INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH

James E. MITZLAFF

Patent

Atlas literature

Patent

US 10,103,696

INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH

James E. Mitzlaff

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a simpliﬁed schematic of a known multi-band power ampliﬁer circuit. [00

FIG. 2

FIG. 2 is a simpliﬁed schematic of a multi-band power ampliﬁer circuit in accordance with one embodiment of the invention. [0018]

FIG. 3

FIG. 3 is a simpliﬁed schematic of a multi-band power ampliﬁer circuit in accordance with another embodiment of the invention. [0019]

FIG. 4

FIG. 4 is a simpliﬁed diagram of a ﬁrst integrated circuit package that includes, within the package. a power ampliﬁer on a ﬁrst die, a switch on a second die …

FIG. 5

FIG. 5 is a simpliﬁed diagram of a second integrated circuit packa g e that includes, within the package, a power ampliﬁer on a ﬁrst die, a switch on a second …

FIG. 6

process tool top view

FIG. 6 is a top view of a die that includes a power ampliﬁer, a capacitor and a switch. [0022]

FIG. 7

process tool top view

FIG. 7 is a side view of the capacitor shown the top view of

FIG. 8

FIG. 8 is a simpliﬁed diagram of a third integrated circuit package that includes, within the package, the die of

FIG. 9

process tool top view

FIG. 9 is a top view of a die that includes a power ampliﬁer, an interconnect portion and a switch with two capacitors. [0025]

FIG. 10

apparatus side view

FIG. 10 is a side view of one the two capacitors shown in

FIG. 11

process tool top view

FIG. 11 is a top view of a die that includes a power ampliﬁer, an interconnect portion, a switch with two capacitors. [0027]

FIG. 12

apparatus side view

FIG. 12 is a side view of one the two capacitors shown in

FIG. 13

process tool top view

FIG. 13 is a top view of a die that includes a power ampliﬁer, an interconnect portion, and a switch with two ground terminals. [0029]

FIG. 14

apparatus side view

FIG. 14 is a side view of one of the two ground terminals shown

FIG. 15

FIG. 15 is a simpliﬁed diagram of a fourth integrated circuit package that includes, within the package, the die of

FIG. 16

FIG. 16 is a simpliﬁed diagram of a ﬁfth inte g rated circuit package that includes, within the package, the die of

FIG. 17

FIG. 17 is a simpl i ﬁed diagram of a sixth integrated circuit package that includes, within the package, the die of

FIG. 18

FIG. 18 is a simpliﬁed schematic of a SP₂T switch coupled to a controller. [0034]

FIG. 19

FIG. 19 is simpliﬁed schematic of another SP₂T switch coupled to a controller in accordance with one embodiment of the invention.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 17 dependent

1
IndependentGaNGaN RF power amplifier (PA-FET)multi-band RF switch (GaN)
A circuit, comprising: a radio frequency (hereinafter "RF") power ampliﬁer fabricated using gallium nitride (hereinafter "GaN") technology, the RF power ampliﬁer having an output impedance at its output port; an interconnection portion connected directly to the output port of the RF power ampliﬁer; a multi-band RF switch fabricated using GaN technology, the multi-band RF switch having a common RF port connected directly to the interconnect portion and having a plurality of RF output ports; a plurality of narrowband impedance matching networks, each narrowband impedance matching network having an input port coupled to one RF output port of the multi-band RF switch and having an output port, each narrowband impedance matching network conﬁgured for optimum impedance matching within a narrow RF band; and a plurality of RF ﬁlters, each RF ﬁlter having an input port and an output port, the input port of one RF ﬁlter coupled to the output port of one narrowband impedance matching network, each RF ﬁlter conﬁgured to pass only RF signals within the narrow RF band of the narrowband impedance matching network to which it is coupled, wherein each RF ﬁlter has an input impedance at its input port, wherein each narrowband impedance matching network matches the output impedance of the RF power ampliﬁer with the input impedance of the input port of the RF ﬁlter that is coupled to the narrowband impedance matching network. Original
1. 2
  Dependent← claim 1
  The circuit of claim 1, wherein the interconnection portion consists solely of an electrical conductor with one end of the electrical conductor connected to the output port of the RF power ampliﬁer and another end of the electrical conductor connected to the common RF port of the multi-band RF switch. Original
2. 7
  Dependent← claim 1
  The circuit of claim 1, wherein the interconnection portion consists solely of a capacitor with one end of the capacitor connected to the output port of the RF power ampliﬁer and another end of the capacitor connected to the common RF port of the multi- band RF switch. Original
11
IndependentGaNSiGaN RF power amplifier (PA-FET)multi-band RF switch (GaN)IC package (PA-FET on first Si substrate, switch on second Si substrate, controller on third Si substrate)
An integrated circuit (hereinafter "IC") package, comprising: a ﬁeld-eﬀect transistor disposed on a gallium nitride (hereinafter "GaN") layer over a ﬁrst silicon substrate (hereinafter "PA-FET") housed within the IC package, the PA-FET having a gate terminal, a drain terminal coupled to a direct current (hereinafter "DC") supply voltage for biasing the PA-FET at a positive voltage, and a source terminal coupled to ground potential, the PA-FET having an output impedance at the drain terminal; and a multi-band RF switch disposed on a GaN layer over a second silicon substrate housed within the IC package, the multi-band RF switch including a plurality of Unit HEMT cells, the multi-band RF switch having a common RF port connected directly to the drain te rm inal of the PA-FET without any intervening impedance matching network and having a plurality of RF output ports, wherein a connection between the PA-FET and the multi-band RF switch is totally within the IC package. Original
1. 12
  Dependent← claim 11GaNtwo-dimensional electron gas layerUnit HEMT cell
  The IC package of claim 11, wherein each Unit HEMT cell of the plurality of Unit HEMT cells includes: a two-dimensional electron gas (2DEG) layer disposed on the GaN layer; an insulating layer disposed on the 2DEG layer; a GaN high-electron-mobility transistor (hereinafter "HEMT"), the GaN HEMT having a gate disposed on the insulating layer, a drain adjacent to one side of the gate and a source adjacent to an opposing side of the gate, the GaN HEMT disposed on and including the GaN layer, and the GaN HEMT having its gate connected to one contact of a 2DEG gate bias resistor, the 2DEG gate bias resistor disposed in the 2DEG layer; a HEMT cell gate electrically connected another contact of the 2DEG gate bias resistor; a HEMT cell drain electrically connected to one contact of a 2DEG linearity resistor and to the drain of the GaN HEMT; and a HEMT cell source electrically connected to another contact of the 2DEG linearity resistor and to the source of the GaN HEMT, the 2DEG linearity resistor being disposed in the 2DEG layer. Original
2. 15
  Dependent← claim 11IC package (PA-FET on first Si substrate, switch on second Si substrate, controller on third Si substrate)
  The IC package of claim 11 including a plurality of narrowband impedance matching networks housed within the IC package, each narrowband impedance matching network having an input port coupled to one RF output port of the multi-band RF switch and having an output port, each narrowband impedance matching network conﬁgured for optimum impedance matching within a narrow RF band; and a plurality of RF ﬁlters housed within the IC package, each RF ﬁlter having an input port and an output port, the input port of one RF ﬁlter coupled to the output port of one narrowband impedance matching network, each RF ﬁlter conﬁgured to pass only RF signals within the narrow RF band of the narrowband impedance matching network to which it is coupled, wherein each RF ﬁlter has an input impedance at its input port, wherein each narrowband impedance matching network matches the output impedance of the drain terminal of the PA-FET with the input impedance of the input port of the RF ﬁlter coupled to the narrowband impedance matching network. Original
16
IndependentGaNSiGaN RF power amplifier (PA-FET)multi-band RF switch (GaN)IC package (PA-FET and multi-band RF switch on single silicon substrate)
An integrated circuit (hereinafter "IC") package, comprising: a ﬁeld-eﬀect transistor disposed on a gallium nitride (hereinafter "GaN") layer over a silicon substrate (hereinafter "PA-FET"), the PA-FET having a gate terminal, a drain terminal coupled to a direct current (hereinafter "DC") supply voltage for biasing the PA-FET at a positive voltage, and a source terminal coupled to ground potential, the PA- FET having an output impedance at the drain terminal; and a multiband RF switch including a plurality of Unit HEMT cells, the multi-band RF switch disposed on a GaN layer over the silicon substrate, the multi-band RF switch having a common RF port connected directly to the drain terminal of the PA-FET without any intervening impedance matching network and having a plurality of RF output ports, wherein the silicon substrate is housed within the IC package. Original
1. 17
  Dependent← claim 16GaNtwo-dimensional electron gas layerUnit HEMT cell
  The IC package of claim 16, wherein each Unit HEMT cell of the plurality of Unit HEMT cells, includes: a two-dimensional electron gas (2DEG) layer disposed on the GaN layer; an insulating layer disposed on the 2DEG layer; a GaN high-electron-mobility transistor (hereinafter "HEMT"), the GaN HEMT having a gate disposed on the insulating layer, a drain adjacent to one side of the gate and a source adjacent to an opposing side of the gate, the GaN HEMT disposed on and including the GaN layer, and the GaN HEMT having its gate connected to one contact of a 2DEG gate bias resistor, the 2DEG gate bias resistor disposed in the 2DEG layer; a HEMT cell gate electrically connected to another contact of the 2DEG gate bias resistor; a HEMT cell drain electrically connected to one contact of a 2DEG linearity resistor and to the drain of the GaN HEMT; and a HEMT cell source electrically connected to the other contact of the 2DEG linearity resistor and to the source of the GaN HEMT, the 2DEG linearity resistor being disposed in the 2DEG layer. Original
2. 19
  Dependent← claim 16IC package (PA-FET and multi-band RF switch on single silicon substrate)
  The IC package of claim 16, including at least one metal-insulator-metal (hereinafter "MIM") capacitor disposed on the silicon substrate, the at least one MIM capacitor coupling the multiband RF switch to ground potential. Original
3. 20
  Dependent← claim 16IC package (PA-FET and multi-band RF switch on single silicon substrate)
  The IC package of claim 16, including a controller, fabricated using CMOS technology and disposed on the silicon substrate, wherein the controller is separately coupled to the HEMT cell gate of each Unit HEMT cell of the multi-band RF switch for separately controlling each Unit HEMT cell. Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN RF power amplifier (PA-FET)

GaNactive layer / transistor

Sisubstrate

multi-band RF switch (GaN)

GaNactive layer

Sisubstrate

Unit HEMT cell

two-dimensional electron gas layer2DEG channel / resistor layer

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Semiconductor Layer/Transistor Material For PA-FET And RF Switch

two-dimensional electron gas layer

2DEG Channel Layer In Unit HEMT Cell; Hosts Gate Bias Resistor And Linearity Resistor

Why these are connected

Related documents with shared materials, methods, properties, or citations.

INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH | Matter42 Literature