Patent
US 11,236,439NON-POLAR OR SEMI-POLAR GaN WAFER
Yusuke TSUKADA
US
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Patent
Atlas literature
Patent
US 11,236,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9. Canceled
Canceled
A method for producing a GaN crystal, comprising: planarizing front surfaces of a plurality of tiling GaN seeds arranged side by side on a surface of a plate to produce a plurality of planarized tiling GaN seeds; forming an aggregated seed by arranging the plurality of planarized tiling GaN seeds side by side on a susceptor of an H V PE apparatus in the same arrangement as when arranged on the plate during planarizing, with the front planarized surfaces facing upward; and growing a bulk GaN crystal epitaxially on the aggregated seed by an H V PE method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein an angle formed by the front surface and a side surface of the tiling GaN seed is not an obtuse angle. Currently amended
The method for producing a GaN crystal according to claim 10, wherein back surfaces of the tiling GaN seeds are planarized prior to the planarizing of the front surfaces of the tiling GaN seeds. Previously presented
The method for producing a GaN crystal according to claim 10, wherein the plurality of tiling GaN seeds are made of a GaN crystal grown by an ammonothermal method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein the front surfaces of the plurality of tiling GaN seeds are parallel to an M- plane or slightly tilted from the M-plane. Currently amended
A method for producing a GaN wafer, comprising: slicing the GaN crystal produced by the method according to claim 10. Previously presented
A method for producing a non-polar or semi-polar crystal produced by the method according to claim GaN wafer, comprising: slicing the GaN
Materials described outside the worked examples.
tiling GaN seed
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
X-ray rocking curve FWHM of (100) plane | — | GaN |
Thickness | 45–55 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,236,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9. Canceled
Canceled
A method for producing a GaN crystal, comprising: planarizing front surfaces of a plurality of tiling GaN seeds arranged side by side on a surface of a plate to produce a plurality of planarized tiling GaN seeds; forming an aggregated seed by arranging the plurality of planarized tiling GaN seeds side by side on a susceptor of an H V PE apparatus in the same arrangement as when arranged on the plate during planarizing, with the front planarized surfaces facing upward; and growing a bulk GaN crystal epitaxially on the aggregated seed by an H V PE method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein an angle formed by the front surface and a side surface of the tiling GaN seed is not an obtuse angle. Currently amended
The method for producing a GaN crystal according to claim 10, wherein back surfaces of the tiling GaN seeds are planarized prior to the planarizing of the front surfaces of the tiling GaN seeds. Previously presented
The method for producing a GaN crystal according to claim 10, wherein the plurality of tiling GaN seeds are made of a GaN crystal grown by an ammonothermal method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein the front surfaces of the plurality of tiling GaN seeds are parallel to an M- plane or slightly tilted from the M-plane. Currently amended
A method for producing a GaN wafer, comprising: slicing the GaN crystal produced by the method according to claim 10. Previously presented
A method for producing a non-polar or semi-polar crystal produced by the method according to claim GaN wafer, comprising: slicing the GaN
Materials described outside the worked examples.
tiling GaN seed
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
X-ray rocking curve FWHM of (100) plane | — | GaN |
Thickness | 45–55 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,236,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9. Canceled
Canceled
A method for producing a GaN crystal, comprising: planarizing front surfaces of a plurality of tiling GaN seeds arranged side by side on a surface of a plate to produce a plurality of planarized tiling GaN seeds; forming an aggregated seed by arranging the plurality of planarized tiling GaN seeds side by side on a susceptor of an H V PE apparatus in the same arrangement as when arranged on the plate during planarizing, with the front planarized surfaces facing upward; and growing a bulk GaN crystal epitaxially on the aggregated seed by an H V PE method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein an angle formed by the front surface and a side surface of the tiling GaN seed is not an obtuse angle. Currently amended
The method for producing a GaN crystal according to claim 10, wherein back surfaces of the tiling GaN seeds are planarized prior to the planarizing of the front surfaces of the tiling GaN seeds. Previously presented
The method for producing a GaN crystal according to claim 10, wherein the plurality of tiling GaN seeds are made of a GaN crystal grown by an ammonothermal method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein the front surfaces of the plurality of tiling GaN seeds are parallel to an M- plane or slightly tilted from the M-plane. Currently amended
A method for producing a GaN wafer, comprising: slicing the GaN crystal produced by the method according to claim 10. Previously presented
A method for producing a non-polar or semi-polar crystal produced by the method according to claim GaN wafer, comprising: slicing the GaN
Materials described outside the worked examples.
tiling GaN seed
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
X-ray rocking curve FWHM of (100) plane | — | GaN |
Thickness | 45–55 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,236,439Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9. Canceled
Canceled
A method for producing a GaN crystal, comprising: planarizing front surfaces of a plurality of tiling GaN seeds arranged side by side on a surface of a plate to produce a plurality of planarized tiling GaN seeds; forming an aggregated seed by arranging the plurality of planarized tiling GaN seeds side by side on a susceptor of an H V PE apparatus in the same arrangement as when arranged on the plate during planarizing, with the front planarized surfaces facing upward; and growing a bulk GaN crystal epitaxially on the aggregated seed by an H V PE method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein an angle formed by the front surface and a side surface of the tiling GaN seed is not an obtuse angle. Currently amended
The method for producing a GaN crystal according to claim 10, wherein back surfaces of the tiling GaN seeds are planarized prior to the planarizing of the front surfaces of the tiling GaN seeds. Previously presented
The method for producing a GaN crystal according to claim 10, wherein the plurality of tiling GaN seeds are made of a GaN crystal grown by an ammonothermal method. Currently amended
The method for producing a GaN crystal according to claim 10, wherein the front surfaces of the plurality of tiling GaN seeds are parallel to an M- plane or slightly tilted from the M-plane. Currently amended
A method for producing a GaN wafer, comprising: slicing the GaN crystal produced by the method according to claim 10. Previously presented
A method for producing a non-polar or semi-polar crystal produced by the method according to claim GaN wafer, comprising: slicing the GaN
Materials described outside the worked examples.
tiling GaN seed
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
X-ray rocking curve FWHM of (100) plane | — | GaN |
Thickness | 45–55 mm |
Related documents with shared materials, methods, properties, or citations.
| — |
Thickness | 95–155 mm | — |
Temperature | 590–630 °C | — |
Temperature | 5–20 °C | — |
Pressure | 200–220 MPa | — |
Temperature | 600–611 °C | — |
Temperature | 9–13 °C | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3 mm | — |
| — |
Thickness | 95–155 mm | — |
Temperature | 590–630 °C | — |
Temperature | 5–20 °C | — |
Pressure | 200–220 MPa | — |
Temperature | 600–611 °C | — |
Temperature | 9–13 °C | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3 mm | — |
| — |
Thickness | 95–155 mm | — |
Temperature | 590–630 °C | — |
Temperature | 5–20 °C | — |
Pressure | 200–220 MPa | — |
Temperature | 600–611 °C | — |
Temperature | 9–13 °C | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3 mm | — |
| — |
Thickness | 95–155 mm | — |
Temperature | 590–630 °C | — |
Temperature | 5–20 °C | — |
Pressure | 200–220 MPa | — |
Temperature | 600–611 °C | — |
Temperature | 9–13 °C | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3 mm | — |