Patent
US 7,947,581Formation of Graphene Wafers on Silicon Substrates
Ce MA
US
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Patent
Atlas literature
Patent
US 7,947,581Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a process flow diagram showing stages in the process according to one embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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The method of claim 4-19 wherein the substrate is a silicon sEieon substrate or a silicon-on-insulator substrate.
The method of claim 2 wherein the substrate is an Si(111) substrate.
The method of claim 2 wherein the substrate is a silicon-on- insulator substrate, the insulator comprising a crystalline insulator film.
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A method of forming a graphene la y er on a substrate, comprising providin g the substrate; depositin g a metal carbide layer onto the substrate; and pulse annealing the metal carbide layer in hi g h vacuum layer to produce the graphene la y er, Thc m eth o d of claim 11 wherein annealing comprises migrating the metallic species of the metal carbide layer toward the vacuum to form a metal rich layer and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 44 19 wherein annealing comprises exposing the surface of the metal carbide layer to flash or pulse heating by lamps or lasers and cooling the backside of the substrate.
The method of claim 12 wherein the cooling comprises cooling by heat exchange media.
The method of claim 44 19 wherein annealing comprises volatilizing the metallic species of the metal carbide layer, sublimating the volatilized metal species to the vacuum and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 16 wherein the metallic species is Si(g), Na(g), Na₂(g), Mg(g), or Al(g).
The method of claim 16 wherein the graphene layer has a thickness of 1 to 10 atoms.
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The method of claim 24 20 wherein patterning directional oxygen ions through a hard oxide mask. patterning the metal rich layer. comprises exposing the graphene layer to
Materials described outside the worked examples.
silicon substrate
Si
silicon-on-insulator substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,947,581Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a process flow diagram showing stages in the process according to one embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. canceled
The method of claim 4-19 wherein the substrate is a silicon sEieon substrate or a silicon-on-insulator substrate.
The method of claim 2 wherein the substrate is an Si(111) substrate.
The method of claim 2 wherein the substrate is a silicon-on- insulator substrate, the insulator comprising a crystalline insulator film.
. canceled
A method of forming a graphene la y er on a substrate, comprising providin g the substrate; depositin g a metal carbide layer onto the substrate; and pulse annealing the metal carbide layer in hi g h vacuum layer to produce the graphene la y er, Thc m eth o d of claim 11 wherein annealing comprises migrating the metallic species of the metal carbide layer toward the vacuum to form a metal rich layer and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 44 19 wherein annealing comprises exposing the surface of the metal carbide layer to flash or pulse heating by lamps or lasers and cooling the backside of the substrate.
The method of claim 12 wherein the cooling comprises cooling by heat exchange media.
The method of claim 44 19 wherein annealing comprises volatilizing the metallic species of the metal carbide layer, sublimating the volatilized metal species to the vacuum and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 16 wherein the metallic species is Si(g), Na(g), Na₂(g), Mg(g), or Al(g).
The method of claim 16 wherein the graphene layer has a thickness of 1 to 10 atoms.
. canceled
The method of claim 24 20 wherein patterning directional oxygen ions through a hard oxide mask. patterning the metal rich layer. comprises exposing the graphene layer to
Materials described outside the worked examples.
silicon substrate
Si
silicon-on-insulator substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,947,581Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a process flow diagram showing stages in the process according to one embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. canceled
The method of claim 4-19 wherein the substrate is a silicon sEieon substrate or a silicon-on-insulator substrate.
The method of claim 2 wherein the substrate is an Si(111) substrate.
The method of claim 2 wherein the substrate is a silicon-on- insulator substrate, the insulator comprising a crystalline insulator film.
. canceled
A method of forming a graphene la y er on a substrate, comprising providin g the substrate; depositin g a metal carbide layer onto the substrate; and pulse annealing the metal carbide layer in hi g h vacuum layer to produce the graphene la y er, Thc m eth o d of claim 11 wherein annealing comprises migrating the metallic species of the metal carbide layer toward the vacuum to form a metal rich layer and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 44 19 wherein annealing comprises exposing the surface of the metal carbide layer to flash or pulse heating by lamps or lasers and cooling the backside of the substrate.
The method of claim 12 wherein the cooling comprises cooling by heat exchange media.
The method of claim 44 19 wherein annealing comprises volatilizing the metallic species of the metal carbide layer, sublimating the volatilized metal species to the vacuum and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 16 wherein the metallic species is Si(g), Na(g), Na₂(g), Mg(g), or Al(g).
The method of claim 16 wherein the graphene layer has a thickness of 1 to 10 atoms.
. canceled
The method of claim 24 20 wherein patterning directional oxygen ions through a hard oxide mask. patterning the metal rich layer. comprises exposing the graphene layer to
Materials described outside the worked examples.
silicon substrate
Si
silicon-on-insulator substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,947,581Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a process flow diagram showing stages in the process according to one embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. canceled
The method of claim 4-19 wherein the substrate is a silicon sEieon substrate or a silicon-on-insulator substrate.
The method of claim 2 wherein the substrate is an Si(111) substrate.
The method of claim 2 wherein the substrate is a silicon-on- insulator substrate, the insulator comprising a crystalline insulator film.
. canceled
A method of forming a graphene la y er on a substrate, comprising providin g the substrate; depositin g a metal carbide layer onto the substrate; and pulse annealing the metal carbide layer in hi g h vacuum layer to produce the graphene la y er, Thc m eth o d of claim 11 wherein annealing comprises migrating the metallic species of the metal carbide layer toward the vacuum to form a metal rich layer and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 44 19 wherein annealing comprises exposing the surface of the metal carbide layer to flash or pulse heating by lamps or lasers and cooling the backside of the substrate.
The method of claim 12 wherein the cooling comprises cooling by heat exchange media.
The method of claim 44 19 wherein annealing comprises volatilizing the metallic species of the metal carbide layer, sublimating the volatilized metal species to the vacuum and reforming the carbon atoms of the metal carbide layer into the graphene layer.
The method of claim 16 wherein the metallic species is Si(g), Na(g), Na₂(g), Mg(g), or Al(g).
The method of claim 16 wherein the graphene layer has a thickness of 1 to 10 atoms.
. canceled
The method of claim 24 20 wherein patterning directional oxygen ions through a hard oxide mask. patterning the metal rich layer. comprises exposing the graphene layer to
Materials described outside the worked examples.
silicon substrate
Si
silicon-on-insulator substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
crystalline insulator film
metal carbide layer
MxCy
silicon carbide
SiC
tungsten carbide
WC
molybdenum carbide
MoC
aluminum carbide
Al₄C₃
cobalt carbide
CoC
tantalum carbide
TaC
magnesium carbide
MgC₂
sodium carbide
Na₂C₂
graphene layer
C
metal rich top layer
GRAPHENE TRANSISTOR
crystalline insulator film
metal carbide layer
MxCy
silicon carbide
SiC
tungsten carbide
WC
molybdenum carbide
MoC
aluminum carbide
Al₄C₃
cobalt carbide
CoC
tantalum carbide
TaC
magnesium carbide
MgC₂
sodium carbide
Na₂C₂
graphene layer
C
metal rich top layer
GRAPHENE TRANSISTOR
crystalline insulator film
metal carbide layer
MxCy
silicon carbide
SiC
tungsten carbide
WC
molybdenum carbide
MoC
aluminum carbide
Al₄C₃
cobalt carbide
CoC
tantalum carbide
TaC
magnesium carbide
MgC₂
sodium carbide
Na₂C₂
graphene layer
C
metal rich top layer
GRAPHENE TRANSISTOR
crystalline insulator film
metal carbide layer
MxCy
silicon carbide
SiC
tungsten carbide
WC
molybdenum carbide
MoC
aluminum carbide
Al₄C₃
cobalt carbide
CoC
tantalum carbide
TaC
magnesium carbide
MgC₂
sodium carbide
Na₂C₂
graphene layer
C
metal rich top layer
GRAPHENE TRANSISTOR