MANUFACTURING METHOD OF GAN THIN FILM TEMPLATE SUBSTRATE, GAN THIN FILM TEMPLATE SUBSTRATE AND GAN THICK FILM SINGLE CRYSTAL

Satoru Morioka

Patent

Atlas literature

Patent

US 8,137,460

MANUFACTURING METHOD OF GAN THIN FILM TEMPLATE SUBSTRATE, GAN THIN FILM TEMPLATE SUBSTRATE AND GAN THICK FILM SINGLE CRYSTAL

Satoru Morioka, Misao Takakusaki, Takayuki Shimizu

2012-03-20·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

11 independent · 8 dependent

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IndependentGaNHClGaClNH₃GaN thin film template substrate
A manufacturing method of a GaN thin ﬁlm template substrate by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaC I (gallium chloride); and forming a GaN thin ﬁlm by a reaction of the generated GaC I (gallium chloride) with NH₃ (ammonia) gas on a substrate, the manufacturing method comprising supplying the NH₃ gas at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate, in an upstream side of the substrate, inside of an atmosphere including the GaC I, through a nozzle, so that a ﬁlm thickness can be controlled in a nanometer order, wherein a tip of the nozzle through which the NH 3 gas is supplied is located closer to the substrate than a supply port of an N 2 gas supplying pipe from which an N 7 gas is supplied exclusively.
1. 12
  Dependent← claim 11NdGaO₃ (011) substrateGaN thin film template substrate
  The manufacturing method of the GaN thin ﬁlm template substrate as claimed in claim 11, wherein the substrate is an NGO(0 11) substrate.
2. 13
  Dependent← claim 11GaNGaN thin film template substrate
  A GaN thin ﬁlm template substrate which is obtained by the manufacturing method as claimed in claim 11, wherein a full width at half maximum of the GaN thin ﬁlm template substrate by an XRD measurement is not more than 1000 seconds.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN thin film template substrate

GaNthin film

NdGaO₃ (011) substratesubstrate

Materials

Materials described outside the worked examples.

GaN thin film

GaN

Deposited Film

Epitaxial Film

HCl (hydrogen chloride)

HCl

Process steps

Additional fabrication and treatment steps described in the patent.

Hvpe Growth

Step 1

Process details

method:hydride vapor phase epitaxy (HVPE)

precursors:HCl, Ga, NH₃

intermediate:GaCl

nozzle position:nozzle tip closer to substrate than N₂ gas supplying pipe supply port

NH3 supply method:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
XRD FWHM of GaN thin film template substrate (claim 13 upper limit)	≤ 1000 arcseconds	GaN
XRD FWHM of GaN thin film template substrate (claim 14 upper limit)	≤ 500 arcseconds

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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