Patent
US 9,240,317HIGH TEMPERATURE GaN BASED SUPER SEMICONDUCTOR AND FABRICATION PROCESS
Elbadawy Elsharawy
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,240,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
FIG. 2 is a representative side view of a super semiconductor according to the invention deposited on a substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A low temperature GaN based super semiconductor, comprising: a GaN supercell having equal percentages of Cu and at least one material from the family group consisting of P, As, or Sb, wherein the GaN supercell is doped in accordance with [[the]] a formula selected from the group consisting of Ga u2xCuxAsxN, GavCu xN and Gai CuSbx wherein x is from about 6.25% to about 25%.
The super semiconductor as claimed in claim 1, wherein: x is from about 15% to about 20%.
The super semiconductor as claimed in claim 1, wherein: x is 25%.
The super semiconductor as claimed in claim 1, wherein: canceled
A GaN supercell comprising a lattice of 8 GaN cells in a 2 x 2 x 2 arr angement with each cell having 4 Ga atoms and 4 N atoms.
The GaN supercell as claimed in claim 5, wherein: there are at least two Cu-As atom pairs in the supercell to allow an uninterrupted flow of electrons in the lattice. 2 A li ti N 14/226 883 D k t N 3391D 0026U SVG 14226883.07-28-2015.ICNEJEE₂PXXIFW3.CLM.2.1.384.271.2231.309.svg 0.127 6.157 Chemistry Black and white
The GaN supercell as claimed in claim 5, wherein: there are at least three Cu-As atom pairs in the supercell.
A process of fabricating a GaN super cell comprising the steps of: depositing GaN on a substrate; doping the GaN with one of phosphorous (P), arsenic (As) and antimony (Sb) in accordance with the formula GalxCuxAsx/PX/SbxN, wherein x is from about 6.25% to about 25%. withdrawn
The process claimed in claim 10, wherein: the GaN is doped with As/P/Sb. withdrawn
The process claimed in claim 10, wherein: the
Layer stacks claimed or described, ordered top of device to substrate.
low temperature GaN based super semiconductor
GaN supercell 2x2x2 lattice
Materials described outside the worked examples.
GaN
copper dopant
Cu
arsenic dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Graphene mobility (background reference only) | — | As |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
INGAN/GAN MULTIPLE QUANTUM WELL BLUE LIGHT DETECTOR COMBINED WITH EMBEDDED ELECTRODE AND PASSIVATION LAYER STRUCTURE AND PREPARATION METHOD AND APPLICATION THEREOF
Patent
Atlas literature
Patent
US 9,240,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
FIG. 2 is a representative side view of a super semiconductor according to the invention deposited on a substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A low temperature GaN based super semiconductor, comprising: a GaN supercell having equal percentages of Cu and at least one material from the family group consisting of P, As, or Sb, wherein the GaN supercell is doped in accordance with [[the]] a formula selected from the group consisting of Ga u2xCuxAsxN, GavCu xN and Gai CuSbx wherein x is from about 6.25% to about 25%.
The super semiconductor as claimed in claim 1, wherein: x is from about 15% to about 20%.
The super semiconductor as claimed in claim 1, wherein: x is 25%.
The super semiconductor as claimed in claim 1, wherein: canceled
A GaN supercell comprising a lattice of 8 GaN cells in a 2 x 2 x 2 arr angement with each cell having 4 Ga atoms and 4 N atoms.
The GaN supercell as claimed in claim 5, wherein: there are at least two Cu-As atom pairs in the supercell to allow an uninterrupted flow of electrons in the lattice. 2 A li ti N 14/226 883 D k t N 3391D 0026U SVG 14226883.07-28-2015.ICNEJEE₂PXXIFW3.CLM.2.1.384.271.2231.309.svg 0.127 6.157 Chemistry Black and white
The GaN supercell as claimed in claim 5, wherein: there are at least three Cu-As atom pairs in the supercell.
A process of fabricating a GaN super cell comprising the steps of: depositing GaN on a substrate; doping the GaN with one of phosphorous (P), arsenic (As) and antimony (Sb) in accordance with the formula GalxCuxAsx/PX/SbxN, wherein x is from about 6.25% to about 25%. withdrawn
The process claimed in claim 10, wherein: the GaN is doped with As/P/Sb. withdrawn
The process claimed in claim 10, wherein: the
Layer stacks claimed or described, ordered top of device to substrate.
low temperature GaN based super semiconductor
GaN supercell 2x2x2 lattice
Materials described outside the worked examples.
GaN
copper dopant
Cu
arsenic dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Graphene mobility (background reference only) | — | As |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
INGAN/GAN MULTIPLE QUANTUM WELL BLUE LIGHT DETECTOR COMBINED WITH EMBEDDED ELECTRODE AND PASSIVATION LAYER STRUCTURE AND PREPARATION METHOD AND APPLICATION THEREOF
Patent
Atlas literature
Patent
US 9,240,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
FIG. 2 is a representative side view of a super semiconductor according to the invention deposited on a substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A low temperature GaN based super semiconductor, comprising: a GaN supercell having equal percentages of Cu and at least one material from the family group consisting of P, As, or Sb, wherein the GaN supercell is doped in accordance with [[the]] a formula selected from the group consisting of Ga u2xCuxAsxN, GavCu xN and Gai CuSbx wherein x is from about 6.25% to about 25%.
The super semiconductor as claimed in claim 1, wherein: x is from about 15% to about 20%.
The super semiconductor as claimed in claim 1, wherein: x is 25%.
The super semiconductor as claimed in claim 1, wherein: canceled
A GaN supercell comprising a lattice of 8 GaN cells in a 2 x 2 x 2 arr angement with each cell having 4 Ga atoms and 4 N atoms.
The GaN supercell as claimed in claim 5, wherein: there are at least two Cu-As atom pairs in the supercell to allow an uninterrupted flow of electrons in the lattice. 2 A li ti N 14/226 883 D k t N 3391D 0026U SVG 14226883.07-28-2015.ICNEJEE₂PXXIFW3.CLM.2.1.384.271.2231.309.svg 0.127 6.157 Chemistry Black and white
The GaN supercell as claimed in claim 5, wherein: there are at least three Cu-As atom pairs in the supercell.
A process of fabricating a GaN super cell comprising the steps of: depositing GaN on a substrate; doping the GaN with one of phosphorous (P), arsenic (As) and antimony (Sb) in accordance with the formula GalxCuxAsx/PX/SbxN, wherein x is from about 6.25% to about 25%. withdrawn
The process claimed in claim 10, wherein: the GaN is doped with As/P/Sb. withdrawn
The process claimed in claim 10, wherein: the
Layer stacks claimed or described, ordered top of device to substrate.
low temperature GaN based super semiconductor
GaN supercell 2x2x2 lattice
Materials described outside the worked examples.
GaN
copper dopant
Cu
arsenic dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Graphene mobility (background reference only) | — | As |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
INGAN/GAN MULTIPLE QUANTUM WELL BLUE LIGHT DETECTOR COMBINED WITH EMBEDDED ELECTRODE AND PASSIVATION LAYER STRUCTURE AND PREPARATION METHOD AND APPLICATION THEREOF
Patent
Atlas literature
Patent
US 9,240,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
FIG. 2 is a representative side view of a super semiconductor according to the invention deposited on a substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A low temperature GaN based super semiconductor, comprising: a GaN supercell having equal percentages of Cu and at least one material from the family group consisting of P, As, or Sb, wherein the GaN supercell is doped in accordance with [[the]] a formula selected from the group consisting of Ga u2xCuxAsxN, GavCu xN and Gai CuSbx wherein x is from about 6.25% to about 25%.
The super semiconductor as claimed in claim 1, wherein: x is from about 15% to about 20%.
The super semiconductor as claimed in claim 1, wherein: x is 25%.
The super semiconductor as claimed in claim 1, wherein: canceled
A GaN supercell comprising a lattice of 8 GaN cells in a 2 x 2 x 2 arr angement with each cell having 4 Ga atoms and 4 N atoms.
The GaN supercell as claimed in claim 5, wherein: there are at least two Cu-As atom pairs in the supercell to allow an uninterrupted flow of electrons in the lattice. 2 A li ti N 14/226 883 D k t N 3391D 0026U SVG 14226883.07-28-2015.ICNEJEE₂PXXIFW3.CLM.2.1.384.271.2231.309.svg 0.127 6.157 Chemistry Black and white
The GaN supercell as claimed in claim 5, wherein: there are at least three Cu-As atom pairs in the supercell.
A process of fabricating a GaN super cell comprising the steps of: depositing GaN on a substrate; doping the GaN with one of phosphorous (P), arsenic (As) and antimony (Sb) in accordance with the formula GalxCuxAsx/PX/SbxN, wherein x is from about 6.25% to about 25%. withdrawn
The process claimed in claim 10, wherein: the GaN is doped with As/P/Sb. withdrawn
The process claimed in claim 10, wherein: the
Layer stacks claimed or described, ordered top of device to substrate.
low temperature GaN based super semiconductor
GaN supercell 2x2x2 lattice
Materials described outside the worked examples.
GaN
copper dopant
Cu
arsenic dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates the band structure of superconductors compared to other materials. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Graphene mobility (background reference only) | — | As |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
INGAN/GAN MULTIPLE QUANTUM WELL BLUE LIGHT DETECTOR COMBINED WITH EMBEDDED ELECTRODE AND PASSIVATION LAYER STRUCTURE AND PREPARATION METHOD AND APPLICATION THEREOF
phosphorous dopant
P
antimony dopant
Sb
Cu-As doped GaN supercell
Ga₁-2xCuxAsxN
copper(I) hexafluoroarsenate
CuAsF₆
copper(I) hexafluorophosphate
CuPF₆
copper(I) hexafluoroantimonate
CuSbF₆
silicon substrate
Si
silicon carbide substrate
SiC
phosphorous dopant
P
antimony dopant
Sb
Cu-As doped GaN supercell
Ga₁-2xCuxAsxN
copper(I) hexafluoroarsenate
CuAsF₆
copper(I) hexafluorophosphate
CuPF₆
copper(I) hexafluoroantimonate
CuSbF₆
silicon substrate
Si
silicon carbide substrate
SiC
phosphorous dopant
P
antimony dopant
Sb
Cu-As doped GaN supercell
Ga₁-2xCuxAsxN
copper(I) hexafluoroarsenate
CuAsF₆
copper(I) hexafluorophosphate
CuPF₆
copper(I) hexafluoroantimonate
CuSbF₆
silicon substrate
Si
silicon carbide substrate
SiC
phosphorous dopant
P
antimony dopant
Sb
Cu-As doped GaN supercell
Ga₁-2xCuxAsxN
copper(I) hexafluoroarsenate
CuAsF₆
copper(I) hexafluorophosphate
CuPF₆
copper(I) hexafluoroantimonate
CuSbF₆
silicon substrate
Si
silicon carbide substrate
SiC