Patent
US 8,823,013Second Schottky Contact Metal Layer To Improve GaN Schottky Diode Performance
Ting Gang Zhu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,823,013Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c. Th e propert ies of the second Schottky contact metal 112, n a mely, its high wor f unc tio n, d o mina t es and results in a high reverse bl ocking …
FIG. 2. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.24.314.2234.2240.2279.svg 0.15 6.42 Drawing Black and white SVG …
FIG. 3 c is a cut-away view showing the Schot c ky contact of the diode of F I G. 3 a and the depl eti on r e gion wh e n the device io reverse biase d. (0018]
FIG. 4 a and the depl eti on r egio n of the device SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739090.4.300.629.2254.672.svg 0.143 6.513 Chemistry Black and …
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky contact disposed atop a surface of a semiconductor, said Schottky contact comprising: a first Schottk y contact metal layer disposed atop a first portion of said sem i conductor surface; a nd a second Sch ott ky contact metal layer disposed atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.7.457.868.2244.910.svg 0.14 5.957 Chemistry Black and white least adjoining sai d firs t Schottky contact metal layer, said f t rst Schottky contact metal layer havin g a lower work function than that of said sec on d Scho t tky contact metal layer.
A Schottky contact according to claim 1, wherein sai d semiconductor i ncludes a galliu m nitride-base d semicond uct or.
A Schottky contac t according to claim 1, wherein SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.28.303.2459.2241.2502.svg 0.143 6.46 Chemistry Black and white group c onsisting o f nickel (No), palladium (Pd), a ticanium-tung s ten (Ti W) alloy, t antalu m (T a), rh e nium (R C), ruthenium (Ru) and pla t inum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.32.456.2762.2240.2804.svg 0.14 5.947 Chemistry Black and white said first p ort i on of said se mic onductor s urfa ce includes a plurality of regions space d apart from each other, s aid first-14-Schottky contact metal layer includes a plurality of segments disposed atop each one of said plurality of regions of said fi rst portion of said semiconductor surface wh e reby a given one of said plurality of segments of said first Schot tky contact metal is disposed atop a specific one of said plurality of regions of said first portion of said semiconductor surface, and said second Schortle y contact metal laye r is di s pos e d between each ad j acent pair of sai o: plurality of segments o f said first Schottky contact met al layer.
A Sc h ottky contact according to cla im 1, wher on said semiconductor includes a n itri de-based semiconductor.
A Schottky contact according to clai m 1, wher oin sa id semiconductor includes gal l ium nitride (G aN).
A Schottky contact according to cla xm 1, wherein said second portion of sa i d se mni conductor surface includes an SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.21.307.1929.2243.1971.svg 0.14 6.453 Chemistry Black and white semiconduct o r su rf ace. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.23.458.2082.2242.2124.svg 0.14 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.24.304.2157.2242.2200.svg 0.143 6.46 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.25.302.2232.2246.2274.svg 0.14 6.48 Chemistry Black and white (Mo), and gold (Au).
A Schottky contac t according to claim 8, wherein deplet ion regions form beneath said second Schottky c ontact metal layer in said semiconductor and a spacing betwee n an adjacent pair of said plurality of segments of said first Sch o ttky contact metal layer is sufficiently small such that when said Scnottky contact is reverse bias e d, said depletion regions overlap and c ut of f said plurality of segments of said first S chottky con t act metal layer.
A Schottky contact according to claim 8, wherein each of said plurality of regions has a width within a range of about 1 to 5 pm, and a given pa i r of said plurality of regions is spaced apart from each other by a distance of about 1 to 5 pm.
A Schottky diode, comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.24.612.2150.2250.2193.svg 0.143 5.46 Chemistry Black and white a subs trate; an upper layer of nitride semiconductor di sposod atop at least a portion of said low er la y er of nitride semiconductor, said lower layer of nitride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.29.455.2528.2249.2572.svg 0.147 5.98 Chemistry Black and white semiconductor; a Schottky contact disposed atop said upp e r layer of nitri de semiconductor according to c laim 1, said semiconductor surface being a surface of said upper layer of nitride semiconductor; and -15-a f urther metal contact layer disposed atop sa xa lower layer of nitride semiconductor such that an ohmic conta c t is formed.
A field effect t ransi stor (FET), com prising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.5.614.710.2247.753.svg 0.143 5.443 Chemistry Black and white a substrate; an upper layer of n i tride semiconductor dispos e atop at least a portion of said lower layer of ni t ride semiconductor, said upper laye r being a diffe r ent n 3 tride Semicondnctor rmn an sa i d lower layer so that a hetero junction is t orm o d between said layers; a Schot tky contact disposed atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.13.459.1317.2246.1360.svg 0.143 5.957 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.14.460.1394.2245.1437.svg 0.143 5.95 Chemistry Black and white of nitride semiconductor; and a t urthe r metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic con Lact is fo rmed. 1 3. A method of forming a Schottky contact atop a surrace of a semiconductor, said method comprisin g: forming a first Schottky contact metal laye r atop a first portion of sa i d semiconductor surface; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.23.612.2075.2244.2118.svg 0.143 5.44 Chemistry Black and white of a second portion of said sur f ace and at le as- adj oin i ng said first Schottky contact m etal layer, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.26.459.2302.2243.2345.svg 0.143 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.27.457.2378.2149.2422.svg 0.147 5.64 Chemistry Black and white 14. A method according to cl a i m 13, wherein said semiconductor includes a nitride-based semiconductor. 1 5. A method accordin g to cl a i m 13, wherein sa id semiconducto r inc ludes a gallium nitride-based semiconductor. 16, A method according to cl aim 13, wherein said semiconductor includes gallium nitride (G aN).
A method according to claim 13, further comprising: doping at least a region of said second portion of said semiconductor surface us ing said first S chottky SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.3.462.559.2244.602.svg 0.143 5.94 Chemistry Black and white forming said second Schot t ky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.5.465.711.2183.754.svg 0.143 5.727 Chemistry Black and white etchin g a third por t ion of said sem i condu c tor surface using sa i d second Schottky contact metal as an etch m ask.
A me t hod according to claim 13, wherein said first Schottk y contact metal is at least one metal selected from the group consisting o r al uminum GAl), titanium (Ti), molybdenum (Mo), and gold (Au). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.12.461.1241.2243.1284.svg 0.143 5.94 Chemistry Black and white S chottky contact metal is at least one metal selected from the group con s isting of nickel (N i), palladium (Pd), a ti tanium ' -tun g sten (Ti W) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.17.462.1621.2242.1663.svg 0.14 5.933 Chemistry Black and white portion of said semiconductor su rfac e includes a plurality of regions s p ace d apart from each other, said first Schottk y SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.20.307.1849.2243.1891.svg 0.14 6.453 Chemistry Black and white each one of said plurality of regions of said first portion of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.22.308.2001.2242.2043.svg 0.14 6.447 Chemistry Black and white plurality of se g ments of said first Schottky contact metal is disposed atop a specific one o f said plural it y of regions of said first portion of said s emi co nductor surface, and sa id second Schottky contact metal is disposed between each adjac e nt pair of said plurality of segments of said first Schottky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.29.461.2530.2241.2573.svg 0.143 5.933 Chemistry Black and white regions form beneath said second Schott ry contact metal in said semiconductor and a spacing between an adjacent pair of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.32.306.2758.2240.2800.svg 0.14 6.447 Chemistry Black and white metal is sufficiently small such that when said Schottky contact i s reverse biased, s uc h that when said Schottky-17-contact is revers e bi nded, said depletion regions overlap each other and cut off said plurality of segments of said first Schottky contact metal.
A met hod of form i ng a Schottky diode, said method c ompr sing: rorm i ng a lower layer o f nitri de sem i conductor atop a substrate; forming an upper layer of nitride semiconductor ato p at least a port t on of said lower layer of nit ride sem ic onduc to r, said lower l ayer of nitride sem i conduc tor being more highly doped than said upper layer of nitride semiconductor; forming a Schottky contact atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.19.460.1697.2256.1739.svg 0.14 5.987 Chemistry Black and white semiconductor surface being a sur f ace of said upper layer of nitride semiconductor; and forming a further meta l contact layer atop sa id lower layer of nitride se miconductor. such t haL a n ohmic contact is formed.
A method of forming a field effect trans i stor (FE), sai d method comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.27.616.2302.2256.2347.svg 0.15 5.467 Chemistry Black and white a substrate; forming an upper layer of nitride semiconductor atop at leas t a portion of said lower la y er of nitride semiconduct or, said upper layer n eing a different nitride SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.32.458.2682.2254.2724.svg 0.14 5.987 Chemistry Black and white hete rojunct i on is formed between said layers; forming a Schottky contact atop said upper layer of nitride semiconductor according to cl aim 13, s a id-18-semiconductor surface being a s urface of said upper layer of nitride semiconductor; and forming a further metal contact layer disposed atop said lower la y er of nitride semiconductor such t h at an ohmic contact is formed.
A method of improving metal adhesion in a Schottky contact, said method comprising: providing a semiconductor structure; forming a first Schottky cont act metal layer atop at least a por t ion of a surface o f said semiconductor structure, said first Schottky contact m eta l layer including a higher work fun cti on metal; annealing said first Schottky contact m etal layer at a temperature of at least 300 * C and at most 500 Q C; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.15.618.1473.2250.1515.svg 0.14 5.44 Chemistry Black and white at leasr a portion of s aid first Schottky c ont act metal layer.
A method accor oi ng to claim 26, wherein said first S cho t ky con t act metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.26.306.2305.2247.2347.svg 0.14 6.47 Chemistry Black and white titanium-tungsten (TiW) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt).
A method according to claim 26, wherein said second Schot t ky contac t metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.31.305.2684.2243.2726.svg 0.14 6.46 Chemistry Black and white titanium-tungsten (TiW) alloy, aluminum (Al), t i tanium (Ti), molybdenum (M o), and gold (Au). -19- 32. A method of fo rming a Schottky diode, said method com prising: forming a lower layer of nitride semiconduct or a Lop a s u bst rat e; formi ng an u pper la y er of nitride semiconductor atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.7.466.791.2248.833.svg 0.14 5.94 Chemistry Black and white semiconductor, said lower layer of ri tride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.9.464.943.2248.987.svg 0.147 5.947 Chemistry Black and white semiconductor; torming a Schottky contact atop said upper la ye r of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.12.466.1170.2250.1212.svg 0.14 5.947 Chemistry Black and white semiconductor surface being a surface of said upper layer of nitride semiconductor; and fo rming a further metal contact la y er atop said lower layer of nitride semiconductor such tha t an ohmic contact is fo rmed.
A method according to c laim 26, wherein said semiconductor includes a nitride-based semiconductor.
A method according to cl aim 26, wherein said semiconductor includes a gallium n it ride- b ased s emiconductor.
A method according to cl aim 26, wherein said semiconductor includes gallium nitride (G aN).
A method of forming a field effect transistor (F ET), said method comprising: for ming a l ower layer of nitride se m iconductor atop a subst rate; forming an upper layer of nitride sem i conductor atop at le ast a portion of said low e r layer of nitride sem i conductor, said upper layer being a dif f erent nitride semiconductor than said lower la y er to form a heterojun ct i on betwee n said layers; forming a Schottky contact atop said upper la y er of nitride semiconductor according to cl aim 26, s aid sem iconductor surface being a surface of said up per layer of ni t ri de se mic onduc tor; and for mi ng a further metal contact layer atop said lower layer of ni t ride semiconductor such that a n ohmic cont4acL is for m ed. 3 4. A Schottky contact having improved metal adhes aon, said Schottky contact comprisin g: -20- a first Schottky con tac t m et al layer d i sposed atop at least a portion of a surface of a semiconductor structure, said first Schottky cont a ct metal layer including a higher work function metal an d being annealed at a temperature of a t least 300 *C and at most 500 *C; and a second Scho t tky contact metal la y er disposed atop at least a portion of said f i rst Schottky contact metal layer.
A Schottky contact acco r din g to claim 34, wherein said semiconductor includes a nitride-based semic o nduc tor.
A S c hottky contact according to claim 34, wherein said s emic onductor in clu des a gallium nitride-based sem i conduct or.
A Scnottky contact according to claim 34, wherein said semiconductor includes gallium nitride (G aN).
A Schottky contact according Lo claim 34, wh erein said first Schottky contact metal is at least one meta l selected from the group cons ist ing of nickel (N i), palladium (Pd), a titanium-tungsten (T₁W) alloy, tantalum (T a), rhon ium (Re), ruthenium (Ru) and platinum (Pt).
A Schottky contact according to claim 34, wherein said s econd Sc h ottky contact metal is at least one met al SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739106.24.312.2153.2268.2195.svg 0.14 6.52 Chemistry Black and white (Pd), a tita nium- tungsten (Ti W) alloy, a l umi num (A l), titanium (Ti), molybdenum (Mo), and gold (Au).
A Schottky diode, comprising: a lower layer of nitride s emiconductor disposed a top a substrate; an upper layer of nitride sem i conductor d isposed atop at l e ast a portion of sa i d lower layer of nitride semiconductor, said lower layer of nitride semiconduc tor being mo t e h i ghly doped than said upper layer of nitride sem i conductor; -21- a Schottky contact disposed atop said upper layer of nitride semiconductor according to cl aim 3 4, said semiconductor surface being a surface of said upper layer of nitride sem ic onductor; and a further metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic contact is formed.
A field effect transistor (F ET), comprising: a lower lay er of n itride semiconductor disposed atop a su n strat e; an upper layer of nitride semi c onductor disposed at op a t least a po x tion of said lower layer of ni t ride semiconductor, said upper layer being a different nitride semiconductor than said lower layer to form a heterojunction between said layers; a Scho tt k y contact disposed atop said upper layer of nitri de semic o nduc L or according Lo c laim 34, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739107.18.461.1697.2244.1739.svg 0.14 5.943 Chemistry Black and white of nitride semiconductor; and a further metal contact layer disposed atop said low er layer of nitride semiconductor such t hat an ohmic contac t is formed. -22-SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.33.302.2915.2234.2959.svg 0.147 6.44 Drawing Black and white Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
Schottky contact
Schottky diode
Materials described outside the worked examples.
first Schottky contact metal layer (lower work function)
second Schottky contact metal layer (higher work function)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,823,013Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c. Th e propert ies of the second Schottky contact metal 112, n a mely, its high wor f unc tio n, d o mina t es and results in a high reverse bl ocking …
FIG. 2. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.24.314.2234.2240.2279.svg 0.15 6.42 Drawing Black and white SVG …
FIG. 3 c is a cut-away view showing the Schot c ky contact of the diode of F I G. 3 a and the depl eti on r e gion wh e n the device io reverse biase d. (0018]
FIG. 4 a and the depl eti on r egio n of the device SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739090.4.300.629.2254.672.svg 0.143 6.513 Chemistry Black and …
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky contact disposed atop a surface of a semiconductor, said Schottky contact comprising: a first Schottk y contact metal layer disposed atop a first portion of said sem i conductor surface; a nd a second Sch ott ky contact metal layer disposed atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.7.457.868.2244.910.svg 0.14 5.957 Chemistry Black and white least adjoining sai d firs t Schottky contact metal layer, said f t rst Schottky contact metal layer havin g a lower work function than that of said sec on d Scho t tky contact metal layer.
A Schottky contact according to claim 1, wherein sai d semiconductor i ncludes a galliu m nitride-base d semicond uct or.
A Schottky contac t according to claim 1, wherein SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.28.303.2459.2241.2502.svg 0.143 6.46 Chemistry Black and white group c onsisting o f nickel (No), palladium (Pd), a ticanium-tung s ten (Ti W) alloy, t antalu m (T a), rh e nium (R C), ruthenium (Ru) and pla t inum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.32.456.2762.2240.2804.svg 0.14 5.947 Chemistry Black and white said first p ort i on of said se mic onductor s urfa ce includes a plurality of regions space d apart from each other, s aid first-14-Schottky contact metal layer includes a plurality of segments disposed atop each one of said plurality of regions of said fi rst portion of said semiconductor surface wh e reby a given one of said plurality of segments of said first Schot tky contact metal is disposed atop a specific one of said plurality of regions of said first portion of said semiconductor surface, and said second Schortle y contact metal laye r is di s pos e d between each ad j acent pair of sai o: plurality of segments o f said first Schottky contact met al layer.
A Sc h ottky contact according to cla im 1, wher on said semiconductor includes a n itri de-based semiconductor.
A Schottky contact according to clai m 1, wher oin sa id semiconductor includes gal l ium nitride (G aN).
A Schottky contact according to cla xm 1, wherein said second portion of sa i d se mni conductor surface includes an SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.21.307.1929.2243.1971.svg 0.14 6.453 Chemistry Black and white semiconduct o r su rf ace. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.23.458.2082.2242.2124.svg 0.14 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.24.304.2157.2242.2200.svg 0.143 6.46 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.25.302.2232.2246.2274.svg 0.14 6.48 Chemistry Black and white (Mo), and gold (Au).
A Schottky contac t according to claim 8, wherein deplet ion regions form beneath said second Schottky c ontact metal layer in said semiconductor and a spacing betwee n an adjacent pair of said plurality of segments of said first Sch o ttky contact metal layer is sufficiently small such that when said Scnottky contact is reverse bias e d, said depletion regions overlap and c ut of f said plurality of segments of said first S chottky con t act metal layer.
A Schottky contact according to claim 8, wherein each of said plurality of regions has a width within a range of about 1 to 5 pm, and a given pa i r of said plurality of regions is spaced apart from each other by a distance of about 1 to 5 pm.
A Schottky diode, comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.24.612.2150.2250.2193.svg 0.143 5.46 Chemistry Black and white a subs trate; an upper layer of nitride semiconductor di sposod atop at least a portion of said low er la y er of nitride semiconductor, said lower layer of nitride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.29.455.2528.2249.2572.svg 0.147 5.98 Chemistry Black and white semiconductor; a Schottky contact disposed atop said upp e r layer of nitri de semiconductor according to c laim 1, said semiconductor surface being a surface of said upper layer of nitride semiconductor; and -15-a f urther metal contact layer disposed atop sa xa lower layer of nitride semiconductor such that an ohmic conta c t is formed.
A field effect t ransi stor (FET), com prising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.5.614.710.2247.753.svg 0.143 5.443 Chemistry Black and white a substrate; an upper layer of n i tride semiconductor dispos e atop at least a portion of said lower layer of ni t ride semiconductor, said upper laye r being a diffe r ent n 3 tride Semicondnctor rmn an sa i d lower layer so that a hetero junction is t orm o d between said layers; a Schot tky contact disposed atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.13.459.1317.2246.1360.svg 0.143 5.957 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.14.460.1394.2245.1437.svg 0.143 5.95 Chemistry Black and white of nitride semiconductor; and a t urthe r metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic con Lact is fo rmed. 1 3. A method of forming a Schottky contact atop a surrace of a semiconductor, said method comprisin g: forming a first Schottky contact metal laye r atop a first portion of sa i d semiconductor surface; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.23.612.2075.2244.2118.svg 0.143 5.44 Chemistry Black and white of a second portion of said sur f ace and at le as- adj oin i ng said first Schottky contact m etal layer, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.26.459.2302.2243.2345.svg 0.143 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.27.457.2378.2149.2422.svg 0.147 5.64 Chemistry Black and white 14. A method according to cl a i m 13, wherein said semiconductor includes a nitride-based semiconductor. 1 5. A method accordin g to cl a i m 13, wherein sa id semiconducto r inc ludes a gallium nitride-based semiconductor. 16, A method according to cl aim 13, wherein said semiconductor includes gallium nitride (G aN).
A method according to claim 13, further comprising: doping at least a region of said second portion of said semiconductor surface us ing said first S chottky SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.3.462.559.2244.602.svg 0.143 5.94 Chemistry Black and white forming said second Schot t ky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.5.465.711.2183.754.svg 0.143 5.727 Chemistry Black and white etchin g a third por t ion of said sem i condu c tor surface using sa i d second Schottky contact metal as an etch m ask.
A me t hod according to claim 13, wherein said first Schottk y contact metal is at least one metal selected from the group consisting o r al uminum GAl), titanium (Ti), molybdenum (Mo), and gold (Au). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.12.461.1241.2243.1284.svg 0.143 5.94 Chemistry Black and white S chottky contact metal is at least one metal selected from the group con s isting of nickel (N i), palladium (Pd), a ti tanium ' -tun g sten (Ti W) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.17.462.1621.2242.1663.svg 0.14 5.933 Chemistry Black and white portion of said semiconductor su rfac e includes a plurality of regions s p ace d apart from each other, said first Schottk y SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.20.307.1849.2243.1891.svg 0.14 6.453 Chemistry Black and white each one of said plurality of regions of said first portion of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.22.308.2001.2242.2043.svg 0.14 6.447 Chemistry Black and white plurality of se g ments of said first Schottky contact metal is disposed atop a specific one o f said plural it y of regions of said first portion of said s emi co nductor surface, and sa id second Schottky contact metal is disposed between each adjac e nt pair of said plurality of segments of said first Schottky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.29.461.2530.2241.2573.svg 0.143 5.933 Chemistry Black and white regions form beneath said second Schott ry contact metal in said semiconductor and a spacing between an adjacent pair of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.32.306.2758.2240.2800.svg 0.14 6.447 Chemistry Black and white metal is sufficiently small such that when said Schottky contact i s reverse biased, s uc h that when said Schottky-17-contact is revers e bi nded, said depletion regions overlap each other and cut off said plurality of segments of said first Schottky contact metal.
A met hod of form i ng a Schottky diode, said method c ompr sing: rorm i ng a lower layer o f nitri de sem i conductor atop a substrate; forming an upper layer of nitride semiconductor ato p at least a port t on of said lower layer of nit ride sem ic onduc to r, said lower l ayer of nitride sem i conduc tor being more highly doped than said upper layer of nitride semiconductor; forming a Schottky contact atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.19.460.1697.2256.1739.svg 0.14 5.987 Chemistry Black and white semiconductor surface being a sur f ace of said upper layer of nitride semiconductor; and forming a further meta l contact layer atop sa id lower layer of nitride se miconductor. such t haL a n ohmic contact is formed.
A method of forming a field effect trans i stor (FE), sai d method comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.27.616.2302.2256.2347.svg 0.15 5.467 Chemistry Black and white a substrate; forming an upper layer of nitride semiconductor atop at leas t a portion of said lower la y er of nitride semiconduct or, said upper layer n eing a different nitride SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.32.458.2682.2254.2724.svg 0.14 5.987 Chemistry Black and white hete rojunct i on is formed between said layers; forming a Schottky contact atop said upper layer of nitride semiconductor according to cl aim 13, s a id-18-semiconductor surface being a s urface of said upper layer of nitride semiconductor; and forming a further metal contact layer disposed atop said lower la y er of nitride semiconductor such t h at an ohmic contact is formed.
A method of improving metal adhesion in a Schottky contact, said method comprising: providing a semiconductor structure; forming a first Schottky cont act metal layer atop at least a por t ion of a surface o f said semiconductor structure, said first Schottky contact m eta l layer including a higher work fun cti on metal; annealing said first Schottky contact m etal layer at a temperature of at least 300 * C and at most 500 Q C; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.15.618.1473.2250.1515.svg 0.14 5.44 Chemistry Black and white at leasr a portion of s aid first Schottky c ont act metal layer.
A method accor oi ng to claim 26, wherein said first S cho t ky con t act metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.26.306.2305.2247.2347.svg 0.14 6.47 Chemistry Black and white titanium-tungsten (TiW) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt).
A method according to claim 26, wherein said second Schot t ky contac t metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.31.305.2684.2243.2726.svg 0.14 6.46 Chemistry Black and white titanium-tungsten (TiW) alloy, aluminum (Al), t i tanium (Ti), molybdenum (M o), and gold (Au). -19- 32. A method of fo rming a Schottky diode, said method com prising: forming a lower layer of nitride semiconduct or a Lop a s u bst rat e; formi ng an u pper la y er of nitride semiconductor atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.7.466.791.2248.833.svg 0.14 5.94 Chemistry Black and white semiconductor, said lower layer of ri tride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.9.464.943.2248.987.svg 0.147 5.947 Chemistry Black and white semiconductor; torming a Schottky contact atop said upper la ye r of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.12.466.1170.2250.1212.svg 0.14 5.947 Chemistry Black and white semiconductor surface being a surface of said upper layer of nitride semiconductor; and fo rming a further metal contact la y er atop said lower layer of nitride semiconductor such tha t an ohmic contact is fo rmed.
A method according to c laim 26, wherein said semiconductor includes a nitride-based semiconductor.
A method according to cl aim 26, wherein said semiconductor includes a gallium n it ride- b ased s emiconductor.
A method according to cl aim 26, wherein said semiconductor includes gallium nitride (G aN).
A method of forming a field effect transistor (F ET), said method comprising: for ming a l ower layer of nitride se m iconductor atop a subst rate; forming an upper layer of nitride sem i conductor atop at le ast a portion of said low e r layer of nitride sem i conductor, said upper layer being a dif f erent nitride semiconductor than said lower la y er to form a heterojun ct i on betwee n said layers; forming a Schottky contact atop said upper la y er of nitride semiconductor according to cl aim 26, s aid sem iconductor surface being a surface of said up per layer of ni t ri de se mic onduc tor; and for mi ng a further metal contact layer atop said lower layer of ni t ride semiconductor such that a n ohmic cont4acL is for m ed. 3 4. A Schottky contact having improved metal adhes aon, said Schottky contact comprisin g: -20- a first Schottky con tac t m et al layer d i sposed atop at least a portion of a surface of a semiconductor structure, said first Schottky cont a ct metal layer including a higher work function metal an d being annealed at a temperature of a t least 300 *C and at most 500 *C; and a second Scho t tky contact metal la y er disposed atop at least a portion of said f i rst Schottky contact metal layer.
A Schottky contact acco r din g to claim 34, wherein said semiconductor includes a nitride-based semic o nduc tor.
A S c hottky contact according to claim 34, wherein said s emic onductor in clu des a gallium nitride-based sem i conduct or.
A Scnottky contact according to claim 34, wherein said semiconductor includes gallium nitride (G aN).
A Schottky contact according Lo claim 34, wh erein said first Schottky contact metal is at least one meta l selected from the group cons ist ing of nickel (N i), palladium (Pd), a titanium-tungsten (T₁W) alloy, tantalum (T a), rhon ium (Re), ruthenium (Ru) and platinum (Pt).
A Schottky contact according to claim 34, wherein said s econd Sc h ottky contact metal is at least one met al SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739106.24.312.2153.2268.2195.svg 0.14 6.52 Chemistry Black and white (Pd), a tita nium- tungsten (Ti W) alloy, a l umi num (A l), titanium (Ti), molybdenum (Mo), and gold (Au).
A Schottky diode, comprising: a lower layer of nitride s emiconductor disposed a top a substrate; an upper layer of nitride sem i conductor d isposed atop at l e ast a portion of sa i d lower layer of nitride semiconductor, said lower layer of nitride semiconduc tor being mo t e h i ghly doped than said upper layer of nitride sem i conductor; -21- a Schottky contact disposed atop said upper layer of nitride semiconductor according to cl aim 3 4, said semiconductor surface being a surface of said upper layer of nitride sem ic onductor; and a further metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic contact is formed.
A field effect transistor (F ET), comprising: a lower lay er of n itride semiconductor disposed atop a su n strat e; an upper layer of nitride semi c onductor disposed at op a t least a po x tion of said lower layer of ni t ride semiconductor, said upper layer being a different nitride semiconductor than said lower layer to form a heterojunction between said layers; a Scho tt k y contact disposed atop said upper layer of nitri de semic o nduc L or according Lo c laim 34, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739107.18.461.1697.2244.1739.svg 0.14 5.943 Chemistry Black and white of nitride semiconductor; and a further metal contact layer disposed atop said low er layer of nitride semiconductor such t hat an ohmic contac t is formed. -22-SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.33.302.2915.2234.2959.svg 0.147 6.44 Drawing Black and white Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
Schottky contact
Schottky diode
Materials described outside the worked examples.
first Schottky contact metal layer (lower work function)
second Schottky contact metal layer (higher work function)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,823,013Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c. Th e propert ies of the second Schottky contact metal 112, n a mely, its high wor f unc tio n, d o mina t es and results in a high reverse bl ocking …
FIG. 2. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.24.314.2234.2240.2279.svg 0.15 6.42 Drawing Black and white SVG …
FIG. 3 c is a cut-away view showing the Schot c ky contact of the diode of F I G. 3 a and the depl eti on r e gion wh e n the device io reverse biase d. (0018]
FIG. 4 a and the depl eti on r egio n of the device SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739090.4.300.629.2254.672.svg 0.143 6.513 Chemistry Black and …
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky contact disposed atop a surface of a semiconductor, said Schottky contact comprising: a first Schottk y contact metal layer disposed atop a first portion of said sem i conductor surface; a nd a second Sch ott ky contact metal layer disposed atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.7.457.868.2244.910.svg 0.14 5.957 Chemistry Black and white least adjoining sai d firs t Schottky contact metal layer, said f t rst Schottky contact metal layer havin g a lower work function than that of said sec on d Scho t tky contact metal layer.
A Schottky contact according to claim 1, wherein sai d semiconductor i ncludes a galliu m nitride-base d semicond uct or.
A Schottky contac t according to claim 1, wherein SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.28.303.2459.2241.2502.svg 0.143 6.46 Chemistry Black and white group c onsisting o f nickel (No), palladium (Pd), a ticanium-tung s ten (Ti W) alloy, t antalu m (T a), rh e nium (R C), ruthenium (Ru) and pla t inum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.32.456.2762.2240.2804.svg 0.14 5.947 Chemistry Black and white said first p ort i on of said se mic onductor s urfa ce includes a plurality of regions space d apart from each other, s aid first-14-Schottky contact metal layer includes a plurality of segments disposed atop each one of said plurality of regions of said fi rst portion of said semiconductor surface wh e reby a given one of said plurality of segments of said first Schot tky contact metal is disposed atop a specific one of said plurality of regions of said first portion of said semiconductor surface, and said second Schortle y contact metal laye r is di s pos e d between each ad j acent pair of sai o: plurality of segments o f said first Schottky contact met al layer.
A Sc h ottky contact according to cla im 1, wher on said semiconductor includes a n itri de-based semiconductor.
A Schottky contact according to clai m 1, wher oin sa id semiconductor includes gal l ium nitride (G aN).
A Schottky contact according to cla xm 1, wherein said second portion of sa i d se mni conductor surface includes an SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.21.307.1929.2243.1971.svg 0.14 6.453 Chemistry Black and white semiconduct o r su rf ace. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.23.458.2082.2242.2124.svg 0.14 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.24.304.2157.2242.2200.svg 0.143 6.46 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.25.302.2232.2246.2274.svg 0.14 6.48 Chemistry Black and white (Mo), and gold (Au).
A Schottky contac t according to claim 8, wherein deplet ion regions form beneath said second Schottky c ontact metal layer in said semiconductor and a spacing betwee n an adjacent pair of said plurality of segments of said first Sch o ttky contact metal layer is sufficiently small such that when said Scnottky contact is reverse bias e d, said depletion regions overlap and c ut of f said plurality of segments of said first S chottky con t act metal layer.
A Schottky contact according to claim 8, wherein each of said plurality of regions has a width within a range of about 1 to 5 pm, and a given pa i r of said plurality of regions is spaced apart from each other by a distance of about 1 to 5 pm.
A Schottky diode, comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.24.612.2150.2250.2193.svg 0.143 5.46 Chemistry Black and white a subs trate; an upper layer of nitride semiconductor di sposod atop at least a portion of said low er la y er of nitride semiconductor, said lower layer of nitride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.29.455.2528.2249.2572.svg 0.147 5.98 Chemistry Black and white semiconductor; a Schottky contact disposed atop said upp e r layer of nitri de semiconductor according to c laim 1, said semiconductor surface being a surface of said upper layer of nitride semiconductor; and -15-a f urther metal contact layer disposed atop sa xa lower layer of nitride semiconductor such that an ohmic conta c t is formed.
A field effect t ransi stor (FET), com prising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.5.614.710.2247.753.svg 0.143 5.443 Chemistry Black and white a substrate; an upper layer of n i tride semiconductor dispos e atop at least a portion of said lower layer of ni t ride semiconductor, said upper laye r being a diffe r ent n 3 tride Semicondnctor rmn an sa i d lower layer so that a hetero junction is t orm o d between said layers; a Schot tky contact disposed atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.13.459.1317.2246.1360.svg 0.143 5.957 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.14.460.1394.2245.1437.svg 0.143 5.95 Chemistry Black and white of nitride semiconductor; and a t urthe r metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic con Lact is fo rmed. 1 3. A method of forming a Schottky contact atop a surrace of a semiconductor, said method comprisin g: forming a first Schottky contact metal laye r atop a first portion of sa i d semiconductor surface; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.23.612.2075.2244.2118.svg 0.143 5.44 Chemistry Black and white of a second portion of said sur f ace and at le as- adj oin i ng said first Schottky contact m etal layer, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.26.459.2302.2243.2345.svg 0.143 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.27.457.2378.2149.2422.svg 0.147 5.64 Chemistry Black and white 14. A method according to cl a i m 13, wherein said semiconductor includes a nitride-based semiconductor. 1 5. A method accordin g to cl a i m 13, wherein sa id semiconducto r inc ludes a gallium nitride-based semiconductor. 16, A method according to cl aim 13, wherein said semiconductor includes gallium nitride (G aN).
A method according to claim 13, further comprising: doping at least a region of said second portion of said semiconductor surface us ing said first S chottky SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.3.462.559.2244.602.svg 0.143 5.94 Chemistry Black and white forming said second Schot t ky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.5.465.711.2183.754.svg 0.143 5.727 Chemistry Black and white etchin g a third por t ion of said sem i condu c tor surface using sa i d second Schottky contact metal as an etch m ask.
A me t hod according to claim 13, wherein said first Schottk y contact metal is at least one metal selected from the group consisting o r al uminum GAl), titanium (Ti), molybdenum (Mo), and gold (Au). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.12.461.1241.2243.1284.svg 0.143 5.94 Chemistry Black and white S chottky contact metal is at least one metal selected from the group con s isting of nickel (N i), palladium (Pd), a ti tanium ' -tun g sten (Ti W) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.17.462.1621.2242.1663.svg 0.14 5.933 Chemistry Black and white portion of said semiconductor su rfac e includes a plurality of regions s p ace d apart from each other, said first Schottk y SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.20.307.1849.2243.1891.svg 0.14 6.453 Chemistry Black and white each one of said plurality of regions of said first portion of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.22.308.2001.2242.2043.svg 0.14 6.447 Chemistry Black and white plurality of se g ments of said first Schottky contact metal is disposed atop a specific one o f said plural it y of regions of said first portion of said s emi co nductor surface, and sa id second Schottky contact metal is disposed between each adjac e nt pair of said plurality of segments of said first Schottky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.29.461.2530.2241.2573.svg 0.143 5.933 Chemistry Black and white regions form beneath said second Schott ry contact metal in said semiconductor and a spacing between an adjacent pair of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.32.306.2758.2240.2800.svg 0.14 6.447 Chemistry Black and white metal is sufficiently small such that when said Schottky contact i s reverse biased, s uc h that when said Schottky-17-contact is revers e bi nded, said depletion regions overlap each other and cut off said plurality of segments of said first Schottky contact metal.
A met hod of form i ng a Schottky diode, said method c ompr sing: rorm i ng a lower layer o f nitri de sem i conductor atop a substrate; forming an upper layer of nitride semiconductor ato p at least a port t on of said lower layer of nit ride sem ic onduc to r, said lower l ayer of nitride sem i conduc tor being more highly doped than said upper layer of nitride semiconductor; forming a Schottky contact atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.19.460.1697.2256.1739.svg 0.14 5.987 Chemistry Black and white semiconductor surface being a sur f ace of said upper layer of nitride semiconductor; and forming a further meta l contact layer atop sa id lower layer of nitride se miconductor. such t haL a n ohmic contact is formed.
A method of forming a field effect trans i stor (FE), sai d method comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.27.616.2302.2256.2347.svg 0.15 5.467 Chemistry Black and white a substrate; forming an upper layer of nitride semiconductor atop at leas t a portion of said lower la y er of nitride semiconduct or, said upper layer n eing a different nitride SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.32.458.2682.2254.2724.svg 0.14 5.987 Chemistry Black and white hete rojunct i on is formed between said layers; forming a Schottky contact atop said upper layer of nitride semiconductor according to cl aim 13, s a id-18-semiconductor surface being a s urface of said upper layer of nitride semiconductor; and forming a further metal contact layer disposed atop said lower la y er of nitride semiconductor such t h at an ohmic contact is formed.
A method of improving metal adhesion in a Schottky contact, said method comprising: providing a semiconductor structure; forming a first Schottky cont act metal layer atop at least a por t ion of a surface o f said semiconductor structure, said first Schottky contact m eta l layer including a higher work fun cti on metal; annealing said first Schottky contact m etal layer at a temperature of at least 300 * C and at most 500 Q C; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.15.618.1473.2250.1515.svg 0.14 5.44 Chemistry Black and white at leasr a portion of s aid first Schottky c ont act metal layer.
A method accor oi ng to claim 26, wherein said first S cho t ky con t act metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.26.306.2305.2247.2347.svg 0.14 6.47 Chemistry Black and white titanium-tungsten (TiW) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt).
A method according to claim 26, wherein said second Schot t ky contac t metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.31.305.2684.2243.2726.svg 0.14 6.46 Chemistry Black and white titanium-tungsten (TiW) alloy, aluminum (Al), t i tanium (Ti), molybdenum (M o), and gold (Au). -19- 32. A method of fo rming a Schottky diode, said method com prising: forming a lower layer of nitride semiconduct or a Lop a s u bst rat e; formi ng an u pper la y er of nitride semiconductor atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.7.466.791.2248.833.svg 0.14 5.94 Chemistry Black and white semiconductor, said lower layer of ri tride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.9.464.943.2248.987.svg 0.147 5.947 Chemistry Black and white semiconductor; torming a Schottky contact atop said upper la ye r of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.12.466.1170.2250.1212.svg 0.14 5.947 Chemistry Black and white semiconductor surface being a surface of said upper layer of nitride semiconductor; and fo rming a further metal contact la y er atop said lower layer of nitride semiconductor such tha t an ohmic contact is fo rmed.
A method according to c laim 26, wherein said semiconductor includes a nitride-based semiconductor.
A method according to cl aim 26, wherein said semiconductor includes a gallium n it ride- b ased s emiconductor.
A method according to cl aim 26, wherein said semiconductor includes gallium nitride (G aN).
A method of forming a field effect transistor (F ET), said method comprising: for ming a l ower layer of nitride se m iconductor atop a subst rate; forming an upper layer of nitride sem i conductor atop at le ast a portion of said low e r layer of nitride sem i conductor, said upper layer being a dif f erent nitride semiconductor than said lower la y er to form a heterojun ct i on betwee n said layers; forming a Schottky contact atop said upper la y er of nitride semiconductor according to cl aim 26, s aid sem iconductor surface being a surface of said up per layer of ni t ri de se mic onduc tor; and for mi ng a further metal contact layer atop said lower layer of ni t ride semiconductor such that a n ohmic cont4acL is for m ed. 3 4. A Schottky contact having improved metal adhes aon, said Schottky contact comprisin g: -20- a first Schottky con tac t m et al layer d i sposed atop at least a portion of a surface of a semiconductor structure, said first Schottky cont a ct metal layer including a higher work function metal an d being annealed at a temperature of a t least 300 *C and at most 500 *C; and a second Scho t tky contact metal la y er disposed atop at least a portion of said f i rst Schottky contact metal layer.
A Schottky contact acco r din g to claim 34, wherein said semiconductor includes a nitride-based semic o nduc tor.
A S c hottky contact according to claim 34, wherein said s emic onductor in clu des a gallium nitride-based sem i conduct or.
A Scnottky contact according to claim 34, wherein said semiconductor includes gallium nitride (G aN).
A Schottky contact according Lo claim 34, wh erein said first Schottky contact metal is at least one meta l selected from the group cons ist ing of nickel (N i), palladium (Pd), a titanium-tungsten (T₁W) alloy, tantalum (T a), rhon ium (Re), ruthenium (Ru) and platinum (Pt).
A Schottky contact according to claim 34, wherein said s econd Sc h ottky contact metal is at least one met al SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739106.24.312.2153.2268.2195.svg 0.14 6.52 Chemistry Black and white (Pd), a tita nium- tungsten (Ti W) alloy, a l umi num (A l), titanium (Ti), molybdenum (Mo), and gold (Au).
A Schottky diode, comprising: a lower layer of nitride s emiconductor disposed a top a substrate; an upper layer of nitride sem i conductor d isposed atop at l e ast a portion of sa i d lower layer of nitride semiconductor, said lower layer of nitride semiconduc tor being mo t e h i ghly doped than said upper layer of nitride sem i conductor; -21- a Schottky contact disposed atop said upper layer of nitride semiconductor according to cl aim 3 4, said semiconductor surface being a surface of said upper layer of nitride sem ic onductor; and a further metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic contact is formed.
A field effect transistor (F ET), comprising: a lower lay er of n itride semiconductor disposed atop a su n strat e; an upper layer of nitride semi c onductor disposed at op a t least a po x tion of said lower layer of ni t ride semiconductor, said upper layer being a different nitride semiconductor than said lower layer to form a heterojunction between said layers; a Scho tt k y contact disposed atop said upper layer of nitri de semic o nduc L or according Lo c laim 34, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739107.18.461.1697.2244.1739.svg 0.14 5.943 Chemistry Black and white of nitride semiconductor; and a further metal contact layer disposed atop said low er layer of nitride semiconductor such t hat an ohmic contac t is formed. -22-SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.33.302.2915.2234.2959.svg 0.147 6.44 Drawing Black and white Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
Schottky contact
Schottky diode
Materials described outside the worked examples.
first Schottky contact metal layer (lower work function)
second Schottky contact metal layer (higher work function)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,823,013Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c. Th e propert ies of the second Schottky contact metal 112, n a mely, its high wor f unc tio n, d o mina t es and results in a high reverse bl ocking …
FIG. 2. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.24.314.2234.2240.2279.svg 0.15 6.42 Drawing Black and white SVG …
FIG. 3 c is a cut-away view showing the Schot c ky contact of the diode of F I G. 3 a and the depl eti on r e gion wh e n the device io reverse biase d. (0018]
FIG. 4 a and the depl eti on r egio n of the device SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739090.4.300.629.2254.672.svg 0.143 6.513 Chemistry Black and …
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky contact disposed atop a surface of a semiconductor, said Schottky contact comprising: a first Schottk y contact metal layer disposed atop a first portion of said sem i conductor surface; a nd a second Sch ott ky contact metal layer disposed atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.7.457.868.2244.910.svg 0.14 5.957 Chemistry Black and white least adjoining sai d firs t Schottky contact metal layer, said f t rst Schottky contact metal layer havin g a lower work function than that of said sec on d Scho t tky contact metal layer.
A Schottky contact according to claim 1, wherein sai d semiconductor i ncludes a galliu m nitride-base d semicond uct or.
A Schottky contac t according to claim 1, wherein SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.28.303.2459.2241.2502.svg 0.143 6.46 Chemistry Black and white group c onsisting o f nickel (No), palladium (Pd), a ticanium-tung s ten (Ti W) alloy, t antalu m (T a), rh e nium (R C), ruthenium (Ru) and pla t inum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.32.456.2762.2240.2804.svg 0.14 5.947 Chemistry Black and white said first p ort i on of said se mic onductor s urfa ce includes a plurality of regions space d apart from each other, s aid first-14-Schottky contact metal layer includes a plurality of segments disposed atop each one of said plurality of regions of said fi rst portion of said semiconductor surface wh e reby a given one of said plurality of segments of said first Schot tky contact metal is disposed atop a specific one of said plurality of regions of said first portion of said semiconductor surface, and said second Schortle y contact metal laye r is di s pos e d between each ad j acent pair of sai o: plurality of segments o f said first Schottky contact met al layer.
A Sc h ottky contact according to cla im 1, wher on said semiconductor includes a n itri de-based semiconductor.
A Schottky contact according to clai m 1, wher oin sa id semiconductor includes gal l ium nitride (G aN).
A Schottky contact according to cla xm 1, wherein said second portion of sa i d se mni conductor surface includes an SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.21.307.1929.2243.1971.svg 0.14 6.453 Chemistry Black and white semiconduct o r su rf ace. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.23.458.2082.2242.2124.svg 0.14 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.24.304.2157.2242.2200.svg 0.143 6.46 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739099.25.302.2232.2246.2274.svg 0.14 6.48 Chemistry Black and white (Mo), and gold (Au).
A Schottky contac t according to claim 8, wherein deplet ion regions form beneath said second Schottky c ontact metal layer in said semiconductor and a spacing betwee n an adjacent pair of said plurality of segments of said first Sch o ttky contact metal layer is sufficiently small such that when said Scnottky contact is reverse bias e d, said depletion regions overlap and c ut of f said plurality of segments of said first S chottky con t act metal layer.
A Schottky contact according to claim 8, wherein each of said plurality of regions has a width within a range of about 1 to 5 pm, and a given pa i r of said plurality of regions is spaced apart from each other by a distance of about 1 to 5 pm.
A Schottky diode, comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.24.612.2150.2250.2193.svg 0.143 5.46 Chemistry Black and white a subs trate; an upper layer of nitride semiconductor di sposod atop at least a portion of said low er la y er of nitride semiconductor, said lower layer of nitride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739100.29.455.2528.2249.2572.svg 0.147 5.98 Chemistry Black and white semiconductor; a Schottky contact disposed atop said upp e r layer of nitri de semiconductor according to c laim 1, said semiconductor surface being a surface of said upper layer of nitride semiconductor; and -15-a f urther metal contact layer disposed atop sa xa lower layer of nitride semiconductor such that an ohmic conta c t is formed.
A field effect t ransi stor (FET), com prising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.5.614.710.2247.753.svg 0.143 5.443 Chemistry Black and white a substrate; an upper layer of n i tride semiconductor dispos e atop at least a portion of said lower layer of ni t ride semiconductor, said upper laye r being a diffe r ent n 3 tride Semicondnctor rmn an sa i d lower layer so that a hetero junction is t orm o d between said layers; a Schot tky contact disposed atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.13.459.1317.2246.1360.svg 0.143 5.957 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.14.460.1394.2245.1437.svg 0.143 5.95 Chemistry Black and white of nitride semiconductor; and a t urthe r metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic con Lact is fo rmed. 1 3. A method of forming a Schottky contact atop a surrace of a semiconductor, said method comprisin g: forming a first Schottky contact metal laye r atop a first portion of sa i d semiconductor surface; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.23.612.2075.2244.2118.svg 0.143 5.44 Chemistry Black and white of a second portion of said sur f ace and at le as- adj oin i ng said first Schottky contact m etal layer, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.26.459.2302.2243.2345.svg 0.143 5.947 Chemistry Black and white SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739101.27.457.2378.2149.2422.svg 0.147 5.64 Chemistry Black and white 14. A method according to cl a i m 13, wherein said semiconductor includes a nitride-based semiconductor. 1 5. A method accordin g to cl a i m 13, wherein sa id semiconducto r inc ludes a gallium nitride-based semiconductor. 16, A method according to cl aim 13, wherein said semiconductor includes gallium nitride (G aN).
A method according to claim 13, further comprising: doping at least a region of said second portion of said semiconductor surface us ing said first S chottky SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.3.462.559.2244.602.svg 0.143 5.94 Chemistry Black and white forming said second Schot t ky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.5.465.711.2183.754.svg 0.143 5.727 Chemistry Black and white etchin g a third por t ion of said sem i condu c tor surface using sa i d second Schottky contact metal as an etch m ask.
A me t hod according to claim 13, wherein said first Schottk y contact metal is at least one metal selected from the group consisting o r al uminum GAl), titanium (Ti), molybdenum (Mo), and gold (Au). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.12.461.1241.2243.1284.svg 0.143 5.94 Chemistry Black and white S chottky contact metal is at least one metal selected from the group con s isting of nickel (N i), palladium (Pd), a ti tanium ' -tun g sten (Ti W) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt). SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.17.462.1621.2242.1663.svg 0.14 5.933 Chemistry Black and white portion of said semiconductor su rfac e includes a plurality of regions s p ace d apart from each other, said first Schottk y SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.20.307.1849.2243.1891.svg 0.14 6.453 Chemistry Black and white each one of said plurality of regions of said first portion of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.22.308.2001.2242.2043.svg 0.14 6.447 Chemistry Black and white plurality of se g ments of said first Schottky contact metal is disposed atop a specific one o f said plural it y of regions of said first portion of said s emi co nductor surface, and sa id second Schottky contact metal is disposed between each adjac e nt pair of said plurality of segments of said first Schottky contact metal. SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.29.461.2530.2241.2573.svg 0.143 5.933 Chemistry Black and white regions form beneath said second Schott ry contact metal in said semiconductor and a spacing between an adjacent pair of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739102.32.306.2758.2240.2800.svg 0.14 6.447 Chemistry Black and white metal is sufficiently small such that when said Schottky contact i s reverse biased, s uc h that when said Schottky-17-contact is revers e bi nded, said depletion regions overlap each other and cut off said plurality of segments of said first Schottky contact metal.
A met hod of form i ng a Schottky diode, said method c ompr sing: rorm i ng a lower layer o f nitri de sem i conductor atop a substrate; forming an upper layer of nitride semiconductor ato p at least a port t on of said lower layer of nit ride sem ic onduc to r, said lower l ayer of nitride sem i conduc tor being more highly doped than said upper layer of nitride semiconductor; forming a Schottky contact atop said upper layer of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.19.460.1697.2256.1739.svg 0.14 5.987 Chemistry Black and white semiconductor surface being a sur f ace of said upper layer of nitride semiconductor; and forming a further meta l contact layer atop sa id lower layer of nitride se miconductor. such t haL a n ohmic contact is formed.
A method of forming a field effect trans i stor (FE), sai d method comprising: SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.27.616.2302.2256.2347.svg 0.15 5.467 Chemistry Black and white a substrate; forming an upper layer of nitride semiconductor atop at leas t a portion of said lower la y er of nitride semiconduct or, said upper layer n eing a different nitride SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739103.32.458.2682.2254.2724.svg 0.14 5.987 Chemistry Black and white hete rojunct i on is formed between said layers; forming a Schottky contact atop said upper layer of nitride semiconductor according to cl aim 13, s a id-18-semiconductor surface being a s urface of said upper layer of nitride semiconductor; and forming a further metal contact layer disposed atop said lower la y er of nitride semiconductor such t h at an ohmic contact is formed.
A method of improving metal adhesion in a Schottky contact, said method comprising: providing a semiconductor structure; forming a first Schottky cont act metal layer atop at least a por t ion of a surface o f said semiconductor structure, said first Schottky contact m eta l layer including a higher work fun cti on metal; annealing said first Schottky contact m etal layer at a temperature of at least 300 * C and at most 500 Q C; and SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.15.618.1473.2250.1515.svg 0.14 5.44 Chemistry Black and white at leasr a portion of s aid first Schottky c ont act metal layer.
A method accor oi ng to claim 26, wherein said first S cho t ky con t act metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.26.306.2305.2247.2347.svg 0.14 6.47 Chemistry Black and white titanium-tungsten (TiW) alloy, tantalum (Ta), rhenium (Re), ruthenium (Ru) and platinum (Pt).
A method according to claim 26, wherein said second Schot t ky contac t metal is at least one metal selected from the SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739104.31.305.2684.2243.2726.svg 0.14 6.46 Chemistry Black and white titanium-tungsten (TiW) alloy, aluminum (Al), t i tanium (Ti), molybdenum (M o), and gold (Au). -19- 32. A method of fo rming a Schottky diode, said method com prising: forming a lower layer of nitride semiconduct or a Lop a s u bst rat e; formi ng an u pper la y er of nitride semiconductor atop SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.7.466.791.2248.833.svg 0.14 5.94 Chemistry Black and white semiconductor, said lower layer of ri tride semiconductor SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.9.464.943.2248.987.svg 0.147 5.947 Chemistry Black and white semiconductor; torming a Schottky contact atop said upper la ye r of SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739105.12.466.1170.2250.1212.svg 0.14 5.947 Chemistry Black and white semiconductor surface being a surface of said upper layer of nitride semiconductor; and fo rming a further metal contact la y er atop said lower layer of nitride semiconductor such tha t an ohmic contact is fo rmed.
A method according to c laim 26, wherein said semiconductor includes a nitride-based semiconductor.
A method according to cl aim 26, wherein said semiconductor includes a gallium n it ride- b ased s emiconductor.
A method according to cl aim 26, wherein said semiconductor includes gallium nitride (G aN).
A method of forming a field effect transistor (F ET), said method comprising: for ming a l ower layer of nitride se m iconductor atop a subst rate; forming an upper layer of nitride sem i conductor atop at le ast a portion of said low e r layer of nitride sem i conductor, said upper layer being a dif f erent nitride semiconductor than said lower la y er to form a heterojun ct i on betwee n said layers; forming a Schottky contact atop said upper la y er of nitride semiconductor according to cl aim 26, s aid sem iconductor surface being a surface of said up per layer of ni t ri de se mic onduc tor; and for mi ng a further metal contact layer atop said lower layer of ni t ride semiconductor such that a n ohmic cont4acL is for m ed. 3 4. A Schottky contact having improved metal adhes aon, said Schottky contact comprisin g: -20- a first Schottky con tac t m et al layer d i sposed atop at least a portion of a surface of a semiconductor structure, said first Schottky cont a ct metal layer including a higher work function metal an d being annealed at a temperature of a t least 300 *C and at most 500 *C; and a second Scho t tky contact metal la y er disposed atop at least a portion of said f i rst Schottky contact metal layer.
A Schottky contact acco r din g to claim 34, wherein said semiconductor includes a nitride-based semic o nduc tor.
A S c hottky contact according to claim 34, wherein said s emic onductor in clu des a gallium nitride-based sem i conduct or.
A Scnottky contact according to claim 34, wherein said semiconductor includes gallium nitride (G aN).
A Schottky contact according Lo claim 34, wh erein said first Schottky contact metal is at least one meta l selected from the group cons ist ing of nickel (N i), palladium (Pd), a titanium-tungsten (T₁W) alloy, tantalum (T a), rhon ium (Re), ruthenium (Ru) and platinum (Pt).
A Schottky contact according to claim 34, wherein said s econd Sc h ottky contact metal is at least one met al SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739106.24.312.2153.2268.2195.svg 0.14 6.52 Chemistry Black and white (Pd), a tita nium- tungsten (Ti W) alloy, a l umi num (A l), titanium (Ti), molybdenum (Mo), and gold (Au).
A Schottky diode, comprising: a lower layer of nitride s emiconductor disposed a top a substrate; an upper layer of nitride sem i conductor d isposed atop at l e ast a portion of sa i d lower layer of nitride semiconductor, said lower layer of nitride semiconduc tor being mo t e h i ghly doped than said upper layer of nitride sem i conductor; -21- a Schottky contact disposed atop said upper layer of nitride semiconductor according to cl aim 3 4, said semiconductor surface being a surface of said upper layer of nitride sem ic onductor; and a further metal contact layer disposed atop said lower layer of nitride semiconductor such that an ohmic contact is formed.
A field effect transistor (F ET), comprising: a lower lay er of n itride semiconductor disposed atop a su n strat e; an upper layer of nitride semi c onductor disposed at op a t least a po x tion of said lower layer of ni t ride semiconductor, said upper layer being a different nitride semiconductor than said lower layer to form a heterojunction between said layers; a Scho tt k y contact disposed atop said upper layer of nitri de semic o nduc L or according Lo c laim 34, said SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739107.18.461.1697.2244.1739.svg 0.14 5.943 Chemistry Black and white of nitride semiconductor; and a further metal contact layer disposed atop said low er layer of nitride semiconductor such t hat an ohmic contac t is formed. -22-SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739089.33.302.2915.2234.2959.svg 0.147 6.44 Drawing Black and white Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
Schottky contact
Schottky diode
Materials described outside the worked examples.
first Schottky contact metal layer (lower work function)
second Schottky contact metal layer (higher work function)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. A first Schottky contact SVG 14105057.12-12-2013.HP₄Q₇₆U₉PXXIFW3.SPEC8739098.9.306.1019.2244.1061.svg 0.14 6.46 Chemistry Black and white SVG …
Related documents with shared materials, methods, properties, or citations.
field effect transistor (FET) with heterojunction
nitride-based semiconductor
gallium nitride-based semiconductor
gallium nitride
GaN
aluminum
Al
titanium
Ti
molybdenum
Mo
gold
Au
nickel
Ni
palladium
Pd
titanium-tungsten alloy
TiW
tantalum
Ta
rhenium
Re
ruthenium
Ru
platinum
Pt
field effect transistor (FET) with heterojunction
nitride-based semiconductor
gallium nitride-based semiconductor
gallium nitride
GaN
aluminum
Al
titanium
Ti
molybdenum
Mo
gold
Au
nickel
Ni
palladium
Pd
titanium-tungsten alloy
TiW
tantalum
Ta
rhenium
Re
ruthenium
Ru
platinum
Pt
field effect transistor (FET) with heterojunction
nitride-based semiconductor
gallium nitride-based semiconductor
gallium nitride
GaN
aluminum
Al
titanium
Ti
molybdenum
Mo
gold
Au
nickel
Ni
palladium
Pd
titanium-tungsten alloy
TiW
tantalum
Ta
rhenium
Re
ruthenium
Ru
platinum
Pt
field effect transistor (FET) with heterojunction
nitride-based semiconductor
gallium nitride-based semiconductor
gallium nitride
GaN
aluminum
Al
titanium
Ti
molybdenum
Mo
gold
Au
nickel
Ni
palladium
Pd
titanium-tungsten alloy
TiW
tantalum
Ta
rhenium
Re
ruthenium
Ru
platinum
Pt