A finned field effect transistor (FinFET) high electron mobility transistor (HEMT) device comprising: a substrate; a fin etched on the substrate, the fin comprising a channel layer, a first end and a second end; a source fabricated on the substrate and connected to the first end of the fins; a drain fabricated on the substrate and connected to a second end of the fins; and a gate between the source and the drain and extending to three sides of the fin, wherein the gate is fabricated by chemical mechanical planarization (CMP) of a dielectric layer to an upper surface of a sacrificial gate, removing a sacrificial gate to form a gate foot opening and forming a gate foot at least partially in the gate foot opening. Withdrawn

(Currently amended) A method of making a finned field effect transistor (FinFET) high electron mobility transistor (H EMT) device comprising: forming a self-aligned gate by a self-aligned fabrication process, wherein the gate and/or one or more gate sidewalls define the gate-source or gate-drain spacing, the self-aligned fabrication process comprising: forming a sacrificial gate across a fin, wherein the fin comprises an H EMT channel layer; adding a first f the one or more gate side walls to a first side of the fin facing a source and a second of the gate sidewalls to a second side of the fin facing a drain, wherein a source-facing side of the first gate sidewall is aligned with a source-facing side of the fin and a drain-facing side of the second gate sidewall is aligned with a drain-facing side of the fin; growing source and drain contacts on either side of the sacrificial gate, wherein the source or the drain contact is aligned with the respective source-facing side or the drain-facing side of the fin; forming a dielectric layer on the first and second gate side walls, the source and drain contacts and the sacrificial gate; chemical mechanical planarization (C M P) of the dielectric layer to an upper surface of the sacrificial gate; removing the sacrificial gate resulting in a gatefoot opening; forming a gate by steps comprising: metalizing the gatefoot opening; and forming a gate head over the metalized gatefoot opening; and forming source and drain ohmic contacts in electrical communication with the source and drain contacts, respectively. Currently amended

The method of making a FinFET HEMT device contacts regrowth on the source and the drain.

The method of making a FinFET HEMT device Original

A finned field effect transistor (FinFET) high electron mobility transistor (HEMT) device comprising: a substrate; a fin etched on the substrate, the fin comprising a channel layer, a first end and a second end; a source fabricated on the substrate and connected to the first end of the fins; a drain fabricated on the substrate and connected to a second end of the fins; and a gate between the source and the drain and extending to three sides of the fin, wherein the gate is fabricated by chemical mechanical planarization (CMP) of a dielectric layer to an upper surface of a sacrificial gate, removing a sacrificial gate to form a gate foot opening and forming a gate foot at least partially in the gate foot opening. Withdrawn

(Currently amended) A method of making a finned field effect transistor (FinFET) high electron mobility transistor (H EMT) device comprising: forming a self-aligned gate by a self-aligned fabrication process, wherein the gate and/or one or more gate sidewalls define the gate-source or gate-drain spacing, the self-aligned fabrication process comprising: forming a sacrificial gate across a fin, wherein the fin comprises an H EMT channel layer; adding a first f the one or more gate side walls to a first side of the fin facing a source and a second of the gate sidewalls to a second side of the fin facing a drain, wherein a source-facing side of the first gate sidewall is aligned with a source-facing side of the fin and a drain-facing side of the second gate sidewall is aligned with a drain-facing side of the fin; growing source and drain contacts on either side of the sacrificial gate, wherein the source or the drain contact is aligned with the respective source-facing side or the drain-facing side of the fin; forming a dielectric layer on the first and second gate side walls, the source and drain contacts and the sacrificial gate; chemical mechanical planarization (C M P) of the dielectric layer to an upper surface of the sacrificial gate; removing the sacrificial gate resulting in a gatefoot opening; forming a gate by steps comprising: metalizing the gatefoot opening; and forming a gate head over the metalized gatefoot opening; and forming source and drain ohmic contacts in electrical communication with the source and drain contacts, respectively. Currently amended

The method of making a FinFET HEMT device contacts regrowth on the source and the drain.

The method of making a FinFET HEMT device Original

A finned field effect transistor (FinFET) high electron mobility transistor (HEMT) device comprising: a substrate; a fin etched on the substrate, the fin comprising a channel layer, a first end and a second end; a source fabricated on the substrate and connected to the first end of the fins; a drain fabricated on the substrate and connected to a second end of the fins; and a gate between the source and the drain and extending to three sides of the fin, wherein the gate is fabricated by chemical mechanical planarization (CMP) of a dielectric layer to an upper surface of a sacrificial gate, removing a sacrificial gate to form a gate foot opening and forming a gate foot at least partially in the gate foot opening. Withdrawn

(Currently amended) A method of making a finned field effect transistor (FinFET) high electron mobility transistor (H EMT) device comprising: forming a self-aligned gate by a self-aligned fabrication process, wherein the gate and/or one or more gate sidewalls define the gate-source or gate-drain spacing, the self-aligned fabrication process comprising: forming a sacrificial gate across a fin, wherein the fin comprises an H EMT channel layer; adding a first f the one or more gate side walls to a first side of the fin facing a source and a second of the gate sidewalls to a second side of the fin facing a drain, wherein a source-facing side of the first gate sidewall is aligned with a source-facing side of the fin and a drain-facing side of the second gate sidewall is aligned with a drain-facing side of the fin; growing source and drain contacts on either side of the sacrificial gate, wherein the source or the drain contact is aligned with the respective source-facing side or the drain-facing side of the fin; forming a dielectric layer on the first and second gate side walls, the source and drain contacts and the sacrificial gate; chemical mechanical planarization (C M P) of the dielectric layer to an upper surface of the sacrificial gate; removing the sacrificial gate resulting in a gatefoot opening; forming a gate by steps comprising: metalizing the gatefoot opening; and forming a gate head over the metalized gatefoot opening; and forming source and drain ohmic contacts in electrical communication with the source and drain contacts, respectively. Currently amended

The method of making a FinFET HEMT device contacts regrowth on the source and the drain.

The method of making a FinFET HEMT device Original

A finned field effect transistor (FinFET) high electron mobility transistor (HEMT) device comprising: a substrate; a fin etched on the substrate, the fin comprising a channel layer, a first end and a second end; a source fabricated on the substrate and connected to the first end of the fins; a drain fabricated on the substrate and connected to a second end of the fins; and a gate between the source and the drain and extending to three sides of the fin, wherein the gate is fabricated by chemical mechanical planarization (CMP) of a dielectric layer to an upper surface of a sacrificial gate, removing a sacrificial gate to form a gate foot opening and forming a gate foot at least partially in the gate foot opening. Withdrawn

(Currently amended) A method of making a finned field effect transistor (FinFET) high electron mobility transistor (H EMT) device comprising: forming a self-aligned gate by a self-aligned fabrication process, wherein the gate and/or one or more gate sidewalls define the gate-source or gate-drain spacing, the self-aligned fabrication process comprising: forming a sacrificial gate across a fin, wherein the fin comprises an H EMT channel layer; adding a first f the one or more gate side walls to a first side of the fin facing a source and a second of the gate sidewalls to a second side of the fin facing a drain, wherein a source-facing side of the first gate sidewall is aligned with a source-facing side of the fin and a drain-facing side of the second gate sidewall is aligned with a drain-facing side of the fin; growing source and drain contacts on either side of the sacrificial gate, wherein the source or the drain contact is aligned with the respective source-facing side or the drain-facing side of the fin; forming a dielectric layer on the first and second gate side walls, the source and drain contacts and the sacrificial gate; chemical mechanical planarization (C M P) of the dielectric layer to an upper surface of the sacrificial gate; removing the sacrificial gate resulting in a gatefoot opening; forming a gate by steps comprising: metalizing the gatefoot opening; and forming a gate head over the metalized gatefoot opening; and forming source and drain ohmic contacts in electrical communication with the source and drain contacts, respectively. Currently amended

The method of making a FinFET HEMT device contacts regrowth on the source and the drain.

The method of making a FinFET HEMT device Original