Patent
US 8,686,397LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES
Shuji Nakamura, Steven P. DenBaars, Shinichi Tanaka, Daniel Feezell et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,686,397Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 3 illustrates a method of fabricating or growing a light emitting device or light-emitting device structure. The method can comprise the following steps, …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 5 is a diagram that illustrates the Auger recombination process for isotropic strain in c-plane I II -nitride 500, and non-isotropic strain in semipolar …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
FIG. 7 is a graph plotting output power in mW, at a drive current of 20 mA (pulsed at 1 %), for three semipolar (20-2-1) LED device structures A, B, C having …
FIG. 8 is a graph plotting droop ratio as a function of drive current, for three semipolar (20-2-1) LED device structures A, B, C having the structure based on
FIG. 9 is a graph plotting EQE (%) as a function of drive current (A/cm2) for three semipolar (20-2-1) LED device structures A, B, C having the structure based …
FIG. 30 2(a), wherein device A has a 3QW active region with GaN barriers, device B has a 3QW 16 active region with GaN barriers, 10 sets of n-SLs with Si …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please amend claims 6-8, 10-11, 14, 16, 19, and 20 as follows: SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.1.svg 0.16 5.93 Black and white least: a I II-nitride light-emitting device structure, grown on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least 35 Amps per centimeter square (A/cm 2).
The device structure of claim 1, wherein the droop is less than 1 % at the current density of at least 35 A/cm2 and less than 10% at the current density of at least 100 A/cm 2.
The device structure of claim 1, wherein the light-emitting device structure has a peak emission at a blue emission wavelength.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is semipolar Gallium Nitride (GaN) substrate.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate. SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.2.svg 0.75 6.52 Black and white
The device structure of claim 1, whercin th e further comprLigart n-1ypeIniride superl atti ce_(n-SL c s c m m i ng~layers having different III- nitride composition and wherein each of the layers is doped with Silicon.
The device structure of claim 1, we-rein te further com p rising a n n-type III -ni tr ide su perlatt i ce (n-SL ' [[is]] located below an active region of the light- emitting device.
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure includes an n-type I II -nitride superlattice (n-S L).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure: has a semi-polar orientation, strain, reduced defects, an alloy uniformity, and an active region comprising a number of indium containing quantum wells forming the semipolar band structure, and is mounted in a light emitting diode (L ED) device, and wherein the L ED device has the EQE droop of 15% percent or less at the current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein: -8- G&C 30794.415-US-U 1 the light emitting device structure includes one or more strain compensated layers between an active region and the substrate, and each of the strain compensated layers have a lattice matching, composition, a thickness below a critical thickness, and a position that engineer st r ain and defects in the active region wherein the light- emitting device structure has the EQE droop of 15% percent or less.
The device structure of claim 1, wherein the III- nitride light-emitting device structure has a semipolar orientation and band structure wherein the light-emitting device structure has the External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to the peak EQE, at the current density of at least 35 Amps per centimeter square (A/cm 2). -9- G&C 30794.415-US-U
A method of fabricating an opto-electronic device, comprising: growing a I II -nitride light emitting device structure on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface, wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least Amps per centimeter square (A/cm 2).
The method of claim 15, wherein: the light-emitting device has a light output power that is at least 50 milliwatts, the E)E droop i s less than 1 % at the current density of at least 35 A/cm 2 and less than 10% at the current density of at least 100 A/cm2, and the light emitting device structure has a peak emission at a blue emission wavelength.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL comprises I II -nitride SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.3.svg 0.47 6.45 Black and white
The method claim 15, wherein: the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL is located below an active region of the light-emitting device, -7- G&C 30794.415-US-U 1 the active region comprises two or more indium containing quantum wells (QWs) with barriers, the quantum wells having a QW number, a QW composition, and a QW thickness, the barriers having a barrier composition, barrier thickness, and barrier doping, the n-S L comprises a number of periods, an S L doping, an S L composition, and layers each having a layer thickness, and the QW number, the QW composition, the QW thickness, the barrier composition, the barrier thickness, the barrier doping, the number of periods, the S L doping, the S L composition, the layer thickness are such that: the 11-nitridel ght itti gdevice stru cture co mprsigai ght emitti ngdide_(LED)device has a peak emission at a blue emission wavelength or longer, and the E Q)E droop is 15 % or less when the LED device is driven at a current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The method of claim 15, wherein the light-emitting device structure includes an n-type I II -nitride superlattice (n-S L).
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride light-emitting device structure (LED) on semipolar GaN substrate
Fully packaged semipolar GaN LED with ZnO submount
Materials described outside the worked examples.
(Al,Ga,In)N III-nitride
semipolar GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EQE droop at 35 A/cm2 (claimed, inventive device) | ≤ 15 % | (Al,Ga,In)N III-nitride |
EQE droop at 35 A/cm2 (prior art, background) | 20 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,686,397Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 3 illustrates a method of fabricating or growing a light emitting device or light-emitting device structure. The method can comprise the following steps, …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 5 is a diagram that illustrates the Auger recombination process for isotropic strain in c-plane I II -nitride 500, and non-isotropic strain in semipolar …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
FIG. 7 is a graph plotting output power in mW, at a drive current of 20 mA (pulsed at 1 %), for three semipolar (20-2-1) LED device structures A, B, C having …
FIG. 8 is a graph plotting droop ratio as a function of drive current, for three semipolar (20-2-1) LED device structures A, B, C having the structure based on
FIG. 9 is a graph plotting EQE (%) as a function of drive current (A/cm2) for three semipolar (20-2-1) LED device structures A, B, C having the structure based …
FIG. 30 2(a), wherein device A has a 3QW active region with GaN barriers, device B has a 3QW 16 active region with GaN barriers, 10 sets of n-SLs with Si …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please amend claims 6-8, 10-11, 14, 16, 19, and 20 as follows: SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.1.svg 0.16 5.93 Black and white least: a I II-nitride light-emitting device structure, grown on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least 35 Amps per centimeter square (A/cm 2).
The device structure of claim 1, wherein the droop is less than 1 % at the current density of at least 35 A/cm2 and less than 10% at the current density of at least 100 A/cm 2.
The device structure of claim 1, wherein the light-emitting device structure has a peak emission at a blue emission wavelength.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is semipolar Gallium Nitride (GaN) substrate.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate. SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.2.svg 0.75 6.52 Black and white
The device structure of claim 1, whercin th e further comprLigart n-1ypeIniride superl atti ce_(n-SL c s c m m i ng~layers having different III- nitride composition and wherein each of the layers is doped with Silicon.
The device structure of claim 1, we-rein te further com p rising a n n-type III -ni tr ide su perlatt i ce (n-SL ' [[is]] located below an active region of the light- emitting device.
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure includes an n-type I II -nitride superlattice (n-S L).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure: has a semi-polar orientation, strain, reduced defects, an alloy uniformity, and an active region comprising a number of indium containing quantum wells forming the semipolar band structure, and is mounted in a light emitting diode (L ED) device, and wherein the L ED device has the EQE droop of 15% percent or less at the current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein: -8- G&C 30794.415-US-U 1 the light emitting device structure includes one or more strain compensated layers between an active region and the substrate, and each of the strain compensated layers have a lattice matching, composition, a thickness below a critical thickness, and a position that engineer st r ain and defects in the active region wherein the light- emitting device structure has the EQE droop of 15% percent or less.
The device structure of claim 1, wherein the III- nitride light-emitting device structure has a semipolar orientation and band structure wherein the light-emitting device structure has the External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to the peak EQE, at the current density of at least 35 Amps per centimeter square (A/cm 2). -9- G&C 30794.415-US-U
A method of fabricating an opto-electronic device, comprising: growing a I II -nitride light emitting device structure on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface, wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least Amps per centimeter square (A/cm 2).
The method of claim 15, wherein: the light-emitting device has a light output power that is at least 50 milliwatts, the E)E droop i s less than 1 % at the current density of at least 35 A/cm 2 and less than 10% at the current density of at least 100 A/cm2, and the light emitting device structure has a peak emission at a blue emission wavelength.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL comprises I II -nitride SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.3.svg 0.47 6.45 Black and white
The method claim 15, wherein: the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL is located below an active region of the light-emitting device, -7- G&C 30794.415-US-U 1 the active region comprises two or more indium containing quantum wells (QWs) with barriers, the quantum wells having a QW number, a QW composition, and a QW thickness, the barriers having a barrier composition, barrier thickness, and barrier doping, the n-S L comprises a number of periods, an S L doping, an S L composition, and layers each having a layer thickness, and the QW number, the QW composition, the QW thickness, the barrier composition, the barrier thickness, the barrier doping, the number of periods, the S L doping, the S L composition, the layer thickness are such that: the 11-nitridel ght itti gdevice stru cture co mprsigai ght emitti ngdide_(LED)device has a peak emission at a blue emission wavelength or longer, and the E Q)E droop is 15 % or less when the LED device is driven at a current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The method of claim 15, wherein the light-emitting device structure includes an n-type I II -nitride superlattice (n-S L).
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride light-emitting device structure (LED) on semipolar GaN substrate
Fully packaged semipolar GaN LED with ZnO submount
Materials described outside the worked examples.
(Al,Ga,In)N III-nitride
semipolar GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EQE droop at 35 A/cm2 (claimed, inventive device) | ≤ 15 % | (Al,Ga,In)N III-nitride |
EQE droop at 35 A/cm2 (prior art, background) | 20 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,686,397Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 3 illustrates a method of fabricating or growing a light emitting device or light-emitting device structure. The method can comprise the following steps, …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 5 is a diagram that illustrates the Auger recombination process for isotropic strain in c-plane I II -nitride 500, and non-isotropic strain in semipolar …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
FIG. 7 is a graph plotting output power in mW, at a drive current of 20 mA (pulsed at 1 %), for three semipolar (20-2-1) LED device structures A, B, C having …
FIG. 8 is a graph plotting droop ratio as a function of drive current, for three semipolar (20-2-1) LED device structures A, B, C having the structure based on
FIG. 9 is a graph plotting EQE (%) as a function of drive current (A/cm2) for three semipolar (20-2-1) LED device structures A, B, C having the structure based …
FIG. 30 2(a), wherein device A has a 3QW active region with GaN barriers, device B has a 3QW 16 active region with GaN barriers, 10 sets of n-SLs with Si …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please amend claims 6-8, 10-11, 14, 16, 19, and 20 as follows: SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.1.svg 0.16 5.93 Black and white least: a I II-nitride light-emitting device structure, grown on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least 35 Amps per centimeter square (A/cm 2).
The device structure of claim 1, wherein the droop is less than 1 % at the current density of at least 35 A/cm2 and less than 10% at the current density of at least 100 A/cm 2.
The device structure of claim 1, wherein the light-emitting device structure has a peak emission at a blue emission wavelength.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is semipolar Gallium Nitride (GaN) substrate.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate. SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.2.svg 0.75 6.52 Black and white
The device structure of claim 1, whercin th e further comprLigart n-1ypeIniride superl atti ce_(n-SL c s c m m i ng~layers having different III- nitride composition and wherein each of the layers is doped with Silicon.
The device structure of claim 1, we-rein te further com p rising a n n-type III -ni tr ide su perlatt i ce (n-SL ' [[is]] located below an active region of the light- emitting device.
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure includes an n-type I II -nitride superlattice (n-S L).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure: has a semi-polar orientation, strain, reduced defects, an alloy uniformity, and an active region comprising a number of indium containing quantum wells forming the semipolar band structure, and is mounted in a light emitting diode (L ED) device, and wherein the L ED device has the EQE droop of 15% percent or less at the current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein: -8- G&C 30794.415-US-U 1 the light emitting device structure includes one or more strain compensated layers between an active region and the substrate, and each of the strain compensated layers have a lattice matching, composition, a thickness below a critical thickness, and a position that engineer st r ain and defects in the active region wherein the light- emitting device structure has the EQE droop of 15% percent or less.
The device structure of claim 1, wherein the III- nitride light-emitting device structure has a semipolar orientation and band structure wherein the light-emitting device structure has the External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to the peak EQE, at the current density of at least 35 Amps per centimeter square (A/cm 2). -9- G&C 30794.415-US-U
A method of fabricating an opto-electronic device, comprising: growing a I II -nitride light emitting device structure on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface, wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least Amps per centimeter square (A/cm 2).
The method of claim 15, wherein: the light-emitting device has a light output power that is at least 50 milliwatts, the E)E droop i s less than 1 % at the current density of at least 35 A/cm 2 and less than 10% at the current density of at least 100 A/cm2, and the light emitting device structure has a peak emission at a blue emission wavelength.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL comprises I II -nitride SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.3.svg 0.47 6.45 Black and white
The method claim 15, wherein: the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL is located below an active region of the light-emitting device, -7- G&C 30794.415-US-U 1 the active region comprises two or more indium containing quantum wells (QWs) with barriers, the quantum wells having a QW number, a QW composition, and a QW thickness, the barriers having a barrier composition, barrier thickness, and barrier doping, the n-S L comprises a number of periods, an S L doping, an S L composition, and layers each having a layer thickness, and the QW number, the QW composition, the QW thickness, the barrier composition, the barrier thickness, the barrier doping, the number of periods, the S L doping, the S L composition, the layer thickness are such that: the 11-nitridel ght itti gdevice stru cture co mprsigai ght emitti ngdide_(LED)device has a peak emission at a blue emission wavelength or longer, and the E Q)E droop is 15 % or less when the LED device is driven at a current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The method of claim 15, wherein the light-emitting device structure includes an n-type I II -nitride superlattice (n-S L).
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride light-emitting device structure (LED) on semipolar GaN substrate
Fully packaged semipolar GaN LED with ZnO submount
Materials described outside the worked examples.
(Al,Ga,In)N III-nitride
semipolar GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EQE droop at 35 A/cm2 (claimed, inventive device) | ≤ 15 % | (Al,Ga,In)N III-nitride |
EQE droop at 35 A/cm2 (prior art, background) | 20 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,686,397Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 3 illustrates a method of fabricating or growing a light emitting device or light-emitting device structure. The method can comprise the following steps, …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 5 is a diagram that illustrates the Auger recombination process for isotropic strain in c-plane I II -nitride 500, and non-isotropic strain in semipolar …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
FIG. 7 is a graph plotting output power in mW, at a drive current of 20 mA (pulsed at 1 %), for three semipolar (20-2-1) LED device structures A, B, C having …
FIG. 8 is a graph plotting droop ratio as a function of drive current, for three semipolar (20-2-1) LED device structures A, B, C having the structure based on
FIG. 9 is a graph plotting EQE (%) as a function of drive current (A/cm2) for three semipolar (20-2-1) LED device structures A, B, C having the structure based …
FIG. 30 2(a), wherein device A has a 3QW active region with GaN barriers, device B has a 3QW 16 active region with GaN barriers, 10 sets of n-SLs with Si …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please amend claims 6-8, 10-11, 14, 16, 19, and 20 as follows: SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.1.svg 0.16 5.93 Black and white least: a I II-nitride light-emitting device structure, grown on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least 35 Amps per centimeter square (A/cm 2).
The device structure of claim 1, wherein the droop is less than 1 % at the current density of at least 35 A/cm2 and less than 10% at the current density of at least 100 A/cm 2.
The device structure of claim 1, wherein the light-emitting device structure has a peak emission at a blue emission wavelength.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is semipolar Gallium Nitride (GaN) substrate.
The device structure of claim 1, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate. SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.2.svg 0.75 6.52 Black and white
The device structure of claim 1, whercin th e further comprLigart n-1ypeIniride superl atti ce_(n-SL c s c m m i ng~layers having different III- nitride composition and wherein each of the layers is doped with Silicon.
The device structure of claim 1, we-rein te further com p rising a n n-type III -ni tr ide su perlatt i ce (n-SL ' [[is]] located below an active region of the light- emitting device.
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure includes an n-type I II -nitride superlattice (n-S L).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein the light- emitting device structure: has a semi-polar orientation, strain, reduced defects, an alloy uniformity, and an active region comprising a number of indium containing quantum wells forming the semipolar band structure, and is mounted in a light emitting diode (L ED) device, and wherein the L ED device has the EQE droop of 15% percent or less at the current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The device structure of claim 1, wherein: -8- G&C 30794.415-US-U 1 the light emitting device structure includes one or more strain compensated layers between an active region and the substrate, and each of the strain compensated layers have a lattice matching, composition, a thickness below a critical thickness, and a position that engineer st r ain and defects in the active region wherein the light- emitting device structure has the EQE droop of 15% percent or less.
The device structure of claim 1, wherein the III- nitride light-emitting device structure has a semipolar orientation and band structure wherein the light-emitting device structure has the External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to the peak EQE, at the current density of at least 35 Amps per centimeter square (A/cm 2). -9- G&C 30794.415-US-U
A method of fabricating an opto-electronic device, comprising: growing a I II -nitride light emitting device structure on or above a semipolar Group-I II nitride substrate, having a semipolar plane surface, wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of at least Amps per centimeter square (A/cm 2).
The method of claim 15, wherein: the light-emitting device has a light output power that is at least 50 milliwatts, the E)E droop i s less than 1 % at the current density of at least 35 A/cm 2 and less than 10% at the current density of at least 100 A/cm2, and the light emitting device structure has a peak emission at a blue emission wavelength.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the semipolar Group-I II nitride substrate is a semipolar (20-2-1) Gallium Nitride (GaN) substrate.
The method of claim 15, wherein the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL comprises I II -nitride SVG 13493430.02-06-2014.HRCL₉₅Z₀PXXIFW3.CLM.3.svg 0.47 6.45 Black and white
The method claim 15, wherein: the light-emitting device structure includes an n-type I II-nitride superlattice (n-SL) and the n-SL is located below an active region of the light-emitting device, -7- G&C 30794.415-US-U 1 the active region comprises two or more indium containing quantum wells (QWs) with barriers, the quantum wells having a QW number, a QW composition, and a QW thickness, the barriers having a barrier composition, barrier thickness, and barrier doping, the n-S L comprises a number of periods, an S L doping, an S L composition, and layers each having a layer thickness, and the QW number, the QW composition, the QW thickness, the barrier composition, the barrier thickness, the barrier doping, the number of periods, the S L doping, the S L composition, the layer thickness are such that: the 11-nitridel ght itti gdevice stru cture co mprsigai ght emitti ngdide_(LED)device has a peak emission at a blue emission wavelength or longer, and the E Q)E droop is 15 % or less when the LED device is driven at a current density of at least 35 Amps per centimeter square (A/cm2).
(PREVIOUS L Y PRESENTED) The method of claim 15, wherein the light-emitting device structure includes an n-type I II -nitride superlattice (n-S L).
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride light-emitting device structure (LED) on semipolar GaN substrate
Fully packaged semipolar GaN LED with ZnO submount
Materials described outside the worked examples.
(Al,Ga,In)N III-nitride
semipolar GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EQE droop at 35 A/cm2 (claimed, inventive device) | ≤ 15 % | (Al,Ga,In)N III-nitride |
EQE droop at 35 A/cm2 (prior art, background) | 20 % |
Related documents with shared materials, methods, properties, or citations.
n-type III-nitride superlattice (n-SL)
InGaN quantum well
InGaN
p-type III-nitride superlattice (p-SL)
Zinc Oxide submount
ZnO
p-type transparent conductive layer
AlGaN
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
| — |
EQE droop at 35 A/cm2 (claimed refined, claim 2) | ≤ 1 % | — |
EQE droop at 100 A/cm2 (claimed refined, claim 2) | ≤ 10 % | — |
Minimum light output power (claimed, claim 16) | ≥ 50 mW | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 9 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 3 nm | — |
n-type III-nitride superlattice (n-SL)
InGaN quantum well
InGaN
p-type III-nitride superlattice (p-SL)
Zinc Oxide submount
ZnO
p-type transparent conductive layer
AlGaN
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
| — |
EQE droop at 35 A/cm2 (claimed refined, claim 2) | ≤ 1 % | — |
EQE droop at 100 A/cm2 (claimed refined, claim 2) | ≤ 10 % | — |
Minimum light output power (claimed, claim 16) | ≥ 50 mW | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 9 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 3 nm | — |
n-type III-nitride superlattice (n-SL)
InGaN quantum well
InGaN
p-type III-nitride superlattice (p-SL)
Zinc Oxide submount
ZnO
p-type transparent conductive layer
AlGaN
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
| — |
EQE droop at 35 A/cm2 (claimed refined, claim 2) | ≤ 1 % | — |
EQE droop at 100 A/cm2 (claimed refined, claim 2) | ≤ 10 % | — |
Minimum light output power (claimed, claim 16) | ≥ 50 mW | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 9 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 3 nm | — |
n-type III-nitride superlattice (n-SL)
InGaN quantum well
InGaN
p-type III-nitride superlattice (p-SL)
Zinc Oxide submount
ZnO
p-type transparent conductive layer
AlGaN
FIG. 2(a) illustrates a cross-sectional schematic of the epi structure of a low droop {20-2- 1 } LED grown on a semipolar (20-2-1) GaN substrate by Metal …
FIG. 4(b) is 2.0 % (at 100 A/cm2 current density), 7.7% (at 200 A/cm2 current density), 11.5 % (at 3 00 A/cm 2 current density), and 1 7.7 % (at 4 00 A/cm2 …
FIG. 6 is a graph of Output Power in arbitrary units (a.u.) vs. the Number of QWs, showing results for a 3 period QW (3QW) without (w/o) SLs, a 3QW with a 10 …
| — |
EQE droop at 35 A/cm2 (claimed refined, claim 2) | ≤ 1 % | — |
EQE droop at 100 A/cm2 (claimed refined, claim 2) | ≤ 10 % | — |
Minimum light output power (claimed, claim 16) | ≥ 50 mW | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 9 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 3 nm | — |