Patent
US 9,224,909LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME
Jun-youn KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,224,909Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional diagram of a part of a light emitting device (e.g., the light emitting device illustrated in
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
FIG. 4 is a cross-sectional diagram of a light emitting device according to example embodiments; [0022]
FIG. 5 is a cross-sectional diagram of a light emitting device according to example embodiments; [0023]
FIG. 6 is a cross-sectional diagram of a light emitting device according to example embodiments; 4 Atty Dkt No.: 2557-00 1 398/US/DVA [0024]
FIG. 7 is a cross-sectional diagram of a light emitting device according to example embodiments; [0025]
FIG. 8 according to example embodiments. [0032] It should be noted that these Figures are intended to illustrate the general characteristics of methods, …
FIGS. 9A-9E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of FIG 1 B according to example embodiments; [0027]
FIGS. 10A-10 E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 200 of
FIGS. 11 A-11 D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 12A-12 C are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 400 of
FIGS. 13A-13D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 14A-14D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting device, the method comprising: forming a reflection buffer layer structure including forming a metal buffer layer and forming a dispersion Bragg reflection (DBR) layer on a silicon substrate, wherein the forming the metal buffer la y er includes using one of B and B2; and forming a GaN-based light emitting layer structure on the reflection buffer lav er structure.
The method of claim 1, wherein the forming of the reflection buffer layer structure includes: forming the metal buffer layer on the silicon substrate, forming the DBR layer on the metal buffer layer, and patterning the DBR layer to form a plurality of holes in the DBR layer.
The method of claim 1, wherein the forming of the metal buffer layer includes forming the metal buffer layer to have a single- layered structure including an XY material, X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of [[N,]] B, and B2.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal buffer layer thickness: about 1 nm to about 1 m | — | metal buffer layer (B or B₂) |
— | ≥ 2.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,224,909Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional diagram of a part of a light emitting device (e.g., the light emitting device illustrated in
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
FIG. 4 is a cross-sectional diagram of a light emitting device according to example embodiments; [0022]
FIG. 5 is a cross-sectional diagram of a light emitting device according to example embodiments; [0023]
FIG. 6 is a cross-sectional diagram of a light emitting device according to example embodiments; 4 Atty Dkt No.: 2557-00 1 398/US/DVA [0024]
FIG. 7 is a cross-sectional diagram of a light emitting device according to example embodiments; [0025]
FIG. 8 according to example embodiments. [0032] It should be noted that these Figures are intended to illustrate the general characteristics of methods, …
FIGS. 9A-9E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of FIG 1 B according to example embodiments; [0027]
FIGS. 10A-10 E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 200 of
FIGS. 11 A-11 D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 12A-12 C are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 400 of
FIGS. 13A-13D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 14A-14D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting device, the method comprising: forming a reflection buffer layer structure including forming a metal buffer layer and forming a dispersion Bragg reflection (DBR) layer on a silicon substrate, wherein the forming the metal buffer la y er includes using one of B and B2; and forming a GaN-based light emitting layer structure on the reflection buffer lav er structure.
The method of claim 1, wherein the forming of the reflection buffer layer structure includes: forming the metal buffer layer on the silicon substrate, forming the DBR layer on the metal buffer layer, and patterning the DBR layer to form a plurality of holes in the DBR layer.
The method of claim 1, wherein the forming of the metal buffer layer includes forming the metal buffer layer to have a single- layered structure including an XY material, X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of [[N,]] B, and B2.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal buffer layer thickness: about 1 nm to about 1 m | — | metal buffer layer (B or B₂) |
— | ≥ 2.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,224,909Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional diagram of a part of a light emitting device (e.g., the light emitting device illustrated in
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
FIG. 4 is a cross-sectional diagram of a light emitting device according to example embodiments; [0022]
FIG. 5 is a cross-sectional diagram of a light emitting device according to example embodiments; [0023]
FIG. 6 is a cross-sectional diagram of a light emitting device according to example embodiments; 4 Atty Dkt No.: 2557-00 1 398/US/DVA [0024]
FIG. 7 is a cross-sectional diagram of a light emitting device according to example embodiments; [0025]
FIG. 8 according to example embodiments. [0032] It should be noted that these Figures are intended to illustrate the general characteristics of methods, …
FIGS. 9A-9E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of FIG 1 B according to example embodiments; [0027]
FIGS. 10A-10 E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 200 of
FIGS. 11 A-11 D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 12A-12 C are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 400 of
FIGS. 13A-13D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 14A-14D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting device, the method comprising: forming a reflection buffer layer structure including forming a metal buffer layer and forming a dispersion Bragg reflection (DBR) layer on a silicon substrate, wherein the forming the metal buffer la y er includes using one of B and B2; and forming a GaN-based light emitting layer structure on the reflection buffer lav er structure.
The method of claim 1, wherein the forming of the reflection buffer layer structure includes: forming the metal buffer layer on the silicon substrate, forming the DBR layer on the metal buffer layer, and patterning the DBR layer to form a plurality of holes in the DBR layer.
The method of claim 1, wherein the forming of the metal buffer layer includes forming the metal buffer layer to have a single- layered structure including an XY material, X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of [[N,]] B, and B2.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal buffer layer thickness: about 1 nm to about 1 m | — | metal buffer layer (B or B₂) |
— | ≥ 2.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,224,909Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional diagram of a part of a light emitting device (e.g., the light emitting device illustrated in
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
FIG. 4 is a cross-sectional diagram of a light emitting device according to example embodiments; [0022]
FIG. 5 is a cross-sectional diagram of a light emitting device according to example embodiments; [0023]
FIG. 6 is a cross-sectional diagram of a light emitting device according to example embodiments; 4 Atty Dkt No.: 2557-00 1 398/US/DVA [0024]
FIG. 7 is a cross-sectional diagram of a light emitting device according to example embodiments; [0025]
FIG. 8 according to example embodiments. [0032] It should be noted that these Figures are intended to illustrate the general characteristics of methods, …
FIGS. 9A-9E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of FIG 1 B according to example embodiments; [0027]
FIGS. 10A-10 E are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 200 of
FIGS. 11 A-11 D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 12A-12 C are cross-sectional diagrams illustrating methods of manufacturing the light emitting device 400 of
FIGS. 13A-13D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
FIGS. 14A-14D are cross-sectional diagrams illustrating methods of manufacturing the light emitting device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting device, the method comprising: forming a reflection buffer layer structure including forming a metal buffer layer and forming a dispersion Bragg reflection (DBR) layer on a silicon substrate, wherein the forming the metal buffer la y er includes using one of B and B2; and forming a GaN-based light emitting layer structure on the reflection buffer lav er structure.
The method of claim 1, wherein the forming of the reflection buffer layer structure includes: forming the metal buffer layer on the silicon substrate, forming the DBR layer on the metal buffer layer, and patterning the DBR layer to form a plurality of holes in the DBR layer.
The method of claim 1, wherein the forming of the metal buffer layer includes forming the metal buffer layer to have a single- layered structure including an XY material, X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of [[N,]] B, and B2.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of Reflectance (%) as a function of Wavelength (nm) for DBR layers before and after thermal treatment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal buffer layer thickness: about 1 nm to about 1 m | — | metal buffer layer (B or B₂) |
— | ≥ 2.5 eV |
Related documents with shared materials, methods, properties, or citations.
metal buffer layer (B or B₂)
silicon carbide
SiC
silicon dioxide
SiO₂
aluminum nitride
AlN
gallium nitride
GaN
boron nitride
BN
boron phosphide
BP
AlInGaN
AlBGaN
XY metal material layer (X = Ti/Cr/Zr/Hf/Nb/Ta; Y = B/B₂)
nitride-based thin film layer (AlxGa₁-xInyN)
AlxGa₁-xInyN
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
| — |
metal buffer layer (B or B₂)
silicon carbide
SiC
silicon dioxide
SiO₂
aluminum nitride
AlN
gallium nitride
GaN
boron nitride
BN
boron phosphide
BP
AlInGaN
AlBGaN
XY metal material layer (X = Ti/Cr/Zr/Hf/Nb/Ta; Y = B/B₂)
nitride-based thin film layer (AlxGa₁-xInyN)
AlxGa₁-xInyN
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
| — |
metal buffer layer (B or B₂)
silicon carbide
SiC
silicon dioxide
SiO₂
aluminum nitride
AlN
gallium nitride
GaN
boron nitride
BN
boron phosphide
BP
AlInGaN
AlBGaN
XY metal material layer (X = Ti/Cr/Zr/Hf/Nb/Ta; Y = B/B₂)
nitride-based thin film layer (AlxGa₁-xInyN)
AlxGa₁-xInyN
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
| — |
metal buffer layer (B or B₂)
silicon carbide
SiC
silicon dioxide
SiO₂
aluminum nitride
AlN
gallium nitride
GaN
boron nitride
BN
boron phosphide
BP
AlInGaN
AlBGaN
XY metal material layer (X = Ti/Cr/Zr/Hf/Nb/Ta; Y = B/B₂)
nitride-based thin film layer (AlxGa₁-xInyN)
AlxGa₁-xInyN
FIG. 3 is a graph of Reflectance as a function of Incident Angle (°) for a reflection buffer layer structure of a comparative example and an example embodiment; …
| — |