HYBRID POWER AMPLIFIER WITH GAN-ON-SI AND GAN-ON-SIC CIRCUITS | Matter42 Literature
Patent
Atlas literature
Patent
US 12,028,022 B2
HYBRID POWER AMPLIFIER WITH GAN-ON-SI AND GAN-ON-SIC CIRCUITS
Prity Kirit Patel
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)·Jul. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified circuit diagram of a Doherty power amplifier in the related art.
FIG. 2
FIG. 2 is a schematic diagram of a power amplifier in accordance with various embodiments of the present disclo- sure.
FIG. 3
FIG. 3 is a package layout for a power amplifier package that includes a main amplifier circuit and a peaking amplifier circuit in accordance with various …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 4 dependent
1
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A power amplifier for amplifying an input signal to an 30 the Doherty power amplifier is disposed on a printed output signal, comprising: circuit board (PCB); and a peaking amplifier circuit, wherein the peaking amplifier a pre-driver amplifier circuit is positioned on the PCB circuit is formed in gallium nitride materials on a having an output coupled to an input of the RF power silicon substrate; and amplifier, the output feeding the main amplifier circuit a main amplifier circuit, wherein the main amplifier 35 and the peaking amplifier circuit. circuit is formed in gallium nitride materials on a
16
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A method for amplifying an input signal to an output silicon carbide substrate. signal, comprising:
17
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein the single
18
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, further comprising amplifier circuit. providing a pre-driver amplifier circuit in the single package
20
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein at least the power amplifier is disposed on a printed circuit board peaking amplifier circuit and the main amplifier circuit (PCB); and together form a Doherty power amplifier. a pre-driver amplifier circuit is positioned on the PCB having an output coupled to an input of the power ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Hybrid Doherty power amplifier
SiCmain amplifier substrate
GaNmain amplifier circuit
Sipeaking amplifier substrate
GaNpeaking amplifier circuit
Materials
Materials described outside the worked examples.
gallium nitride on silicon
GaN
Peaking Amplifier Circuit Material
Main Amplifier Circuit Material
silicon substrate
Si
Substrate For Peaking Amplifier And Pre Driver
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 137
US 4,375,054 A4,375,054 A 2/1983 Pavio
US 6,085,074 A6,085,074 A 7/2000 Cygan
US 6,262,629 B16,262,629 B1 7/2001 Stengel et al.
US 6,649,287 B26,649,287 B2 11/2003 Weeks et al.
US 6,791,417 B26,791,417 B2 9/2004 Pengelly et al.
US 7,078,976 B27,078,976 B2 7/2006 Blednov
US 7,109,790 B27,109,790 B2 9/2006 Kwon et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
HYBRID POWER AMPLIFIER WITH GAN-ON-SI AND GAN-ON-SIC CIRCUITS
Prity Kirit Patel
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)·Jul. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified circuit diagram of a Doherty power amplifier in the related art.
FIG. 2
FIG. 2 is a schematic diagram of a power amplifier in accordance with various embodiments of the present disclo- sure.
FIG. 3
FIG. 3 is a package layout for a power amplifier package that includes a main amplifier circuit and a peaking amplifier circuit in accordance with various …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 4 dependent
1
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A power amplifier for amplifying an input signal to an 30 the Doherty power amplifier is disposed on a printed output signal, comprising: circuit board (PCB); and a peaking amplifier circuit, wherein the peaking amplifier a pre-driver amplifier circuit is positioned on the PCB circuit is formed in gallium nitride materials on a having an output coupled to an input of the RF power silicon substrate; and amplifier, the output feeding the main amplifier circuit a main amplifier circuit, wherein the main amplifier 35 and the peaking amplifier circuit. circuit is formed in gallium nitride materials on a
16
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A method for amplifying an input signal to an output silicon carbide substrate. signal, comprising:
17
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein the single
18
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, further comprising amplifier circuit. providing a pre-driver amplifier circuit in the single package
20
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein at least the power amplifier is disposed on a printed circuit board peaking amplifier circuit and the main amplifier circuit (PCB); and together form a Doherty power amplifier. a pre-driver amplifier circuit is positioned on the PCB having an output coupled to an input of the power ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Hybrid Doherty power amplifier
SiCmain amplifier substrate
GaNmain amplifier circuit
Sipeaking amplifier substrate
GaNpeaking amplifier circuit
Materials
Materials described outside the worked examples.
gallium nitride on silicon
GaN
Peaking Amplifier Circuit Material
Main Amplifier Circuit Material
silicon substrate
Si
Substrate For Peaking Amplifier And Pre Driver
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 137
US 4,375,054 A4,375,054 A 2/1983 Pavio
US 6,085,074 A6,085,074 A 7/2000 Cygan
US 6,262,629 B16,262,629 B1 7/2001 Stengel et al.
US 6,649,287 B26,649,287 B2 11/2003 Weeks et al.
US 6,791,417 B26,791,417 B2 9/2004 Pengelly et al.
US 7,078,976 B27,078,976 B2 7/2006 Blednov
US 7,109,790 B27,109,790 B2 9/2006 Kwon et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
HYBRID POWER AMPLIFIER WITH GAN-ON-SI AND GAN-ON-SIC CIRCUITS
Prity Kirit Patel
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)·Jul. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified circuit diagram of a Doherty power amplifier in the related art.
FIG. 2
FIG. 2 is a schematic diagram of a power amplifier in accordance with various embodiments of the present disclo- sure.
FIG. 3
FIG. 3 is a package layout for a power amplifier package that includes a main amplifier circuit and a peaking amplifier circuit in accordance with various …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 4 dependent
1
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A power amplifier for amplifying an input signal to an 30 the Doherty power amplifier is disposed on a printed output signal, comprising: circuit board (PCB); and a peaking amplifier circuit, wherein the peaking amplifier a pre-driver amplifier circuit is positioned on the PCB circuit is formed in gallium nitride materials on a having an output coupled to an input of the RF power silicon substrate; and amplifier, the output feeding the main amplifier circuit a main amplifier circuit, wherein the main amplifier 35 and the peaking amplifier circuit. circuit is formed in gallium nitride materials on a
16
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A method for amplifying an input signal to an output silicon carbide substrate. signal, comprising:
17
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein the single
18
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, further comprising amplifier circuit. providing a pre-driver amplifier circuit in the single package
20
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein at least the power amplifier is disposed on a printed circuit board peaking amplifier circuit and the main amplifier circuit (PCB); and together form a Doherty power amplifier. a pre-driver amplifier circuit is positioned on the PCB having an output coupled to an input of the power ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Hybrid Doherty power amplifier
SiCmain amplifier substrate
GaNmain amplifier circuit
Sipeaking amplifier substrate
GaNpeaking amplifier circuit
Materials
Materials described outside the worked examples.
gallium nitride on silicon
GaN
Peaking Amplifier Circuit Material
Main Amplifier Circuit Material
silicon substrate
Si
Substrate For Peaking Amplifier And Pre Driver
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 137
US 4,375,054 A4,375,054 A 2/1983 Pavio
US 6,085,074 A6,085,074 A 7/2000 Cygan
US 6,262,629 B16,262,629 B1 7/2001 Stengel et al.
US 6,649,287 B26,649,287 B2 11/2003 Weeks et al.
US 6,791,417 B26,791,417 B2 9/2004 Pengelly et al.
US 7,078,976 B27,078,976 B2 7/2006 Blednov
US 7,109,790 B27,109,790 B2 9/2006 Kwon et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
HYBRID POWER AMPLIFIER WITH GAN-ON-SI AND GAN-ON-SIC CIRCUITS
Prity Kirit Patel
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)·Jul. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified circuit diagram of a Doherty power amplifier in the related art.
FIG. 2
FIG. 2 is a schematic diagram of a power amplifier in accordance with various embodiments of the present disclo- sure.
FIG. 3
FIG. 3 is a package layout for a power amplifier package that includes a main amplifier circuit and a peaking amplifier circuit in accordance with various …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 4 dependent
1
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A power amplifier for amplifying an input signal to an 30 the Doherty power amplifier is disposed on a printed output signal, comprising: circuit board (PCB); and a peaking amplifier circuit, wherein the peaking amplifier a pre-driver amplifier circuit is positioned on the PCB circuit is formed in gallium nitride materials on a having an output coupled to an input of the RF power silicon substrate; and amplifier, the output feeding the main amplifier circuit a main amplifier circuit, wherein the main amplifier 35 and the peaking amplifier circuit. circuit is formed in gallium nitride materials on a
16
IndependentGaNSiGaNSiCHybrid Doherty power amplifier
A method for amplifying an input signal to an output silicon carbide substrate. signal, comprising:
17
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein the single
18
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, further comprising amplifier circuit. providing a pre-driver amplifier circuit in the single package
20
Dependent← claim 16Hybrid Doherty power amplifier
The method according to claim 16, wherein at least the power amplifier is disposed on a printed circuit board peaking amplifier circuit and the main amplifier circuit (PCB); and together form a Doherty power amplifier. a pre-driver amplifier circuit is positioned on the PCB having an output coupled to an input of the power ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Hybrid Doherty power amplifier
SiCmain amplifier substrate
GaNmain amplifier circuit
Sipeaking amplifier substrate
GaNpeaking amplifier circuit
Materials
Materials described outside the worked examples.
gallium nitride on silicon
GaN
Peaking Amplifier Circuit Material
Main Amplifier Circuit Material
silicon substrate
Si
Substrate For Peaking Amplifier And Pre Driver
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 137
US 4,375,054 A4,375,054 A 2/1983 Pavio
US 6,085,074 A6,085,074 A 7/2000 Cygan
US 6,262,629 B16,262,629 B1 7/2001 Stengel et al.
US 6,649,287 B26,649,287 B2 11/2003 Weeks et al.
US 6,791,417 B26,791,417 B2 9/2004 Pengelly et al.
US 7,078,976 B27,078,976 B2 7/2006 Blednov
US 7,109,790 B27,109,790 B2 9/2006 Kwon et al.
Why these are connected
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A Design Strategy for Bandwidth Enhance- ment in Three-Stage Doherty Power Amplifier With Extended Dynamic Range. Barthwal Ayushi et al., “A Design Strategy for Bandwidth Enhance- ment in Three-Stage Doherty Power Amplifier With Extended Dynamic Range”, IEEE Transactions on Microwave Theory and
7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off. Camarchia et al., “7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off,” IEEE Microwave and Wireless Components Letters. Jan. 2013.
Refine Biasing Networks for High PA Low Fre- quency Stability. Ceylan et al., “Refine Biasing Networks for High PA Low Fre- quency Stability,” Microwave & RF, Apr. 17, 2018, pp. 1-6.
GaN HEMT Based Doherty Broadband Power Amplifier. Cheng et al., “GaN HEMT Based Doherty Broadband Power Amplifier,” Journal of Hangzhou Dianzi University (Natural Sci- ences), Mar. 15, 2017.
Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High- Power Amplifier Design. Cidronali et al., “Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High- Power Amplifier Design,” IEEE Transactions on Microwave Theory and Techniques. May 2016; 64(5):1359-72.
30.3% PAE HBT Doherty power amplifier for 2.5-2.7 GHZ mobile WiMAX. Daehyun Kang et al., “30.3% PAE HBT Doherty power amplifier for 2.5-2.7 GHZ mobile WiMAX,” Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, IEEE, Piscataway, NJ,
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Doherty Linear Power Amplifiers for Mobile Handset Applications. Proceedings of Asia-Pacific Microwave Conference. Kim et al., “Doherty Linear Power Amplifiers for Mobile Handset Applications. Proceedings of Asia-Pacific Microwave Conference,” Dec. 2006; 1885-94. Merrick B et al., “A wideband Sequential Power Amplifier”, 2014 IEEE Mtt-S International Microwave Symposium (IMS2014), IEEE, (Jun. 1, 2014), doi:10.1109/MWSYM.2014.6848592, pp. 1-3, XP032615303.10.1109/MWSYM.2014.6848592
A100 W Multi-Band Four-Way Integrated Doherty Amplifier. Moronval et al., “A100 W Multi-Band Four-Way Integrated Doherty Amplifier,” IEEE MTT-S International Microwave Symposium (IMS) May 22, 2016: 1-3.
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver. Quaglia et al., “K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver,” IEEE Transactions on Microwave Theory and Techmques. Nov. 2014; 62(11):2518-25. Roberts Michael James, “Understanding the 3 level Doherty”, 2016 11TH European Microwave Integrated Circuits Conference (EUMIC), European Microwave Association, (Oct. 3, 2016), doi:10.1109/EUMIC.2016.7777583, pp. 428-432.10.1109/EUMIC.2016.7777583
Fully integrated three-way LDMOS Doherty PAs for 1.8-2.2 GHZ dual-band and 2.6 GHz m-MIMO 5G applica- tions. Vigneau et al., “Fully integrated three-way LDMOS Doherty PAs for 1.8-2.2 GHZ dual-band and 2.6 GHz m-MIMO 5G applica- tions,” Published in International Journal of Microwave and Wire- less Technologies, Mar. 1, 2021. Wicks B et al., “A 60-GHz fully-integrated Doherty power amplifier based on 0.13-um CMOS process,” Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, IEEE, Piscataway, NJ, USA, (Jun. 17, 2008), ISBN 978-1-4244-1808-4, pp. 69-72. Xia Jing et al., “Improved Three-Stage Doherty Amplifier Design With Impedance Compensation in Load Combiner for Broadband Applications”, IEEE Transactions On Microwave Theory and Tech- niques, Plenum, USA, vol. 67, No. 2, doi:10.1109/TMTT.2018. 2884404, ISSN 0018-9480, (Feb. 1, 2019), pp. 778-786.10.1109/TMTT.2018
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Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications. Zhou et al., “Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications,” Progress in Electromagnetics Research Letters. 2013; 39:73-80.
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A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems. Andrei Grebennikov, “A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems”, 2011 IEEE MTT-S International Microwave Symposium.
A Design Strategy for Bandwidth Enhance- ment in Three-Stage Doherty Power Amplifier With Extended Dynamic Range. Barthwal Ayushi et al., “A Design Strategy for Bandwidth Enhance- ment in Three-Stage Doherty Power Amplifier With Extended Dynamic Range”, IEEE Transactions on Microwave Theory and
7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off. Camarchia et al., “7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off,” IEEE Microwave and Wireless Components Letters. Jan. 2013.
Refine Biasing Networks for High PA Low Fre- quency Stability. Ceylan et al., “Refine Biasing Networks for High PA Low Fre- quency Stability,” Microwave & RF, Apr. 17, 2018, pp. 1-6.
GaN HEMT Based Doherty Broadband Power Amplifier. Cheng et al., “GaN HEMT Based Doherty Broadband Power Amplifier,” Journal of Hangzhou Dianzi University (Natural Sci- ences), Mar. 15, 2017.
Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High- Power Amplifier Design. Cidronali et al., “Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High- Power Amplifier Design,” IEEE Transactions on Microwave Theory and Techniques. May 2016; 64(5):1359-72.
30.3% PAE HBT Doherty power amplifier for 2.5-2.7 GHZ mobile WiMAX. Daehyun Kang et al., “30.3% PAE HBT Doherty power amplifier for 2.5-2.7 GHZ mobile WiMAX,” Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, IEEE, Piscataway, NJ,
Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs. USA, Piscataway, NJ, USA, (May 23, 2010), ISBN 978-1-4244- 6056-4, pp. 796-799. Daekyu Yu et al., “Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs”, Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE, IEEE, Piscataway, NJ, USA, (Jun. 11, 2006), doi:10.1109/RFIC.2006.1651114, ISBN 978-0-7803-9572-5, pp. 153-156. Daniel Popp et al., “High Power and High Bandwidth Digital Three-Way Doherty Power Amplifier”, 2019 IEEE 20TH Wireless and Microwave Technology Conference (WAMICON), IEEE, (Apr. 8, 2019), doi: 10.1109/WAMICON.2019.8765455, pp. 1-6, XP033577671.10.1109/RFIC.2006.1651114
High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modem Trends. Grebennikov et al., “High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modem Trends,” Proceedings of the IEEE. Dec. 2012; 100(12):3190-219.
Doherty Linear Power Amplifiers for Mobile Handset Applications. Proceedings of Asia-Pacific Microwave Conference. Kim et al., “Doherty Linear Power Amplifiers for Mobile Handset Applications. Proceedings of Asia-Pacific Microwave Conference,” Dec. 2006; 1885-94. Merrick B et al., “A wideband Sequential Power Amplifier”, 2014 IEEE Mtt-S International Microwave Symposium (IMS2014), IEEE, (Jun. 1, 2014), doi:10.1109/MWSYM.2014.6848592, pp. 1-3, XP032615303.10.1109/MWSYM.2014.6848592
A100 W Multi-Band Four-Way Integrated Doherty Amplifier. Moronval et al., “A100 W Multi-Band Four-Way Integrated Doherty Amplifier,” IEEE MTT-S International Microwave Symposium (IMS) May 22, 2016: 1-3.
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver. Quaglia et al., “K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver,” IEEE Transactions on Microwave Theory and Techmques. Nov. 2014; 62(11):2518-25. Roberts Michael James, “Understanding the 3 level Doherty”, 2016 11TH European Microwave Integrated Circuits Conference (EUMIC), European Microwave Association, (Oct. 3, 2016), doi:10.1109/EUMIC.2016.7777583, pp. 428-432.10.1109/EUMIC.2016.7777583
Fully integrated three-way LDMOS Doherty PAs for 1.8-2.2 GHZ dual-band and 2.6 GHz m-MIMO 5G applica- tions. Vigneau et al., “Fully integrated three-way LDMOS Doherty PAs for 1.8-2.2 GHZ dual-band and 2.6 GHz m-MIMO 5G applica- tions,” Published in International Journal of Microwave and Wire- less Technologies, Mar. 1, 2021. Wicks B et al., “A 60-GHz fully-integrated Doherty power amplifier based on 0.13-um CMOS process,” Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, IEEE, Piscataway, NJ, USA, (Jun. 17, 2008), ISBN 978-1-4244-1808-4, pp. 69-72. Xia Jing et al., “Improved Three-Stage Doherty Amplifier Design With Impedance Compensation in Load Combiner for Broadband Applications”, IEEE Transactions On Microwave Theory and Tech- niques, Plenum, USA, vol. 67, No. 2, doi:10.1109/TMTT.2018. 2884404, ISSN 0018-9480, (Feb. 1, 2019), pp. 778-786.10.1109/TMTT.2018
Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs. Yu et al., “Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs,” IEEE Radio Frequency Integrated Circuits Sym- posium (RFIC). Jun. 11, 2006; 153-6.
Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications. Zhou et al., “Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications,” Progress in Electromagnetics Research Letters. 2013; 39:73-80.
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Cited non-patent literature · 16
A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems. Andrei Grebennikov, “A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems”, 2011 IEEE MTT-S International Microwave Symposium.
A Design Strategy for Bandwidth Enhance- ment in Three-Stage Doherty Power Amplifier With Extended Dynamic Range. Barthwal Ayushi et al., “A Design Strategy for Bandwidth Enhance- ment in Three-Stage Doherty Power Amplifier With Extended Dynamic Range”, IEEE Transactions on Microwave Theory and
7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off. Camarchia et al., “7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off,” IEEE Microwave and Wireless Components Letters. Jan. 2013.
Refine Biasing Networks for High PA Low Fre- quency Stability. Ceylan et al., “Refine Biasing Networks for High PA Low Fre- quency Stability,” Microwave & RF, Apr. 17, 2018, pp. 1-6.
GaN HEMT Based Doherty Broadband Power Amplifier. Cheng et al., “GaN HEMT Based Doherty Broadband Power Amplifier,” Journal of Hangzhou Dianzi University (Natural Sci- ences), Mar. 15, 2017.
Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High- Power Amplifier Design. Cidronali et al., “Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High- Power Amplifier Design,” IEEE Transactions on Microwave Theory and Techniques. May 2016; 64(5):1359-72.
30.3% PAE HBT Doherty power amplifier for 2.5-2.7 GHZ mobile WiMAX. Daehyun Kang et al., “30.3% PAE HBT Doherty power amplifier for 2.5-2.7 GHZ mobile WiMAX,” Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, IEEE, Piscataway, NJ,
Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs. USA, Piscataway, NJ, USA, (May 23, 2010), ISBN 978-1-4244- 6056-4, pp. 796-799. Daekyu Yu et al., “Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs”, Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE, IEEE, Piscataway, NJ, USA, (Jun. 11, 2006), doi:10.1109/RFIC.2006.1651114, ISBN 978-0-7803-9572-5, pp. 153-156. Daniel Popp et al., “High Power and High Bandwidth Digital Three-Way Doherty Power Amplifier”, 2019 IEEE 20TH Wireless and Microwave Technology Conference (WAMICON), IEEE, (Apr. 8, 2019), doi: 10.1109/WAMICON.2019.8765455, pp. 1-6, XP033577671.10.1109/RFIC.2006.1651114
High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modem Trends. Grebennikov et al., “High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modem Trends,” Proceedings of the IEEE. Dec. 2012; 100(12):3190-219.
Doherty Linear Power Amplifiers for Mobile Handset Applications. Proceedings of Asia-Pacific Microwave Conference. Kim et al., “Doherty Linear Power Amplifiers for Mobile Handset Applications. Proceedings of Asia-Pacific Microwave Conference,” Dec. 2006; 1885-94. Merrick B et al., “A wideband Sequential Power Amplifier”, 2014 IEEE Mtt-S International Microwave Symposium (IMS2014), IEEE, (Jun. 1, 2014), doi:10.1109/MWSYM.2014.6848592, pp. 1-3, XP032615303.10.1109/MWSYM.2014.6848592
A100 W Multi-Band Four-Way Integrated Doherty Amplifier. Moronval et al., “A100 W Multi-Band Four-Way Integrated Doherty Amplifier,” IEEE MTT-S International Microwave Symposium (IMS) May 22, 2016: 1-3.
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver. Quaglia et al., “K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver,” IEEE Transactions on Microwave Theory and Techmques. Nov. 2014; 62(11):2518-25. Roberts Michael James, “Understanding the 3 level Doherty”, 2016 11TH European Microwave Integrated Circuits Conference (EUMIC), European Microwave Association, (Oct. 3, 2016), doi:10.1109/EUMIC.2016.7777583, pp. 428-432.10.1109/EUMIC.2016.7777583
Fully integrated three-way LDMOS Doherty PAs for 1.8-2.2 GHZ dual-band and 2.6 GHz m-MIMO 5G applica- tions. Vigneau et al., “Fully integrated three-way LDMOS Doherty PAs for 1.8-2.2 GHZ dual-band and 2.6 GHz m-MIMO 5G applica- tions,” Published in International Journal of Microwave and Wire- less Technologies, Mar. 1, 2021. Wicks B et al., “A 60-GHz fully-integrated Doherty power amplifier based on 0.13-um CMOS process,” Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, IEEE, Piscataway, NJ, USA, (Jun. 17, 2008), ISBN 978-1-4244-1808-4, pp. 69-72. Xia Jing et al., “Improved Three-Stage Doherty Amplifier Design With Impedance Compensation in Load Combiner for Broadband Applications”, IEEE Transactions On Microwave Theory and Tech- niques, Plenum, USA, vol. 67, No. 2, doi:10.1109/TMTT.2018. 2884404, ISSN 0018-9480, (Feb. 1, 2019), pp. 778-786.10.1109/TMTT.2018
Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs. Yu et al., “Fully Integrated Doherty Power Amplifiers for 5 GHz Wireless-LANs,” IEEE Radio Frequency Integrated Circuits Sym- posium (RFIC). Jun. 11, 2006; 153-6.
Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications. Zhou et al., “Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications,” Progress in Electromagnetics Research Letters. 2013; 39:73-80.
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