Patent
US 9,165,896GaN TRANSISTOR WITH IMPROVED BONDING PAD STRUCTURE AND METHOD OF FABRICATING THE SAME
Hae Cheon KIM
US
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Patent
Atlas literature
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US 9,165,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
FIG. 4 is a layout view of the GaN transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN transistor including a bonding pad structure, comprising: an ohmic metal layer formed at edges of a boning pad of a source, a drain, and a gate; 5 a first metal layer formed on the entire bonding pad on which the ohmic metal layer is formed; and a gold plated layer formed on the first metal layer.
The GaN transistor of claim 1, wherein the ohmic metal layer is positioned 10 at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The GaN transistor of claim 1, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer 15 are sequentially stacked.
A method of fabricating a GaN transistor, comprising: forming an ohmic metal layer at edges of a boning pad of a source, a drain, and a gate; 20 performing a thermal treatment on the ohmic metal layer; forming a first metal layer on the entire bonding pad on which the ohmic metal layer is formed; and forming a gold plated layer on the first metal layer.
The method of claim 4, wherein the ohmic metal layer is formed at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The method of claim 4, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer are sequentially stacked.
The method of claim 4, wherein the thermal treatment is performed at a 10 temperature of 900 to 950 C. 11
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with improved bonding pad structure
Materials described outside the worked examples.
ohmic metal layer
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,165,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
FIG. 4 is a layout view of the GaN transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN transistor including a bonding pad structure, comprising: an ohmic metal layer formed at edges of a boning pad of a source, a drain, and a gate; 5 a first metal layer formed on the entire bonding pad on which the ohmic metal layer is formed; and a gold plated layer formed on the first metal layer.
The GaN transistor of claim 1, wherein the ohmic metal layer is positioned 10 at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The GaN transistor of claim 1, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer 15 are sequentially stacked.
A method of fabricating a GaN transistor, comprising: forming an ohmic metal layer at edges of a boning pad of a source, a drain, and a gate; 20 performing a thermal treatment on the ohmic metal layer; forming a first metal layer on the entire bonding pad on which the ohmic metal layer is formed; and forming a gold plated layer on the first metal layer.
The method of claim 4, wherein the ohmic metal layer is formed at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The method of claim 4, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer are sequentially stacked.
The method of claim 4, wherein the thermal treatment is performed at a 10 temperature of 900 to 950 C. 11
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with improved bonding pad structure
Materials described outside the worked examples.
ohmic metal layer
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,165,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
FIG. 4 is a layout view of the GaN transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN transistor including a bonding pad structure, comprising: an ohmic metal layer formed at edges of a boning pad of a source, a drain, and a gate; 5 a first metal layer formed on the entire bonding pad on which the ohmic metal layer is formed; and a gold plated layer formed on the first metal layer.
The GaN transistor of claim 1, wherein the ohmic metal layer is positioned 10 at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The GaN transistor of claim 1, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer 15 are sequentially stacked.
A method of fabricating a GaN transistor, comprising: forming an ohmic metal layer at edges of a boning pad of a source, a drain, and a gate; 20 performing a thermal treatment on the ohmic metal layer; forming a first metal layer on the entire bonding pad on which the ohmic metal layer is formed; and forming a gold plated layer on the first metal layer.
The method of claim 4, wherein the ohmic metal layer is formed at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The method of claim 4, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer are sequentially stacked.
The method of claim 4, wherein the thermal treatment is performed at a 10 temperature of 900 to 950 C. 11
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with improved bonding pad structure
Materials described outside the worked examples.
ohmic metal layer
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,165,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
FIG. 4 is a layout view of the GaN transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN transistor including a bonding pad structure, comprising: an ohmic metal layer formed at edges of a boning pad of a source, a drain, and a gate; 5 a first metal layer formed on the entire bonding pad on which the ohmic metal layer is formed; and a gold plated layer formed on the first metal layer.
The GaN transistor of claim 1, wherein the ohmic metal layer is positioned 10 at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The GaN transistor of claim 1, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer 15 are sequentially stacked.
A method of fabricating a GaN transistor, comprising: forming an ohmic metal layer at edges of a boning pad of a source, a drain, and a gate; 20 performing a thermal treatment on the ohmic metal layer; forming a first metal layer on the entire bonding pad on which the ohmic metal layer is formed; and forming a gold plated layer on the first metal layer.
The method of claim 4, wherein the ohmic metal layer is formed at each of the edges of the bonding pad by an area corresponding to 10 to 50% of an entire area of the bonding pad.
The method of claim 4, wherein the ohmic metal layer has a metal structure in which a titanium layer, an aluminum layer, a nickel layer, and a gold layer are sequentially stacked.
The method of claim 4, wherein the thermal treatment is performed at a 10 temperature of 900 to 950 C. 11
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with improved bonding pad structure
Materials described outside the worked examples.
ohmic metal layer
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross-sectional view illustrating a structure of a GaN transistor; [0019]
Related documents with shared materials, methods, properties, or citations.
gold plated layer
Au
titanium layer
Ti
aluminum layer
Al
nickel layer
Ni
GaN epitaxial substrate
GaN
SiC substrate
SiC
undoped AlGaN layer
AlGaN
silicon nitride layer
Si₃N₄
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
gold plated layer
Au
titanium layer
Ti
aluminum layer
Al
nickel layer
Ni
GaN epitaxial substrate
GaN
SiC substrate
SiC
undoped AlGaN layer
AlGaN
silicon nitride layer
Si₃N₄
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
gold plated layer
Au
titanium layer
Ti
aluminum layer
Al
nickel layer
Ni
GaN epitaxial substrate
GaN
SiC substrate
SiC
undoped AlGaN layer
AlGaN
silicon nitride layer
Si₃N₄
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …
gold plated layer
Au
titanium layer
Ti
aluminum layer
Al
nickel layer
Ni
GaN epitaxial substrate
GaN
SiC substrate
SiC
undoped AlGaN layer
AlGaN
silicon nitride layer
Si₃N₄
FIG. 2 is a cross-sectional view illustrating a bonding pad structure in a GaN transistor in the related art; [0020]
FIG. 3 is a cross-sectional view illustrating a bonding pad structure in a GaN 20 transistor according to an exemplary embodiment of the present invention; and …