Patent
US 9,048,310Graphene Switching Device Having Tunable Barrier
Jae-ho LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,048,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; 4 Atty. Dkt. No. 2557 …
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
FIGS. 3 C and 3D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 5 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; [0037]
FIG. 6 is a graph for explaining an operation of metal particles of the graphene switching device of
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992352.17.288.1475.1581.1535.svg 0.2 4.31 Graph Black and white a first electrode on a first area of the semiconductor substrate; an insulation layer on a second area of the semiconductor substrate, the first area and the second area being spaced apart from each other; a graphene layer on the insulation layer, the graphene layer extending onto the semiconductor substrate toward the first electrode, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well of the semiconductor substrate, the first well being configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the graphene layer and the insulation layer; a gate insulation layer on the graphene layer; and SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992353.3.122.145.2274.295.svg 0.5 7.173 Graph Black and white a gate electrode on the gate insulation layer.
The graphene switching device of claim 1, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 1, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 1, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 1, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an impurity; a first electrode on a first area of the semiconductor substrate; SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992354.3.112.144.2274.294.svg 0.5 7.207 Graph Black and white an insulation layer on a second area of the semiconductor substrate; a plurality of metal particles on a surface of the semiconductor substrate between the first area and the second area; a graphene layer on the plurality of metal particles, the graphene layer extending onto the insulation layer, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well, the first well configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the insulation layer, the graphene layer between the second electrode and insulation layer; a gate insulation layer on the graphene layer; and a gate electrode on the gate insulation layer.
The graphene switching device of claim 7, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 7, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 7, further comprising: an insulation material, wherein an upper surface of the first well defines a plurality of grooves, SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992355.3.123.141.2275.291.svg 0.5 7.173 Graph Black and white the insulation material at least partially fills each of the plurality of grooves, and the plurality of metal particles are between the insulation material and the graphene layer.
The graphene switching device of claim 7, wherein each of the plurality of metal particles has a size in a range of about 1 nm and about 10 nm.
The graphene switching device of claim 7, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 7, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 7, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphe n e switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with one of an n-type impurity and a p-type impurity; a first electrode, a gate electrode, and a second electrode spaced apart from each other on the semiconductor substrate; an insulating layer between the second electrode and the substrate; a graphene layer between the second electrode and the insulating layer, the graphene layer extending over a part of the first well, the graphene layer being spaced apart from the first electrode, the first well being configured to form an energy barrier between the graphene layer and the first electrode; and a gate insulating layer between the graphene layer and the gate electrode. Application No. 13/964,353 Attorney Docket No. 2557S I-00 1960-US Page 7 of
The graphene switching device of claim 19, an insulation material, wherein an upper surface that are spaced apart from each other, the insulation grooves, and the plurality of metal particles are layer. *** END CLAIM LISTING *** further comprising: a plurality of metal particles; of the first well defines a plurality of grooves material at least partially fills the plurality of between the insulation material and the graphene
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier (insulation layer on substrate)
Materials described outside the worked examples.
graphene
semiconductor substrate (impurity-doped, first well)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–30 nm |
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US 9,048,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; 4 Atty. Dkt. No. 2557 …
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
FIGS. 3 C and 3D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 5 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; [0037]
FIG. 6 is a graph for explaining an operation of metal particles of the graphene switching device of
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992352.17.288.1475.1581.1535.svg 0.2 4.31 Graph Black and white a first electrode on a first area of the semiconductor substrate; an insulation layer on a second area of the semiconductor substrate, the first area and the second area being spaced apart from each other; a graphene layer on the insulation layer, the graphene layer extending onto the semiconductor substrate toward the first electrode, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well of the semiconductor substrate, the first well being configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the graphene layer and the insulation layer; a gate insulation layer on the graphene layer; and SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992353.3.122.145.2274.295.svg 0.5 7.173 Graph Black and white a gate electrode on the gate insulation layer.
The graphene switching device of claim 1, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 1, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 1, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 1, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an impurity; a first electrode on a first area of the semiconductor substrate; SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992354.3.112.144.2274.294.svg 0.5 7.207 Graph Black and white an insulation layer on a second area of the semiconductor substrate; a plurality of metal particles on a surface of the semiconductor substrate between the first area and the second area; a graphene layer on the plurality of metal particles, the graphene layer extending onto the insulation layer, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well, the first well configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the insulation layer, the graphene layer between the second electrode and insulation layer; a gate insulation layer on the graphene layer; and a gate electrode on the gate insulation layer.
The graphene switching device of claim 7, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 7, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 7, further comprising: an insulation material, wherein an upper surface of the first well defines a plurality of grooves, SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992355.3.123.141.2275.291.svg 0.5 7.173 Graph Black and white the insulation material at least partially fills each of the plurality of grooves, and the plurality of metal particles are between the insulation material and the graphene layer.
The graphene switching device of claim 7, wherein each of the plurality of metal particles has a size in a range of about 1 nm and about 10 nm.
The graphene switching device of claim 7, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 7, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 7, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphe n e switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with one of an n-type impurity and a p-type impurity; a first electrode, a gate electrode, and a second electrode spaced apart from each other on the semiconductor substrate; an insulating layer between the second electrode and the substrate; a graphene layer between the second electrode and the insulating layer, the graphene layer extending over a part of the first well, the graphene layer being spaced apart from the first electrode, the first well being configured to form an energy barrier between the graphene layer and the first electrode; and a gate insulating layer between the graphene layer and the gate electrode. Application No. 13/964,353 Attorney Docket No. 2557S I-00 1960-US Page 7 of
The graphene switching device of claim 19, an insulation material, wherein an upper surface that are spaced apart from each other, the insulation grooves, and the plurality of metal particles are layer. *** END CLAIM LISTING *** further comprising: a plurality of metal particles; of the first well defines a plurality of grooves material at least partially fills the plurality of between the insulation material and the graphene
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier (insulation layer on substrate)
Materials described outside the worked examples.
graphene
semiconductor substrate (impurity-doped, first well)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–30 nm |
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Patent
Atlas literature
Patent
US 9,048,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; 4 Atty. Dkt. No. 2557 …
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
FIGS. 3 C and 3D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 5 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; [0037]
FIG. 6 is a graph for explaining an operation of metal particles of the graphene switching device of
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992352.17.288.1475.1581.1535.svg 0.2 4.31 Graph Black and white a first electrode on a first area of the semiconductor substrate; an insulation layer on a second area of the semiconductor substrate, the first area and the second area being spaced apart from each other; a graphene layer on the insulation layer, the graphene layer extending onto the semiconductor substrate toward the first electrode, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well of the semiconductor substrate, the first well being configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the graphene layer and the insulation layer; a gate insulation layer on the graphene layer; and SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992353.3.122.145.2274.295.svg 0.5 7.173 Graph Black and white a gate electrode on the gate insulation layer.
The graphene switching device of claim 1, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 1, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 1, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 1, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an impurity; a first electrode on a first area of the semiconductor substrate; SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992354.3.112.144.2274.294.svg 0.5 7.207 Graph Black and white an insulation layer on a second area of the semiconductor substrate; a plurality of metal particles on a surface of the semiconductor substrate between the first area and the second area; a graphene layer on the plurality of metal particles, the graphene layer extending onto the insulation layer, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well, the first well configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the insulation layer, the graphene layer between the second electrode and insulation layer; a gate insulation layer on the graphene layer; and a gate electrode on the gate insulation layer.
The graphene switching device of claim 7, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 7, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 7, further comprising: an insulation material, wherein an upper surface of the first well defines a plurality of grooves, SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992355.3.123.141.2275.291.svg 0.5 7.173 Graph Black and white the insulation material at least partially fills each of the plurality of grooves, and the plurality of metal particles are between the insulation material and the graphene layer.
The graphene switching device of claim 7, wherein each of the plurality of metal particles has a size in a range of about 1 nm and about 10 nm.
The graphene switching device of claim 7, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 7, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 7, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphe n e switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with one of an n-type impurity and a p-type impurity; a first electrode, a gate electrode, and a second electrode spaced apart from each other on the semiconductor substrate; an insulating layer between the second electrode and the substrate; a graphene layer between the second electrode and the insulating layer, the graphene layer extending over a part of the first well, the graphene layer being spaced apart from the first electrode, the first well being configured to form an energy barrier between the graphene layer and the first electrode; and a gate insulating layer between the graphene layer and the gate electrode. Application No. 13/964,353 Attorney Docket No. 2557S I-00 1960-US Page 7 of
The graphene switching device of claim 19, an insulation material, wherein an upper surface that are spaced apart from each other, the insulation grooves, and the plurality of metal particles are layer. *** END CLAIM LISTING *** further comprising: a plurality of metal particles; of the first well defines a plurality of grooves material at least partially fills the plurality of between the insulation material and the graphene
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier (insulation layer on substrate)
Materials described outside the worked examples.
graphene
semiconductor substrate (impurity-doped, first well)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–30 nm |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
METHOD FOR DOPING GRAPHENE, METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE, AND GRAPHENE STRUCTURE COMPRISING SAME
Patent
Atlas literature
Patent
US 9,048,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; 4 Atty. Dkt. No. 2557 …
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
FIGS. 3 C and 3D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 5 is a schematic cross-sectional view of a graphene switching device including a tunable barrier according to example embodiments; [0037]
FIG. 6 is a graph for explaining an operation of metal particles of the graphene switching device of
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992352.17.288.1475.1581.1535.svg 0.2 4.31 Graph Black and white a first electrode on a first area of the semiconductor substrate; an insulation layer on a second area of the semiconductor substrate, the first area and the second area being spaced apart from each other; a graphene layer on the insulation layer, the graphene layer extending onto the semiconductor substrate toward the first electrode, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well of the semiconductor substrate, the first well being configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the graphene layer and the insulation layer; a gate insulation layer on the graphene layer; and SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992353.3.122.145.2274.295.svg 0.5 7.173 Graph Black and white a gate electrode on the gate insulation layer.
The graphene switching device of claim 1, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 1, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 1, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 1, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphene switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with an impurity; a first electrode on a first area of the semiconductor substrate; SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992354.3.112.144.2274.294.svg 0.5 7.207 Graph Black and white an insulation layer on a second area of the semiconductor substrate; a plurality of metal particles on a surface of the semiconductor substrate between the first area and the second area; a graphene layer on the plurality of metal particles, the graphene layer extending onto the insulation layer, the graphene layer being spaced apart from the first electrode, the graphene layer including a lower portion that contacts the first well, the first well configured to form an energy barrier between the graphene layer and the first electrode; a second electrode on the insulation layer, the graphene layer between the second electrode and insulation layer; a gate insulation layer on the graphene layer; and a gate electrode on the gate insulation layer.
The graphene switching device of claim 7, wherein a lower portion of the first electrode contacts the first well.
The graphene switching device of claim 7, wherein a dopant concentration of the first well is higher than a dopant concentration of an other portion of the semiconductor substrate.
The graphene switching device of claim 7, further comprising: an insulation material, wherein an upper surface of the first well defines a plurality of grooves, SVG 13964353.11-14-2014.I₂Q₉G₈RJPXXIFW4.CLM1992355.3.123.141.2275.291.svg 0.5 7.173 Graph Black and white the insulation material at least partially fills each of the plurality of grooves, and the plurality of metal particles are between the insulation material and the graphene layer.
The graphene switching device of claim 7, wherein each of the plurality of metal particles has a size in a range of about 1 nm and about 10 nm.
The graphene switching device of claim 7, wherein the semiconductor substrate includes one of silicon, germanium, silicon-germanium, I II-V group semiconductor, I I -VI semiconductor, semiconductor CNT, MoS2, IZO, and GIZO.
The graphene switching device of claim 7, wherein a gap between the first electrode and the graphene layer is about 1 nm to about 30 nm.
The graphene switching device of claim 7, wherein the energy barrier is configured to vary based on a voltage applied to the gate electrode.
A graphe n e switching device having a tunable barrier, the graphene switching device comprising: a semiconductor substrate, the semiconductor substrate including a first well doped with one of an n-type impurity and a p-type impurity; a first electrode, a gate electrode, and a second electrode spaced apart from each other on the semiconductor substrate; an insulating layer between the second electrode and the substrate; a graphene layer between the second electrode and the insulating layer, the graphene layer extending over a part of the first well, the graphene layer being spaced apart from the first electrode, the first well being configured to form an energy barrier between the graphene layer and the first electrode; and a gate insulating layer between the graphene layer and the gate electrode. Application No. 13/964,353 Attorney Docket No. 2557S I-00 1960-US Page 7 of
The graphene switching device of claim 19, an insulation material, wherein an upper surface that are spaced apart from each other, the insulation grooves, and the plurality of metal particles are layer. *** END CLAIM LISTING *** further comprising: a plurality of metal particles; of the first well defines a plurality of grooves material at least partially fills the plurality of between the insulation material and the graphene
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier (insulation layer on substrate)
Materials described outside the worked examples.
graphene
semiconductor substrate (impurity-doped, first well)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a schematic graph for showing an I-V characteristic of a graphene switching device including a tunable barrier according to example embodiments; …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–30 nm |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
METHOD FOR DOPING GRAPHENE, METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE, AND GRAPHENE STRUCTURE COMPRISING SAME
graphene switching device with tunable barrier (third independent claim variant)
Si
germanium
Ge
silicon-germanium
SiGe
III-V group semiconductor
II-VI semiconductor
semiconductor CNT
MoS₂
IZO
metal particles
GIZO
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
| — |
Thickness | 1–30 nm | — |
Thickness | 1–3 nm | — |
graphene switching device with tunable barrier (third independent claim variant)
Si
germanium
Ge
silicon-germanium
SiGe
III-V group semiconductor
II-VI semiconductor
semiconductor CNT
MoS₂
IZO
metal particles
GIZO
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
| — |
Thickness | 1–30 nm | — |
Thickness | 1–3 nm | — |
graphene switching device with tunable barrier (third independent claim variant)
Si
germanium
Ge
silicon-germanium
SiGe
III-V group semiconductor
II-VI semiconductor
semiconductor CNT
MoS₂
IZO
metal particles
GIZO
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
| — |
Thickness | 1–30 nm | — |
Thickness | 1–3 nm | — |
graphene switching device with tunable barrier (third independent claim variant)
Si
germanium
Ge
silicon-germanium
SiGe
III-V group semiconductor
II-VI semiconductor
semiconductor CNT
MoS₂
IZO
metal particles
GIZO
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
FIG. 4 is a simulation graph showing a variation of a drain current with respect to a variation of a doping concentration of a first well of a graphene …
| — |
Thickness | 1–30 nm | — |
Thickness | 1–3 nm | — |