Patent
US 9,324,804GRAPHENE-ON-SEMICONDUCTOR SUBSTRATES FOR ANALOG ELECTRONICS
Max G. Lagally
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,324,804Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
FIG. 2(A) is a cross-sectional diagram of the structure of
FIG. 3(A) shows an electronic energy band diagram for a germanium (Ge) substrate having a surface coating comprising mixed germanium oxides and for a graphene …
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 6 shows a Hall bar set-up for four-probe resistance measurements. [0019]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
FIG. 8 shows a plot of the calculated carrier density in graphene vs. the doping concentration in Ge transferred to different substrates, as described in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrically conductive structure comprising: a substrate comprising a layer of semiconductor material; a layer of graphene; an interface region separating the layer of semiconductor material from the layer of graphene, wherein the interface region provides surface energy states lying within the fundamental energy bandgap of the semiconductor material, and further wherein the graphene is doped with charge carriers from the surface energy states.
The structure of claim 1, wherein the layer of semiconductor material has a thickness of no greater than about 10 gm.
The structure of claim 1, wherein the semiconductor material is germanium, the interface region comprises sub-stoichiometric germanium oxides and germanium dioxide that provide donor-like surface energy states lying within the fundamental energy bandgap of germanium and having energy levels above the Fermi level of graphene, and the graphene is doped with electrons from the surface energy states.
The structure of claim 1, wherein the layer of graphene is a single sheet of graphene.
A field effect transistor comprising: a source electrode; a drain electrode; gate electrode; a conducting channel in electrical contact with the source electrode and the drain electrode, the conducting channel comprising a layer of graphene; a germanium capping layer disposed over the conducting channel; a gate dielectric disposed between the gate electrode and the germanium capping layer; a germanium substrate; and an interface region separating the germanium substrate from the layer of graphene, the interface region comprising sub-stoichiometric germanium oxides and germanium dioxide; wherein the sub-stoichiometric germanium oxides and germanium dioxide produce energy states within the f u ndamental energy bandgap of the germanium and further wherein charge carriers occupying the energy states transfer to the graphene at room temperature to provide mobile charge carriers in the graphene. -3- Atty. Dkt. No. 00300-0220
A method of making an electrically conductive structure, the method comprising transferring a graphene sheet onto a surface of a graphene substrate in an aqueous environment, the surface having a layer of sub-stoichiometric germanium oxide; wherein an interface region forms between the surface of the germanium substrate and the graphene sheet, the interface region comprising germanium dioxide and water-insoluble, sub-stoichiometric germanium oxides. -4- withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrically conductive structure
field effect transistor
Materials described outside the worked examples.
graphene
semiconductor material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene sheet resistance upper bound (claim 7) | ≤ 1000 Ohm/sq | graphene |
graphene sheet resistance upper bound (claim 8) | ≤ 100 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,804Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
FIG. 2(A) is a cross-sectional diagram of the structure of
FIG. 3(A) shows an electronic energy band diagram for a germanium (Ge) substrate having a surface coating comprising mixed germanium oxides and for a graphene …
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 6 shows a Hall bar set-up for four-probe resistance measurements. [0019]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
FIG. 8 shows a plot of the calculated carrier density in graphene vs. the doping concentration in Ge transferred to different substrates, as described in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrically conductive structure comprising: a substrate comprising a layer of semiconductor material; a layer of graphene; an interface region separating the layer of semiconductor material from the layer of graphene, wherein the interface region provides surface energy states lying within the fundamental energy bandgap of the semiconductor material, and further wherein the graphene is doped with charge carriers from the surface energy states.
The structure of claim 1, wherein the layer of semiconductor material has a thickness of no greater than about 10 gm.
The structure of claim 1, wherein the semiconductor material is germanium, the interface region comprises sub-stoichiometric germanium oxides and germanium dioxide that provide donor-like surface energy states lying within the fundamental energy bandgap of germanium and having energy levels above the Fermi level of graphene, and the graphene is doped with electrons from the surface energy states.
The structure of claim 1, wherein the layer of graphene is a single sheet of graphene.
A field effect transistor comprising: a source electrode; a drain electrode; gate electrode; a conducting channel in electrical contact with the source electrode and the drain electrode, the conducting channel comprising a layer of graphene; a germanium capping layer disposed over the conducting channel; a gate dielectric disposed between the gate electrode and the germanium capping layer; a germanium substrate; and an interface region separating the germanium substrate from the layer of graphene, the interface region comprising sub-stoichiometric germanium oxides and germanium dioxide; wherein the sub-stoichiometric germanium oxides and germanium dioxide produce energy states within the f u ndamental energy bandgap of the germanium and further wherein charge carriers occupying the energy states transfer to the graphene at room temperature to provide mobile charge carriers in the graphene. -3- Atty. Dkt. No. 00300-0220
A method of making an electrically conductive structure, the method comprising transferring a graphene sheet onto a surface of a graphene substrate in an aqueous environment, the surface having a layer of sub-stoichiometric germanium oxide; wherein an interface region forms between the surface of the germanium substrate and the graphene sheet, the interface region comprising germanium dioxide and water-insoluble, sub-stoichiometric germanium oxides. -4- withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrically conductive structure
field effect transistor
Materials described outside the worked examples.
graphene
semiconductor material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene sheet resistance upper bound (claim 7) | ≤ 1000 Ohm/sq | graphene |
graphene sheet resistance upper bound (claim 8) | ≤ 100 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,804Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
FIG. 2(A) is a cross-sectional diagram of the structure of
FIG. 3(A) shows an electronic energy band diagram for a germanium (Ge) substrate having a surface coating comprising mixed germanium oxides and for a graphene …
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 6 shows a Hall bar set-up for four-probe resistance measurements. [0019]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
FIG. 8 shows a plot of the calculated carrier density in graphene vs. the doping concentration in Ge transferred to different substrates, as described in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrically conductive structure comprising: a substrate comprising a layer of semiconductor material; a layer of graphene; an interface region separating the layer of semiconductor material from the layer of graphene, wherein the interface region provides surface energy states lying within the fundamental energy bandgap of the semiconductor material, and further wherein the graphene is doped with charge carriers from the surface energy states.
The structure of claim 1, wherein the layer of semiconductor material has a thickness of no greater than about 10 gm.
The structure of claim 1, wherein the semiconductor material is germanium, the interface region comprises sub-stoichiometric germanium oxides and germanium dioxide that provide donor-like surface energy states lying within the fundamental energy bandgap of germanium and having energy levels above the Fermi level of graphene, and the graphene is doped with electrons from the surface energy states.
The structure of claim 1, wherein the layer of graphene is a single sheet of graphene.
A field effect transistor comprising: a source electrode; a drain electrode; gate electrode; a conducting channel in electrical contact with the source electrode and the drain electrode, the conducting channel comprising a layer of graphene; a germanium capping layer disposed over the conducting channel; a gate dielectric disposed between the gate electrode and the germanium capping layer; a germanium substrate; and an interface region separating the germanium substrate from the layer of graphene, the interface region comprising sub-stoichiometric germanium oxides and germanium dioxide; wherein the sub-stoichiometric germanium oxides and germanium dioxide produce energy states within the f u ndamental energy bandgap of the germanium and further wherein charge carriers occupying the energy states transfer to the graphene at room temperature to provide mobile charge carriers in the graphene. -3- Atty. Dkt. No. 00300-0220
A method of making an electrically conductive structure, the method comprising transferring a graphene sheet onto a surface of a graphene substrate in an aqueous environment, the surface having a layer of sub-stoichiometric germanium oxide; wherein an interface region forms between the surface of the germanium substrate and the graphene sheet, the interface region comprising germanium dioxide and water-insoluble, sub-stoichiometric germanium oxides. -4- withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrically conductive structure
field effect transistor
Materials described outside the worked examples.
graphene
semiconductor material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene sheet resistance upper bound (claim 7) | ≤ 1000 Ohm/sq | graphene |
graphene sheet resistance upper bound (claim 8) | ≤ 100 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,804Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
FIG. 2(A) is a cross-sectional diagram of the structure of
FIG. 3(A) shows an electronic energy band diagram for a germanium (Ge) substrate having a surface coating comprising mixed germanium oxides and for a graphene …
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 6 shows a Hall bar set-up for four-probe resistance measurements. [0019]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
FIG. 8 shows a plot of the calculated carrier density in graphene vs. the doping concentration in Ge transferred to different substrates, as described in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrically conductive structure comprising: a substrate comprising a layer of semiconductor material; a layer of graphene; an interface region separating the layer of semiconductor material from the layer of graphene, wherein the interface region provides surface energy states lying within the fundamental energy bandgap of the semiconductor material, and further wherein the graphene is doped with charge carriers from the surface energy states.
The structure of claim 1, wherein the layer of semiconductor material has a thickness of no greater than about 10 gm.
The structure of claim 1, wherein the semiconductor material is germanium, the interface region comprises sub-stoichiometric germanium oxides and germanium dioxide that provide donor-like surface energy states lying within the fundamental energy bandgap of germanium and having energy levels above the Fermi level of graphene, and the graphene is doped with electrons from the surface energy states.
The structure of claim 1, wherein the layer of graphene is a single sheet of graphene.
A field effect transistor comprising: a source electrode; a drain electrode; gate electrode; a conducting channel in electrical contact with the source electrode and the drain electrode, the conducting channel comprising a layer of graphene; a germanium capping layer disposed over the conducting channel; a gate dielectric disposed between the gate electrode and the germanium capping layer; a germanium substrate; and an interface region separating the germanium substrate from the layer of graphene, the interface region comprising sub-stoichiometric germanium oxides and germanium dioxide; wherein the sub-stoichiometric germanium oxides and germanium dioxide produce energy states within the f u ndamental energy bandgap of the germanium and further wherein charge carriers occupying the energy states transfer to the graphene at room temperature to provide mobile charge carriers in the graphene. -3- Atty. Dkt. No. 00300-0220
A method of making an electrically conductive structure, the method comprising transferring a graphene sheet onto a surface of a graphene substrate in an aqueous environment, the surface having a layer of sub-stoichiometric germanium oxide; wherein an interface region forms between the surface of the germanium substrate and the graphene sheet, the interface region comprising germanium dioxide and water-insoluble, sub-stoichiometric germanium oxides. -4- withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrically conductive structure
field effect transistor
Materials described outside the worked examples.
graphene
semiconductor material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram showing a perspective view of an electrically conductive graphene-on-germanium structure. [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene sheet resistance upper bound (claim 7) | ≤ 1000 Ohm/sq | graphene |
graphene sheet resistance upper bound (claim 8) | ≤ 100 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
germanium
Ge
sub-stoichiometric germanium oxides
GeOx (x<2)
germanium dioxide
GeO₂
silicon
Si
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
Temperature | 10–300 K | — |
Thickness | 13–104 cm | — |
Thickness | 13–1014 cm | — |
Thickness | 1013–1014 cm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 2–10 nm | — |
germanium
Ge
sub-stoichiometric germanium oxides
GeOx (x<2)
germanium dioxide
GeO₂
silicon
Si
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
Temperature | 10–300 K | — |
Thickness | 13–104 cm | — |
Thickness | 13–1014 cm | — |
Thickness | 1013–1014 cm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 2–10 nm | — |
germanium
Ge
sub-stoichiometric germanium oxides
GeOx (x<2)
germanium dioxide
GeO₂
silicon
Si
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
Temperature | 10–300 K | — |
Thickness | 13–104 cm | — |
Thickness | 13–1014 cm | — |
Thickness | 1013–1014 cm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 2–10 nm | — |
germanium
Ge
sub-stoichiometric germanium oxides
GeOx (x<2)
germanium dioxide
GeO₂
silicon
Si
FIG. 4 is a diagram of a method of making an electrically conductive graphene-on- germanium structure. [0017]
FIG. 5 is a schematic diagram of a field effect transistor that incorporates a graphene-on- germanium structure into its channel. [0018]
FIG. 7 is a graph of the voltage-current characteristic measured for graphene transferred onto SiO 2, H-terminated Si (001), and mixed-oxide terminated Ge …
Temperature | 10–300 K | — |
Thickness | 13–104 cm | — |
Thickness | 13–1014 cm | — |
Thickness | 1013–1014 cm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 2–10 nm | — |