GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PO-MIN TU

Patent

Atlas literature

Patent

US 8,461,666

GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PO-MIN TU

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 2 dependent

1
IndependentSifillercomposite substrate
What is claimed is: 1.. A composite substrate for a s em iconductor to grow ther e on com prising: a s i licon substrate comprising a f irst sur face an d a sec ond sur fae opposite to the ﬁrst surf ace, the ﬁrst surface de ﬁn ing a plurality of grooves therein, the second surface 5 bein g Conﬁghured for g rowth of the semiconductor ther eon; and a f iller ﬁlled into the p lurality of grooves on the ﬁ rst surface of the silicon s ub strat e, a thermal expansion c oeﬃcient of the ﬁl ler being bigg e r than that o f the silicon substrate,
1. 2
  Dependent← claim 1composite substrate
  The composite su bstrate as clai m ed in claim 1, wherein the pl u rality of g rooves are uni form ly arra nge d in the ﬁrst surf ace.
2. 15
  Dependent← claim 1AlOSiCAlNInNMgNZnOcomposite substrate
  5. The composite s u bst ra te as clai m ed in claim 1, wherein the ﬁller is selected f rom the group cons i sting o fAlO, SiC, AIN, I nN, MgN, ZnO, GaAs, Ga P and Ge.
10
Independentcomposite substrate
3. The c omposite su bstrate as claimed i n claim I, whe re in the plurality of grooves h a ve a same depth.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

composite substrate

fillerfiller in grooves on first surface

Sisilicon substrate with grooves on first surface

gallium nitride-based semiconductor device

GaNgallium nitride semiconductor layer on second surface

fillerfiller in grooves

Sisilicon substrate with grooves on first surface

Materials

Materials described outside the worked examples.

silicon substrate

Substrate

filler

Groove Filler With Higher Thermal Expansion Coefficient Than Silicon

Process steps

Additional fabrication and treatment steps described in the patent.

Filler Deposition

Step 1

Process details

methods:evaporation plating, sputtering, atomic layer deposition, metal organic chemical vapor deposition

Materials:filler

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | Matter42 Literature