Patent
US 10,100,436METHOD FOR MAKING GALLIUM NITRIDE EPITAXIAL LAYER BY SILICON SUBSTRATE
Yuan-Hao Jin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,100,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
FIGS. 16-18. [00072] In step (S₂₄), the method of removing the carbon nanotube composite structure 110 can be ultrasonic method, or adhesive tape peeling, …
FIGS. 21-24. [00077] In step (S₃₄), the baffle layer 16 can be deposited by electron beam evaporation, ion beam sputtering, atomic layer deposition, magnetron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube structure, wherein the carbon nanotube structure defines a plurality of openings; forming the carbon nanotube structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 1, wherein providing the carbon nanotube structure comprises stacking a plurality of carbon nanotube films.
The method of claim 1, wherein the carbon nanotube structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising removing the carbon nanotube structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising depositing a baffle layer to cover both the carbon nanotube structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube composite structure, wherein the carbon nanotube structure comprises a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, and the carbon nanotube structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; forming the carbon nanotube composite structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 11, wherein each of the plurality of carbon nanotubes is entirely enclosed by the protective layer.
The method of claim 11, wherein the carbon nanotube composite structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising removing the carbon nanotube composite structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising depositing a baffle layer to cover both the carbon nanotube composite structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: forming a carbon nanotube composite structure on a surface of a silicon substrate, wherein the carbon nanotube composite structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings, each of the plurality of carbon nanotubes is coated by a protective layer, and portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 18, wherein a width of the plurality of strip-shaped bulges is in a range from about 20 nanometers to about 100 nanometers; a distance between every two adjacent strip-shaped bulges of the plurality of strip-shaped bulges is in a range from about 10 nanometers to about 300 nanometers; and a height of the plurality of strip-shaped bulges is in a range from about 50 nanometers to about 1000 nanometers.
The method of claim 18, wherein the plurality of strip-shaped bulges comprises a plurality of first strip-shaped bulges and a plurality of second strip-shaped bulges; the plurality of first strip-shaped bulges are substantially parallel with each the plurality of second strip-shaped bulges are along a second direction different from the first and the second direction is greater than 30 degrees other and extends along a first direction, and substantially parallel with each other and extends direction; and an angle between the first direction and less than or equal to 90 degrees.
Layer stacks claimed or described, ordered top of device to substrate.
patterned silicon substrate with GaN epitaxial layer
Materials described outside the worked examples.
silicon substrate
Si
carbon nanotube structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,100,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
FIGS. 16-18. [00072] In step (S₂₄), the method of removing the carbon nanotube composite structure 110 can be ultrasonic method, or adhesive tape peeling, …
FIGS. 21-24. [00077] In step (S₃₄), the baffle layer 16 can be deposited by electron beam evaporation, ion beam sputtering, atomic layer deposition, magnetron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube structure, wherein the carbon nanotube structure defines a plurality of openings; forming the carbon nanotube structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 1, wherein providing the carbon nanotube structure comprises stacking a plurality of carbon nanotube films.
The method of claim 1, wherein the carbon nanotube structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising removing the carbon nanotube structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising depositing a baffle layer to cover both the carbon nanotube structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube composite structure, wherein the carbon nanotube structure comprises a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, and the carbon nanotube structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; forming the carbon nanotube composite structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 11, wherein each of the plurality of carbon nanotubes is entirely enclosed by the protective layer.
The method of claim 11, wherein the carbon nanotube composite structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising removing the carbon nanotube composite structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising depositing a baffle layer to cover both the carbon nanotube composite structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: forming a carbon nanotube composite structure on a surface of a silicon substrate, wherein the carbon nanotube composite structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings, each of the plurality of carbon nanotubes is coated by a protective layer, and portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 18, wherein a width of the plurality of strip-shaped bulges is in a range from about 20 nanometers to about 100 nanometers; a distance between every two adjacent strip-shaped bulges of the plurality of strip-shaped bulges is in a range from about 10 nanometers to about 300 nanometers; and a height of the plurality of strip-shaped bulges is in a range from about 50 nanometers to about 1000 nanometers.
The method of claim 18, wherein the plurality of strip-shaped bulges comprises a plurality of first strip-shaped bulges and a plurality of second strip-shaped bulges; the plurality of first strip-shaped bulges are substantially parallel with each the plurality of second strip-shaped bulges are along a second direction different from the first and the second direction is greater than 30 degrees other and extends along a first direction, and substantially parallel with each other and extends direction; and an angle between the first direction and less than or equal to 90 degrees.
Layer stacks claimed or described, ordered top of device to substrate.
patterned silicon substrate with GaN epitaxial layer
Materials described outside the worked examples.
silicon substrate
Si
carbon nanotube structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,100,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
FIGS. 16-18. [00072] In step (S₂₄), the method of removing the carbon nanotube composite structure 110 can be ultrasonic method, or adhesive tape peeling, …
FIGS. 21-24. [00077] In step (S₃₄), the baffle layer 16 can be deposited by electron beam evaporation, ion beam sputtering, atomic layer deposition, magnetron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube structure, wherein the carbon nanotube structure defines a plurality of openings; forming the carbon nanotube structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 1, wherein providing the carbon nanotube structure comprises stacking a plurality of carbon nanotube films.
The method of claim 1, wherein the carbon nanotube structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising removing the carbon nanotube structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising depositing a baffle layer to cover both the carbon nanotube structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube composite structure, wherein the carbon nanotube structure comprises a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, and the carbon nanotube structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; forming the carbon nanotube composite structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 11, wherein each of the plurality of carbon nanotubes is entirely enclosed by the protective layer.
The method of claim 11, wherein the carbon nanotube composite structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising removing the carbon nanotube composite structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising depositing a baffle layer to cover both the carbon nanotube composite structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: forming a carbon nanotube composite structure on a surface of a silicon substrate, wherein the carbon nanotube composite structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings, each of the plurality of carbon nanotubes is coated by a protective layer, and portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 18, wherein a width of the plurality of strip-shaped bulges is in a range from about 20 nanometers to about 100 nanometers; a distance between every two adjacent strip-shaped bulges of the plurality of strip-shaped bulges is in a range from about 10 nanometers to about 300 nanometers; and a height of the plurality of strip-shaped bulges is in a range from about 50 nanometers to about 1000 nanometers.
The method of claim 18, wherein the plurality of strip-shaped bulges comprises a plurality of first strip-shaped bulges and a plurality of second strip-shaped bulges; the plurality of first strip-shaped bulges are substantially parallel with each the plurality of second strip-shaped bulges are along a second direction different from the first and the second direction is greater than 30 degrees other and extends along a first direction, and substantially parallel with each other and extends direction; and an angle between the first direction and less than or equal to 90 degrees.
Layer stacks claimed or described, ordered top of device to substrate.
patterned silicon substrate with GaN epitaxial layer
Materials described outside the worked examples.
silicon substrate
Si
carbon nanotube structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,100,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
FIGS. 16-18. [00072] In step (S₂₄), the method of removing the carbon nanotube composite structure 110 can be ultrasonic method, or adhesive tape peeling, …
FIGS. 21-24. [00077] In step (S₃₄), the baffle layer 16 can be deposited by electron beam evaporation, ion beam sputtering, atomic layer deposition, magnetron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube structure, wherein the carbon nanotube structure defines a plurality of openings; forming the carbon nanotube structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 1, wherein providing the carbon nanotube structure comprises stacking a plurality of carbon nanotube films.
The method of claim 1, wherein the carbon nanotube structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising removing the carbon nanotube structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 1, further comprising depositing a baffle layer to cover both the carbon nanotube structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: providing a silicon substrate; providing a carbon nanotube composite structure, wherein the carbon nanotube structure comprises a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, and the carbon nanotube structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; forming the carbon nanotube composite structure on a surface of the silicon substrate, wherein portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 11, wherein each of the plurality of carbon nanotubes is entirely enclosed by the protective layer.
The method of claim 11, wherein the carbon nanotube composite structure is kept on the bulged pattern during the epitaxial growth of the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising removing the carbon nanotube composite structure from the patterned silicon substrate before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
The method of claim 11, further comprising depositing a baffle layer to cover both the carbon nanotube composite structure and the bulged pattern before epitaxially growing the GaN epitaxial layer on the patterned silicon substrate.
A method for making a GaN epitaxial layer, the method comprising: forming a carbon nanotube composite structure on a surface of a silicon substrate, wherein the carbon nanotube composite structure comprises a plurality of carbon nanotubes intersected with each other and defines a plurality of openings, each of the plurality of carbon nanotubes is coated by a protective layer, and portions of the surface of the silicon substrate are exposed from the plurality of openings to form a first exposed surface; forming a patterned silicon substrate having a bulged pattern by dry etching the first exposed surface using the carbon nanotube composite structure as a mask, wherein the bulged pattern comprises a plurality of strip-shaped bulges; and epitaxially growing a gallium nitride (GaN) epitaxial layer on the patterned silicon substrate.
The method of claim 18, wherein a width of the plurality of strip-shaped bulges is in a range from about 20 nanometers to about 100 nanometers; a distance between every two adjacent strip-shaped bulges of the plurality of strip-shaped bulges is in a range from about 10 nanometers to about 300 nanometers; and a height of the plurality of strip-shaped bulges is in a range from about 50 nanometers to about 1000 nanometers.
The method of claim 18, wherein the plurality of strip-shaped bulges comprises a plurality of first strip-shaped bulges and a plurality of second strip-shaped bulges; the plurality of first strip-shaped bulges are substantially parallel with each the plurality of second strip-shaped bulges are along a second direction different from the first and the second direction is greater than 30 degrees other and extends along a first direction, and substantially parallel with each other and extends direction; and an angle between the first direction and less than or equal to 90 degrees.
Layer stacks claimed or described, ordered top of device to substrate.
patterned silicon substrate with GaN epitaxial layer
Materials described outside the worked examples.
silicon substrate
Si
carbon nanotube structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. [00011] FIG 5 is an SEM image of one exemplary embodiment of two cross-stacked drawn carbon nanotube composite films. [00012] FIG 6 is a partially …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 20–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
gallium nitride epitaxial layer
GaN
baffle layer
protective layer
alumina
Al₂O₃
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
| — |
Thickness | 50–1000 nm | — |
gallium nitride epitaxial layer
GaN
baffle layer
protective layer
alumina
Al₂O₃
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
| — |
Thickness | 50–1000 nm | — |
gallium nitride epitaxial layer
GaN
baffle layer
protective layer
alumina
Al₂O₃
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
| — |
Thickness | 50–1000 nm | — |
gallium nitride epitaxial layer
GaN
baffle layer
protective layer
alumina
Al₂O₃
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 5-6, in one exemplary embodiment, an alumina layer of 5 nanometers thickness is deposited on two stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 7-8, in one exemplary embodiment, an alumina layer of 10 nanometers thickness is deposited on three stacked drawn carbon nanotube films by electron beam …
FIGS. 10-11 show a SEM image of one exemplary embodiment of a patterned silicon substrate viewed from above. FIG 12 is a SEM image of one exemplary embodiment …
| — |
Thickness | 50–1000 nm | — |