000 1. A method for treating the GaN-containing semiconductor epitaxy layer by usin g the etchin g process to remove the threading dislocation, comprising: providing a substrate, wherein the substrate bein g selected from the group consistin g of silicon carbide, silicon, lithium aluminate (LiA IO₂), and single crystal zinc oxide substrate and free-standin g G aN substrate; forming a G aN-containing semiconductor epitaxy layer with a threading dislocation on the substrate by using Molecular Beam Epitaxy (MBE) method; a n4 using an etching gas to perform an etching process to remove the threading dislocation in the G aN-containing epitaxy semiconductor, wherein the etching g as bein g selected from the group consisting of hydrogen, hydrogen halide, and halide gas, a temperature range for the etchin g process bein g 800 * C to 1200 00, a pressure range of the etchin g process bein g 10 torr to 800 torr for 10 minutes: and immersing the etched G aN-containin g epitaxy semiconductor layer in an acid solution for about 15 minutes to 30 minutes, wherein the acid solution bein g mixed b y 1:3 of a phosphoric acid and a sulfuric acid: wherein the G aN-containing semiconductor epitaxy la y er bein g selected from the group consistin g of G aN bulk, n-t ype dopin g G aN-containing semiconductor layer, p-typ e doping G aN-containin g semiconductor layer, Quantum Wells G aN-containin g semiconductor layer, Multi p le Quantum W ells G aN-containin g semiconductor layer, and single crystal GaN.

000 1. A method for treating the GaN-containing semiconductor epitaxy layer by usin g the etchin g process to remove the threading dislocation, comprising: providing a substrate, wherein the substrate bein g selected from the group consistin g of silicon carbide, silicon, lithium aluminate (LiA IO₂), and single crystal zinc oxide substrate and free-standin g G aN substrate; forming a G aN-containing semiconductor epitaxy layer with a threading dislocation on the substrate by using Molecular Beam Epitaxy (MBE) method; a n4 using an etching gas to perform an etching process to remove the threading dislocation in the G aN-containing epitaxy semiconductor, wherein the etching g as bein g selected from the group consisting of hydrogen, hydrogen halide, and halide gas, a temperature range for the etchin g process bein g 800 * C to 1200 00, a pressure range of the etchin g process bein g 10 torr to 800 torr for 10 minutes: and immersing the etched G aN-containin g epitaxy semiconductor layer in an acid solution for about 15 minutes to 30 minutes, wherein the acid solution bein g mixed b y 1:3 of a phosphoric acid and a sulfuric acid: wherein the G aN-containing semiconductor epitaxy la y er bein g selected from the group consistin g of G aN bulk, n-t ype dopin g G aN-containing semiconductor layer, p-typ e doping G aN-containin g semiconductor layer, Quantum Wells G aN-containin g semiconductor layer, Multi p le Quantum W ells G aN-containin g semiconductor layer, and single crystal GaN.

000 1. A method for treating the GaN-containing semiconductor epitaxy layer by usin g the etchin g process to remove the threading dislocation, comprising: providing a substrate, wherein the substrate bein g selected from the group consistin g of silicon carbide, silicon, lithium aluminate (LiA IO₂), and single crystal zinc oxide substrate and free-standin g G aN substrate; forming a G aN-containing semiconductor epitaxy layer with a threading dislocation on the substrate by using Molecular Beam Epitaxy (MBE) method; a n4 using an etching gas to perform an etching process to remove the threading dislocation in the G aN-containing epitaxy semiconductor, wherein the etching g as bein g selected from the group consisting of hydrogen, hydrogen halide, and halide gas, a temperature range for the etchin g process bein g 800 * C to 1200 00, a pressure range of the etchin g process bein g 10 torr to 800 torr for 10 minutes: and immersing the etched G aN-containin g epitaxy semiconductor layer in an acid solution for about 15 minutes to 30 minutes, wherein the acid solution bein g mixed b y 1:3 of a phosphoric acid and a sulfuric acid: wherein the G aN-containing semiconductor epitaxy la y er bein g selected from the group consistin g of G aN bulk, n-t ype dopin g G aN-containing semiconductor layer, p-typ e doping G aN-containin g semiconductor layer, Quantum Wells G aN-containin g semiconductor layer, Multi p le Quantum W ells G aN-containin g semiconductor layer, and single crystal GaN.

000 1. A method for treating the GaN-containing semiconductor epitaxy layer by usin g the etchin g process to remove the threading dislocation, comprising: providing a substrate, wherein the substrate bein g selected from the group consistin g of silicon carbide, silicon, lithium aluminate (LiA IO₂), and single crystal zinc oxide substrate and free-standin g G aN substrate; forming a G aN-containing semiconductor epitaxy layer with a threading dislocation on the substrate by using Molecular Beam Epitaxy (MBE) method; a n4 using an etching gas to perform an etching process to remove the threading dislocation in the G aN-containing epitaxy semiconductor, wherein the etching g as bein g selected from the group consisting of hydrogen, hydrogen halide, and halide gas, a temperature range for the etchin g process bein g 800 * C to 1200 00, a pressure range of the etchin g process bein g 10 torr to 800 torr for 10 minutes: and immersing the etched G aN-containin g epitaxy semiconductor layer in an acid solution for about 15 minutes to 30 minutes, wherein the acid solution bein g mixed b y 1:3 of a phosphoric acid and a sulfuric acid: wherein the G aN-containing semiconductor epitaxy la y er bein g selected from the group consistin g of G aN bulk, n-t ype dopin g G aN-containing semiconductor layer, p-typ e doping G aN-containin g semiconductor layer, Quantum Wells G aN-containin g semiconductor layer, Multi p le Quantum W ells G aN-containin g semiconductor layer, and single crystal GaN.