Patent
US 9,202,878GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Young-jo TAK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,202,878Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0018]
FIG. 2 is a view for defining a bow of a wafer; [0019]
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
FIG. 4 is a cross-sectional view of a detailed structure of a nitride stack of
FIG. 5 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0022]
FIGS. 6A through 6E are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 7A through 7F are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 8A through 8D are cross-sectional views for explaining a method of manufacturing a light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/713,4 15 Attorney Docket No.: 2557-001850-US AMENDMENTS TO THE CLAIMS 1. A semiconductor device comprising: a silicon-based layer doped with boron (B) and germanium (Ge); a buffer layer on the silicon-based layer; a nitride stack on the buffer layer, the nitride stack including, a plurality of nitride semiconductor la y ers, at least one masking layer between the plurality of nitride semiconductor layers, the at least one masking layer including titanium nitride (TiN), and at least one intermediate la y er between the plurality of nitride semiconductor layers, the at least one intermediate layer including A lhGaixN; and a device layer on the nitride stack, the device layer including one of a light- emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The semiconductor device of claim 1, wherein a doping concentration of the boron (B) and the germanium (Ge) is higher than 1X₁₀₁₉/cm3.
The semiconductor device of claim 1, wherein the boron (B) and the germanium (Ge) are doped in the silicon-based layer such that a resistivity of the silicon-based layer is equal to or less than about 1 g2 cm.
The semiconductor device of claim 1, wherein the buffer layer has one of a single layer structure formed of one of A i N, SiC, A 120 3, AlGaN, A l InGaN, Al InBGaN, A J BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The semiconductor device of claim 1, wherein silicon (Si) and silicon carbide (SiC) and doped
. canceled
The semiconductor device of claim 5 1, wherein the plurality of nitride semiconductor layers are formed of A lxInyGai,y N (where Os x,y s 1, SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.1.svg 0.15 0.54 Black and white 7-8..
A method of manufacturing a semiconductor device, the method comprising: preparing a silicon based substrate doped with boron (B) and germanium (Ge); forming a buffer layer on the silicon based layer; forming a nitride stack on the buffer layer, wherein the formin g a nitride stack includes, forming a plurality of nitride semiconductor la y ers on the buffer la y er, forming at least one masking la y er between the plurality of nitride semiconductor la y ers, the at least one masking la y er including titanium nitride (TiN), and Page 3 Application No.: 13/713,4 Attorney Docket No.: 2557-001850-US forming at least one intermediate layer between the plurality of nitride semiconductor la y ers, the at least one intermediate la y er includin g Al.Ga=.N; and forming a device layer on the nitride stack, the device layer including one of a light-emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The method of claim 9, wherein the preparing performs an ion implantation on the silicon based substrate.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) at a doping concentration higher than 1X₁₀₁₉/cm3.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) such that a resistivity of the silicon-based substrate is equal to or less than about 1 Qcm.
The method of claim 9, wherein the forming a buffer layer includes forming one of a single layer structure of one of A I N, SiC, A 12O 3, AlGaN, Al InGaN, A l InBGaN, A l BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The method of claim 9, wherein the preparing formed of one of silicon (Si) and silicon carbide
The method of claim 9, wherein the preparing boron (B) and the germanium (Ge) simultaneously. a plurality of nitride semiconductor layers 0.15 1.78 Black and white 16-17.. the silicon-based layer is formed of one of with both the boron and the germanium. includes doping the silicon based substrate (SiC). dopes the silicon based substrate with the
. canceled
The method of claim 449, wherein the forming includes forming layers of A lInyGa,...yN SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.2.svg
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor device
Materials described outside the worked examples.
silicon-based layer doped with boron and germanium
titanium nitride
TiN
AlxInyGa(1-x-y)N nitride semiconductor
AlxInyGa(1-x-y)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
B and Ge doping concentration in silicon-based layer | ≥ 10000000000000000000 cm⁻³ | silicon-based layer doped with boron and germanium |
resistivity of silicon-based layer doped with B and Ge |
Table 1
boron (B) boron (B) boron (B) 1.0~1.5 X 1 01 9/cm3 2.2 ~ 7.0 X 1 01 5/cm3 1.0~1
For example, referring to Table 1 below, in a case where a silicon wafer is doped with boron
p. 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,878Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0018]
FIG. 2 is a view for defining a bow of a wafer; [0019]
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
FIG. 4 is a cross-sectional view of a detailed structure of a nitride stack of
FIG. 5 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0022]
FIGS. 6A through 6E are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 7A through 7F are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 8A through 8D are cross-sectional views for explaining a method of manufacturing a light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/713,4 15 Attorney Docket No.: 2557-001850-US AMENDMENTS TO THE CLAIMS 1. A semiconductor device comprising: a silicon-based layer doped with boron (B) and germanium (Ge); a buffer layer on the silicon-based layer; a nitride stack on the buffer layer, the nitride stack including, a plurality of nitride semiconductor la y ers, at least one masking layer between the plurality of nitride semiconductor layers, the at least one masking layer including titanium nitride (TiN), and at least one intermediate la y er between the plurality of nitride semiconductor layers, the at least one intermediate layer including A lhGaixN; and a device layer on the nitride stack, the device layer including one of a light- emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The semiconductor device of claim 1, wherein a doping concentration of the boron (B) and the germanium (Ge) is higher than 1X₁₀₁₉/cm3.
The semiconductor device of claim 1, wherein the boron (B) and the germanium (Ge) are doped in the silicon-based layer such that a resistivity of the silicon-based layer is equal to or less than about 1 g2 cm.
The semiconductor device of claim 1, wherein the buffer layer has one of a single layer structure formed of one of A i N, SiC, A 120 3, AlGaN, A l InGaN, Al InBGaN, A J BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The semiconductor device of claim 1, wherein silicon (Si) and silicon carbide (SiC) and doped
. canceled
The semiconductor device of claim 5 1, wherein the plurality of nitride semiconductor layers are formed of A lxInyGai,y N (where Os x,y s 1, SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.1.svg 0.15 0.54 Black and white 7-8..
A method of manufacturing a semiconductor device, the method comprising: preparing a silicon based substrate doped with boron (B) and germanium (Ge); forming a buffer layer on the silicon based layer; forming a nitride stack on the buffer layer, wherein the formin g a nitride stack includes, forming a plurality of nitride semiconductor la y ers on the buffer la y er, forming at least one masking la y er between the plurality of nitride semiconductor la y ers, the at least one masking la y er including titanium nitride (TiN), and Page 3 Application No.: 13/713,4 Attorney Docket No.: 2557-001850-US forming at least one intermediate layer between the plurality of nitride semiconductor la y ers, the at least one intermediate la y er includin g Al.Ga=.N; and forming a device layer on the nitride stack, the device layer including one of a light-emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The method of claim 9, wherein the preparing performs an ion implantation on the silicon based substrate.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) at a doping concentration higher than 1X₁₀₁₉/cm3.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) such that a resistivity of the silicon-based substrate is equal to or less than about 1 Qcm.
The method of claim 9, wherein the forming a buffer layer includes forming one of a single layer structure of one of A I N, SiC, A 12O 3, AlGaN, Al InGaN, A l InBGaN, A l BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The method of claim 9, wherein the preparing formed of one of silicon (Si) and silicon carbide
The method of claim 9, wherein the preparing boron (B) and the germanium (Ge) simultaneously. a plurality of nitride semiconductor layers 0.15 1.78 Black and white 16-17.. the silicon-based layer is formed of one of with both the boron and the germanium. includes doping the silicon based substrate (SiC). dopes the silicon based substrate with the
. canceled
The method of claim 449, wherein the forming includes forming layers of A lInyGa,...yN SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.2.svg
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor device
Materials described outside the worked examples.
silicon-based layer doped with boron and germanium
titanium nitride
TiN
AlxInyGa(1-x-y)N nitride semiconductor
AlxInyGa(1-x-y)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
B and Ge doping concentration in silicon-based layer | ≥ 10000000000000000000 cm⁻³ | silicon-based layer doped with boron and germanium |
resistivity of silicon-based layer doped with B and Ge |
Table 1
boron (B) boron (B) boron (B) 1.0~1.5 X 1 01 9/cm3 2.2 ~ 7.0 X 1 01 5/cm3 1.0~1
For example, referring to Table 1 below, in a case where a silicon wafer is doped with boron
p. 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,878Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0018]
FIG. 2 is a view for defining a bow of a wafer; [0019]
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
FIG. 4 is a cross-sectional view of a detailed structure of a nitride stack of
FIG. 5 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0022]
FIGS. 6A through 6E are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 7A through 7F are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 8A through 8D are cross-sectional views for explaining a method of manufacturing a light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/713,4 15 Attorney Docket No.: 2557-001850-US AMENDMENTS TO THE CLAIMS 1. A semiconductor device comprising: a silicon-based layer doped with boron (B) and germanium (Ge); a buffer layer on the silicon-based layer; a nitride stack on the buffer layer, the nitride stack including, a plurality of nitride semiconductor la y ers, at least one masking layer between the plurality of nitride semiconductor layers, the at least one masking layer including titanium nitride (TiN), and at least one intermediate la y er between the plurality of nitride semiconductor layers, the at least one intermediate layer including A lhGaixN; and a device layer on the nitride stack, the device layer including one of a light- emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The semiconductor device of claim 1, wherein a doping concentration of the boron (B) and the germanium (Ge) is higher than 1X₁₀₁₉/cm3.
The semiconductor device of claim 1, wherein the boron (B) and the germanium (Ge) are doped in the silicon-based layer such that a resistivity of the silicon-based layer is equal to or less than about 1 g2 cm.
The semiconductor device of claim 1, wherein the buffer layer has one of a single layer structure formed of one of A i N, SiC, A 120 3, AlGaN, A l InGaN, Al InBGaN, A J BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The semiconductor device of claim 1, wherein silicon (Si) and silicon carbide (SiC) and doped
. canceled
The semiconductor device of claim 5 1, wherein the plurality of nitride semiconductor layers are formed of A lxInyGai,y N (where Os x,y s 1, SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.1.svg 0.15 0.54 Black and white 7-8..
A method of manufacturing a semiconductor device, the method comprising: preparing a silicon based substrate doped with boron (B) and germanium (Ge); forming a buffer layer on the silicon based layer; forming a nitride stack on the buffer layer, wherein the formin g a nitride stack includes, forming a plurality of nitride semiconductor la y ers on the buffer la y er, forming at least one masking la y er between the plurality of nitride semiconductor la y ers, the at least one masking la y er including titanium nitride (TiN), and Page 3 Application No.: 13/713,4 Attorney Docket No.: 2557-001850-US forming at least one intermediate layer between the plurality of nitride semiconductor la y ers, the at least one intermediate la y er includin g Al.Ga=.N; and forming a device layer on the nitride stack, the device layer including one of a light-emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The method of claim 9, wherein the preparing performs an ion implantation on the silicon based substrate.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) at a doping concentration higher than 1X₁₀₁₉/cm3.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) such that a resistivity of the silicon-based substrate is equal to or less than about 1 Qcm.
The method of claim 9, wherein the forming a buffer layer includes forming one of a single layer structure of one of A I N, SiC, A 12O 3, AlGaN, Al InGaN, A l InBGaN, A l BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The method of claim 9, wherein the preparing formed of one of silicon (Si) and silicon carbide
The method of claim 9, wherein the preparing boron (B) and the germanium (Ge) simultaneously. a plurality of nitride semiconductor layers 0.15 1.78 Black and white 16-17.. the silicon-based layer is formed of one of with both the boron and the germanium. includes doping the silicon based substrate (SiC). dopes the silicon based substrate with the
. canceled
The method of claim 449, wherein the forming includes forming layers of A lInyGa,...yN SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.2.svg
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor device
Materials described outside the worked examples.
silicon-based layer doped with boron and germanium
titanium nitride
TiN
AlxInyGa(1-x-y)N nitride semiconductor
AlxInyGa(1-x-y)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
B and Ge doping concentration in silicon-based layer | ≥ 10000000000000000000 cm⁻³ | silicon-based layer doped with boron and germanium |
resistivity of silicon-based layer doped with B and Ge |
Table 1
boron (B) boron (B) boron (B) 1.0~1.5 X 1 01 9/cm3 2.2 ~ 7.0 X 1 01 5/cm3 1.0~1
For example, referring to Table 1 below, in a case where a silicon wafer is doped with boron
p. 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,878Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0018]
FIG. 2 is a view for defining a bow of a wafer; [0019]
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
FIG. 4 is a cross-sectional view of a detailed structure of a nitride stack of
FIG. 5 is a schematic cross-sectional view illustrating a gallium nitride based semiconductor device, according to example embodiments; [0022]
FIGS. 6A through 6E are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 7A through 7F are cross-sectional views for explaining a method of manufacturing the semiconductor device of
FIGS. 8A through 8D are cross-sectional views for explaining a method of manufacturing a light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/713,4 15 Attorney Docket No.: 2557-001850-US AMENDMENTS TO THE CLAIMS 1. A semiconductor device comprising: a silicon-based layer doped with boron (B) and germanium (Ge); a buffer layer on the silicon-based layer; a nitride stack on the buffer layer, the nitride stack including, a plurality of nitride semiconductor la y ers, at least one masking layer between the plurality of nitride semiconductor layers, the at least one masking layer including titanium nitride (TiN), and at least one intermediate la y er between the plurality of nitride semiconductor layers, the at least one intermediate layer including A lhGaixN; and a device layer on the nitride stack, the device layer including one of a light- emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The semiconductor device of claim 1, wherein a doping concentration of the boron (B) and the germanium (Ge) is higher than 1X₁₀₁₉/cm3.
The semiconductor device of claim 1, wherein the boron (B) and the germanium (Ge) are doped in the silicon-based layer such that a resistivity of the silicon-based layer is equal to or less than about 1 g2 cm.
The semiconductor device of claim 1, wherein the buffer layer has one of a single layer structure formed of one of A i N, SiC, A 120 3, AlGaN, A l InGaN, Al InBGaN, A J BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The semiconductor device of claim 1, wherein silicon (Si) and silicon carbide (SiC) and doped
. canceled
The semiconductor device of claim 5 1, wherein the plurality of nitride semiconductor layers are formed of A lxInyGai,y N (where Os x,y s 1, SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.1.svg 0.15 0.54 Black and white 7-8..
A method of manufacturing a semiconductor device, the method comprising: preparing a silicon based substrate doped with boron (B) and germanium (Ge); forming a buffer layer on the silicon based layer; forming a nitride stack on the buffer layer, wherein the formin g a nitride stack includes, forming a plurality of nitride semiconductor la y ers on the buffer la y er, forming at least one masking la y er between the plurality of nitride semiconductor la y ers, the at least one masking la y er including titanium nitride (TiN), and Page 3 Application No.: 13/713,4 Attorney Docket No.: 2557-001850-US forming at least one intermediate layer between the plurality of nitride semiconductor la y ers, the at least one intermediate la y er includin g Al.Ga=.N; and forming a device layer on the nitride stack, the device layer including one of a light-emitting diode (LED) device, a high electron mobility transistor (HEMT), and a laser diode (LD) device.
The method of claim 9, wherein the preparing performs an ion implantation on the silicon based substrate.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) at a doping concentration higher than 1X₁₀₁₉/cm3.
The method of claim 9, wherein the preparing includes doping the silicon based substrate with the boron (B) and the germanium (Ge) such that a resistivity of the silicon-based substrate is equal to or less than about 1 Qcm.
The method of claim 9, wherein the forming a buffer layer includes forming one of a single layer structure of one of A I N, SiC, A 12O 3, AlGaN, Al InGaN, A l InBGaN, A l BGaN, GaN, and XY, and a multi-layer structure thereof, wherein X includes at least one of titanium (Ti), chromium (Cr), zirconium (Zr), hafnium (Hf), niobium (Nb), and tantalum (Ta), and Y is one of nitrogen (N) and boron (B, B₂).
The method of claim 9, wherein the preparing formed of one of silicon (Si) and silicon carbide
The method of claim 9, wherein the preparing boron (B) and the germanium (Ge) simultaneously. a plurality of nitride semiconductor layers 0.15 1.78 Black and white 16-17.. the silicon-based layer is formed of one of with both the boron and the germanium. includes doping the silicon based substrate (SiC). dopes the silicon based substrate with the
. canceled
The method of claim 449, wherein the forming includes forming layers of A lInyGa,...yN SVG 13713415.04-14-2015.I₈RJFTOQPXXIFW4.CLM.2.svg
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor device
Materials described outside the worked examples.
silicon-based layer doped with boron and germanium
titanium nitride
TiN
AlxInyGa(1-x-y)N nitride semiconductor
AlxInyGa(1-x-y)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of variations of bow of a silicon substrates with respect to a doping concentration of boron (B); [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
B and Ge doping concentration in silicon-based layer | ≥ 10000000000000000000 cm⁻³ | silicon-based layer doped with boron and germanium |
resistivity of silicon-based layer doped with B and Ge |
Table 1
boron (B) boron (B) boron (B) 1.0~1.5 X 1 01 9/cm3 2.2 ~ 7.0 X 1 01 5/cm3 1.0~1
For example, referring to Table 1 below, in a case where a silicon wafer is doped with boron
p. 6
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