 nm | — |
Duration | 2–8 seconds | — |
Thickness | ≤ 7 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 420 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 6 nm | — |
Thickness | ≥ 40 nm | — |
AlInGaN dividing layer
AlaInbGacN
GaN-based semiconductor
AlxGayInzN
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
| — |
Thickness | 9–17 nm | — |
Thickness | 7–40 nm | — |
Duration | 2–8 seconds | — |
Thickness | ≤ 7 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 420 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 6 nm | — |
Thickness | ≥ 40 nm | — |
AlInGaN dividing layer
AlaInbGacN
GaN-based semiconductor
AlxGayInzN
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
| — |
Thickness | 9–17 nm | — |
Thickness | 7–40 nm | — |
Duration | 2–8 seconds | — |
Thickness | ≤ 7 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 420 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 6 nm | — |
Thickness | ≥ 40 nm | — |
AlInGaN dividing layer
AlaInbGacN
GaN-based semiconductor
AlxGayInzN
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 6(b) is a graph showing the results obtained for a specific example of the present disclosure. On the left-hand side of this graph, also shown SVG …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
FIG. 9 is a graph showing the results of a photoluminescence measurement which was carried out on a sample that had been made as an embodiment of the present …
| — |
Thickness | 9–17 nm | — |
Thickness | 7–40 nm | — |
Duration | 2–8 seconds | — |
Thickness | ≤ 7 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 420 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 6 nm | — |
Thickness | ≥ 40 nm | — |