Patent
US 8,969,918ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED
Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,969,918Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
An enhancement mode gallium nitride (GaN) transistor having a rated gate voltage of 5 volts-er4 ess, comprising: a p-type GaN gate structure with a thickness of 600A t, wherein the thicknes 400O A to 900A, when the rate d gate voltage is 5 volts; and Fae ate volage i ess thanl-5 vo lts. currently amended
canceled
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
p-type gallium nitride (pGaN)
GaN
aluminum gallium nitride (AlGaN)
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pGaN gate structure thickness range for 5V rated gate voltage | 400–900 | GaN |
pGaN gate structure preferred thickness | 600 |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
Patent
Atlas literature
Patent
US 8,969,918Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
An enhancement mode gallium nitride (GaN) transistor having a rated gate voltage of 5 volts-er4 ess, comprising: a p-type GaN gate structure with a thickness of 600A t, wherein the thicknes 400O A to 900A, when the rate d gate voltage is 5 volts; and Fae ate volage i ess thanl-5 vo lts. currently amended
canceled
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
p-type gallium nitride (pGaN)
GaN
aluminum gallium nitride (AlGaN)
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pGaN gate structure thickness range for 5V rated gate voltage | 400–900 | GaN |
pGaN gate structure preferred thickness | 600 |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
Patent
Atlas literature
Patent
US 8,969,918Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
An enhancement mode gallium nitride (GaN) transistor having a rated gate voltage of 5 volts-er4 ess, comprising: a p-type GaN gate structure with a thickness of 600A t, wherein the thicknes 400O A to 900A, when the rate d gate voltage is 5 volts; and Fae ate volage i ess thanl-5 vo lts. currently amended
canceled
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
p-type gallium nitride (pGaN)
GaN
aluminum gallium nitride (AlGaN)
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pGaN gate structure thickness range for 5V rated gate voltage | 400–900 | GaN |
pGaN gate structure preferred thickness | 600 |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
Patent
Atlas literature
Patent
US 8,969,918Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
An enhancement mode gallium nitride (GaN) transistor having a rated gate voltage of 5 volts-er4 ess, comprising: a p-type GaN gate structure with a thickness of 600A t, wherein the thicknes 400O A to 900A, when the rate d gate voltage is 5 volts; and Fae ate volage i ess thanl-5 vo lts. currently amended
canceled
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
p-type gallium nitride (pGaN)
GaN
aluminum gallium nitride (AlGaN)
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an enhancement mode GaN transistor. [0014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pGaN gate structure thickness range for 5V rated gate voltage | 400–900 | GaN |
pGaN gate structure preferred thickness | 600 |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
EPITAXIAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND METHOD OF MAKING THEREOF
Mg-doped pGaN
GaN:Mg
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
GaN |
pGaN gate structure thickness — too thick (dielectric failure observed) | 1000 | GaN |
pGaN gate structure thickness — too thin (immeasurable current) | 300 | GaN |
Mg-doped pGaN
GaN:Mg
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
GaN |
pGaN gate structure thickness — too thick (dielectric failure observed) | 1000 | GaN |
pGaN gate structure thickness — too thin (immeasurable current) | 300 | GaN |
Mg-doped pGaN
GaN:Mg
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
GaN |
pGaN gate structure thickness — too thick (dielectric failure observed) | 1000 | GaN |
pGaN gate structure thickness — too thin (immeasurable current) | 300 | GaN |
Mg-doped pGaN
GaN:Mg
FIG. 2 is a circuit diagram of an enhancement mode GaN transistor. [0015]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 3 is a graph showing how transconductance varies for gates of varying thicknesses. [0016]
FIG. 4 is a graph showing the gate P-N junction I -V characteristics for devices with gates of varying thicknesses. [0017]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 5 shows the gate P-N junction I-V characteristics of a gate having a pGaN structure with a thickness t of 1 000A. [0018]
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 6 is a graph showing the gate P-N junction I-V characteristics for a pGaN structure with a thickness t of 1 000A compared with a structure with a …
FIG. 7 is a graph showing the overshoot associated with prior art gates.
GaN |
pGaN gate structure thickness — too thick (dielectric failure observed) | 1000 | GaN |
pGaN gate structure thickness — too thin (immeasurable current) | 300 | GaN |