Patent
US 9,331,151METHOD FOR COUPLING A GRAPHENE LAYER AND A SUBSTRATE AND DEVICE COMPRISING THE GRAPHENE/SUBSTRATE STRUCTURE OBTAINED
Sebastiano Ravesi
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,331,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a micrograph of a graphene-substrate structure obtained with the SC- 1/oxygen plasma method according to the known art;
Figure 2 illustrates a micrograph of a graphene-substrate structure obtained with a method according to one embodiment of the disclosure; 10
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 8 is a schematic representation of an electronic device built according to one embodiment of the disclosure; 25
Figure 9 shows the top plan view of the TLM (transmission line model) structure illustrated in
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
Figure 11 illustrates (a) the diagram of a chip comprising six identical TLM structures (three oriented vertically (A v, Bv, C v) and three oriented horizontally (A o, 5 B o, Co)) provided on an area of the sample of (2.6x1.3)mm2, and (b) the plots of the resistance R as a function of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a substrate having at least one hydrophilic surface that includes hydroxyl and silanolic groups, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 1, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 1, wherein the substrate includes silicon oxide.
The device according to claim 1, wherein the substrate is made of silicon oxide or passivized silicon.
The device according to claim 1, wherein the elements or functional groups include alkyl groups. 2 Application No. 14/788,159 Reply to Office Action dated
The device according to claim 1, wherein the elements or functional groups include ketone compounds.
The device according to claim 1, wherein the elements or functional groups include carbonyl groups.
The device according to claim 1, wherein the element or functional groups are from a mixture is a combination of methylethyl ketone and ethyl lactate.
The device according to claim 1, wherein a sheet resistance of the graphene layer is about 0.9 kilo-ohms per square.
canceled
canceled
canceled
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups including alkyl groups.
The device according to claim 21, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 21, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, 4 Application No. 14/788,159 Reply to Office Action dated a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include ketone compounds.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include carbonyl groups.
The device according to claim 27, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 27, wherein the substrate includes silicon oxide.
An electronic device comprising: 5 Application No. 14/788,159 Reply to Office Action dated a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a mixture of methylethyl ketone and ethyl lactate, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 30, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 30, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer having a sheet resistance of about 0.9 kilo-ohms per square, and elements or functional groups from a solvent selected from the isopropyl alcohol, methylethyl ketone, and mixtures said graphene layer and integrated with the hydrophilic surface of about 40 degrees.
The device according to claim 33, wherein the memory, a photodetector, an N H 3 and N O 2
The device according to claim 33, wherein the group consisting of acetone, ethyl lactate, thereof, located between said substrate and hydrophilic surface to obtain a contact angle of the device is one of a transistor, a non-volatile sensor. substrate includes silicon oxide. 6
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Creation of a substrate-graphene interface. CVD graphene grown on copper was transferred onto a SiO₂ substrate pre-treated with a mixture of ethyl lactate and methylethyl ketone (60:40) by dipping, followed by rinsing with H₂O and drying. The transferred graphene was compared against a standard SC-1 and oxygen plasma pre-treatment. Raman spectra confirmed graphene transfer in both cases. Sheet resistance measurements by four-point probe showed the new pre-treatment reduced sheet resistance approximately by a factor of three relative to the standard procedure.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate electronic device (TLM structure/transistor/non-volatile memory/photodetector/NH₃ and NO₂ sensor)
Materials described outside the worked examples.
solvent (acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, or mixtures)
hydrophilic substrate with hydroxyl and silanolic groups
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene layer (claimed value) | 0.9 | graphene |
water contact angle of hydrophilic surface after solvent treatment |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,331,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a micrograph of a graphene-substrate structure obtained with the SC- 1/oxygen plasma method according to the known art;
Figure 2 illustrates a micrograph of a graphene-substrate structure obtained with a method according to one embodiment of the disclosure; 10
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 8 is a schematic representation of an electronic device built according to one embodiment of the disclosure; 25
Figure 9 shows the top plan view of the TLM (transmission line model) structure illustrated in
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
Figure 11 illustrates (a) the diagram of a chip comprising six identical TLM structures (three oriented vertically (A v, Bv, C v) and three oriented horizontally (A o, 5 B o, Co)) provided on an area of the sample of (2.6x1.3)mm2, and (b) the plots of the resistance R as a function of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a substrate having at least one hydrophilic surface that includes hydroxyl and silanolic groups, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 1, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 1, wherein the substrate includes silicon oxide.
The device according to claim 1, wherein the substrate is made of silicon oxide or passivized silicon.
The device according to claim 1, wherein the elements or functional groups include alkyl groups. 2 Application No. 14/788,159 Reply to Office Action dated
The device according to claim 1, wherein the elements or functional groups include ketone compounds.
The device according to claim 1, wherein the elements or functional groups include carbonyl groups.
The device according to claim 1, wherein the element or functional groups are from a mixture is a combination of methylethyl ketone and ethyl lactate.
The device according to claim 1, wherein a sheet resistance of the graphene layer is about 0.9 kilo-ohms per square.
canceled
canceled
canceled
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups including alkyl groups.
The device according to claim 21, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 21, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, 4 Application No. 14/788,159 Reply to Office Action dated a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include ketone compounds.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include carbonyl groups.
The device according to claim 27, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 27, wherein the substrate includes silicon oxide.
An electronic device comprising: 5 Application No. 14/788,159 Reply to Office Action dated a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a mixture of methylethyl ketone and ethyl lactate, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 30, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 30, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer having a sheet resistance of about 0.9 kilo-ohms per square, and elements or functional groups from a solvent selected from the isopropyl alcohol, methylethyl ketone, and mixtures said graphene layer and integrated with the hydrophilic surface of about 40 degrees.
The device according to claim 33, wherein the memory, a photodetector, an N H 3 and N O 2
The device according to claim 33, wherein the group consisting of acetone, ethyl lactate, thereof, located between said substrate and hydrophilic surface to obtain a contact angle of the device is one of a transistor, a non-volatile sensor. substrate includes silicon oxide. 6
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Creation of a substrate-graphene interface. CVD graphene grown on copper was transferred onto a SiO₂ substrate pre-treated with a mixture of ethyl lactate and methylethyl ketone (60:40) by dipping, followed by rinsing with H₂O and drying. The transferred graphene was compared against a standard SC-1 and oxygen plasma pre-treatment. Raman spectra confirmed graphene transfer in both cases. Sheet resistance measurements by four-point probe showed the new pre-treatment reduced sheet resistance approximately by a factor of three relative to the standard procedure.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate electronic device (TLM structure/transistor/non-volatile memory/photodetector/NH₃ and NO₂ sensor)
Materials described outside the worked examples.
solvent (acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, or mixtures)
hydrophilic substrate with hydroxyl and silanolic groups
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene layer (claimed value) | 0.9 | graphene |
water contact angle of hydrophilic surface after solvent treatment |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,331,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a micrograph of a graphene-substrate structure obtained with the SC- 1/oxygen plasma method according to the known art;
Figure 2 illustrates a micrograph of a graphene-substrate structure obtained with a method according to one embodiment of the disclosure; 10
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 8 is a schematic representation of an electronic device built according to one embodiment of the disclosure; 25
Figure 9 shows the top plan view of the TLM (transmission line model) structure illustrated in
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
Figure 11 illustrates (a) the diagram of a chip comprising six identical TLM structures (three oriented vertically (A v, Bv, C v) and three oriented horizontally (A o, 5 B o, Co)) provided on an area of the sample of (2.6x1.3)mm2, and (b) the plots of the resistance R as a function of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a substrate having at least one hydrophilic surface that includes hydroxyl and silanolic groups, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 1, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 1, wherein the substrate includes silicon oxide.
The device according to claim 1, wherein the substrate is made of silicon oxide or passivized silicon.
The device according to claim 1, wherein the elements or functional groups include alkyl groups. 2 Application No. 14/788,159 Reply to Office Action dated
The device according to claim 1, wherein the elements or functional groups include ketone compounds.
The device according to claim 1, wherein the elements or functional groups include carbonyl groups.
The device according to claim 1, wherein the element or functional groups are from a mixture is a combination of methylethyl ketone and ethyl lactate.
The device according to claim 1, wherein a sheet resistance of the graphene layer is about 0.9 kilo-ohms per square.
canceled
canceled
canceled
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups including alkyl groups.
The device according to claim 21, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 21, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, 4 Application No. 14/788,159 Reply to Office Action dated a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include ketone compounds.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include carbonyl groups.
The device according to claim 27, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 27, wherein the substrate includes silicon oxide.
An electronic device comprising: 5 Application No. 14/788,159 Reply to Office Action dated a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a mixture of methylethyl ketone and ethyl lactate, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 30, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 30, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer having a sheet resistance of about 0.9 kilo-ohms per square, and elements or functional groups from a solvent selected from the isopropyl alcohol, methylethyl ketone, and mixtures said graphene layer and integrated with the hydrophilic surface of about 40 degrees.
The device according to claim 33, wherein the memory, a photodetector, an N H 3 and N O 2
The device according to claim 33, wherein the group consisting of acetone, ethyl lactate, thereof, located between said substrate and hydrophilic surface to obtain a contact angle of the device is one of a transistor, a non-volatile sensor. substrate includes silicon oxide. 6
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Creation of a substrate-graphene interface. CVD graphene grown on copper was transferred onto a SiO₂ substrate pre-treated with a mixture of ethyl lactate and methylethyl ketone (60:40) by dipping, followed by rinsing with H₂O and drying. The transferred graphene was compared against a standard SC-1 and oxygen plasma pre-treatment. Raman spectra confirmed graphene transfer in both cases. Sheet resistance measurements by four-point probe showed the new pre-treatment reduced sheet resistance approximately by a factor of three relative to the standard procedure.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate electronic device (TLM structure/transistor/non-volatile memory/photodetector/NH₃ and NO₂ sensor)
Materials described outside the worked examples.
solvent (acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, or mixtures)
hydrophilic substrate with hydroxyl and silanolic groups
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene layer (claimed value) | 0.9 | graphene |
water contact angle of hydrophilic surface after solvent treatment |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,331,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a micrograph of a graphene-substrate structure obtained with the SC- 1/oxygen plasma method according to the known art;
Figure 2 illustrates a micrograph of a graphene-substrate structure obtained with a method according to one embodiment of the disclosure; 10
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 8 is a schematic representation of an electronic device built according to one embodiment of the disclosure; 25
Figure 9 shows the top plan view of the TLM (transmission line model) structure illustrated in
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
Figure 11 illustrates (a) the diagram of a chip comprising six identical TLM structures (three oriented vertically (A v, Bv, C v) and three oriented horizontally (A o, 5 B o, Co)) provided on an area of the sample of (2.6x1.3)mm2, and (b) the plots of the resistance R as a function of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a substrate having at least one hydrophilic surface that includes hydroxyl and silanolic groups, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 1, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 1, wherein the substrate includes silicon oxide.
The device according to claim 1, wherein the substrate is made of silicon oxide or passivized silicon.
The device according to claim 1, wherein the elements or functional groups include alkyl groups. 2 Application No. 14/788,159 Reply to Office Action dated
The device according to claim 1, wherein the elements or functional groups include ketone compounds.
The device according to claim 1, wherein the elements or functional groups include carbonyl groups.
The device according to claim 1, wherein the element or functional groups are from a mixture is a combination of methylethyl ketone and ethyl lactate.
The device according to claim 1, wherein a sheet resistance of the graphene layer is about 0.9 kilo-ohms per square.
canceled
canceled
canceled
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups including alkyl groups.
The device according to claim 21, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and NO 2 sensor.
The device according to claim 21, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, 4 Application No. 14/788,159 Reply to Office Action dated a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include ketone compounds.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from the group consisting of acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures thereof, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees, the elements or functional groups include carbonyl groups.
The device according to claim 27, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 27, wherein the substrate includes silicon oxide.
An electronic device comprising: 5 Application No. 14/788,159 Reply to Office Action dated a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a mixture of methylethyl ketone and ethyl lactate, located between said substrate and said graphene layer and integrated with the hydrophilic surface to obtain a contact angle of the hydrophilic surface of about 40 degrees.
The device according to claim 30, wherein the device is one of a transistor, a non-volatile memory, a photodetector, an N H 3 and N O 2 sensor.
The device according to claim 30, wherein the substrate includes silicon oxide.
An electronic device comprising: a substrate having at least one hydrophilic surface, a graphene layer having a sheet resistance of about 0.9 kilo-ohms per square, and elements or functional groups from a solvent selected from the isopropyl alcohol, methylethyl ketone, and mixtures said graphene layer and integrated with the hydrophilic surface of about 40 degrees.
The device according to claim 33, wherein the memory, a photodetector, an N H 3 and N O 2
The device according to claim 33, wherein the group consisting of acetone, ethyl lactate, thereof, located between said substrate and hydrophilic surface to obtain a contact angle of the device is one of a transistor, a non-volatile sensor. substrate includes silicon oxide. 6
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Creation of a substrate-graphene interface. CVD graphene grown on copper was transferred onto a SiO₂ substrate pre-treated with a mixture of ethyl lactate and methylethyl ketone (60:40) by dipping, followed by rinsing with H₂O and drying. The transferred graphene was compared against a standard SC-1 and oxygen plasma pre-treatment. Raman spectra confirmed graphene transfer in both cases. Sheet resistance measurements by four-point probe showed the new pre-treatment reduced sheet resistance approximately by a factor of three relative to the standard procedure.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate electronic device (TLM structure/transistor/non-volatile memory/photodetector/NH₃ and NO₂ sensor)
Materials described outside the worked examples.
solvent (acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, or mixtures)
hydrophilic substrate with hydroxyl and silanolic groups
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated with a method according to one embodiment of the disclosure and coupled to a graphene layer;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene layer (claimed value) | 0.9 | graphene |
water contact angle of hydrophilic surface after solvent treatment |
Related documents with shared materials, methods, properties, or citations.
CVD graphene on copper
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
| 40 |
SiO₂ |
Temperature | 20–45 °C | — |
Voltage | 40–40 V | — |
Temperature | 1.5–1.9 k | — |
CVD graphene on copper
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
| 40 |
SiO₂ |
Temperature | 20–45 °C | — |
Voltage | 40–40 V | — |
Temperature | 1.5–1.9 k | — |
CVD graphene on copper
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
| 40 |
SiO₂ |
Temperature | 20–45 °C | — |
Voltage | 40–40 V | — |
Temperature | 1.5–1.9 k | — |
CVD graphene on copper
Figure 4 illustrates the Raman spectrum of a silicon-oxide substrate pre- treated in SC- 1 and oxygen plasma and coupled to a graphene layer; 15
Figure 5 illustrates a) a micrograph of a graphene layer grown by CVD, and b) the Raman spectrum of the graphene grown by CVD;
Figure 6 illustrates two Raman spectra of the graphene transferred onto a silicon-oxide substrate immediately after the treatment according to the disclosure (GR₂ 1) and after four weeks (GR₂₂); 20
Figure 7 illustrates I-V characteristics measured on CVD graphene transferred onto SiO 2 treated by means of the SC- 1 + oxygen plasma procedure and using the method according to the disclosure;
Figure 10 illustrates (a) the resistance measured between pairs of adjacent contacts in a TLM structure as a function of the distance between the contacts for backgate 8 voltages ranging from-40 to 40 V, (b) the plot of the sheet resistance as a function of Vg and (c) the conductance G= 1/R sh as a …
| 40 |
SiO₂ |
Temperature | 20–45 °C | — |
Voltage | 40–40 V | — |
Temperature | 1.5–1.9 k | — |