GAN AMPLIFIER FOR WIFI APPLICATIONS

William Pribble

Patent

Atlas literature

Patent

US 9,565,642

GAN AMPLIFIER FOR WIFI APPLICATIONS

William Pribble

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 32 dependent

1
IndependentGaNGaNAlGaNSiCGaN RF integrated circuit (RFIC) for WiFi
A gallium nitride (GaN) RF integrated circuit (RF I C), the RFIC comprising: a monolithic semiconductor structure that comprises includes a ﬁrst GaN transistor and a second GaN transistor; one or more GaN transistors; and impedance matching circuitry that is coupled in series with the one or more GaN transistors, wherein the ﬁrst GaN transistor comprises a contact that is coupled to an input of the impedance matching circuitry and the second GaN transistor comprises a contact that is coupled to an output of the impedance matching circuitry, wherein the RFIC is conﬁgured to receive and amplify a low-level WiFi signal and to generate a WiFi transmit signal, and wherein the monolithic semiconductor structure is built on a silicon carbide (SiC) substrate, comprises includes a GaN channel layer on the silicon carbide a substrate and an AlGaN barrier layer on the GaN channel layer, and a plurality of regions corresponding to ones of the one or more ﬁrst and second GaN transistors and the impedance matching circuitry.
1. 2
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 1 wherein the RFIC has an error vector magnitude less than about -30 dBc, an average power output around 29 dBm, and an average power added eﬃciency greater than about 27%.
2. 8
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RF I C of claim 1 wherein the RFIC has a die size less than about 1.5 mm by about 0.9 mm.
3. 9
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 1 wherein the ﬁrst and second one or more GaN transistors are high electron mobility transistors (HEMTs).
4. 10
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 1 wherein the WiFi transmit signal is an IEEE 802. 11 ac WiFi signal.
5. 11
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RF I C of claim 1 wherein the RFIC comprises includes one or more of a group comprising power detector circuitry and gain control circuitry.
6. 12
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 1 wherein the RF I C is capable of transmitting signals at a speed greater than 1 Gbps.
7. 36
  Dependent← claim 1GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 1, wherein the monolithic semiconductor structure comprises: a ﬁrst region corresponding to [[a]] the ﬁrst GaN transistor of the one or more GaN transistors; a second region corresponding to [[a]] the second GaN transistor of the one or more GaN transistors; and a matching component area that corresponds to impedance matching circuitry and that is between the ﬁrst region and the second region.
5
Independent
5-7. canceled
6
Independent
canceled
7
Independent
canceled
13
IndependentGaNGaN RF integrated circuit (RFIC) for WiFi
A gallium nitride (GaN) radio frequency integrated circuit (RFIC) for use in a WiFi transmitter comprising: a ﬁrst GaN transistor that is coupled to a power ampliﬁer input interface of the WiFi transmitter; a second GaN transistor that is coupled to a power ampliﬁer output interface of the WiFi transmitter; and impedance matching circuitry coupled in series with and between the ﬁrst and second GaN transistors.
1. 14
  Dependent← claim 13GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 13 wherein the RFIC has an error vector magnitude less than about -30 dBc, an average power output around 29 dBm, and an average power added eﬃciency of greater than about 27%.
2. 17
  Dependent← claim 13GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 13 wherein the RFIC is a monolithic semiconductor structure.
3. 20
  Dependent← claim 13GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 13 wherein the ﬁrst and second GaN transistors are high electron mobility transistors (HEMTs).
4. 21
  Dependent← claim 13GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 13 wherein the WiFi transmitter transmits IEEE 802. 11 ac WiFi signals.
5. 22
  Dependent← claim 13GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 13 further comprising one or more of a group comprising power detector circuitry and gain control circuitry.
6. 23
  Dependent← claim 13GaN RF integrated circuit (RFIC) for WiFi
  The RFIC of claim 13 wherein the RFIC is capable of transmitting signals at a speed greater than 1 Gbps.
24
IndependentGaNwireless access point with GaN RFIC
A wireless access point comprising: a baseband processor; In re: William Pribble et al. U.S. Serial No. 14/251,1 12 Filed: Page 5of 12 a ﬁrst radio frequency integrated circuit (RFIC) conﬁgured to receive and amplify a low-level long term evolution (LTE) signal from the baseband processor to generate an LTE transmit signal; and a second gallium nitride (GaN) RFIC conﬁgured to receive and amplify a low-level WiFi signal from the baseband processor to generate a WiFi transmit signal, wherein the second GaN RFIC comprises: a ﬁrst GaN transistor that is coupled to a power ampliﬁer input interface of a WiFi transmitter; a second GaN transistor that is coupled to a power ampliﬁer output interface of the WiFi transmitter; and a ﬁrst impedance matching circuit that is coupled between a contact of the ﬁrst GaN transistor and a contact of the second GaN transistor.
1. 25
  Dependent← claim 24wireless access point with GaN RFIC
  The wireless access point of claim 24 wherein the second RF I C has an error vector magnitude less than about -30 dBc, an average power output around 29 dBm, and an average power added eﬃciency greater than about 27%.
2. 28
  Dependent← claim 24wireless access point with GaN RFIC
  The wireless access point of claim 24 wherein the second RF I C comprises impedance matching circuitry coupled in series with the ﬁrst and second GaN transistors.
3. 33
  Dependent← claim 24wireless access point with GaN RFIC
  The wireless access point of claim 24 wherein the WiFi transmit signal is an IEEE 802.11 ac WiFi signal.
4. 34
  Dependent← claim 24wireless access point with GaN RFIC
  The wireless access point of claim 24 wherein the second RFIC comprises includes one or more of a group comprising power detector circuitry and gain control circuitry.
5. 35
  Dependent← claim 24wireless access point with GaN RFIC
  The wireless access point of claim 24 wherein the wireless access point is capable of transmitting signals at a speed greater than 1 Gbps.
6. 38
  Dependent← claim 24wireless access point with GaN RFIC
  The wireless access point of Claim 24, further comprising: a second impedance matching circuit that is between the ﬁrst GaN transistor and the power ampliﬁer input interface of the WiFi transmitter; and a third impedance matching circuit that is between the second GaN transistor and the power ampliﬁer output interface of the WiFi transmitter.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN RF integrated circuit (RFIC) for WiFi

AlGaNbarrier

GaNchannel

SiCsubstrate

wireless access point with GaN RFIC

No layer stack recorded.

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Transistor Channel Material

Channel Layer

AlGaN barrier layer

AlGaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
EVM	<-30 dBc	—
average power output	~29 dBm	—
average PAE

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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