Patent
US 10,600,977NANOPATCH GRAPHENE COMPOSITE AND METHOD OF MANUFACTURING THE SAME
Kilwon CHO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,600,977Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows the structure of a flexible organic transistor including the nanopatch graphene composite. Below is a description of the nanopatch graphene …
FIG. 2. Specifically, graphene including a defect is provided (step a). Next, the graphene is oxidized to bond a functional group containing an oxygen atom onto …
FIG. 3 shows the AFM (Atomic Force Microscopy) images of Example 1-1 and Comparative Example 1, and AFM analysis was performed using a Veeco NanoScope 8. With …
FIG. 4A shows a STEM image using an energy dispersive spectrometer (EDS) of the nanopatch graphene composite of Example 1- 1,
FIG. 5 shows the results of analysis of UV-vis spectra of Example 1-1 and Comparative Example 1, and the analysis of UV-vis spectra was performed using a C …
FIGS. 6 A and 6 B, the average hole mobility values of Comparative Device Example 1 and Device Example 1 were measured to be 8,490 and 9,240 cm 2 y- 1 s- 1, …
FIG. 7B, the fracture load of the nanopatch graphene composite of Example 1-1 was 60o% higher than that of the graphene of Comparative Example 1. Thereby, the …
FIGS. 8A, 8B and 8C, the drain current value and the current on/off ratio were higher in Device Examples 2 to 4 than in Comparative Device Examples 2 to 4. The …
FIG. 9, the organic semiconductor was subjected to vertical alignment relative to the substrate in Device Examples 2 and 3, and to planar alignment relative to …
FIG. 10 is a schematic view showing the measurement of resistance of the nanopatch graphene composites of Examples 1- 1 and 1-2. As shown in
FIGS. 11 A and 11 B, the pristine graphene thin film manufactured in Comparative Example 1 was drastically increased (30 50%) in electrical resistance after 10 …
FIGS. 12A and 12B, the pristine graphene thin film manufactured in Comparative Example 1 exhibited a drastic resistance increase from 3 % stretching under …
FIGS. 13A and 13B, the flexible strain sensor of Device Example 5 is able to adequately convert changes in strain depending on the movement of the finger and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopatch graphene composite, comprising: a graphene including a defect; and a nanopatch disposed on the defect, wherein the defect is at least one selected from the group consisting of a grain boundary, a dot defect, a line defect, cracking, folding, and wrinkling, and the nanopatch includes a self-assembled monolayer (SAM). Currently amended
The nanopatch graphene composite of claim 1 3, wherein the self- assembled monolayer is formed by self-assembling, on the defect, a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.1.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Currently amended
The nanopatch graphene composite of claim 1, wherein the nanopatch suppresses or delays fracture of the graphene growing on the defect upon transforming the graphene. Original
The nanopatch graphene composite of claim 1, wherein the graphene is at least one selected from the group consisting of single-layer graphene, double-layer graphene and multilayer graphene. Original
An organic transistor, comprising: a flexible substrate; a semiconductor layer on the flexible substrate; and a gate electrode, a source electrode and a drain electrode, wherein at least one selected from the group consisting of the gate electrode, the source electrode and the drain electrode includes the nanopatch graphene composite of claim 1. Original
A flexible strain sensor, comprising: a flexible substrate; an active layer formed on the flexible substrate and including the nanopatch graphene composite of claim 1; and an electrode electrically connected to the active layer. Original
Canceled
Canceled
A method of manufacturing a nanopatch graphene composite, comprising: (a) providing graphene including a defect; (b) oxidizing the graphene to form a functional group containing an oxygen atom on the defect, thus obtaining surface-modified graphene; and (c) bonding a self-assembled monolayer to the functional group, thus obtaining the nanopatch graphene composite. Original
The method of claim 11, wherein, in step (c), the self-assembled monolayer is formed by self-assembling a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.2.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Original
The method of claim 11, wherein the oxidizing is selectively carried out on the defect of the graphene. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Preparation of nanopatch graphene composite using OTS self-assembled monolayer selectively deposited on defects of graphene via UV/ozone oxidation, characterized by AFM, STEM-EDS, SAED, and GIXD.
Layer stacks claimed or described, ordered top of device to substrate.
nanopatch graphene composite
flexible organic transistor
Materials described outside the worked examples.
nanopatch
self-assembled monolayer (SAM)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–25 nm | — |
Thickness |
Table 1
of the organic transistors of Device Examples 2 to 4 and Comparative Device Examples 2 to 4 are summarized in Table 1 below.
p. 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,600,977Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows the structure of a flexible organic transistor including the nanopatch graphene composite. Below is a description of the nanopatch graphene …
FIG. 2. Specifically, graphene including a defect is provided (step a). Next, the graphene is oxidized to bond a functional group containing an oxygen atom onto …
FIG. 3 shows the AFM (Atomic Force Microscopy) images of Example 1-1 and Comparative Example 1, and AFM analysis was performed using a Veeco NanoScope 8. With …
FIG. 4A shows a STEM image using an energy dispersive spectrometer (EDS) of the nanopatch graphene composite of Example 1- 1,
FIG. 5 shows the results of analysis of UV-vis spectra of Example 1-1 and Comparative Example 1, and the analysis of UV-vis spectra was performed using a C …
FIGS. 6 A and 6 B, the average hole mobility values of Comparative Device Example 1 and Device Example 1 were measured to be 8,490 and 9,240 cm 2 y- 1 s- 1, …
FIG. 7B, the fracture load of the nanopatch graphene composite of Example 1-1 was 60o% higher than that of the graphene of Comparative Example 1. Thereby, the …
FIGS. 8A, 8B and 8C, the drain current value and the current on/off ratio were higher in Device Examples 2 to 4 than in Comparative Device Examples 2 to 4. The …
FIG. 9, the organic semiconductor was subjected to vertical alignment relative to the substrate in Device Examples 2 and 3, and to planar alignment relative to …
FIG. 10 is a schematic view showing the measurement of resistance of the nanopatch graphene composites of Examples 1- 1 and 1-2. As shown in
FIGS. 11 A and 11 B, the pristine graphene thin film manufactured in Comparative Example 1 was drastically increased (30 50%) in electrical resistance after 10 …
FIGS. 12A and 12B, the pristine graphene thin film manufactured in Comparative Example 1 exhibited a drastic resistance increase from 3 % stretching under …
FIGS. 13A and 13B, the flexible strain sensor of Device Example 5 is able to adequately convert changes in strain depending on the movement of the finger and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopatch graphene composite, comprising: a graphene including a defect; and a nanopatch disposed on the defect, wherein the defect is at least one selected from the group consisting of a grain boundary, a dot defect, a line defect, cracking, folding, and wrinkling, and the nanopatch includes a self-assembled monolayer (SAM). Currently amended
The nanopatch graphene composite of claim 1 3, wherein the self- assembled monolayer is formed by self-assembling, on the defect, a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.1.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Currently amended
The nanopatch graphene composite of claim 1, wherein the nanopatch suppresses or delays fracture of the graphene growing on the defect upon transforming the graphene. Original
The nanopatch graphene composite of claim 1, wherein the graphene is at least one selected from the group consisting of single-layer graphene, double-layer graphene and multilayer graphene. Original
An organic transistor, comprising: a flexible substrate; a semiconductor layer on the flexible substrate; and a gate electrode, a source electrode and a drain electrode, wherein at least one selected from the group consisting of the gate electrode, the source electrode and the drain electrode includes the nanopatch graphene composite of claim 1. Original
A flexible strain sensor, comprising: a flexible substrate; an active layer formed on the flexible substrate and including the nanopatch graphene composite of claim 1; and an electrode electrically connected to the active layer. Original
Canceled
Canceled
A method of manufacturing a nanopatch graphene composite, comprising: (a) providing graphene including a defect; (b) oxidizing the graphene to form a functional group containing an oxygen atom on the defect, thus obtaining surface-modified graphene; and (c) bonding a self-assembled monolayer to the functional group, thus obtaining the nanopatch graphene composite. Original
The method of claim 11, wherein, in step (c), the self-assembled monolayer is formed by self-assembling a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.2.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Original
The method of claim 11, wherein the oxidizing is selectively carried out on the defect of the graphene. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Preparation of nanopatch graphene composite using OTS self-assembled monolayer selectively deposited on defects of graphene via UV/ozone oxidation, characterized by AFM, STEM-EDS, SAED, and GIXD.
Layer stacks claimed or described, ordered top of device to substrate.
nanopatch graphene composite
flexible organic transistor
Materials described outside the worked examples.
nanopatch
self-assembled monolayer (SAM)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–25 nm | — |
Thickness |
Table 1
of the organic transistors of Device Examples 2 to 4 and Comparative Device Examples 2 to 4 are summarized in Table 1 below.
p. 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,600,977Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows the structure of a flexible organic transistor including the nanopatch graphene composite. Below is a description of the nanopatch graphene …
FIG. 2. Specifically, graphene including a defect is provided (step a). Next, the graphene is oxidized to bond a functional group containing an oxygen atom onto …
FIG. 3 shows the AFM (Atomic Force Microscopy) images of Example 1-1 and Comparative Example 1, and AFM analysis was performed using a Veeco NanoScope 8. With …
FIG. 4A shows a STEM image using an energy dispersive spectrometer (EDS) of the nanopatch graphene composite of Example 1- 1,
FIG. 5 shows the results of analysis of UV-vis spectra of Example 1-1 and Comparative Example 1, and the analysis of UV-vis spectra was performed using a C …
FIGS. 6 A and 6 B, the average hole mobility values of Comparative Device Example 1 and Device Example 1 were measured to be 8,490 and 9,240 cm 2 y- 1 s- 1, …
FIG. 7B, the fracture load of the nanopatch graphene composite of Example 1-1 was 60o% higher than that of the graphene of Comparative Example 1. Thereby, the …
FIGS. 8A, 8B and 8C, the drain current value and the current on/off ratio were higher in Device Examples 2 to 4 than in Comparative Device Examples 2 to 4. The …
FIG. 9, the organic semiconductor was subjected to vertical alignment relative to the substrate in Device Examples 2 and 3, and to planar alignment relative to …
FIG. 10 is a schematic view showing the measurement of resistance of the nanopatch graphene composites of Examples 1- 1 and 1-2. As shown in
FIGS. 11 A and 11 B, the pristine graphene thin film manufactured in Comparative Example 1 was drastically increased (30 50%) in electrical resistance after 10 …
FIGS. 12A and 12B, the pristine graphene thin film manufactured in Comparative Example 1 exhibited a drastic resistance increase from 3 % stretching under …
FIGS. 13A and 13B, the flexible strain sensor of Device Example 5 is able to adequately convert changes in strain depending on the movement of the finger and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopatch graphene composite, comprising: a graphene including a defect; and a nanopatch disposed on the defect, wherein the defect is at least one selected from the group consisting of a grain boundary, a dot defect, a line defect, cracking, folding, and wrinkling, and the nanopatch includes a self-assembled monolayer (SAM). Currently amended
The nanopatch graphene composite of claim 1 3, wherein the self- assembled monolayer is formed by self-assembling, on the defect, a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.1.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Currently amended
The nanopatch graphene composite of claim 1, wherein the nanopatch suppresses or delays fracture of the graphene growing on the defect upon transforming the graphene. Original
The nanopatch graphene composite of claim 1, wherein the graphene is at least one selected from the group consisting of single-layer graphene, double-layer graphene and multilayer graphene. Original
An organic transistor, comprising: a flexible substrate; a semiconductor layer on the flexible substrate; and a gate electrode, a source electrode and a drain electrode, wherein at least one selected from the group consisting of the gate electrode, the source electrode and the drain electrode includes the nanopatch graphene composite of claim 1. Original
A flexible strain sensor, comprising: a flexible substrate; an active layer formed on the flexible substrate and including the nanopatch graphene composite of claim 1; and an electrode electrically connected to the active layer. Original
Canceled
Canceled
A method of manufacturing a nanopatch graphene composite, comprising: (a) providing graphene including a defect; (b) oxidizing the graphene to form a functional group containing an oxygen atom on the defect, thus obtaining surface-modified graphene; and (c) bonding a self-assembled monolayer to the functional group, thus obtaining the nanopatch graphene composite. Original
The method of claim 11, wherein, in step (c), the self-assembled monolayer is formed by self-assembling a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.2.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Original
The method of claim 11, wherein the oxidizing is selectively carried out on the defect of the graphene. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Preparation of nanopatch graphene composite using OTS self-assembled monolayer selectively deposited on defects of graphene via UV/ozone oxidation, characterized by AFM, STEM-EDS, SAED, and GIXD.
Layer stacks claimed or described, ordered top of device to substrate.
nanopatch graphene composite
flexible organic transistor
Materials described outside the worked examples.
nanopatch
self-assembled monolayer (SAM)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–25 nm | — |
Thickness |
Table 1
of the organic transistors of Device Examples 2 to 4 and Comparative Device Examples 2 to 4 are summarized in Table 1 below.
p. 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,600,977Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows the structure of a flexible organic transistor including the nanopatch graphene composite. Below is a description of the nanopatch graphene …
FIG. 2. Specifically, graphene including a defect is provided (step a). Next, the graphene is oxidized to bond a functional group containing an oxygen atom onto …
FIG. 3 shows the AFM (Atomic Force Microscopy) images of Example 1-1 and Comparative Example 1, and AFM analysis was performed using a Veeco NanoScope 8. With …
FIG. 4A shows a STEM image using an energy dispersive spectrometer (EDS) of the nanopatch graphene composite of Example 1- 1,
FIG. 5 shows the results of analysis of UV-vis spectra of Example 1-1 and Comparative Example 1, and the analysis of UV-vis spectra was performed using a C …
FIGS. 6 A and 6 B, the average hole mobility values of Comparative Device Example 1 and Device Example 1 were measured to be 8,490 and 9,240 cm 2 y- 1 s- 1, …
FIG. 7B, the fracture load of the nanopatch graphene composite of Example 1-1 was 60o% higher than that of the graphene of Comparative Example 1. Thereby, the …
FIGS. 8A, 8B and 8C, the drain current value and the current on/off ratio were higher in Device Examples 2 to 4 than in Comparative Device Examples 2 to 4. The …
FIG. 9, the organic semiconductor was subjected to vertical alignment relative to the substrate in Device Examples 2 and 3, and to planar alignment relative to …
FIG. 10 is a schematic view showing the measurement of resistance of the nanopatch graphene composites of Examples 1- 1 and 1-2. As shown in
FIGS. 11 A and 11 B, the pristine graphene thin film manufactured in Comparative Example 1 was drastically increased (30 50%) in electrical resistance after 10 …
FIGS. 12A and 12B, the pristine graphene thin film manufactured in Comparative Example 1 exhibited a drastic resistance increase from 3 % stretching under …
FIGS. 13A and 13B, the flexible strain sensor of Device Example 5 is able to adequately convert changes in strain depending on the movement of the finger and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopatch graphene composite, comprising: a graphene including a defect; and a nanopatch disposed on the defect, wherein the defect is at least one selected from the group consisting of a grain boundary, a dot defect, a line defect, cracking, folding, and wrinkling, and the nanopatch includes a self-assembled monolayer (SAM). Currently amended
The nanopatch graphene composite of claim 1 3, wherein the self- assembled monolayer is formed by self-assembling, on the defect, a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.1.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Currently amended
The nanopatch graphene composite of claim 1, wherein the nanopatch suppresses or delays fracture of the graphene growing on the defect upon transforming the graphene. Original
The nanopatch graphene composite of claim 1, wherein the graphene is at least one selected from the group consisting of single-layer graphene, double-layer graphene and multilayer graphene. Original
An organic transistor, comprising: a flexible substrate; a semiconductor layer on the flexible substrate; and a gate electrode, a source electrode and a drain electrode, wherein at least one selected from the group consisting of the gate electrode, the source electrode and the drain electrode includes the nanopatch graphene composite of claim 1. Original
A flexible strain sensor, comprising: a flexible substrate; an active layer formed on the flexible substrate and including the nanopatch graphene composite of claim 1; and an electrode electrically connected to the active layer. Original
Canceled
Canceled
A method of manufacturing a nanopatch graphene composite, comprising: (a) providing graphene including a defect; (b) oxidizing the graphene to form a functional group containing an oxygen atom on the defect, thus obtaining surface-modified graphene; and (c) bonding a self-assembled monolayer to the functional group, thus obtaining the nanopatch graphene composite. Original
The method of claim 11, wherein, in step (c), the self-assembled monolayer is formed by self-assembling a compound represented by Chemical Formula 1 below: [Chemical Formula 1] SVG 15833090.11-21-2019.K₃₉H₄GVBRXEAPX5.CLM.2.svg 1.3 1.39 Black and white in Chemical Formula 1, Ri is a C₃ to C₃₀ alkyl group, R 2 and R 3, which are identical to or different from each other, are independently a hydrogen atom or a C 1 to C₆ alkyl group, and R 4 is a C 1 to C₆ alkyl group. Original
The method of claim 11, wherein the oxidizing is selectively carried out on the defect of the graphene. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Preparation of nanopatch graphene composite using OTS self-assembled monolayer selectively deposited on defects of graphene via UV/ozone oxidation, characterized by AFM, STEM-EDS, SAED, and GIXD.
Layer stacks claimed or described, ordered top of device to substrate.
nanopatch graphene composite
flexible organic transistor
Materials described outside the worked examples.
nanopatch
self-assembled monolayer (SAM)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–25 nm | — |
Thickness |
Table 1
of the organic transistors of Device Examples 2 to 4 and Comparative Device Examples 2 to 4 are summarized in Table 1 below.
p. 16
Related documents with shared materials, methods, properties, or citations.
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