Patent
US 9,343,532SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Suk Ho Choi
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,343,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Refe rr ing to
FIG. 2, the first graphene 200 may include a high resistive layer or an insulating layer on a boundary surface 250 on which the first graphene 200 is in contact …
FIG. 3.
FIG. 4 is a flowchart illustrating a method of doping impurities in graphene during a process of
FIG. 5.
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 8. Refe rr ing to
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: first graphene havin g o f a first doping type; and second graphene of a second doping type different from the first doping type, disposed on the first graphene and in contact with the first graphene wbereii the fist gra phenc co1anirsss and the high1 resistive la-is fonned1 on a b- oundary -surface bletween he f:ls gapen ad the second graphnce.
The semiconductor device of claim 1, wherein the first doping type is an n type and the second doping type is a p type.
The semiconductor device of claim 1, wherein each of the first graphene and the second graphene comprises a single layer.
The semiconductor device of claim 1, further comprising: a substrate provided below the first graphene; and a first electrode and a second electrode formed on the first graphene and the second graphene, respectively.
canceled
A semiconductor device comprising a p-n diode, wherein a current flowing in response to a forward voltage applied to the p-n diode is a first current, a current flowing in response to a reverse voltage applied to the p-n diode is a second current, and the second current is greater than the first current. wherein _ the js~n diode is formied tbrouoha i... unction between first gr~aptelie of a first doping type and second graphene of a second doping type different from the first doping type. the second graphene being disposed on the first graphene and in contact with the first Araphene. wherehi the firstIrhire conrp _ ses a high resistive layer, and tehigh1 resistive layeur-is formed on atyud-udc fir~ {:st.. rajtl ene an~d the second graphene.
The semiconductor device of claim 7, wherein the p n diode i s for m ed throu g h a junc i o n betwee n the f i rstdopig.type of the first graphene is a efp 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₃₉₈ App l n. No.: 14/419,138 type and the second doping type of the second graphen eef is an n type.
A method of fabricating a semiconductor device, the method comprising: form ing first graphene of a first doping type on a substrate; form ing second graphene of a second doping type different from the first doping type on the first graphene, making the second graphene in contact with the first graphene, and exposing a portion of the first graphene; and form ing a first electrode and a second electrode on the exposed first graphene and the second graphene, respectively. w1ierei nj he fornling of the first Qraphe t: f tz: first doping -typc: comprises: formt~ing fi r1-ll~i te grphneonTh substrate;z dropping a first dopant solution on the first pristine graphene for the dopant solution to be adsorbed on a portion of the first pristine graphene; tuiform'.coating te aisorbed first doant sohition over the tirst prstine gaphene; Ind pertonniflt thermal anneahn_ ol the first pristine;gapene over whih te first lonant solution is coated.
The method of claim 10, wherein the first doping type is an n type, and the second doping type is a p type.
The method of -elaim-42 claim 10, wherein a spin coater method is employed to uniformly coat the adsorbed first dopant solution over the first pristine graphene, and the thermal annealing employs a rapid thermal annealing (RTA) method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n vertical tunneling-junction semiconductor device
graphene p-n diode with anomalous I-V characteristics (reverse > forward current)
Materials described outside the worked examples.
n-type graphene
C
high resistive layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–30 minutes | — |
Table 1
Experiment examples about the semiconductor device of the present invention are summarized in Table 1.
p. 9
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PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
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Atlas literature
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US 9,343,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Refe rr ing to
FIG. 2, the first graphene 200 may include a high resistive layer or an insulating layer on a boundary surface 250 on which the first graphene 200 is in contact …
FIG. 3.
FIG. 4 is a flowchart illustrating a method of doping impurities in graphene during a process of
FIG. 5.
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 8. Refe rr ing to
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: first graphene havin g o f a first doping type; and second graphene of a second doping type different from the first doping type, disposed on the first graphene and in contact with the first graphene wbereii the fist gra phenc co1anirsss and the high1 resistive la-is fonned1 on a b- oundary -surface bletween he f:ls gapen ad the second graphnce.
The semiconductor device of claim 1, wherein the first doping type is an n type and the second doping type is a p type.
The semiconductor device of claim 1, wherein each of the first graphene and the second graphene comprises a single layer.
The semiconductor device of claim 1, further comprising: a substrate provided below the first graphene; and a first electrode and a second electrode formed on the first graphene and the second graphene, respectively.
canceled
A semiconductor device comprising a p-n diode, wherein a current flowing in response to a forward voltage applied to the p-n diode is a first current, a current flowing in response to a reverse voltage applied to the p-n diode is a second current, and the second current is greater than the first current. wherein _ the js~n diode is formied tbrouoha i... unction between first gr~aptelie of a first doping type and second graphene of a second doping type different from the first doping type. the second graphene being disposed on the first graphene and in contact with the first Araphene. wherehi the firstIrhire conrp _ ses a high resistive layer, and tehigh1 resistive layeur-is formed on atyud-udc fir~ {:st.. rajtl ene an~d the second graphene.
The semiconductor device of claim 7, wherein the p n diode i s for m ed throu g h a junc i o n betwee n the f i rstdopig.type of the first graphene is a efp 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₃₉₈ App l n. No.: 14/419,138 type and the second doping type of the second graphen eef is an n type.
A method of fabricating a semiconductor device, the method comprising: form ing first graphene of a first doping type on a substrate; form ing second graphene of a second doping type different from the first doping type on the first graphene, making the second graphene in contact with the first graphene, and exposing a portion of the first graphene; and form ing a first electrode and a second electrode on the exposed first graphene and the second graphene, respectively. w1ierei nj he fornling of the first Qraphe t: f tz: first doping -typc: comprises: formt~ing fi r1-ll~i te grphneonTh substrate;z dropping a first dopant solution on the first pristine graphene for the dopant solution to be adsorbed on a portion of the first pristine graphene; tuiform'.coating te aisorbed first doant sohition over the tirst prstine gaphene; Ind pertonniflt thermal anneahn_ ol the first pristine;gapene over whih te first lonant solution is coated.
The method of claim 10, wherein the first doping type is an n type, and the second doping type is a p type.
The method of -elaim-42 claim 10, wherein a spin coater method is employed to uniformly coat the adsorbed first dopant solution over the first pristine graphene, and the thermal annealing employs a rapid thermal annealing (RTA) method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n vertical tunneling-junction semiconductor device
graphene p-n diode with anomalous I-V characteristics (reverse > forward current)
Materials described outside the worked examples.
n-type graphene
C
high resistive layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–30 minutes | — |
Table 1
Experiment examples about the semiconductor device of the present invention are summarized in Table 1.
p. 9
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
Patent
Atlas literature
Patent
US 9,343,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Refe rr ing to
FIG. 2, the first graphene 200 may include a high resistive layer or an insulating layer on a boundary surface 250 on which the first graphene 200 is in contact …
FIG. 3.
FIG. 4 is a flowchart illustrating a method of doping impurities in graphene during a process of
FIG. 5.
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 8. Refe rr ing to
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: first graphene havin g o f a first doping type; and second graphene of a second doping type different from the first doping type, disposed on the first graphene and in contact with the first graphene wbereii the fist gra phenc co1anirsss and the high1 resistive la-is fonned1 on a b- oundary -surface bletween he f:ls gapen ad the second graphnce.
The semiconductor device of claim 1, wherein the first doping type is an n type and the second doping type is a p type.
The semiconductor device of claim 1, wherein each of the first graphene and the second graphene comprises a single layer.
The semiconductor device of claim 1, further comprising: a substrate provided below the first graphene; and a first electrode and a second electrode formed on the first graphene and the second graphene, respectively.
canceled
A semiconductor device comprising a p-n diode, wherein a current flowing in response to a forward voltage applied to the p-n diode is a first current, a current flowing in response to a reverse voltage applied to the p-n diode is a second current, and the second current is greater than the first current. wherein _ the js~n diode is formied tbrouoha i... unction between first gr~aptelie of a first doping type and second graphene of a second doping type different from the first doping type. the second graphene being disposed on the first graphene and in contact with the first Araphene. wherehi the firstIrhire conrp _ ses a high resistive layer, and tehigh1 resistive layeur-is formed on atyud-udc fir~ {:st.. rajtl ene an~d the second graphene.
The semiconductor device of claim 7, wherein the p n diode i s for m ed throu g h a junc i o n betwee n the f i rstdopig.type of the first graphene is a efp 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₃₉₈ App l n. No.: 14/419,138 type and the second doping type of the second graphen eef is an n type.
A method of fabricating a semiconductor device, the method comprising: form ing first graphene of a first doping type on a substrate; form ing second graphene of a second doping type different from the first doping type on the first graphene, making the second graphene in contact with the first graphene, and exposing a portion of the first graphene; and form ing a first electrode and a second electrode on the exposed first graphene and the second graphene, respectively. w1ierei nj he fornling of the first Qraphe t: f tz: first doping -typc: comprises: formt~ing fi r1-ll~i te grphneonTh substrate;z dropping a first dopant solution on the first pristine graphene for the dopant solution to be adsorbed on a portion of the first pristine graphene; tuiform'.coating te aisorbed first doant sohition over the tirst prstine gaphene; Ind pertonniflt thermal anneahn_ ol the first pristine;gapene over whih te first lonant solution is coated.
The method of claim 10, wherein the first doping type is an n type, and the second doping type is a p type.
The method of -elaim-42 claim 10, wherein a spin coater method is employed to uniformly coat the adsorbed first dopant solution over the first pristine graphene, and the thermal annealing employs a rapid thermal annealing (RTA) method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n vertical tunneling-junction semiconductor device
graphene p-n diode with anomalous I-V characteristics (reverse > forward current)
Materials described outside the worked examples.
n-type graphene
C
high resistive layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–30 minutes | — |
Table 1
Experiment examples about the semiconductor device of the present invention are summarized in Table 1.
p. 9
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
Patent
Atlas literature
Patent
US 9,343,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Refe rr ing to
FIG. 2, the first graphene 200 may include a high resistive layer or an insulating layer on a boundary surface 250 on which the first graphene 200 is in contact …
FIG. 3.
FIG. 4 is a flowchart illustrating a method of doping impurities in graphene during a process of
FIG. 5.
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 8. Refe rr ing to
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: first graphene havin g o f a first doping type; and second graphene of a second doping type different from the first doping type, disposed on the first graphene and in contact with the first graphene wbereii the fist gra phenc co1anirsss and the high1 resistive la-is fonned1 on a b- oundary -surface bletween he f:ls gapen ad the second graphnce.
The semiconductor device of claim 1, wherein the first doping type is an n type and the second doping type is a p type.
The semiconductor device of claim 1, wherein each of the first graphene and the second graphene comprises a single layer.
The semiconductor device of claim 1, further comprising: a substrate provided below the first graphene; and a first electrode and a second electrode formed on the first graphene and the second graphene, respectively.
canceled
A semiconductor device comprising a p-n diode, wherein a current flowing in response to a forward voltage applied to the p-n diode is a first current, a current flowing in response to a reverse voltage applied to the p-n diode is a second current, and the second current is greater than the first current. wherein _ the js~n diode is formied tbrouoha i... unction between first gr~aptelie of a first doping type and second graphene of a second doping type different from the first doping type. the second graphene being disposed on the first graphene and in contact with the first Araphene. wherehi the firstIrhire conrp _ ses a high resistive layer, and tehigh1 resistive layeur-is formed on atyud-udc fir~ {:st.. rajtl ene an~d the second graphene.
The semiconductor device of claim 7, wherein the p n diode i s for m ed throu g h a junc i o n betwee n the f i rstdopig.type of the first graphene is a efp 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₃₉₈ App l n. No.: 14/419,138 type and the second doping type of the second graphen eef is an n type.
A method of fabricating a semiconductor device, the method comprising: form ing first graphene of a first doping type on a substrate; form ing second graphene of a second doping type different from the first doping type on the first graphene, making the second graphene in contact with the first graphene, and exposing a portion of the first graphene; and form ing a first electrode and a second electrode on the exposed first graphene and the second graphene, respectively. w1ierei nj he fornling of the first Qraphe t: f tz: first doping -typc: comprises: formt~ing fi r1-ll~i te grphneonTh substrate;z dropping a first dopant solution on the first pristine graphene for the dopant solution to be adsorbed on a portion of the first pristine graphene; tuiform'.coating te aisorbed first doant sohition over the tirst prstine gaphene; Ind pertonniflt thermal anneahn_ ol the first pristine;gapene over whih te first lonant solution is coated.
The method of claim 10, wherein the first doping type is an n type, and the second doping type is a p type.
The method of -elaim-42 claim 10, wherein a spin coater method is employed to uniformly coat the adsorbed first dopant solution over the first pristine graphene, and the thermal annealing employs a rapid thermal annealing (RTA) method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n vertical tunneling-junction semiconductor device
graphene p-n diode with anomalous I-V characteristics (reverse > forward current)
Materials described outside the worked examples.
n-type graphene
C
high resistive layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–30 minutes | — |
Table 1
Experiment examples about the semiconductor device of the present invention are summarized in Table 1.
p. 9
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
dopant solution
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
dopant solution
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
dopant solution
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of
dopant solution
FIG. 6, B denotes a height difference between a pristine graphene sheet and the substrate. The height difference B from the substrate to the top surface of the …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 7. However, the n-type graphene shows sharp increases in both the thickness and the roughness as the doping time increases, compared to the p-type …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 9. That is, despite the increase of the concentration of the BV to be adsorbed on the graphene, resulting from the increase of the 13 doping time, the …
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 10, the sheet resistance of the n-type graphene gradually increases as the doping time increases, opposite to the result of
FIG. 11 is a graph showing doping time-dependent shifts of Dirac points of p-type graphene and n- type graphene used for a semiconductor device of the present …
FIG. 12. Refe rr ing to
FIG. 13 is a linear-scale graph showing the I -V characteristics of J₄ and J₁₅ in
FIG. 14 is a graph showing junction characteristics between an electrode and conductive layers of the semiconductor device of