Patent
US 10,256,306Vertically Integrated Multispectral Imaging Sensor
Qing Cao
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,256,306Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a conventional multispectral detector
FIG. 2 illustrates the use of graphene as a diffusion barrier with selective ALD, according to an embodiment of the disclosure.
FIG. 3 illustrates a vertically integrated multispectral imaging sensor with graphene as an electrode and diffusion barrier, according to an embodiment of the …
FIGS. 4-10 illustrate a method of fabricating a vertically integrated multispectral imaging sensor that uses graphene as an electrode and a diffusion barrier, …
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
FIG. 7, a graphene layer is transferred onto the Si₀ 2 layer 32 and patterned to form the first graphene layer 37 that primarily covers the PbSe detector …
FIG. 8, the A 10 3 layer 33 is deposited by ALD over the Si O 2 layer 32. Since the graphene is chemically inert, the A 10 3 will not bond to the graphene, and …
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
FIG. 10, another graphene layer is transferred onto the A 10 3 layer 33 and the PbS detector element 36 and patterned to form the second graphene layer 38 that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The vertically integrated multispectral imaging sensor of claim SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.22.451.2347.481.2390.svg 0.143 0.10 Chemistry Black and white wherein the substrate is formed from glass, a silicon wafer, or a flexible material. SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.3.607.567.636.604.svg 0.123 0.097 Chemistry Black and white Original
SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.5.854.754.875.780.svg 0.087 0.07 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.12.658.1368.761.1413.svg 0.15 0.343 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.15.1462.1631.1563.1675.svg 0.147 0.337 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.18.597.1902.759.1940.svg 0.127 0.54 Chemistry Black and white 3. The vertically integrated mn ultispectral imaging sensor of claim 1, wherein the first graphene layer extends past the edge of the first detector element to partially overlap the SiO 2 layer. 4. The vertically integrated multispectral imaging sensor of claim 1, whe re in the first metal contact layer forms a stripe that extends lengthwise on the substrate. S. The vertically integrated multispectral imaging sensor of claim 1, wherein sides of the embedded second detector element are coextensive with sides of the first graphene layer. 6. The vertically integrated multispectral imaging sensor of claim 1, wherein the second graphene layer extends past the edge of the second detector element to partially overlap the A 10 3 layer. 7. The vertically integrated multispectral imaging sensor of claim 4, wherein the second metal contact layer fo rm s a stripe on the Si O 2 layer that extends in a widthwise direction perpendicular to the first metal contact layer. 8. The vertically integrated multispectral imaging sensor of claim 7, wherein the third metal contact layer forms a stripe on the A 10 3 layer that extends in a lengthwise direction perpendicular to the second metal contact layer. 9. The vertically integrated m ultispectral imaging sensor of claim 1, wherein the first detector element and the second detector element are each selected from a group that includes PbSe, PbS, or CdS, wherein the first detector element differs from the s e cond detector element. 10. The vertically integrated multispectral imaging sensor of claim 1, wherein the first metal contact layer, the second metal contact layer, and the third metal contact layer are each formed from a conductive metal. Original
1 1. A method of fabricating a vertically integrated multispectral imaging sensor, comprising the steps of: depositing a first metal contact layer on a substrate and patterning the first metal contact layer; depositing an SiO 2 layer over the subst ra te and first metal contact layer, and patterning the SiO 2 layer to form a hole that exposes t h e first metal contact layer in approximately the center of the sub s trate; depositing a first detector material in the hole; transferring a graphene layer onto the Si O 2 layer and patterning the graphene layer to form a first graphene lay e r that covers the first detector material; depositing and patterning a second metal layer on the SiO 2 layer, wherein the second metal layer is adjacent to and makes contact with the first graphene layer; depositing an A lt 3 layer over the Si O 2 layer, wherein no A lO 3 accumulates on the first graphene layer to form a hole that surrounds the first graphene layer; depositing a second detector material in the hole on the first graphene layer: transferring another graphene layer onto the A lO 3 layer and the second detector material and patterning the graphene layer to fo rm a second graphene layer that covers t he second detector material; and depositing and patterning a third metal layer on the A 10 3 layer wherein the third metal layer is adjacent to and makes contact with the second graphene layer, wherein the first detector material is sensitive to a different wavelength band of the electromagnetic spectrum than the second detector material. Original
The method of claim 1 1, wherein the first metal contact layer is patterned to form a stripe that extends lengthwise on the substrate. Original
The method of claim 12, wherein the second metal layer is patterned to form a stripe that extends in a width-wise direction on the SiO 2 layer perpendicular to the first metal contact layer. Original
The method of claim 1 1, wherein upper surfaces of the first detector material and the Si O₂ layer are smoothed by a chemical mechanical polishing (C MP) process. Original
The method of claim 10. wherein the A l O 3 (ALD). Original
The method of claim 10, wherein the first ele t are each selected from a group that includes element differs from the second detector element.
The method of claim 10, wherein the first metal and the third metal contact layer ar e each formed layer is deposited by atomic layer deposition detector material and the second detector material PbSe. PbS, or CdS. wherein the first detector Currently amended contact layer. the second metal contact layer, from a conductive metal. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertically integrated multispectral imaging sensor
Materials described outside the worked examples.
graphene
SiO₂
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.27 eV | PbSe |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,256,306Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a conventional multispectral detector
FIG. 2 illustrates the use of graphene as a diffusion barrier with selective ALD, according to an embodiment of the disclosure.
FIG. 3 illustrates a vertically integrated multispectral imaging sensor with graphene as an electrode and diffusion barrier, according to an embodiment of the …
FIGS. 4-10 illustrate a method of fabricating a vertically integrated multispectral imaging sensor that uses graphene as an electrode and a diffusion barrier, …
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
FIG. 7, a graphene layer is transferred onto the Si₀ 2 layer 32 and patterned to form the first graphene layer 37 that primarily covers the PbSe detector …
FIG. 8, the A 10 3 layer 33 is deposited by ALD over the Si O 2 layer 32. Since the graphene is chemically inert, the A 10 3 will not bond to the graphene, and …
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
FIG. 10, another graphene layer is transferred onto the A 10 3 layer 33 and the PbS detector element 36 and patterned to form the second graphene layer 38 that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The vertically integrated multispectral imaging sensor of claim SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.22.451.2347.481.2390.svg 0.143 0.10 Chemistry Black and white wherein the substrate is formed from glass, a silicon wafer, or a flexible material. SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.3.607.567.636.604.svg 0.123 0.097 Chemistry Black and white Original
SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.5.854.754.875.780.svg 0.087 0.07 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.12.658.1368.761.1413.svg 0.15 0.343 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.15.1462.1631.1563.1675.svg 0.147 0.337 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.18.597.1902.759.1940.svg 0.127 0.54 Chemistry Black and white 3. The vertically integrated mn ultispectral imaging sensor of claim 1, wherein the first graphene layer extends past the edge of the first detector element to partially overlap the SiO 2 layer. 4. The vertically integrated multispectral imaging sensor of claim 1, whe re in the first metal contact layer forms a stripe that extends lengthwise on the substrate. S. The vertically integrated multispectral imaging sensor of claim 1, wherein sides of the embedded second detector element are coextensive with sides of the first graphene layer. 6. The vertically integrated multispectral imaging sensor of claim 1, wherein the second graphene layer extends past the edge of the second detector element to partially overlap the A 10 3 layer. 7. The vertically integrated multispectral imaging sensor of claim 4, wherein the second metal contact layer fo rm s a stripe on the Si O 2 layer that extends in a widthwise direction perpendicular to the first metal contact layer. 8. The vertically integrated multispectral imaging sensor of claim 7, wherein the third metal contact layer forms a stripe on the A 10 3 layer that extends in a lengthwise direction perpendicular to the second metal contact layer. 9. The vertically integrated m ultispectral imaging sensor of claim 1, wherein the first detector element and the second detector element are each selected from a group that includes PbSe, PbS, or CdS, wherein the first detector element differs from the s e cond detector element. 10. The vertically integrated multispectral imaging sensor of claim 1, wherein the first metal contact layer, the second metal contact layer, and the third metal contact layer are each formed from a conductive metal. Original
1 1. A method of fabricating a vertically integrated multispectral imaging sensor, comprising the steps of: depositing a first metal contact layer on a substrate and patterning the first metal contact layer; depositing an SiO 2 layer over the subst ra te and first metal contact layer, and patterning the SiO 2 layer to form a hole that exposes t h e first metal contact layer in approximately the center of the sub s trate; depositing a first detector material in the hole; transferring a graphene layer onto the Si O 2 layer and patterning the graphene layer to form a first graphene lay e r that covers the first detector material; depositing and patterning a second metal layer on the SiO 2 layer, wherein the second metal layer is adjacent to and makes contact with the first graphene layer; depositing an A lt 3 layer over the Si O 2 layer, wherein no A lO 3 accumulates on the first graphene layer to form a hole that surrounds the first graphene layer; depositing a second detector material in the hole on the first graphene layer: transferring another graphene layer onto the A lO 3 layer and the second detector material and patterning the graphene layer to fo rm a second graphene layer that covers t he second detector material; and depositing and patterning a third metal layer on the A 10 3 layer wherein the third metal layer is adjacent to and makes contact with the second graphene layer, wherein the first detector material is sensitive to a different wavelength band of the electromagnetic spectrum than the second detector material. Original
The method of claim 1 1, wherein the first metal contact layer is patterned to form a stripe that extends lengthwise on the substrate. Original
The method of claim 12, wherein the second metal layer is patterned to form a stripe that extends in a width-wise direction on the SiO 2 layer perpendicular to the first metal contact layer. Original
The method of claim 1 1, wherein upper surfaces of the first detector material and the Si O₂ layer are smoothed by a chemical mechanical polishing (C MP) process. Original
The method of claim 10. wherein the A l O 3 (ALD). Original
The method of claim 10, wherein the first ele t are each selected from a group that includes element differs from the second detector element.
The method of claim 10, wherein the first metal and the third metal contact layer ar e each formed layer is deposited by atomic layer deposition detector material and the second detector material PbSe. PbS, or CdS. wherein the first detector Currently amended contact layer. the second metal contact layer, from a conductive metal. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertically integrated multispectral imaging sensor
Materials described outside the worked examples.
graphene
SiO₂
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.27 eV | PbSe |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,256,306Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a conventional multispectral detector
FIG. 2 illustrates the use of graphene as a diffusion barrier with selective ALD, according to an embodiment of the disclosure.
FIG. 3 illustrates a vertically integrated multispectral imaging sensor with graphene as an electrode and diffusion barrier, according to an embodiment of the …
FIGS. 4-10 illustrate a method of fabricating a vertically integrated multispectral imaging sensor that uses graphene as an electrode and a diffusion barrier, …
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
FIG. 7, a graphene layer is transferred onto the Si₀ 2 layer 32 and patterned to form the first graphene layer 37 that primarily covers the PbSe detector …
FIG. 8, the A 10 3 layer 33 is deposited by ALD over the Si O 2 layer 32. Since the graphene is chemically inert, the A 10 3 will not bond to the graphene, and …
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
FIG. 10, another graphene layer is transferred onto the A 10 3 layer 33 and the PbS detector element 36 and patterned to form the second graphene layer 38 that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The vertically integrated multispectral imaging sensor of claim SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.22.451.2347.481.2390.svg 0.143 0.10 Chemistry Black and white wherein the substrate is formed from glass, a silicon wafer, or a flexible material. SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.3.607.567.636.604.svg 0.123 0.097 Chemistry Black and white Original
SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.5.854.754.875.780.svg 0.087 0.07 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.12.658.1368.761.1413.svg 0.15 0.343 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.15.1462.1631.1563.1675.svg 0.147 0.337 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.18.597.1902.759.1940.svg 0.127 0.54 Chemistry Black and white 3. The vertically integrated mn ultispectral imaging sensor of claim 1, wherein the first graphene layer extends past the edge of the first detector element to partially overlap the SiO 2 layer. 4. The vertically integrated multispectral imaging sensor of claim 1, whe re in the first metal contact layer forms a stripe that extends lengthwise on the substrate. S. The vertically integrated multispectral imaging sensor of claim 1, wherein sides of the embedded second detector element are coextensive with sides of the first graphene layer. 6. The vertically integrated multispectral imaging sensor of claim 1, wherein the second graphene layer extends past the edge of the second detector element to partially overlap the A 10 3 layer. 7. The vertically integrated multispectral imaging sensor of claim 4, wherein the second metal contact layer fo rm s a stripe on the Si O 2 layer that extends in a widthwise direction perpendicular to the first metal contact layer. 8. The vertically integrated multispectral imaging sensor of claim 7, wherein the third metal contact layer forms a stripe on the A 10 3 layer that extends in a lengthwise direction perpendicular to the second metal contact layer. 9. The vertically integrated m ultispectral imaging sensor of claim 1, wherein the first detector element and the second detector element are each selected from a group that includes PbSe, PbS, or CdS, wherein the first detector element differs from the s e cond detector element. 10. The vertically integrated multispectral imaging sensor of claim 1, wherein the first metal contact layer, the second metal contact layer, and the third metal contact layer are each formed from a conductive metal. Original
1 1. A method of fabricating a vertically integrated multispectral imaging sensor, comprising the steps of: depositing a first metal contact layer on a substrate and patterning the first metal contact layer; depositing an SiO 2 layer over the subst ra te and first metal contact layer, and patterning the SiO 2 layer to form a hole that exposes t h e first metal contact layer in approximately the center of the sub s trate; depositing a first detector material in the hole; transferring a graphene layer onto the Si O 2 layer and patterning the graphene layer to form a first graphene lay e r that covers the first detector material; depositing and patterning a second metal layer on the SiO 2 layer, wherein the second metal layer is adjacent to and makes contact with the first graphene layer; depositing an A lt 3 layer over the Si O 2 layer, wherein no A lO 3 accumulates on the first graphene layer to form a hole that surrounds the first graphene layer; depositing a second detector material in the hole on the first graphene layer: transferring another graphene layer onto the A lO 3 layer and the second detector material and patterning the graphene layer to fo rm a second graphene layer that covers t he second detector material; and depositing and patterning a third metal layer on the A 10 3 layer wherein the third metal layer is adjacent to and makes contact with the second graphene layer, wherein the first detector material is sensitive to a different wavelength band of the electromagnetic spectrum than the second detector material. Original
The method of claim 1 1, wherein the first metal contact layer is patterned to form a stripe that extends lengthwise on the substrate. Original
The method of claim 12, wherein the second metal layer is patterned to form a stripe that extends in a width-wise direction on the SiO 2 layer perpendicular to the first metal contact layer. Original
The method of claim 1 1, wherein upper surfaces of the first detector material and the Si O₂ layer are smoothed by a chemical mechanical polishing (C MP) process. Original
The method of claim 10. wherein the A l O 3 (ALD). Original
The method of claim 10, wherein the first ele t are each selected from a group that includes element differs from the second detector element.
The method of claim 10, wherein the first metal and the third metal contact layer ar e each formed layer is deposited by atomic layer deposition detector material and the second detector material PbSe. PbS, or CdS. wherein the first detector Currently amended contact layer. the second metal contact layer, from a conductive metal. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertically integrated multispectral imaging sensor
Materials described outside the worked examples.
graphene
SiO₂
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.27 eV | PbSe |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,256,306Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a conventional multispectral detector
FIG. 2 illustrates the use of graphene as a diffusion barrier with selective ALD, according to an embodiment of the disclosure.
FIG. 3 illustrates a vertically integrated multispectral imaging sensor with graphene as an electrode and diffusion barrier, according to an embodiment of the …
FIGS. 4-10 illustrate a method of fabricating a vertically integrated multispectral imaging sensor that uses graphene as an electrode and a diffusion barrier, …
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
FIG. 7, a graphene layer is transferred onto the Si₀ 2 layer 32 and patterned to form the first graphene layer 37 that primarily covers the PbSe detector …
FIG. 8, the A 10 3 layer 33 is deposited by ALD over the Si O 2 layer 32. Since the graphene is chemically inert, the A 10 3 will not bond to the graphene, and …
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
FIG. 10, another graphene layer is transferred onto the A 10 3 layer 33 and the PbS detector element 36 and patterned to form the second graphene layer 38 that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The vertically integrated multispectral imaging sensor of claim SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.22.451.2347.481.2390.svg 0.143 0.10 Chemistry Black and white wherein the substrate is formed from glass, a silicon wafer, or a flexible material. SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.3.607.567.636.604.svg 0.123 0.097 Chemistry Black and white Original
SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.5.854.754.875.780.svg 0.087 0.07 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.12.658.1368.761.1413.svg 0.15 0.343 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.15.1462.1631.1563.1675.svg 0.147 0.337 Chemistry Black and white SVG 15827785.09-27-2018.JMRSK₁MDLXEAPX3.CLM.1.18.597.1902.759.1940.svg 0.127 0.54 Chemistry Black and white 3. The vertically integrated mn ultispectral imaging sensor of claim 1, wherein the first graphene layer extends past the edge of the first detector element to partially overlap the SiO 2 layer. 4. The vertically integrated multispectral imaging sensor of claim 1, whe re in the first metal contact layer forms a stripe that extends lengthwise on the substrate. S. The vertically integrated multispectral imaging sensor of claim 1, wherein sides of the embedded second detector element are coextensive with sides of the first graphene layer. 6. The vertically integrated multispectral imaging sensor of claim 1, wherein the second graphene layer extends past the edge of the second detector element to partially overlap the A 10 3 layer. 7. The vertically integrated multispectral imaging sensor of claim 4, wherein the second metal contact layer fo rm s a stripe on the Si O 2 layer that extends in a widthwise direction perpendicular to the first metal contact layer. 8. The vertically integrated multispectral imaging sensor of claim 7, wherein the third metal contact layer forms a stripe on the A 10 3 layer that extends in a lengthwise direction perpendicular to the second metal contact layer. 9. The vertically integrated m ultispectral imaging sensor of claim 1, wherein the first detector element and the second detector element are each selected from a group that includes PbSe, PbS, or CdS, wherein the first detector element differs from the s e cond detector element. 10. The vertically integrated multispectral imaging sensor of claim 1, wherein the first metal contact layer, the second metal contact layer, and the third metal contact layer are each formed from a conductive metal. Original
1 1. A method of fabricating a vertically integrated multispectral imaging sensor, comprising the steps of: depositing a first metal contact layer on a substrate and patterning the first metal contact layer; depositing an SiO 2 layer over the subst ra te and first metal contact layer, and patterning the SiO 2 layer to form a hole that exposes t h e first metal contact layer in approximately the center of the sub s trate; depositing a first detector material in the hole; transferring a graphene layer onto the Si O 2 layer and patterning the graphene layer to form a first graphene lay e r that covers the first detector material; depositing and patterning a second metal layer on the SiO 2 layer, wherein the second metal layer is adjacent to and makes contact with the first graphene layer; depositing an A lt 3 layer over the Si O 2 layer, wherein no A lO 3 accumulates on the first graphene layer to form a hole that surrounds the first graphene layer; depositing a second detector material in the hole on the first graphene layer: transferring another graphene layer onto the A lO 3 layer and the second detector material and patterning the graphene layer to fo rm a second graphene layer that covers t he second detector material; and depositing and patterning a third metal layer on the A 10 3 layer wherein the third metal layer is adjacent to and makes contact with the second graphene layer, wherein the first detector material is sensitive to a different wavelength band of the electromagnetic spectrum than the second detector material. Original
The method of claim 1 1, wherein the first metal contact layer is patterned to form a stripe that extends lengthwise on the substrate. Original
The method of claim 12, wherein the second metal layer is patterned to form a stripe that extends in a width-wise direction on the SiO 2 layer perpendicular to the first metal contact layer. Original
The method of claim 1 1, wherein upper surfaces of the first detector material and the Si O₂ layer are smoothed by a chemical mechanical polishing (C MP) process. Original
The method of claim 10. wherein the A l O 3 (ALD). Original
The method of claim 10, wherein the first ele t are each selected from a group that includes element differs from the second detector element.
The method of claim 10, wherein the first metal and the third metal contact layer ar e each formed layer is deposited by atomic layer deposition detector material and the second detector material PbSe. PbS, or CdS. wherein the first detector Currently amended contact layer. the second metal contact layer, from a conductive metal. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertically integrated multispectral imaging sensor
Materials described outside the worked examples.
graphene
SiO₂
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, PbSe material, which has a narrow bandgap, in deposited in the hole 52, and the upper surfaces of the deposited PbSe material and the Si O 2 layer 32 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.27 eV | PbSe |
Related documents with shared materials, methods, properties, or citations.
conductive metal contact
PbSe
PbS
CdS
glass substrate
silicon wafer substrate
flexible substrate material
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
| 0.37 eV |
PbS |
Optical Band Gap | 2.45 eV | CdS |
Thickness | 200–600 nm | — |
conductive metal contact
PbSe
PbS
CdS
glass substrate
silicon wafer substrate
flexible substrate material
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
| 0.37 eV |
PbS |
Optical Band Gap | 2.45 eV | CdS |
Thickness | 200–600 nm | — |
conductive metal contact
PbSe
PbS
CdS
glass substrate
silicon wafer substrate
flexible substrate material
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
| 0.37 eV |
PbS |
Optical Band Gap | 2.45 eV | CdS |
Thickness | 200–600 nm | — |
conductive metal contact
PbSe
PbS
CdS
glass substrate
silicon wafer substrate
flexible substrate material
FIG. 9, PbS, a material with a wider bandgap light sensor than PbSe, is deposited in the hole 82 to form the PbS detector element 36. Referring to
| 0.37 eV |
PbS |
Optical Band Gap | 2.45 eV | CdS |
Thickness | 200–600 nm | — |