Patent
Atlas literature
Patent
US 11,156,678Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of a sputter process. Left is RT sputtering of amorphous carbon and NiFe. Middle, sample after anneal, multi layer graphene has formed on top of the NiFe film. At this point the sample is either taken out of the chamber for analysis or left in to proceed to the second …
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 4 illustrates raw signal Mx vs applied field. Magnetic studies by vibrating sample magnetometer show the in-plane magnetization of the full sample.
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic field sensor formed by using in situ solid source graphene, that is absorbed and desorbed on a first ferromagnetic metal creating a graphene multilayer, and using the spin filtering and antiferromagnetic coupling of this graphene multilayer, comprising: a substrate comprising silicon wafers and an oxide layer; an amorphous carbon layer on the substrate grown by sputtering to control the amount of graphene; a first ferromagnetic metal surface grown in situ by sputtering on the amorphous carbon layer; wherein the first ferromagnetic metal surface comprises NiFe; an in-situ graphene film grown on top of the first ferromagnetic layer by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; Application Se ri al No.: 16/274,650 Docket Number: 103631-US₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America antiferromagnetic coupling of the first and second ferromagnetic layer due to this graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; and a capping layer on the second ferromagnetic film. Currently amended
Canceled
Canceled
A magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering formed from the steps comprising: providing a substrate comprising silicon wafers and an oxide layer; performing DC magnetron sputtering to the substrate comprising silicon wafers and thermal oxide; back-sputtering the substrate; growing amorphous carbon on the substrate; sputtering and growing a first ferromagnetic metal surface on the amorphous carbon; wherein the first ferromagnetic metal surface comprises NiFe; annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface; Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America growing an in-situ graphene film by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; sputtering and growing a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; antiferromagnetic coupling between the first and second ferromagnetic layer due to the graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; wherein the first ferromagnetic metal surface comprises NiFe; and capping the second ferromagnetic film with a platinum layer. Currently amended
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the steps of sputtering and annealing were performed in situ in a single chamber. Original
The magnetic field sensor formed by using in s itu solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of back-sputtering the substrate is performed in situ using DC magnetron sputtering for 3 minutes at lO W, 100 V in 20 mTorr of Argon. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the step amorphous carbon was grown in situ at a rate of 0.3 1 nm per minute at 100W in 3 mTorr of Ar. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the first ferromagnetic metal surface is N ix oFe2o and the step of growing the first ferromagnetic metal surface was in situ at a rate of 0.05nm/sec at 1 00 W in 3mTorr Ar. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface was performed in situ at 87 5" C for 10 minutes in a pressure below 2x10-6 Torr. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 further comprising a step of cooling the substrate and the amorphous carbon and the first ferromagnetic Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Govenmn ent of the United States of America metal surface to room temperature after the step of annealing and prior to the step of sputtering and growing the second ferromagnetic film on the graphene film and wherein the second ferromagnetic film is Co 9 oFe to. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the thickness of the platinum layer is 7.5 nm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Full stack prepared in situ using DC magnetron sputtering in an AJA sputtering chamber. Silicon wafers with 27.5 nm thermal oxide were cleaned and back-sputtered, then 2.5 nm amorphous carbon was grown, followed by 25 nm of Ni₈₀Fe20.
7 materials2 process steps
In situ anneal at 875°C for 10 minutes below 2×10⁻⁶ Torr to form multilayer graphene from the amorphous carbon; cooled at 10°C/min to room temperature. Then 12 nm Co₉₀Fe₁₀ was sputter deposited and capped with 7.5 nm Pt. Characterization included four-probe resistance, AFM (1 nm RMS roughness), Raman spectroscopy (D/G ratio 0.18, multilayer graphene over 5×5 µm), VSM magnetometry showing antiferromagnetic coupling, and overall resistance of 12 Ohm with negative ~4% magnetoresistance effect.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic field sensor (spin-valve/GMR stack with multilayer graphene spacer)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
four-probe resistance of full sensor stack | 12 Ohm | Ni₈₀Fe₂₀Co₉₀Fe₁₀ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,156,678Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of a sputter process. Left is RT sputtering of amorphous carbon and NiFe. Middle, sample after anneal, multi layer graphene has formed on top of the NiFe film. At this point the sample is either taken out of the chamber for analysis or left in to proceed to the second …
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 4 illustrates raw signal Mx vs applied field. Magnetic studies by vibrating sample magnetometer show the in-plane magnetization of the full sample.
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic field sensor formed by using in situ solid source graphene, that is absorbed and desorbed on a first ferromagnetic metal creating a graphene multilayer, and using the spin filtering and antiferromagnetic coupling of this graphene multilayer, comprising: a substrate comprising silicon wafers and an oxide layer; an amorphous carbon layer on the substrate grown by sputtering to control the amount of graphene; a first ferromagnetic metal surface grown in situ by sputtering on the amorphous carbon layer; wherein the first ferromagnetic metal surface comprises NiFe; an in-situ graphene film grown on top of the first ferromagnetic layer by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; Application Se ri al No.: 16/274,650 Docket Number: 103631-US₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America antiferromagnetic coupling of the first and second ferromagnetic layer due to this graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; and a capping layer on the second ferromagnetic film. Currently amended
Canceled
Canceled
A magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering formed from the steps comprising: providing a substrate comprising silicon wafers and an oxide layer; performing DC magnetron sputtering to the substrate comprising silicon wafers and thermal oxide; back-sputtering the substrate; growing amorphous carbon on the substrate; sputtering and growing a first ferromagnetic metal surface on the amorphous carbon; wherein the first ferromagnetic metal surface comprises NiFe; annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface; Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America growing an in-situ graphene film by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; sputtering and growing a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; antiferromagnetic coupling between the first and second ferromagnetic layer due to the graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; wherein the first ferromagnetic metal surface comprises NiFe; and capping the second ferromagnetic film with a platinum layer. Currently amended
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the steps of sputtering and annealing were performed in situ in a single chamber. Original
The magnetic field sensor formed by using in s itu solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of back-sputtering the substrate is performed in situ using DC magnetron sputtering for 3 minutes at lO W, 100 V in 20 mTorr of Argon. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the step amorphous carbon was grown in situ at a rate of 0.3 1 nm per minute at 100W in 3 mTorr of Ar. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the first ferromagnetic metal surface is N ix oFe2o and the step of growing the first ferromagnetic metal surface was in situ at a rate of 0.05nm/sec at 1 00 W in 3mTorr Ar. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface was performed in situ at 87 5" C for 10 minutes in a pressure below 2x10-6 Torr. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 further comprising a step of cooling the substrate and the amorphous carbon and the first ferromagnetic Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Govenmn ent of the United States of America metal surface to room temperature after the step of annealing and prior to the step of sputtering and growing the second ferromagnetic film on the graphene film and wherein the second ferromagnetic film is Co 9 oFe to. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the thickness of the platinum layer is 7.5 nm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Full stack prepared in situ using DC magnetron sputtering in an AJA sputtering chamber. Silicon wafers with 27.5 nm thermal oxide were cleaned and back-sputtered, then 2.5 nm amorphous carbon was grown, followed by 25 nm of Ni₈₀Fe20.
7 materials2 process steps
In situ anneal at 875°C for 10 minutes below 2×10⁻⁶ Torr to form multilayer graphene from the amorphous carbon; cooled at 10°C/min to room temperature. Then 12 nm Co₉₀Fe₁₀ was sputter deposited and capped with 7.5 nm Pt. Characterization included four-probe resistance, AFM (1 nm RMS roughness), Raman spectroscopy (D/G ratio 0.18, multilayer graphene over 5×5 µm), VSM magnetometry showing antiferromagnetic coupling, and overall resistance of 12 Ohm with negative ~4% magnetoresistance effect.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic field sensor (spin-valve/GMR stack with multilayer graphene spacer)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
four-probe resistance of full sensor stack | 12 Ohm | Ni₈₀Fe₂₀Co₉₀Fe₁₀ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,156,678Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of a sputter process. Left is RT sputtering of amorphous carbon and NiFe. Middle, sample after anneal, multi layer graphene has formed on top of the NiFe film. At this point the sample is either taken out of the chamber for analysis or left in to proceed to the second …
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 4 illustrates raw signal Mx vs applied field. Magnetic studies by vibrating sample magnetometer show the in-plane magnetization of the full sample.
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic field sensor formed by using in situ solid source graphene, that is absorbed and desorbed on a first ferromagnetic metal creating a graphene multilayer, and using the spin filtering and antiferromagnetic coupling of this graphene multilayer, comprising: a substrate comprising silicon wafers and an oxide layer; an amorphous carbon layer on the substrate grown by sputtering to control the amount of graphene; a first ferromagnetic metal surface grown in situ by sputtering on the amorphous carbon layer; wherein the first ferromagnetic metal surface comprises NiFe; an in-situ graphene film grown on top of the first ferromagnetic layer by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; Application Se ri al No.: 16/274,650 Docket Number: 103631-US₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America antiferromagnetic coupling of the first and second ferromagnetic layer due to this graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; and a capping layer on the second ferromagnetic film. Currently amended
Canceled
Canceled
A magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering formed from the steps comprising: providing a substrate comprising silicon wafers and an oxide layer; performing DC magnetron sputtering to the substrate comprising silicon wafers and thermal oxide; back-sputtering the substrate; growing amorphous carbon on the substrate; sputtering and growing a first ferromagnetic metal surface on the amorphous carbon; wherein the first ferromagnetic metal surface comprises NiFe; annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface; Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America growing an in-situ graphene film by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; sputtering and growing a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; antiferromagnetic coupling between the first and second ferromagnetic layer due to the graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; wherein the first ferromagnetic metal surface comprises NiFe; and capping the second ferromagnetic film with a platinum layer. Currently amended
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the steps of sputtering and annealing were performed in situ in a single chamber. Original
The magnetic field sensor formed by using in s itu solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of back-sputtering the substrate is performed in situ using DC magnetron sputtering for 3 minutes at lO W, 100 V in 20 mTorr of Argon. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the step amorphous carbon was grown in situ at a rate of 0.3 1 nm per minute at 100W in 3 mTorr of Ar. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the first ferromagnetic metal surface is N ix oFe2o and the step of growing the first ferromagnetic metal surface was in situ at a rate of 0.05nm/sec at 1 00 W in 3mTorr Ar. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface was performed in situ at 87 5" C for 10 minutes in a pressure below 2x10-6 Torr. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 further comprising a step of cooling the substrate and the amorphous carbon and the first ferromagnetic Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Govenmn ent of the United States of America metal surface to room temperature after the step of annealing and prior to the step of sputtering and growing the second ferromagnetic film on the graphene film and wherein the second ferromagnetic film is Co 9 oFe to. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the thickness of the platinum layer is 7.5 nm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Full stack prepared in situ using DC magnetron sputtering in an AJA sputtering chamber. Silicon wafers with 27.5 nm thermal oxide were cleaned and back-sputtered, then 2.5 nm amorphous carbon was grown, followed by 25 nm of Ni₈₀Fe20.
7 materials2 process steps
In situ anneal at 875°C for 10 minutes below 2×10⁻⁶ Torr to form multilayer graphene from the amorphous carbon; cooled at 10°C/min to room temperature. Then 12 nm Co₉₀Fe₁₀ was sputter deposited and capped with 7.5 nm Pt. Characterization included four-probe resistance, AFM (1 nm RMS roughness), Raman spectroscopy (D/G ratio 0.18, multilayer graphene over 5×5 µm), VSM magnetometry showing antiferromagnetic coupling, and overall resistance of 12 Ohm with negative ~4% magnetoresistance effect.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic field sensor (spin-valve/GMR stack with multilayer graphene spacer)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
four-probe resistance of full sensor stack | 12 Ohm | Ni₈₀Fe₂₀Co₉₀Fe₁₀ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,156,678Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of a sputter process. Left is RT sputtering of amorphous carbon and NiFe. Middle, sample after anneal, multi layer graphene has formed on top of the NiFe film. At this point the sample is either taken out of the chamber for analysis or left in to proceed to the second …
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 4 illustrates raw signal Mx vs applied field. Magnetic studies by vibrating sample magnetometer show the in-plane magnetization of the full sample.
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic field sensor formed by using in situ solid source graphene, that is absorbed and desorbed on a first ferromagnetic metal creating a graphene multilayer, and using the spin filtering and antiferromagnetic coupling of this graphene multilayer, comprising: a substrate comprising silicon wafers and an oxide layer; an amorphous carbon layer on the substrate grown by sputtering to control the amount of graphene; a first ferromagnetic metal surface grown in situ by sputtering on the amorphous carbon layer; wherein the first ferromagnetic metal surface comprises NiFe; an in-situ graphene film grown on top of the first ferromagnetic layer by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; Application Se ri al No.: 16/274,650 Docket Number: 103631-US₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America antiferromagnetic coupling of the first and second ferromagnetic layer due to this graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; and a capping layer on the second ferromagnetic film. Currently amended
Canceled
Canceled
A magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering formed from the steps comprising: providing a substrate comprising silicon wafers and an oxide layer; performing DC magnetron sputtering to the substrate comprising silicon wafers and thermal oxide; back-sputtering the substrate; growing amorphous carbon on the substrate; sputtering and growing a first ferromagnetic metal surface on the amorphous carbon; wherein the first ferromagnetic metal surface comprises NiFe; annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface; Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Government of the United States of America growing an in-situ graphene film by first absorbing and then desorbing the amorphous carbon layer or solid source carbon, by in situ annealing of the first ferromagnetic layer; wherein the graphene film is multilayer; an interface between the multilayer graphene film and the first ferromagnetic metal surface; sputtering and growing a second ferromagnetic film on the multilayer graphene film; wherein the second ferromagnetic film comprises CoFe; antiferromagnetic coupling between the first and second ferromagnetic layer due to the graphene multilayer; a spin/momentum filtering at the interface between the multilayer graphene film and the first ferromagnetic metal surface; wherein the first ferromagnetic metal surface comprises NiFe; and capping the second ferromagnetic film with a platinum layer. Currently amended
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the steps of sputtering and annealing were performed in situ in a single chamber. Original
The magnetic field sensor formed by using in s itu solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of back-sputtering the substrate is performed in situ using DC magnetron sputtering for 3 minutes at lO W, 100 V in 20 mTorr of Argon. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the step amorphous carbon was grown in situ at a rate of 0.3 1 nm per minute at 100W in 3 mTorr of Ar. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferroma g netic coupling and spin filtering of claim 4 wherein the first ferromagnetic metal surface is N ix oFe2o and the step of growing the first ferromagnetic metal surface was in situ at a rate of 0.05nm/sec at 1 00 W in 3mTorr Ar. Original
The magnetic field sensor formed by usin g in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the step of annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface was performed in situ at 87 5" C for 10 minutes in a pressure below 2x10-6 Torr. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 further comprising a step of cooling the substrate and the amorphous carbon and the first ferromagnetic Application Serial No.: 16/274,650 Docket Number: 103631-U S₃ Inventors: van ' t Erve et al. Applicant: The Govenmn ent of the United States of America metal surface to room temperature after the step of annealing and prior to the step of sputtering and growing the second ferromagnetic film on the graphene film and wherein the second ferromagnetic film is Co 9 oFe to. Original
The magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering of claim 4 wherein the thickness of the platinum layer is 7.5 nm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Full stack prepared in situ using DC magnetron sputtering in an AJA sputtering chamber. Silicon wafers with 27.5 nm thermal oxide were cleaned and back-sputtered, then 2.5 nm amorphous carbon was grown, followed by 25 nm of Ni₈₀Fe20.
7 materials2 process steps
In situ anneal at 875°C for 10 minutes below 2×10⁻⁶ Torr to form multilayer graphene from the amorphous carbon; cooled at 10°C/min to room temperature. Then 12 nm Co₉₀Fe₁₀ was sputter deposited and capped with 7.5 nm Pt. Characterization included four-probe resistance, AFM (1 nm RMS roughness), Raman spectroscopy (D/G ratio 0.18, multilayer graphene over 5×5 µm), VSM magnetometry showing antiferromagnetic coupling, and overall resistance of 12 Ohm with negative ~4% magnetoresistance effect.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic field sensor (spin-valve/GMR stack with multilayer graphene spacer)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is an atomic force microscopy image of Graphene on top of NiFe.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
four-probe resistance of full sensor stack | 12 Ohm | Ni₈₀Fe₂₀Co₉₀Fe₁₀ |
Related documents with shared materials, methods, properties, or citations.
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
AFM RMS surface roughness after anneal before second magnetic layer | 1 nm | multilayer graphene |
Raman D/G ratio of multilayer graphene | 0.18 ratio | multilayer graphene |
magnetoresistance effect (negative, four-probe measurement on unprocessed film) | -4 % | Ni₈₀Fe₂₀Co₉₀Fe₁₀multilayer graphene |
Pressure | 0–8 Torr | — |
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
AFM RMS surface roughness after anneal before second magnetic layer | 1 nm | multilayer graphene |
Raman D/G ratio of multilayer graphene | 0.18 ratio | multilayer graphene |
magnetoresistance effect (negative, four-probe measurement on unprocessed film) | -4 % | Ni₈₀Fe₂₀Co₉₀Fe₁₀multilayer graphene |
Pressure | 0–8 Torr | — |
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
AFM RMS surface roughness after anneal before second magnetic layer | 1 nm | multilayer graphene |
Raman D/G ratio of multilayer graphene | 0.18 ratio | multilayer graphene |
magnetoresistance effect (negative, four-probe measurement on unprocessed film) | -4 % | Ni₈₀Fe₂₀Co₉₀Fe₁₀multilayer graphene |
Pressure | 0–8 Torr | — |
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 3 illustrates a raman map of a 5x5 um area on the left, showing a uniform covarge, dark means > 5 multilayer of graphene. Middle illustrates layer thickness hystogram of 5 by 5 mm 2 area, almost exclusively multi layer graphene. Right is a Raman spectrum of a typical spot showing high …
Figure 5 illustrates several views. 5A illustrates a schematic and shows the external applied field. 5 B illustrates the magnetic field. 5 C is a graph illustrating normalized resistance vs applied field.
AFM RMS surface roughness after anneal before second magnetic layer | 1 nm | multilayer graphene |
Raman D/G ratio of multilayer graphene | 0.18 ratio | multilayer graphene |
magnetoresistance effect (negative, four-probe measurement on unprocessed film) | -4 % | Ni₈₀Fe₂₀Co₉₀Fe₁₀multilayer graphene |
Pressure | 0–8 Torr | — |
