INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES

Michael John Bergmann

Patent

Atlas literature

Patent

US 7,943,924

INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES

Michael John Bergmann, Daniel Carleton Driscoll, David Todd Emerson

2011-05-17·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 14 dependent

1
Independentgallium nitride-based outer layer (P-type)undoped indium gallium nitride-based layerohmic metal layerreflective metal layerlight emitting device with undoped InGaN-based ohmic contact
A light emitting device comprising: a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer; an undoped indium gallium nitride-based layer directly on the gallium nitride-based outer layer; an ohmic metal layer directly on the undoped indium gallium nitride-based layer opposite the gallium nitride-based outer layer; and a reﬂective metal layer directly on the ohmic metal layer opposite the undoped indium gallium nitride-based layer.
1. 2
  Dependent← claim 1gallium nitride-based outer layer (P-type)light emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 wherein the gallium nitride-based layer is doped P-type.
2. 3
  Dependent← claim 1reflective metal layerAgnickel-silver alloy/aluminumlight emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 wherein the reﬂective metal layer comprises silver, nickel-silver alloy and/or aluminum.
3. 4
  Dependent← claim 1ohmic metal layerNilight emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 wherein the ohmic metal layer comprises nickel.
4. 5
  Dependent← claim 1undoped indium gallium nitride-based layerlight emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 wherein the undoped indium gallium nitride-based layer is between about 5A and about 1 00A thick.
5. 6
  Dependent← claim 1gallium nitride-based outer layer (P-type)undoped indium gallium nitride-based layerlight emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 wherein the gallium nitride-based outer layer includes a nonplanar outer surface and wherein the undoped indium gallium nitride-based layer is also nonplanar.
6. 7
  Dependent← claim 1light emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 further comprising a barrier layer on the reﬂective metal layer opposite the undoped indium gallium nitride-based layer and a bonding layer on the barrier layer opposite the reﬂective metal layer.
7. 8
  Dependent← claim 1light emitting device with undoped InGaN-based ohmic contact
  A light emitting device according to Claim 1 further comprising a substrate on the gallium nitride-based epitaxial structure opposite the outer layer.
9
Independent
canceled
1. 10
  Dependent← claim 9gallium nitride-based outer layer (P-type)InNsemiconductor device with binary InN layer and substrate
  A de-ice acordin to Claim 9 fther m A semiconductor device comprising: a gallium nitride-based epitaxial structure that includes a gallium nitride-based outer la y er: a binary indium nitride la v er directly on the gallium nitride-based outer la y er; and a substrate on the gallium nitride-based epitaxial structure opposite the outer layer.
2. 11
  Dependent← claim 9gallium nitride-based outer layer (P-type)
  A device according to Claim 9 wherein the gallium nitride-based outer layer is doped P-type.
3. 12
  Dependent← claim 9gallium nitride-based outer layer (P-type)InNHEMT semiconductor device with binary InN layer
  A de ic a ording to Claim 9 A semiconductor device comprising: a gallium nitride-based epitaxial structure that includes a gallium nitride-based outer la v er; and a binary indium nitride la y er directly on the gallium nitride-based outer la y er, wherein the gallium nitride-based epitaxial structure includes an active High Electron Mobility Transistor (HEMT) region.
13
Independentgallium nitride-based epitaxial structureindium gallium nitride-based layer with clusters of elemental indium and/or binary indium nitrideInNsemiconductor device with InGaN-based layer containing elemental indium/InN clusters
A semiconductor device comprising: a gallium nitride-based epitaxial structure; and In re: Michael John Bergmann et al. Application No.: 12/850,979 Filed: Page 4 of 8 an indium gallium nitride-based layer including therein clusters of elemental indium and/or binary indium nitride, on the gallium nitride-based epitaxial structure.
1. 14
  Dependent← claim 13gallium nitride-based epitaxial structureindium gallium nitride-based layer with clusters of elemental indium and/or binary indium nitrideInNsemiconductor device with InGaN-based layer containing elemental indium/InN clusters
  A light emitting device according to Claim 13 wherein the indium gallium nitride-based layer including therein clusters of elemental indium and/or binary indium nitride is directly on the gallium nitride-based epitaxial structure.
2. 15
  Dependent← claim 13InGaNindium gallium nitride-based layer with clusters of elemental indium and/or binary indium nitrideInNsemiconductor device with InGaN-based layer containing elemental indium/InN clusters
  A light emitting device according to Claim 13 wherein indium gallium nitride-based layer including therein clusters of elemental indium and/or binary indium nitride is a ternary indium gallium nitride layer including therein clusters of elemental indium and/or binary indium nitride.
3. 16
  Dependent← claim 13semiconductor device with InGaN-based layer containing elemental indium/InN clusters
  A light emitting device according to Claim 13 further comprising a substrate on the gallium nitride-based epitaxial structure opposite the indium gallium nitride- based layer.
4. 17
  Dependent← claim 13HEMT semiconductor device with binary InN layersemiconductor device with InGaN-based layer containing elemental indium/InN clusters
  A device according to Claim 13 wherein the gallium nitride-based epitaxial structure includes an active High Electron Mobility Transistor (HEMT) region.
18
Independent
-1 9. canceled
19
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

light emitting device with undoped InGaN-based ohmic contact

reflective metal layerreflective metal

ohmic metal layerohmic metal

undoped indium gallium nitride-based layerundoped InGaN interlayer

gallium nitride-based outer layer (P-type)p-type outer layer

gallium nitride-based epitaxial structureactive light emitting region and epitaxial structure

semiconductor device with binary InN layer and substrate

Materials

Materials described outside the worked examples.

gallium nitride-based outer layer (P-type)

Epitaxial Outer Layer

undoped indium gallium nitride-based layer

Ohmic Contact Interlayer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES | Matter42 Literature