Patent
US 8,263,424OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
Tadao Hashimoto, Hitoshi Sato, Shuji Nakamura
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,263,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1(a) and 1(b) are schematics of crystallographic directions and planes of 25 interest in hexagonal GaN;
FIG. 2 is a schematic of an autoclave according to an embodiment of the present invention;
FIG. 3 illustrates a process flow diagram;
FIG. 4 illustrates an example of a LED using a high-doped Mg layer on a N-polar (N- 30 face) substrate;
FIG. 5 illustrates a HEMT utilizing N-polar (N-face) smooth surface of GaN grown by the ammonothermal method;
FIGS. 6(a) and 6(b) illustrate GaN crystals grown in a first method in accordance with the present invention; 5
FIGS. 7(a) and 7(b) illustrate GaN crystals grown in a second method in accordance with the present invention;
FIG. 8 illustrates a 1 micron-thick GaN layer with a smooth surface grown on the GaN crystals of
FIG. 9 illustrates a process chart outlining the steps used to perform the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly growing a non-Ga-polar surface of gallium nitride (GaN), comprising: placing a seed crystal of GaN having an exposed non-Ga-polar surface of GaN into an autoclave; placing a mineralizer into the autoclave; placing a source into the autoclave; adding ammonia to the autoclave; heating the autoclave; and ammonothermally growing the GaN in the heated autoclave, using the mineralizer, source and ammonia, wherein the exposed non-Ga-polar surface of the GaN is smoother than a Ga-polar surface of the GaN.
The method of claim 1, wherein the mineralizer is selected from a group comprising NaNH2, KNH 2, LiNH2, NH₄C l, NH₄ B r, and N H₄I.
The method of claim 1, wherein the source comprises polycrystalline GaN.
The method of claim 1, wherein the autoclave is heated in zones.
The method of claim 1, wherein the source comprises Ga metal.
A method of fabricating a gallium nitride (GaN) substrate, comprising: ammonothermally growing a GaN substrate resulting in an exposed N-polar (N-face) or M-plane surface that is smoother than a Ga-polar (Ga-face) surface of the GaN substrate.
The method of claim 15, wherein the N-polar (N-face) or M-plane surface is smooth enough for growth of device layers.
A method of fabricating an opto-electronic device comprising: fabricating a GaN substrate from a GaN bulk crystal grown ammonothermally on a GaN seed, wherein a growth surface of the GaN bulk crystal is not a Ga-polar surface and the growth surface as grown is smoother than a Ga-polar surface; and growing one or more group III nitride layers on the growth surface of the GaN substrate.
The method of claim 19, wherein the growing step comprises: growing a plurality of n-type group III nitride layers on the growth surface; growing at least one group III nitride light-emitting active layer on the plurality of n-type group III nitride layers; and growing at least one p-type group III nitride layer having an Mg doping on the active layers.
The method of claim 19, wherein the growth surface is an M-plane {10-10 } surface.
The method of claim 19, wherein the growth surface is an A-plane {11- 20} surface.
The method of claim 19, wherein the growth surface is a {1 0 -11} surface.
The method of claim 19, wherein the growth surface is a {1 0 -1-1} surface.
The method of claim 19, wherein the growth surface is a {11-22} surface.
The method of claim 19, wherein the growth surface is a {11-2-2} surface.
The method of claim 19, wherein the growth surface is a {20-2 1 } surface.
A method for fabricating a GaN layer, comprising: utilizing an N-polar surface or an M-plane surface of the GaN layer as a growth surface, wherein the N-polar surface or the M-plane surface is prepared and directly exposed using an ammonothermal growth technique and the N-polar surface or the M-plane surface is smoother than a Ga-polar surface of the GaN layer.
The method of claim 29, further comprising growing one or more group-I II nitride layers to the N-polar or M-plane surface of the GaN layer.
A method for growing a group-I II nitride layer, comprising: ammonothermally growing a group-I II nitride layer on a substrate, wherein the group-I II nitride layer comprises an N-face of a C-plane (000-1) or a M-plane {1 0-10 } that is directly exposed as a result of the growth of the group-I II nitride layer and the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is smoother than a Ga-face of the C-plane (0001).
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is substantially co-planar with a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is tilted with respect to a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted at an angle less than 10 degrees with respect to the surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } directly accepts growth of at least one additional group-I II nitride layer.
A method for fabricating a GaN substrate, comprising: directly growing a GaN substrate with an exposed N-face or M-plane surface that is of device quality using an ammonothermal growth method, wherein the exposed N-face or M-plane surface is smoother than a Ga-polar surface of the GaN substrate.
The method of claim 36, further comprising growing a group-I II nitride layer on the substrate, wherein the group III nitride layer comprises an N-face of a C-plane (000- 1) or M-plane {10-10} that is directly exposed as a result of the growth of the group-I II nitride layer.
The method of claim 36, wherein the N-face or M-plane is substantially co-planar with the plane of the substrate, rather than substantially perpendicular.
The method of claim 36, wherein the N-face or M- plane is slightl y misaligned with the plane of the substrate.
The method of claim 36, wherein the group-I II nitride layer directly accepts growth of at least one additional group-I II nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (LED/LD) on non-Ga-polar GaN substrate
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2.5–2.6 µm | — |
Pressure | ≤ 760 Torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,263,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1(a) and 1(b) are schematics of crystallographic directions and planes of 25 interest in hexagonal GaN;
FIG. 2 is a schematic of an autoclave according to an embodiment of the present invention;
FIG. 3 illustrates a process flow diagram;
FIG. 4 illustrates an example of a LED using a high-doped Mg layer on a N-polar (N- 30 face) substrate;
FIG. 5 illustrates a HEMT utilizing N-polar (N-face) smooth surface of GaN grown by the ammonothermal method;
FIGS. 6(a) and 6(b) illustrate GaN crystals grown in a first method in accordance with the present invention; 5
FIGS. 7(a) and 7(b) illustrate GaN crystals grown in a second method in accordance with the present invention;
FIG. 8 illustrates a 1 micron-thick GaN layer with a smooth surface grown on the GaN crystals of
FIG. 9 illustrates a process chart outlining the steps used to perform the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly growing a non-Ga-polar surface of gallium nitride (GaN), comprising: placing a seed crystal of GaN having an exposed non-Ga-polar surface of GaN into an autoclave; placing a mineralizer into the autoclave; placing a source into the autoclave; adding ammonia to the autoclave; heating the autoclave; and ammonothermally growing the GaN in the heated autoclave, using the mineralizer, source and ammonia, wherein the exposed non-Ga-polar surface of the GaN is smoother than a Ga-polar surface of the GaN.
The method of claim 1, wherein the mineralizer is selected from a group comprising NaNH2, KNH 2, LiNH2, NH₄C l, NH₄ B r, and N H₄I.
The method of claim 1, wherein the source comprises polycrystalline GaN.
The method of claim 1, wherein the autoclave is heated in zones.
The method of claim 1, wherein the source comprises Ga metal.
A method of fabricating a gallium nitride (GaN) substrate, comprising: ammonothermally growing a GaN substrate resulting in an exposed N-polar (N-face) or M-plane surface that is smoother than a Ga-polar (Ga-face) surface of the GaN substrate.
The method of claim 15, wherein the N-polar (N-face) or M-plane surface is smooth enough for growth of device layers.
A method of fabricating an opto-electronic device comprising: fabricating a GaN substrate from a GaN bulk crystal grown ammonothermally on a GaN seed, wherein a growth surface of the GaN bulk crystal is not a Ga-polar surface and the growth surface as grown is smoother than a Ga-polar surface; and growing one or more group III nitride layers on the growth surface of the GaN substrate.
The method of claim 19, wherein the growing step comprises: growing a plurality of n-type group III nitride layers on the growth surface; growing at least one group III nitride light-emitting active layer on the plurality of n-type group III nitride layers; and growing at least one p-type group III nitride layer having an Mg doping on the active layers.
The method of claim 19, wherein the growth surface is an M-plane {10-10 } surface.
The method of claim 19, wherein the growth surface is an A-plane {11- 20} surface.
The method of claim 19, wherein the growth surface is a {1 0 -11} surface.
The method of claim 19, wherein the growth surface is a {1 0 -1-1} surface.
The method of claim 19, wherein the growth surface is a {11-22} surface.
The method of claim 19, wherein the growth surface is a {11-2-2} surface.
The method of claim 19, wherein the growth surface is a {20-2 1 } surface.
A method for fabricating a GaN layer, comprising: utilizing an N-polar surface or an M-plane surface of the GaN layer as a growth surface, wherein the N-polar surface or the M-plane surface is prepared and directly exposed using an ammonothermal growth technique and the N-polar surface or the M-plane surface is smoother than a Ga-polar surface of the GaN layer.
The method of claim 29, further comprising growing one or more group-I II nitride layers to the N-polar or M-plane surface of the GaN layer.
A method for growing a group-I II nitride layer, comprising: ammonothermally growing a group-I II nitride layer on a substrate, wherein the group-I II nitride layer comprises an N-face of a C-plane (000-1) or a M-plane {1 0-10 } that is directly exposed as a result of the growth of the group-I II nitride layer and the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is smoother than a Ga-face of the C-plane (0001).
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is substantially co-planar with a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is tilted with respect to a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted at an angle less than 10 degrees with respect to the surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } directly accepts growth of at least one additional group-I II nitride layer.
A method for fabricating a GaN substrate, comprising: directly growing a GaN substrate with an exposed N-face or M-plane surface that is of device quality using an ammonothermal growth method, wherein the exposed N-face or M-plane surface is smoother than a Ga-polar surface of the GaN substrate.
The method of claim 36, further comprising growing a group-I II nitride layer on the substrate, wherein the group III nitride layer comprises an N-face of a C-plane (000- 1) or M-plane {10-10} that is directly exposed as a result of the growth of the group-I II nitride layer.
The method of claim 36, wherein the N-face or M-plane is substantially co-planar with the plane of the substrate, rather than substantially perpendicular.
The method of claim 36, wherein the N-face or M- plane is slightl y misaligned with the plane of the substrate.
The method of claim 36, wherein the group-I II nitride layer directly accepts growth of at least one additional group-I II nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (LED/LD) on non-Ga-polar GaN substrate
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2.5–2.6 µm | — |
Pressure | ≤ 760 Torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,263,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1(a) and 1(b) are schematics of crystallographic directions and planes of 25 interest in hexagonal GaN;
FIG. 2 is a schematic of an autoclave according to an embodiment of the present invention;
FIG. 3 illustrates a process flow diagram;
FIG. 4 illustrates an example of a LED using a high-doped Mg layer on a N-polar (N- 30 face) substrate;
FIG. 5 illustrates a HEMT utilizing N-polar (N-face) smooth surface of GaN grown by the ammonothermal method;
FIGS. 6(a) and 6(b) illustrate GaN crystals grown in a first method in accordance with the present invention; 5
FIGS. 7(a) and 7(b) illustrate GaN crystals grown in a second method in accordance with the present invention;
FIG. 8 illustrates a 1 micron-thick GaN layer with a smooth surface grown on the GaN crystals of
FIG. 9 illustrates a process chart outlining the steps used to perform the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly growing a non-Ga-polar surface of gallium nitride (GaN), comprising: placing a seed crystal of GaN having an exposed non-Ga-polar surface of GaN into an autoclave; placing a mineralizer into the autoclave; placing a source into the autoclave; adding ammonia to the autoclave; heating the autoclave; and ammonothermally growing the GaN in the heated autoclave, using the mineralizer, source and ammonia, wherein the exposed non-Ga-polar surface of the GaN is smoother than a Ga-polar surface of the GaN.
The method of claim 1, wherein the mineralizer is selected from a group comprising NaNH2, KNH 2, LiNH2, NH₄C l, NH₄ B r, and N H₄I.
The method of claim 1, wherein the source comprises polycrystalline GaN.
The method of claim 1, wherein the autoclave is heated in zones.
The method of claim 1, wherein the source comprises Ga metal.
A method of fabricating a gallium nitride (GaN) substrate, comprising: ammonothermally growing a GaN substrate resulting in an exposed N-polar (N-face) or M-plane surface that is smoother than a Ga-polar (Ga-face) surface of the GaN substrate.
The method of claim 15, wherein the N-polar (N-face) or M-plane surface is smooth enough for growth of device layers.
A method of fabricating an opto-electronic device comprising: fabricating a GaN substrate from a GaN bulk crystal grown ammonothermally on a GaN seed, wherein a growth surface of the GaN bulk crystal is not a Ga-polar surface and the growth surface as grown is smoother than a Ga-polar surface; and growing one or more group III nitride layers on the growth surface of the GaN substrate.
The method of claim 19, wherein the growing step comprises: growing a plurality of n-type group III nitride layers on the growth surface; growing at least one group III nitride light-emitting active layer on the plurality of n-type group III nitride layers; and growing at least one p-type group III nitride layer having an Mg doping on the active layers.
The method of claim 19, wherein the growth surface is an M-plane {10-10 } surface.
The method of claim 19, wherein the growth surface is an A-plane {11- 20} surface.
The method of claim 19, wherein the growth surface is a {1 0 -11} surface.
The method of claim 19, wherein the growth surface is a {1 0 -1-1} surface.
The method of claim 19, wherein the growth surface is a {11-22} surface.
The method of claim 19, wherein the growth surface is a {11-2-2} surface.
The method of claim 19, wherein the growth surface is a {20-2 1 } surface.
A method for fabricating a GaN layer, comprising: utilizing an N-polar surface or an M-plane surface of the GaN layer as a growth surface, wherein the N-polar surface or the M-plane surface is prepared and directly exposed using an ammonothermal growth technique and the N-polar surface or the M-plane surface is smoother than a Ga-polar surface of the GaN layer.
The method of claim 29, further comprising growing one or more group-I II nitride layers to the N-polar or M-plane surface of the GaN layer.
A method for growing a group-I II nitride layer, comprising: ammonothermally growing a group-I II nitride layer on a substrate, wherein the group-I II nitride layer comprises an N-face of a C-plane (000-1) or a M-plane {1 0-10 } that is directly exposed as a result of the growth of the group-I II nitride layer and the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is smoother than a Ga-face of the C-plane (0001).
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is substantially co-planar with a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is tilted with respect to a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted at an angle less than 10 degrees with respect to the surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } directly accepts growth of at least one additional group-I II nitride layer.
A method for fabricating a GaN substrate, comprising: directly growing a GaN substrate with an exposed N-face or M-plane surface that is of device quality using an ammonothermal growth method, wherein the exposed N-face or M-plane surface is smoother than a Ga-polar surface of the GaN substrate.
The method of claim 36, further comprising growing a group-I II nitride layer on the substrate, wherein the group III nitride layer comprises an N-face of a C-plane (000- 1) or M-plane {10-10} that is directly exposed as a result of the growth of the group-I II nitride layer.
The method of claim 36, wherein the N-face or M-plane is substantially co-planar with the plane of the substrate, rather than substantially perpendicular.
The method of claim 36, wherein the N-face or M- plane is slightl y misaligned with the plane of the substrate.
The method of claim 36, wherein the group-I II nitride layer directly accepts growth of at least one additional group-I II nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (LED/LD) on non-Ga-polar GaN substrate
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2.5–2.6 µm | — |
Pressure | ≤ 760 Torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,263,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1(a) and 1(b) are schematics of crystallographic directions and planes of 25 interest in hexagonal GaN;
FIG. 2 is a schematic of an autoclave according to an embodiment of the present invention;
FIG. 3 illustrates a process flow diagram;
FIG. 4 illustrates an example of a LED using a high-doped Mg layer on a N-polar (N- 30 face) substrate;
FIG. 5 illustrates a HEMT utilizing N-polar (N-face) smooth surface of GaN grown by the ammonothermal method;
FIGS. 6(a) and 6(b) illustrate GaN crystals grown in a first method in accordance with the present invention; 5
FIGS. 7(a) and 7(b) illustrate GaN crystals grown in a second method in accordance with the present invention;
FIG. 8 illustrates a 1 micron-thick GaN layer with a smooth surface grown on the GaN crystals of
FIG. 9 illustrates a process chart outlining the steps used to perform the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly growing a non-Ga-polar surface of gallium nitride (GaN), comprising: placing a seed crystal of GaN having an exposed non-Ga-polar surface of GaN into an autoclave; placing a mineralizer into the autoclave; placing a source into the autoclave; adding ammonia to the autoclave; heating the autoclave; and ammonothermally growing the GaN in the heated autoclave, using the mineralizer, source and ammonia, wherein the exposed non-Ga-polar surface of the GaN is smoother than a Ga-polar surface of the GaN.
The method of claim 1, wherein the mineralizer is selected from a group comprising NaNH2, KNH 2, LiNH2, NH₄C l, NH₄ B r, and N H₄I.
The method of claim 1, wherein the source comprises polycrystalline GaN.
The method of claim 1, wherein the autoclave is heated in zones.
The method of claim 1, wherein the source comprises Ga metal.
A method of fabricating a gallium nitride (GaN) substrate, comprising: ammonothermally growing a GaN substrate resulting in an exposed N-polar (N-face) or M-plane surface that is smoother than a Ga-polar (Ga-face) surface of the GaN substrate.
The method of claim 15, wherein the N-polar (N-face) or M-plane surface is smooth enough for growth of device layers.
A method of fabricating an opto-electronic device comprising: fabricating a GaN substrate from a GaN bulk crystal grown ammonothermally on a GaN seed, wherein a growth surface of the GaN bulk crystal is not a Ga-polar surface and the growth surface as grown is smoother than a Ga-polar surface; and growing one or more group III nitride layers on the growth surface of the GaN substrate.
The method of claim 19, wherein the growing step comprises: growing a plurality of n-type group III nitride layers on the growth surface; growing at least one group III nitride light-emitting active layer on the plurality of n-type group III nitride layers; and growing at least one p-type group III nitride layer having an Mg doping on the active layers.
The method of claim 19, wherein the growth surface is an M-plane {10-10 } surface.
The method of claim 19, wherein the growth surface is an A-plane {11- 20} surface.
The method of claim 19, wherein the growth surface is a {1 0 -11} surface.
The method of claim 19, wherein the growth surface is a {1 0 -1-1} surface.
The method of claim 19, wherein the growth surface is a {11-22} surface.
The method of claim 19, wherein the growth surface is a {11-2-2} surface.
The method of claim 19, wherein the growth surface is a {20-2 1 } surface.
A method for fabricating a GaN layer, comprising: utilizing an N-polar surface or an M-plane surface of the GaN layer as a growth surface, wherein the N-polar surface or the M-plane surface is prepared and directly exposed using an ammonothermal growth technique and the N-polar surface or the M-plane surface is smoother than a Ga-polar surface of the GaN layer.
The method of claim 29, further comprising growing one or more group-I II nitride layers to the N-polar or M-plane surface of the GaN layer.
A method for growing a group-I II nitride layer, comprising: ammonothermally growing a group-I II nitride layer on a substrate, wherein the group-I II nitride layer comprises an N-face of a C-plane (000-1) or a M-plane {1 0-10 } that is directly exposed as a result of the growth of the group-I II nitride layer and the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is smoother than a Ga-face of the C-plane (0001).
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is substantially co-planar with a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } is tilted with respect to a surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted at an angle less than 10 degrees with respect to the surface of the substrate.
The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {1 0-10 } directly accepts growth of at least one additional group-I II nitride layer.
A method for fabricating a GaN substrate, comprising: directly growing a GaN substrate with an exposed N-face or M-plane surface that is of device quality using an ammonothermal growth method, wherein the exposed N-face or M-plane surface is smoother than a Ga-polar surface of the GaN substrate.
The method of claim 36, further comprising growing a group-I II nitride layer on the substrate, wherein the group III nitride layer comprises an N-face of a C-plane (000- 1) or M-plane {10-10} that is directly exposed as a result of the growth of the group-I II nitride layer.
The method of claim 36, wherein the N-face or M-plane is substantially co-planar with the plane of the substrate, rather than substantially perpendicular.
The method of claim 36, wherein the N-face or M- plane is slightl y misaligned with the plane of the substrate.
The method of claim 36, wherein the group-I II nitride layer directly accepts growth of at least one additional group-I II nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (LED/LD) on non-Ga-polar GaN substrate
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2.5–2.6 µm | — |
Pressure | ≤ 760 Torr |
Related documents with shared materials, methods, properties, or citations.
NaNH₂
KNH₂
LiNH₂
NH₄Cl
NH₄Br
NH₄I
Ga metal
Ga
group III nitride layer
Mg-doped p-type group III nitride layer
AlGaN
| — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 0.1 µm | — |
NaNH₂
KNH₂
LiNH₂
NH₄Cl
NH₄Br
NH₄I
Ga metal
Ga
group III nitride layer
Mg-doped p-type group III nitride layer
AlGaN
| — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 0.1 µm | — |
NaNH₂
KNH₂
LiNH₂
NH₄Cl
NH₄Br
NH₄I
Ga metal
Ga
group III nitride layer
Mg-doped p-type group III nitride layer
AlGaN
| — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 0.1 µm | — |
NaNH₂
KNH₂
LiNH₂
NH₄Cl
NH₄Br
NH₄I
Ga metal
Ga
group III nitride layer
Mg-doped p-type group III nitride layer
AlGaN
| — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 0.1 µm | — |