Patent
Atlas literature
Patent
US 12,396,199 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a structural principle diagram of a GaN HEMT radio frequency power device in the prior art; and
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) high electron mobility tran-sistor (HEMT) radio frequency power device, comprising a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence, wherein a source, a gate, and a drain are arranged on the protection layer; a first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer; the source, the gate, and the drain are config-ured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the 35 second two-dimensional electron gas formed by the channel layer; and in case of an output power of the GaN HEMT radio frequency power device being equal or greater than a B₂ predetermined power, electrons in the second two-dimen-sional electron gas flow into the first two-dimensional elec-tron gas for making up for loss of electrons in the first two-dimensional electron gas.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer has a thickness of 100 nanometers.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer is made of a GaN material.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the first barrier layer and the second barrier layer are made of an AlGaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein the substrate layer is made of a SiC material.
The GaN HEMT radio frequency power device according to claim 1, wherein the buffer layer is made of a GaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein an Si₃N₄ dielectric material is filled between two of the source, the gate, and the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT radio frequency power device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,396,199 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a structural principle diagram of a GaN HEMT radio frequency power device in the prior art; and
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) high electron mobility tran-sistor (HEMT) radio frequency power device, comprising a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence, wherein a source, a gate, and a drain are arranged on the protection layer; a first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer; the source, the gate, and the drain are config-ured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the 35 second two-dimensional electron gas formed by the channel layer; and in case of an output power of the GaN HEMT radio frequency power device being equal or greater than a B₂ predetermined power, electrons in the second two-dimen-sional electron gas flow into the first two-dimensional elec-tron gas for making up for loss of electrons in the first two-dimensional electron gas.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer has a thickness of 100 nanometers.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer is made of a GaN material.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the first barrier layer and the second barrier layer are made of an AlGaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein the substrate layer is made of a SiC material.
The GaN HEMT radio frequency power device according to claim 1, wherein the buffer layer is made of a GaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein an Si₃N₄ dielectric material is filled between two of the source, the gate, and the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT radio frequency power device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,396,199 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a structural principle diagram of a GaN HEMT radio frequency power device in the prior art; and
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) high electron mobility tran-sistor (HEMT) radio frequency power device, comprising a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence, wherein a source, a gate, and a drain are arranged on the protection layer; a first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer; the source, the gate, and the drain are config-ured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the 35 second two-dimensional electron gas formed by the channel layer; and in case of an output power of the GaN HEMT radio frequency power device being equal or greater than a B₂ predetermined power, electrons in the second two-dimen-sional electron gas flow into the first two-dimensional elec-tron gas for making up for loss of electrons in the first two-dimensional electron gas.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer has a thickness of 100 nanometers.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer is made of a GaN material.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the first barrier layer and the second barrier layer are made of an AlGaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein the substrate layer is made of a SiC material.
The GaN HEMT radio frequency power device according to claim 1, wherein the buffer layer is made of a GaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein an Si₃N₄ dielectric material is filled between two of the source, the gate, and the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT radio frequency power device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,396,199 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a structural principle diagram of a GaN HEMT radio frequency power device in the prior art; and
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) high electron mobility tran-sistor (HEMT) radio frequency power device, comprising a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence, wherein a source, a gate, and a drain are arranged on the protection layer; a first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer; the source, the gate, and the drain are config-ured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the 35 second two-dimensional electron gas formed by the channel layer; and in case of an output power of the GaN HEMT radio frequency power device being equal or greater than a B₂ predetermined power, electrons in the second two-dimen-sional electron gas flow into the first two-dimensional elec-tron gas for making up for loss of electrons in the first two-dimensional electron gas.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer has a thickness of 100 nanometers.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the channel layer is made of a GaN material.
The GaN HEMT radio frequency power device accord-ing to claim 1, wherein the first barrier layer and the second barrier layer are made of an AlGaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein the substrate layer is made of a SiC material.
The GaN HEMT radio frequency power device according to claim 1, wherein the buffer layer is made of a GaN material.
The GaN HEMT radio frequency power device according to claim 1, wherein an Si₃N₄ dielectric material is filled between two of the source, the gate, and the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT radio frequency power device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a structural cross-sectional diagram of a high- linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
SiC
Si₃N₄
SiC
Si₃N₄
SiC
Si₃N₄
SiC
Si₃N₄
