Patent
US 8,791,468GALLIUM NITRIDE FILM STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Joo-ho Lee
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,791,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views illustrating a method of fabricating a gallium nitride (GaN) thin layer, according to an example embodiment; …
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
FIGS. 4A through 4H are cross-sectional views illustrating a method of fabricating a semiconductor light emission device according to an example embodiment; …
FIG. 5 is a cross-sectional view of a piezoelectric sensor fabricated using a GaN thin layer grown using the method shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gal li um nit n de (GaN) film structure comp nsing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; an electrode layer d ispeeed -in direct contact with en-the first buffer layer; a second buffer layer disposed on the electrode layer; and a GaN layer disposed on the second buffer layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(O rigin al) The structure of claim 1, where in the first buffer layer comprises at least one of aluminum nitride (A l N) and silicon ni tride (SiNX).
The structure of claim 1, wherein the electrode layer comprises at least one of molybdenum (Mo), titanium (T i), ruthenium (Ru), chrome nitride (CrN) and tantalum ni tride (TaN).
The structure of claim 1, wherein the second buffer layer comprises aluminum nitride (A l N).
The structure of claim 1, further comprising: a strain compensation layer interposed between the second buffer layer and the GaN layer.
A semiconductor device comp ri sing the GaN film structure of claim 1.
The structure of claim 1, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor light emission device comprising: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer disposed-ein direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; an n-GaN layer disposed on the second buffer layer; an active layer disposed on the n-GaN layer; a p-GaN layer disposed on the active layer; and a p-electrode layer disposed on the p-GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(Orig in al) The device of claim 8, wherein a portion of the lower electrode layer above one of the at least two support members is exposed.
The semiconductor light emission device of claim 8, further comprising: a strain compensation layer interposed between the second buffer layer and the n-GaN layer, the strain compensation layer formed of AlGaN.
The semiconductor light emission device of claim 8, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor light emission device of claim 8, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor piezoelectric sensor compris ing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer diposed-e in direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; a gal li um ni tride (GaN) layer disposed on the second buffer layer; and an upper electrode layer disposed on the GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer. 11-21..
The semiconductor piezoelectric sensor of claim 10, further comprising: a strain compensation layer in terposed between the second buffer layer and the GaN layer, the stra in compensation layer formed of AlGaN.
The semiconductor piezoelectric sensor of claim 10, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor piezoelectric sensor of claim 10, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar. *** END CLAIM LISTING
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Layer stacks claimed or described, ordered top of device to substrate.
GaN film structure
Materials described outside the worked examples.
gallium nitride
GaN
first buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,791,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views illustrating a method of fabricating a gallium nitride (GaN) thin layer, according to an example embodiment; …
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
FIGS. 4A through 4H are cross-sectional views illustrating a method of fabricating a semiconductor light emission device according to an example embodiment; …
FIG. 5 is a cross-sectional view of a piezoelectric sensor fabricated using a GaN thin layer grown using the method shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gal li um nit n de (GaN) film structure comp nsing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; an electrode layer d ispeeed -in direct contact with en-the first buffer layer; a second buffer layer disposed on the electrode layer; and a GaN layer disposed on the second buffer layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(O rigin al) The structure of claim 1, where in the first buffer layer comprises at least one of aluminum nitride (A l N) and silicon ni tride (SiNX).
The structure of claim 1, wherein the electrode layer comprises at least one of molybdenum (Mo), titanium (T i), ruthenium (Ru), chrome nitride (CrN) and tantalum ni tride (TaN).
The structure of claim 1, wherein the second buffer layer comprises aluminum nitride (A l N).
The structure of claim 1, further comprising: a strain compensation layer interposed between the second buffer layer and the GaN layer.
A semiconductor device comp ri sing the GaN film structure of claim 1.
The structure of claim 1, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor light emission device comprising: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer disposed-ein direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; an n-GaN layer disposed on the second buffer layer; an active layer disposed on the n-GaN layer; a p-GaN layer disposed on the active layer; and a p-electrode layer disposed on the p-GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(Orig in al) The device of claim 8, wherein a portion of the lower electrode layer above one of the at least two support members is exposed.
The semiconductor light emission device of claim 8, further comprising: a strain compensation layer interposed between the second buffer layer and the n-GaN layer, the strain compensation layer formed of AlGaN.
The semiconductor light emission device of claim 8, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor light emission device of claim 8, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor piezoelectric sensor compris ing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer diposed-e in direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; a gal li um ni tride (GaN) layer disposed on the second buffer layer; and an upper electrode layer disposed on the GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer. 11-21..
The semiconductor piezoelectric sensor of claim 10, further comprising: a strain compensation layer in terposed between the second buffer layer and the GaN layer, the stra in compensation layer formed of AlGaN.
The semiconductor piezoelectric sensor of claim 10, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor piezoelectric sensor of claim 10, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar. *** END CLAIM LISTING
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Layer stacks claimed or described, ordered top of device to substrate.
GaN film structure
Materials described outside the worked examples.
gallium nitride
GaN
first buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,791,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views illustrating a method of fabricating a gallium nitride (GaN) thin layer, according to an example embodiment; …
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
FIGS. 4A through 4H are cross-sectional views illustrating a method of fabricating a semiconductor light emission device according to an example embodiment; …
FIG. 5 is a cross-sectional view of a piezoelectric sensor fabricated using a GaN thin layer grown using the method shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gal li um nit n de (GaN) film structure comp nsing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; an electrode layer d ispeeed -in direct contact with en-the first buffer layer; a second buffer layer disposed on the electrode layer; and a GaN layer disposed on the second buffer layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(O rigin al) The structure of claim 1, where in the first buffer layer comprises at least one of aluminum nitride (A l N) and silicon ni tride (SiNX).
The structure of claim 1, wherein the electrode layer comprises at least one of molybdenum (Mo), titanium (T i), ruthenium (Ru), chrome nitride (CrN) and tantalum ni tride (TaN).
The structure of claim 1, wherein the second buffer layer comprises aluminum nitride (A l N).
The structure of claim 1, further comprising: a strain compensation layer interposed between the second buffer layer and the GaN layer.
A semiconductor device comp ri sing the GaN film structure of claim 1.
The structure of claim 1, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor light emission device comprising: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer disposed-ein direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; an n-GaN layer disposed on the second buffer layer; an active layer disposed on the n-GaN layer; a p-GaN layer disposed on the active layer; and a p-electrode layer disposed on the p-GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(Orig in al) The device of claim 8, wherein a portion of the lower electrode layer above one of the at least two support members is exposed.
The semiconductor light emission device of claim 8, further comprising: a strain compensation layer interposed between the second buffer layer and the n-GaN layer, the strain compensation layer formed of AlGaN.
The semiconductor light emission device of claim 8, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor light emission device of claim 8, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor piezoelectric sensor compris ing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer diposed-e in direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; a gal li um ni tride (GaN) layer disposed on the second buffer layer; and an upper electrode layer disposed on the GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer. 11-21..
The semiconductor piezoelectric sensor of claim 10, further comprising: a strain compensation layer in terposed between the second buffer layer and the GaN layer, the stra in compensation layer formed of AlGaN.
The semiconductor piezoelectric sensor of claim 10, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor piezoelectric sensor of claim 10, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar. *** END CLAIM LISTING
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Layer stacks claimed or described, ordered top of device to substrate.
GaN film structure
Materials described outside the worked examples.
gallium nitride
GaN
first buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,791,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views illustrating a method of fabricating a gallium nitride (GaN) thin layer, according to an example embodiment; …
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
FIGS. 4A through 4H are cross-sectional views illustrating a method of fabricating a semiconductor light emission device according to an example embodiment; …
FIG. 5 is a cross-sectional view of a piezoelectric sensor fabricated using a GaN thin layer grown using the method shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gal li um nit n de (GaN) film structure comp nsing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; an electrode layer d ispeeed -in direct contact with en-the first buffer layer; a second buffer layer disposed on the electrode layer; and a GaN layer disposed on the second buffer layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(O rigin al) The structure of claim 1, where in the first buffer layer comprises at least one of aluminum nitride (A l N) and silicon ni tride (SiNX).
The structure of claim 1, wherein the electrode layer comprises at least one of molybdenum (Mo), titanium (T i), ruthenium (Ru), chrome nitride (CrN) and tantalum ni tride (TaN).
The structure of claim 1, wherein the second buffer layer comprises aluminum nitride (A l N).
The structure of claim 1, further comprising: a strain compensation layer interposed between the second buffer layer and the GaN layer.
A semiconductor device comp ri sing the GaN film structure of claim 1.
The structure of claim 1, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor light emission device comprising: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer disposed-ein direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; an n-GaN layer disposed on the second buffer layer; an active layer disposed on the n-GaN layer; a p-GaN layer disposed on the active layer; and a p-electrode layer disposed on the p-GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.
(Orig in al) The device of claim 8, wherein a portion of the lower electrode layer above one of the at least two support members is exposed.
The semiconductor light emission device of claim 8, further comprising: a strain compensation layer interposed between the second buffer layer and the n-GaN layer, the strain compensation layer formed of AlGaN.
The semiconductor light emission device of claim 8, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor light emission device of claim 8, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar.
A semiconductor piezoelectric sensor compris ing: at least two support members partially disposed on a substrate; a first buffer layer configured to extend along surfaces of the at least two support members; a lower electrode layer diposed-e in direct contact with the first buffer layer; a second buffer layer disposed on the lower electrode layer; a gal li um ni tride (GaN) layer disposed on the second buffer layer; and an upper electrode layer disposed on the GaN layer, wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer. 11-21..
The semiconductor piezoelectric sensor of claim 10, further comprising: a strain compensation layer in terposed between the second buffer layer and the GaN layer, the stra in compensation layer formed of AlGaN.
The semiconductor piezoelectric sensor of claim 10, wherein the lower electrode layer is formed of molybdenum (Mo).
The semiconductor piezoelectric sensor of claim 10, wherein a surface of the first buffer layer contacting the at least two support members is substantially planar. *** END CLAIM LISTING
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canceled
canceled
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Layer stacks claimed or described, ordered top of device to substrate.
GaN film structure
Materials described outside the worked examples.
gallium nitride
GaN
first buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
Related documents with shared materials, methods, properties, or citations.
semiconductor light emission device
semiconductor piezoelectric sensor
second buffer layer
aluminum nitride
AlN
silicon nitride
SiNx
molybdenum
Mo
titanium
Ti
ruthenium
Ru
chrome nitride
CrN
tantalum nitride
TaN
n-type gallium nitride
n-GaN
p-type gallium nitride
p-GaN
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
semiconductor light emission device
semiconductor piezoelectric sensor
second buffer layer
aluminum nitride
AlN
silicon nitride
SiNx
molybdenum
Mo
titanium
Ti
ruthenium
Ru
chrome nitride
CrN
tantalum nitride
TaN
n-type gallium nitride
n-GaN
p-type gallium nitride
p-GaN
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
semiconductor light emission device
semiconductor piezoelectric sensor
second buffer layer
aluminum nitride
AlN
silicon nitride
SiNx
molybdenum
Mo
titanium
Ti
ruthenium
Ru
chrome nitride
CrN
tantalum nitride
TaN
n-type gallium nitride
n-GaN
p-type gallium nitride
p-GaN
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in
semiconductor light emission device
semiconductor piezoelectric sensor
second buffer layer
aluminum nitride
AlN
silicon nitride
SiNx
molybdenum
Mo
titanium
Ti
ruthenium
Ru
chrome nitride
CrN
tantalum nitride
TaN
n-type gallium nitride
n-GaN
p-type gallium nitride
p-GaN
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
FIG. 2 is a graph showing X-ray diffractometer (XRD) results of a first buffer layer, a electrode layer, and a second buffer layer grown on a glass substrate in …
FIG. 3 is a graph showing cathode luminescence (CL) characteristics of a GaN thin layer grown using the method shown in