Patent
US 9,391,144SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON
Can Bayram
US
Copyright © 2026 Matter42. All rights reserved.
Patent
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US 9,391,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating a(100) silicon substrate that can be employed in one embodiment of the …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the silicon substrate illustrated in
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 5 after forming a gallium nitride material on a portion of the contiguous A lN buffer layer and su rr ounding each sidewall of each patterned dielectric …
FIG. 6 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
FIG. 8 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 9 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 13 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 14 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 15 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 16 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 17 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 18 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 19 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 20 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 21 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 22 is a pictorial representation (through a cross sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. (O rigina l) The semiconductor structure of Claim 1, further comprising an A I N buffer layer located bet wee n said portion of said epitaxial semiconductor material and said gallium nitride SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.3.437.549.609.585.svg 0.12 0.573 Chemistry Black and white
(Oritginal) The se micondu cto r str ucture of Claim 1, further comprising a diele ctric spacer located be tween said portion of said e pitaxi a l semiconductor material and said gallium nitride ma te rial.
(SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.7.523.1243.712.1291.svg 0.16 0.63 Chemistry Black and white Amende d) The se micon ductor str u cture of C laim [[1]] 3 wher ei n a portion o f said di e lectric s pacer is in contact with an AIN buffer layer pres ent i n ea ch opening. s aid buffer layer is located between the surface of the silicon substrate ha v ing the (111) crystal plane an d the gall iu m nitride riaterial.
T he se miconductor struc ture of Claim 1, further comprising a gap located between said portion o f said ep it axial semiconductor material and said galli um nitride material.
tOr iginal) The semiconducto r structure of Claim 1, wherein said (100) silicon substrate comprises a bulk se m iconductor m aterial.
(Ori g inal) The semiconductor s tr ucture of C laim 1. wherein said (100) silicon substrate comprises a topmost la y er of a silicon-on-i nsu lator substrate. 3 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.18.1497.3101.2188.3128.svg 0.09 2.303 Chemistry Black and white doc
8. The semiconductor structure of Claim 1, wherein said gallium nitride material is selected from GaN, GaAIN, SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.2.1090.434.1221.472.svg 0.127 0.437 Chemistry Black and white and GaAllnN,
(Origina l) The semiconductor structure of Claim 1, wh erein said g allium nitride material is sin gle crystal and is o f a single phase, wherein said si ngl e phase is a wurtzite phase. 10(1. The s emiconductor structure of Claim 1, wher e in each opening of said plural it y of openings has a n upper portion h aving a width that is lar ge r than a width of a lower portion. 1 L (Origi nal T he s emiconductor str uctu re o f Clai m 1, wher ein a por t ion of said gallium nitride material within eact ope ning ext ends ab ove a sur face of the (100) silic on substrate having a non-(1 1 1) crystal plane.
(Ori ginal) The semicon ductor structure of Claim 1, wherein said gallium n itride material consists e ssential ly of G aN,
(Original) T he semiconductor struc tu re o f Claim 1. wherein said epitaxial semic ond uctor material comprises silicon. 14, (Ori n inal) Th e se m ico ndu ctor struc ture of Clai m 1, wherein said epitaxial sem icon ductor material comprises a s emiconductor material other than silicon. 4 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.18.1497.3100.2174.3129.svg 0.097 2.257 Chemistry Black and white Idiioc
15. (Ori SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.616.316.728.363.svg 0.157 0.373 Chemistry Black and white The semicondueto r structure of Claimn 1, w SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.1606.315.1823.352.svg 0.123 0.723 Chemistry Black and white at least one semico nductor device located upon and within said gallium nitride material and said at least one other semic ondu ctor device located upon and within said epit a xial se m icon du ctor mate rial each comprise a f ield effect transistor. SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.10.1502.3096.2251.3125.svg 0.097 2.497 Chemistry Black and white
(Currently A me nded) Th e semiconductor st ructure of SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.5.1618.894.1741.939.svg 0.15 0.41 Chemistry Black and white 1. further comprising a n interconnect located abo ve said at least one semiconductor device locate d upon and within said gallium nitride material an d at least one other semiconductor device located upon and w ithin said epitaxial se m icond uc tor material.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with GaN on (100) Si
field effect transistor on GaN and epitaxial semiconductor
Materials described outside the worked examples.
epitaxial semiconductor material
gallium nitride material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50000–20000000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,391,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating a(100) silicon substrate that can be employed in one embodiment of the …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the silicon substrate illustrated in
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 5 after forming a gallium nitride material on a portion of the contiguous A lN buffer layer and su rr ounding each sidewall of each patterned dielectric …
FIG. 6 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
FIG. 8 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 9 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 13 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 14 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 15 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 16 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 17 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 18 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 19 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 20 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 21 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 22 is a pictorial representation (through a cross sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. (O rigina l) The semiconductor structure of Claim 1, further comprising an A I N buffer layer located bet wee n said portion of said epitaxial semiconductor material and said gallium nitride SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.3.437.549.609.585.svg 0.12 0.573 Chemistry Black and white
(Oritginal) The se micondu cto r str ucture of Claim 1, further comprising a diele ctric spacer located be tween said portion of said e pitaxi a l semiconductor material and said gallium nitride ma te rial.
(SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.7.523.1243.712.1291.svg 0.16 0.63 Chemistry Black and white Amende d) The se micon ductor str u cture of C laim [[1]] 3 wher ei n a portion o f said di e lectric s pacer is in contact with an AIN buffer layer pres ent i n ea ch opening. s aid buffer layer is located between the surface of the silicon substrate ha v ing the (111) crystal plane an d the gall iu m nitride riaterial.
T he se miconductor struc ture of Claim 1, further comprising a gap located between said portion o f said ep it axial semiconductor material and said galli um nitride material.
tOr iginal) The semiconducto r structure of Claim 1, wherein said (100) silicon substrate comprises a bulk se m iconductor m aterial.
(Ori g inal) The semiconductor s tr ucture of C laim 1. wherein said (100) silicon substrate comprises a topmost la y er of a silicon-on-i nsu lator substrate. 3 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.18.1497.3101.2188.3128.svg 0.09 2.303 Chemistry Black and white doc
8. The semiconductor structure of Claim 1, wherein said gallium nitride material is selected from GaN, GaAIN, SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.2.1090.434.1221.472.svg 0.127 0.437 Chemistry Black and white and GaAllnN,
(Origina l) The semiconductor structure of Claim 1, wh erein said g allium nitride material is sin gle crystal and is o f a single phase, wherein said si ngl e phase is a wurtzite phase. 10(1. The s emiconductor structure of Claim 1, wher e in each opening of said plural it y of openings has a n upper portion h aving a width that is lar ge r than a width of a lower portion. 1 L (Origi nal T he s emiconductor str uctu re o f Clai m 1, wher ein a por t ion of said gallium nitride material within eact ope ning ext ends ab ove a sur face of the (100) silic on substrate having a non-(1 1 1) crystal plane.
(Ori ginal) The semicon ductor structure of Claim 1, wherein said gallium n itride material consists e ssential ly of G aN,
(Original) T he semiconductor struc tu re o f Claim 1. wherein said epitaxial semic ond uctor material comprises silicon. 14, (Ori n inal) Th e se m ico ndu ctor struc ture of Clai m 1, wherein said epitaxial sem icon ductor material comprises a s emiconductor material other than silicon. 4 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.18.1497.3100.2174.3129.svg 0.097 2.257 Chemistry Black and white Idiioc
15. (Ori SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.616.316.728.363.svg 0.157 0.373 Chemistry Black and white The semicondueto r structure of Claimn 1, w SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.1606.315.1823.352.svg 0.123 0.723 Chemistry Black and white at least one semico nductor device located upon and within said gallium nitride material and said at least one other semic ondu ctor device located upon and within said epit a xial se m icon du ctor mate rial each comprise a f ield effect transistor. SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.10.1502.3096.2251.3125.svg 0.097 2.497 Chemistry Black and white
(Currently A me nded) Th e semiconductor st ructure of SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.5.1618.894.1741.939.svg 0.15 0.41 Chemistry Black and white 1. further comprising a n interconnect located abo ve said at least one semiconductor device locate d upon and within said gallium nitride material an d at least one other semiconductor device located upon and w ithin said epitaxial se m icond uc tor material.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with GaN on (100) Si
field effect transistor on GaN and epitaxial semiconductor
Materials described outside the worked examples.
epitaxial semiconductor material
gallium nitride material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50000–20000000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,391,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating a(100) silicon substrate that can be employed in one embodiment of the …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the silicon substrate illustrated in
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 5 after forming a gallium nitride material on a portion of the contiguous A lN buffer layer and su rr ounding each sidewall of each patterned dielectric …
FIG. 6 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
FIG. 8 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 9 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 13 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 14 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 15 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 16 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 17 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 18 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 19 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 20 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 21 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 22 is a pictorial representation (through a cross sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. (O rigina l) The semiconductor structure of Claim 1, further comprising an A I N buffer layer located bet wee n said portion of said epitaxial semiconductor material and said gallium nitride SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.3.437.549.609.585.svg 0.12 0.573 Chemistry Black and white
(Oritginal) The se micondu cto r str ucture of Claim 1, further comprising a diele ctric spacer located be tween said portion of said e pitaxi a l semiconductor material and said gallium nitride ma te rial.
(SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.7.523.1243.712.1291.svg 0.16 0.63 Chemistry Black and white Amende d) The se micon ductor str u cture of C laim [[1]] 3 wher ei n a portion o f said di e lectric s pacer is in contact with an AIN buffer layer pres ent i n ea ch opening. s aid buffer layer is located between the surface of the silicon substrate ha v ing the (111) crystal plane an d the gall iu m nitride riaterial.
T he se miconductor struc ture of Claim 1, further comprising a gap located between said portion o f said ep it axial semiconductor material and said galli um nitride material.
tOr iginal) The semiconducto r structure of Claim 1, wherein said (100) silicon substrate comprises a bulk se m iconductor m aterial.
(Ori g inal) The semiconductor s tr ucture of C laim 1. wherein said (100) silicon substrate comprises a topmost la y er of a silicon-on-i nsu lator substrate. 3 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.18.1497.3101.2188.3128.svg 0.09 2.303 Chemistry Black and white doc
8. The semiconductor structure of Claim 1, wherein said gallium nitride material is selected from GaN, GaAIN, SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.2.1090.434.1221.472.svg 0.127 0.437 Chemistry Black and white and GaAllnN,
(Origina l) The semiconductor structure of Claim 1, wh erein said g allium nitride material is sin gle crystal and is o f a single phase, wherein said si ngl e phase is a wurtzite phase. 10(1. The s emiconductor structure of Claim 1, wher e in each opening of said plural it y of openings has a n upper portion h aving a width that is lar ge r than a width of a lower portion. 1 L (Origi nal T he s emiconductor str uctu re o f Clai m 1, wher ein a por t ion of said gallium nitride material within eact ope ning ext ends ab ove a sur face of the (100) silic on substrate having a non-(1 1 1) crystal plane.
(Ori ginal) The semicon ductor structure of Claim 1, wherein said gallium n itride material consists e ssential ly of G aN,
(Original) T he semiconductor struc tu re o f Claim 1. wherein said epitaxial semic ond uctor material comprises silicon. 14, (Ori n inal) Th e se m ico ndu ctor struc ture of Clai m 1, wherein said epitaxial sem icon ductor material comprises a s emiconductor material other than silicon. 4 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.18.1497.3100.2174.3129.svg 0.097 2.257 Chemistry Black and white Idiioc
15. (Ori SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.616.316.728.363.svg 0.157 0.373 Chemistry Black and white The semicondueto r structure of Claimn 1, w SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.1606.315.1823.352.svg 0.123 0.723 Chemistry Black and white at least one semico nductor device located upon and within said gallium nitride material and said at least one other semic ondu ctor device located upon and within said epit a xial se m icon du ctor mate rial each comprise a f ield effect transistor. SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.10.1502.3096.2251.3125.svg 0.097 2.497 Chemistry Black and white
(Currently A me nded) Th e semiconductor st ructure of SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.5.1618.894.1741.939.svg 0.15 0.41 Chemistry Black and white 1. further comprising a n interconnect located abo ve said at least one semiconductor device locate d upon and within said gallium nitride material an d at least one other semiconductor device located upon and w ithin said epitaxial se m icond uc tor material.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with GaN on (100) Si
field effect transistor on GaN and epitaxial semiconductor
Materials described outside the worked examples.
epitaxial semiconductor material
gallium nitride material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50000–20000000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,391,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating a(100) silicon substrate that can be employed in one embodiment of the …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the silicon substrate illustrated in
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 5 after forming a gallium nitride material on a portion of the contiguous A lN buffer layer and su rr ounding each sidewall of each patterned dielectric …
FIG. 6 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
FIG. 8 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 9 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 13 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 14 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 15 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 16 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 17 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 18 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 19 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 20 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 21 is a pictorial representation (through a cross sectional view) illustrating the structure of
FIG. 22 is a pictorial representation (through a cross sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. (O rigina l) The semiconductor structure of Claim 1, further comprising an A I N buffer layer located bet wee n said portion of said epitaxial semiconductor material and said gallium nitride SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.3.437.549.609.585.svg 0.12 0.573 Chemistry Black and white
(Oritginal) The se micondu cto r str ucture of Claim 1, further comprising a diele ctric spacer located be tween said portion of said e pitaxi a l semiconductor material and said gallium nitride ma te rial.
(SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.7.523.1243.712.1291.svg 0.16 0.63 Chemistry Black and white Amende d) The se micon ductor str u cture of C laim [[1]] 3 wher ei n a portion o f said di e lectric s pacer is in contact with an AIN buffer layer pres ent i n ea ch opening. s aid buffer layer is located between the surface of the silicon substrate ha v ing the (111) crystal plane an d the gall iu m nitride riaterial.
T he se miconductor struc ture of Claim 1, further comprising a gap located between said portion o f said ep it axial semiconductor material and said galli um nitride material.
tOr iginal) The semiconducto r structure of Claim 1, wherein said (100) silicon substrate comprises a bulk se m iconductor m aterial.
(Ori g inal) The semiconductor s tr ucture of C laim 1. wherein said (100) silicon substrate comprises a topmost la y er of a silicon-on-i nsu lator substrate. 3 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.2.18.1497.3101.2188.3128.svg 0.09 2.303 Chemistry Black and white doc
8. The semiconductor structure of Claim 1, wherein said gallium nitride material is selected from GaN, GaAIN, SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.2.1090.434.1221.472.svg 0.127 0.437 Chemistry Black and white and GaAllnN,
(Origina l) The semiconductor structure of Claim 1, wh erein said g allium nitride material is sin gle crystal and is o f a single phase, wherein said si ngl e phase is a wurtzite phase. 10(1. The s emiconductor structure of Claim 1, wher e in each opening of said plural it y of openings has a n upper portion h aving a width that is lar ge r than a width of a lower portion. 1 L (Origi nal T he s emiconductor str uctu re o f Clai m 1, wher ein a por t ion of said gallium nitride material within eact ope ning ext ends ab ove a sur face of the (100) silic on substrate having a non-(1 1 1) crystal plane.
(Ori ginal) The semicon ductor structure of Claim 1, wherein said gallium n itride material consists e ssential ly of G aN,
(Original) T he semiconductor struc tu re o f Claim 1. wherein said epitaxial semic ond uctor material comprises silicon. 14, (Ori n inal) Th e se m ico ndu ctor struc ture of Clai m 1, wherein said epitaxial sem icon ductor material comprises a s emiconductor material other than silicon. 4 SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.3.18.1497.3100.2174.3129.svg 0.097 2.257 Chemistry Black and white Idiioc
15. (Ori SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.616.316.728.363.svg 0.157 0.373 Chemistry Black and white The semicondueto r structure of Claimn 1, w SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.1.1606.315.1823.352.svg 0.123 0.723 Chemistry Black and white at least one semico nductor device located upon and within said gallium nitride material and said at least one other semic ondu ctor device located upon and within said epit a xial se m icon du ctor mate rial each comprise a f ield effect transistor. SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.10.1502.3096.2251.3125.svg 0.097 2.497 Chemistry Black and white
(Currently A me nded) Th e semiconductor st ructure of SVG 14725581.02-24-2016.IL₁EGGENRXEAPX3.CLM.4.5.1618.894.1741.939.svg 0.15 0.41 Chemistry Black and white 1. further comprising a n interconnect located abo ve said at least one semiconductor device locate d upon and within said gallium nitride material an d at least one other semiconductor device located upon and w ithin said epitaxial se m icond uc tor material.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with GaN on (100) Si
field effect transistor on GaN and epitaxial semiconductor
Materials described outside the worked examples.
epitaxial semiconductor material
gallium nitride material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7A, 7B and 7C are scanning electron micrographs (SEMs) of a structure including GaN integrated on a(100) silicon substrate that is formed using the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50000–20000000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
AlN buffer layer
AlN
dielectric spacer
(100) silicon substrate
Si
GaN
GaAlN
GaAlInN
dielectric material
| — |
Temperature | 600–900 °C | — |
Duration | 5–20 minutes | — |
Duration | 5–120 seconds | — |
Temperature | 650–850 °C | — |
Temperature | 850–1050 °C | — |
Duration | 1–20 minutes | — |
Thickness | 10–250 nm | — |
Thickness | 60–80 nm | — |
Duration | 60–7200 s | — |
Thickness | 100–5000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 2000–4000 nm | — |
Thickness | 2–5 nm | — |
Pressure | ≤ 10 bar | — |
Pressure | ≤ 1 bar | — |
AlN buffer layer
AlN
dielectric spacer
(100) silicon substrate
Si
GaN
GaAlN
GaAlInN
dielectric material
| — |
Temperature | 600–900 °C | — |
Duration | 5–20 minutes | — |
Duration | 5–120 seconds | — |
Temperature | 650–850 °C | — |
Temperature | 850–1050 °C | — |
Duration | 1–20 minutes | — |
Thickness | 10–250 nm | — |
Thickness | 60–80 nm | — |
Duration | 60–7200 s | — |
Thickness | 100–5000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 2000–4000 nm | — |
Thickness | 2–5 nm | — |
Pressure | ≤ 10 bar | — |
Pressure | ≤ 1 bar | — |
AlN buffer layer
AlN
dielectric spacer
(100) silicon substrate
Si
GaN
GaAlN
GaAlInN
dielectric material
| — |
Temperature | 600–900 °C | — |
Duration | 5–20 minutes | — |
Duration | 5–120 seconds | — |
Temperature | 650–850 °C | — |
Temperature | 850–1050 °C | — |
Duration | 1–20 minutes | — |
Thickness | 10–250 nm | — |
Thickness | 60–80 nm | — |
Duration | 60–7200 s | — |
Thickness | 100–5000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 2000–4000 nm | — |
Thickness | 2–5 nm | — |
Pressure | ≤ 10 bar | — |
Pressure | ≤ 1 bar | — |
AlN buffer layer
AlN
dielectric spacer
(100) silicon substrate
Si
GaN
GaAlN
GaAlInN
dielectric material
| — |
Temperature | 600–900 °C | — |
Duration | 5–20 minutes | — |
Duration | 5–120 seconds | — |
Temperature | 650–850 °C | — |
Temperature | 850–1050 °C | — |
Duration | 1–20 minutes | — |
Thickness | 10–250 nm | — |
Thickness | 60–80 nm | — |
Duration | 60–7200 s | — |
Thickness | 100–5000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 2000–4000 nm | — |
Thickness | 2–5 nm | — |
Pressure | ≤ 10 bar | — |
Pressure | ≤ 1 bar | — |