Patent
US 9,714,988Hall Effect Sensor With Graphene Detection Layer
Markus Eckinger
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,714,988Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
FIG. 2E, the method may further include structuring the metal layer 208 to form the contact pads 214. In some embodiments, the contact pads 214 may be formed …
FIG. 3C is depicted as p-type. [0056] According to various embodiments, the contact pads 310 may be composed of and or may include various metals, e.g. copper, …
FIG. 4, may be constructed and/or embodied by following the steps and elements illustrated in
FIGS. 5A-5C. The Hall Effect sensor, as illustrated in
FIGS. 6A & 6B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 7A & 7B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 8A-8D, may further include a ring structure 810 (shown in cross-section) formed on a surface of the metal layer 806. In various embodiments, the Hall …
FIGS. 9A & 9B may be implemented as a s o-called " 3 -D" Hall Effect sensor. [0085] In various embodiments, the recess 908 may be formed in the epitaxy layer …
FIGS. 10 A-1O C may be implemented as a s o-called " 3 -D" Hall Effect sensor and may include a substrate 1002, an epitaxy layer 1004, several contact pads 1006 …
FIGS. 11A-11C. The Hall Effect sensor depicted in FIGS.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a substrate having a first side; an epitaxy layer formed on said first side; a three-dimensional recess formed in the epitaxy layer; a seed layer formed on said first side; a graphene layer formed over at least a part of the seed layer; wherein at least a portion of the seed layer between the substrate and said graphene layer is removed without separating the substrate to form a suspended graphene structure from said graphene layer, a support structure formed over a portion of the graphene layer; and an encapsulation structure formed over a portion of the support structure; wherein the encapsulation structure, the support structure, and the graphene layer encloses a volume.
The structure of claim 1, wherein the volume is capable of sustaining a low-pressure environment.
The structure of claim 1, wherein the encapsulation structure completely fills said volume.
The structure of claim 1, said encapsulation layer comprises borophosphosilicate glass.
The structure of claim 1, wherein said encapsulation layer comprises high-density polyethylene.
canceled
A method for producing a ha l l sensor, comprising: providing a substrate having a first side; forming an epitaxy layer on said first side; forming a three-dimensional recess in the epitaxy layer; forming a seed layer on said first side after forming the three-dimensional recess; forming a graphene layer over at least a part of the seed layer without contacting the substrate; and removing a portion of the seed layer between the substrate and said graphene layer.
The method of claim 7 further comprising patterning the graphene layer.
The method of claim 7 wherein said portion of the seed layer is removed by etching.
The method of claim 7 wherein the seed layer comprises a metal layer.
The method of claim 7 further comprising: forming an encapsulation layer over or around at least a portion of the graphene layer.
canceled
canceled
The method of claim [[11]] 7 wherein the three-dimensional recess is formed on the (1,1,1) lattice plane.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially pyramid shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially octagon shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially cube shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially quatrefoil shaped.
A hall sensor, comprising: a substrate having a first side; a seed layer formed on said first side, the seed layer comprising at least a first portion, a second portion and a third portion, each of the first, second and third portions of the seed layer being separated from respective other portions of the seed layer; and a graphene layer formed above the first, second and third portions of the seed layer and in contact with the first, second and third portions of the seed layer; wherein a further portion of the seed layer is removed between the substrate and said graphene layer to form a suspended graphene structure.
The hall sensor of claim 25, wherein at least one wire is connected to each portion of the seed layer.
The ha l l sensor of claim 25, wherein a between the graphene layer and at least one of the stress-reducing mounting structure is arranged portions of the seed layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene structure with encapsulated volume
Materials described outside the worked examples.
graphene
epitaxy layer
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Nanotube and graphene differential displacement sensors
Patent
Atlas literature
Patent
US 9,714,988Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
FIG. 2E, the method may further include structuring the metal layer 208 to form the contact pads 214. In some embodiments, the contact pads 214 may be formed …
FIG. 3C is depicted as p-type. [0056] According to various embodiments, the contact pads 310 may be composed of and or may include various metals, e.g. copper, …
FIG. 4, may be constructed and/or embodied by following the steps and elements illustrated in
FIGS. 5A-5C. The Hall Effect sensor, as illustrated in
FIGS. 6A & 6B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 7A & 7B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 8A-8D, may further include a ring structure 810 (shown in cross-section) formed on a surface of the metal layer 806. In various embodiments, the Hall …
FIGS. 9A & 9B may be implemented as a s o-called " 3 -D" Hall Effect sensor. [0085] In various embodiments, the recess 908 may be formed in the epitaxy layer …
FIGS. 10 A-1O C may be implemented as a s o-called " 3 -D" Hall Effect sensor and may include a substrate 1002, an epitaxy layer 1004, several contact pads 1006 …
FIGS. 11A-11C. The Hall Effect sensor depicted in FIGS.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a substrate having a first side; an epitaxy layer formed on said first side; a three-dimensional recess formed in the epitaxy layer; a seed layer formed on said first side; a graphene layer formed over at least a part of the seed layer; wherein at least a portion of the seed layer between the substrate and said graphene layer is removed without separating the substrate to form a suspended graphene structure from said graphene layer, a support structure formed over a portion of the graphene layer; and an encapsulation structure formed over a portion of the support structure; wherein the encapsulation structure, the support structure, and the graphene layer encloses a volume.
The structure of claim 1, wherein the volume is capable of sustaining a low-pressure environment.
The structure of claim 1, wherein the encapsulation structure completely fills said volume.
The structure of claim 1, said encapsulation layer comprises borophosphosilicate glass.
The structure of claim 1, wherein said encapsulation layer comprises high-density polyethylene.
canceled
A method for producing a ha l l sensor, comprising: providing a substrate having a first side; forming an epitaxy layer on said first side; forming a three-dimensional recess in the epitaxy layer; forming a seed layer on said first side after forming the three-dimensional recess; forming a graphene layer over at least a part of the seed layer without contacting the substrate; and removing a portion of the seed layer between the substrate and said graphene layer.
The method of claim 7 further comprising patterning the graphene layer.
The method of claim 7 wherein said portion of the seed layer is removed by etching.
The method of claim 7 wherein the seed layer comprises a metal layer.
The method of claim 7 further comprising: forming an encapsulation layer over or around at least a portion of the graphene layer.
canceled
canceled
The method of claim [[11]] 7 wherein the three-dimensional recess is formed on the (1,1,1) lattice plane.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially pyramid shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially octagon shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially cube shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially quatrefoil shaped.
A hall sensor, comprising: a substrate having a first side; a seed layer formed on said first side, the seed layer comprising at least a first portion, a second portion and a third portion, each of the first, second and third portions of the seed layer being separated from respective other portions of the seed layer; and a graphene layer formed above the first, second and third portions of the seed layer and in contact with the first, second and third portions of the seed layer; wherein a further portion of the seed layer is removed between the substrate and said graphene layer to form a suspended graphene structure.
The hall sensor of claim 25, wherein at least one wire is connected to each portion of the seed layer.
The ha l l sensor of claim 25, wherein a between the graphene layer and at least one of the stress-reducing mounting structure is arranged portions of the seed layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene structure with encapsulated volume
Materials described outside the worked examples.
graphene
epitaxy layer
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Nanotube and graphene differential displacement sensors
Patent
Atlas literature
Patent
US 9,714,988Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
FIG. 2E, the method may further include structuring the metal layer 208 to form the contact pads 214. In some embodiments, the contact pads 214 may be formed …
FIG. 3C is depicted as p-type. [0056] According to various embodiments, the contact pads 310 may be composed of and or may include various metals, e.g. copper, …
FIG. 4, may be constructed and/or embodied by following the steps and elements illustrated in
FIGS. 5A-5C. The Hall Effect sensor, as illustrated in
FIGS. 6A & 6B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 7A & 7B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 8A-8D, may further include a ring structure 810 (shown in cross-section) formed on a surface of the metal layer 806. In various embodiments, the Hall …
FIGS. 9A & 9B may be implemented as a s o-called " 3 -D" Hall Effect sensor. [0085] In various embodiments, the recess 908 may be formed in the epitaxy layer …
FIGS. 10 A-1O C may be implemented as a s o-called " 3 -D" Hall Effect sensor and may include a substrate 1002, an epitaxy layer 1004, several contact pads 1006 …
FIGS. 11A-11C. The Hall Effect sensor depicted in FIGS.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a substrate having a first side; an epitaxy layer formed on said first side; a three-dimensional recess formed in the epitaxy layer; a seed layer formed on said first side; a graphene layer formed over at least a part of the seed layer; wherein at least a portion of the seed layer between the substrate and said graphene layer is removed without separating the substrate to form a suspended graphene structure from said graphene layer, a support structure formed over a portion of the graphene layer; and an encapsulation structure formed over a portion of the support structure; wherein the encapsulation structure, the support structure, and the graphene layer encloses a volume.
The structure of claim 1, wherein the volume is capable of sustaining a low-pressure environment.
The structure of claim 1, wherein the encapsulation structure completely fills said volume.
The structure of claim 1, said encapsulation layer comprises borophosphosilicate glass.
The structure of claim 1, wherein said encapsulation layer comprises high-density polyethylene.
canceled
A method for producing a ha l l sensor, comprising: providing a substrate having a first side; forming an epitaxy layer on said first side; forming a three-dimensional recess in the epitaxy layer; forming a seed layer on said first side after forming the three-dimensional recess; forming a graphene layer over at least a part of the seed layer without contacting the substrate; and removing a portion of the seed layer between the substrate and said graphene layer.
The method of claim 7 further comprising patterning the graphene layer.
The method of claim 7 wherein said portion of the seed layer is removed by etching.
The method of claim 7 wherein the seed layer comprises a metal layer.
The method of claim 7 further comprising: forming an encapsulation layer over or around at least a portion of the graphene layer.
canceled
canceled
The method of claim [[11]] 7 wherein the three-dimensional recess is formed on the (1,1,1) lattice plane.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially pyramid shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially octagon shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially cube shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially quatrefoil shaped.
A hall sensor, comprising: a substrate having a first side; a seed layer formed on said first side, the seed layer comprising at least a first portion, a second portion and a third portion, each of the first, second and third portions of the seed layer being separated from respective other portions of the seed layer; and a graphene layer formed above the first, second and third portions of the seed layer and in contact with the first, second and third portions of the seed layer; wherein a further portion of the seed layer is removed between the substrate and said graphene layer to form a suspended graphene structure.
The hall sensor of claim 25, wherein at least one wire is connected to each portion of the seed layer.
The ha l l sensor of claim 25, wherein a between the graphene layer and at least one of the stress-reducing mounting structure is arranged portions of the seed layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene structure with encapsulated volume
Materials described outside the worked examples.
graphene
epitaxy layer
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Nanotube and graphene differential displacement sensors
Patent
Atlas literature
Patent
US 9,714,988Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
FIG. 2E, the method may further include structuring the metal layer 208 to form the contact pads 214. In some embodiments, the contact pads 214 may be formed …
FIG. 3C is depicted as p-type. [0056] According to various embodiments, the contact pads 310 may be composed of and or may include various metals, e.g. copper, …
FIG. 4, may be constructed and/or embodied by following the steps and elements illustrated in
FIGS. 5A-5C. The Hall Effect sensor, as illustrated in
FIGS. 6A & 6B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 7A & 7B illustrate additional steps and/or features which may be implemented in the Hall sensor depicted in
FIGS. 8A-8D, may further include a ring structure 810 (shown in cross-section) formed on a surface of the metal layer 806. In various embodiments, the Hall …
FIGS. 9A & 9B may be implemented as a s o-called " 3 -D" Hall Effect sensor. [0085] In various embodiments, the recess 908 may be formed in the epitaxy layer …
FIGS. 10 A-1O C may be implemented as a s o-called " 3 -D" Hall Effect sensor and may include a substrate 1002, an epitaxy layer 1004, several contact pads 1006 …
FIGS. 11A-11C. The Hall Effect sensor depicted in FIGS.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a substrate having a first side; an epitaxy layer formed on said first side; a three-dimensional recess formed in the epitaxy layer; a seed layer formed on said first side; a graphene layer formed over at least a part of the seed layer; wherein at least a portion of the seed layer between the substrate and said graphene layer is removed without separating the substrate to form a suspended graphene structure from said graphene layer, a support structure formed over a portion of the graphene layer; and an encapsulation structure formed over a portion of the support structure; wherein the encapsulation structure, the support structure, and the graphene layer encloses a volume.
The structure of claim 1, wherein the volume is capable of sustaining a low-pressure environment.
The structure of claim 1, wherein the encapsulation structure completely fills said volume.
The structure of claim 1, said encapsulation layer comprises borophosphosilicate glass.
The structure of claim 1, wherein said encapsulation layer comprises high-density polyethylene.
canceled
A method for producing a ha l l sensor, comprising: providing a substrate having a first side; forming an epitaxy layer on said first side; forming a three-dimensional recess in the epitaxy layer; forming a seed layer on said first side after forming the three-dimensional recess; forming a graphene layer over at least a part of the seed layer without contacting the substrate; and removing a portion of the seed layer between the substrate and said graphene layer.
The method of claim 7 further comprising patterning the graphene layer.
The method of claim 7 wherein said portion of the seed layer is removed by etching.
The method of claim 7 wherein the seed layer comprises a metal layer.
The method of claim 7 further comprising: forming an encapsulation layer over or around at least a portion of the graphene layer.
canceled
canceled
The method of claim [[11]] 7 wherein the three-dimensional recess is formed on the (1,1,1) lattice plane.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially pyramid shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially octagon shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially cube shaped.
The method of claim [[11]] 7 wherein the three-dimensional recess is substantially quatrefoil shaped.
A hall sensor, comprising: a substrate having a first side; a seed layer formed on said first side, the seed layer comprising at least a first portion, a second portion and a third portion, each of the first, second and third portions of the seed layer being separated from respective other portions of the seed layer; and a graphene layer formed above the first, second and third portions of the seed layer and in contact with the first, second and third portions of the seed layer; wherein a further portion of the seed layer is removed between the substrate and said graphene layer to form a suspended graphene structure.
The hall sensor of claim 25, wherein at least one wire is connected to each portion of the seed layer.
The ha l l sensor of claim 25, wherein a between the graphene layer and at least one of the stress-reducing mounting structure is arranged portions of the seed layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene structure with encapsulated volume
Materials described outside the worked examples.
graphene
epitaxy layer
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 G & 1H, connecting wires 114 to contact pads 112. In at least one embodiment, the wires 114 may be used to electrically connect the contact pads 112 to …
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Nanotube and graphene differential displacement sensors
hall sensor (method product)
hall sensor with suspended graphene and contact pads
seed layer
encapsulation structure/layer
borophosphosilicate glass
high-density polyethylene
copper
Cu
nickel
Ni
copper-nickel alloy
hall sensor (method product)
hall sensor with suspended graphene and contact pads
seed layer
encapsulation structure/layer
borophosphosilicate glass
high-density polyethylene
copper
Cu
nickel
Ni
copper-nickel alloy
hall sensor (method product)
hall sensor with suspended graphene and contact pads
seed layer
encapsulation structure/layer
borophosphosilicate glass
high-density polyethylene
copper
Cu
nickel
Ni
copper-nickel alloy
hall sensor (method product)
hall sensor with suspended graphene and contact pads
seed layer
encapsulation structure/layer
borophosphosilicate glass
high-density polyethylene
copper
Cu
nickel
Ni
copper-nickel alloy