Patent
US 8,772,910Doping Carbon Nanotubes and Graphene for Improving Electronic Mobility
Ali Afzali-Ardakani
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,772,910Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 8 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention; 15
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An apparatus, comprising: a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium a m monium nitrate and cerium a mm onium sulfate; and contact metal disposed over the doped channel region of the graphene or nanotube thin- film field-effect transistor device.
The apparatus of claim 18, wherein the dopant comprises a mixture of at least one charge transfer doping compound in a solvent at a concentration in a range of 0.1 millimole (mM) to 100 mM.
An apparatus, comprising: contact metal; and a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate and disposed over the contact metal, wherein a channel region of the graphene or nanotube thin- film field-effect transistor device is doped with a dopant to improve electronic mobility and, 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₈₉US 1 Confirmation No.: 2266 wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
The apparatus of claim 22, wherein the dopant transfer doping compound in a solvent at a mM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene or nanotube thin-film FET (contact metal over doped channel)
graphene or nanotube thin-film FET (device disposed over contact metal)
Materials described outside the worked examples.
cerium ammonium nitrate
cerium ammonium sulfate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mM | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
Patent
Atlas literature
Patent
US 8,772,910Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 8 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention; 15
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An apparatus, comprising: a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium a m monium nitrate and cerium a mm onium sulfate; and contact metal disposed over the doped channel region of the graphene or nanotube thin- film field-effect transistor device.
The apparatus of claim 18, wherein the dopant comprises a mixture of at least one charge transfer doping compound in a solvent at a concentration in a range of 0.1 millimole (mM) to 100 mM.
An apparatus, comprising: contact metal; and a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate and disposed over the contact metal, wherein a channel region of the graphene or nanotube thin- film field-effect transistor device is doped with a dopant to improve electronic mobility and, 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₈₉US 1 Confirmation No.: 2266 wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
The apparatus of claim 22, wherein the dopant transfer doping compound in a solvent at a mM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene or nanotube thin-film FET (contact metal over doped channel)
graphene or nanotube thin-film FET (device disposed over contact metal)
Materials described outside the worked examples.
cerium ammonium nitrate
cerium ammonium sulfate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mM | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
Patent
Atlas literature
Patent
US 8,772,910Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 8 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention; 15
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An apparatus, comprising: a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium a m monium nitrate and cerium a mm onium sulfate; and contact metal disposed over the doped channel region of the graphene or nanotube thin- film field-effect transistor device.
The apparatus of claim 18, wherein the dopant comprises a mixture of at least one charge transfer doping compound in a solvent at a concentration in a range of 0.1 millimole (mM) to 100 mM.
An apparatus, comprising: contact metal; and a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate and disposed over the contact metal, wherein a channel region of the graphene or nanotube thin- film field-effect transistor device is doped with a dopant to improve electronic mobility and, 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₈₉US 1 Confirmation No.: 2266 wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
The apparatus of claim 22, wherein the dopant transfer doping compound in a solvent at a mM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene or nanotube thin-film FET (contact metal over doped channel)
graphene or nanotube thin-film FET (device disposed over contact metal)
Materials described outside the worked examples.
cerium ammonium nitrate
cerium ammonium sulfate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mM | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
Patent
Atlas literature
Patent
US 8,772,910Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 8 illustrates a step in another embodiment of forming a CNFET, according to an embodiment of the present invention; 15
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An apparatus, comprising: a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium a m monium nitrate and cerium a mm onium sulfate; and contact metal disposed over the doped channel region of the graphene or nanotube thin- film field-effect transistor device.
The apparatus of claim 18, wherein the dopant comprises a mixture of at least one charge transfer doping compound in a solvent at a concentration in a range of 0.1 millimole (mM) to 100 mM.
An apparatus, comprising: contact metal; and a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate and disposed over the contact metal, wherein a channel region of the graphene or nanotube thin- film field-effect transistor device is doped with a dopant to improve electronic mobility and, 2 Attorney Docket No. Y O R₉₂₀₁₁₀₄₈₉US 1 Confirmation No.: 2266 wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
The apparatus of claim 22, wherein the dopant transfer doping compound in a solvent at a mM.
Layer stacks claimed or described, ordered top of device to substrate.
graphene or nanotube thin-film FET (contact metal over doped channel)
graphene or nanotube thin-film FET (device disposed over contact metal)
Materials described outside the worked examples.
cerium ammonium nitrate
cerium ammonium sulfate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mM | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
PASSIVE LAYER FOR ATTENUATION OF NEAR-FIELD ELECTROMAGNETIC WAVES AND HEATDISSIPATION INCLUDING GRAPHENE, AND ELECTROMAGNETIC DEVICE INCLUDING THE SAME
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
graphene or carbon nanotube thin film
ruthenium bipyridyl complex
triethyloxonium hexachloroantimonate
water
H₂O
dichloroethane
alcohol
dichlorobenzene
silicon dioxide
SiO₂
carbon nanotube
graphene
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
| 10–500 nm |
| — |
Thickness | 15–50 nm | — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
Duration | ≤ 10 minutes | — |
graphene or carbon nanotube thin film
ruthenium bipyridyl complex
triethyloxonium hexachloroantimonate
water
H₂O
dichloroethane
alcohol
dichlorobenzene
silicon dioxide
SiO₂
carbon nanotube
graphene
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
| 10–500 nm |
| — |
Thickness | 15–50 nm | — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
Duration | ≤ 10 minutes | — |
graphene or carbon nanotube thin film
ruthenium bipyridyl complex
triethyloxonium hexachloroantimonate
water
H₂O
dichloroethane
alcohol
dichlorobenzene
silicon dioxide
SiO₂
carbon nanotube
graphene
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
| 10–500 nm |
| — |
Thickness | 15–50 nm | — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
Duration | ≤ 10 minutes | — |
graphene or carbon nanotube thin film
ruthenium bipyridyl complex
triethyloxonium hexachloroantimonate
water
H₂O
dichloroethane
alcohol
dichlorobenzene
silicon dioxide
SiO₂
carbon nanotube
graphene
FIGS. 1-4. Metal portions 162 and 164, each having a thickness from about 15 nm to about 300 nm, form the FET source and drain. Metals such as Pd, Ti, W, Au, …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 2, a metal 160, having a thickness ranging from about 15 nm to about 50 nm, is deposited on the resist pattern and over portions of the carbon nanotube YO …
FIG. 3, the metal portions 162 and 164 remaining on the carbon nanotube or carbon nanotube film 140 form the FET source and drain. In this embodiment, the …
FIG. 4 illustrates the doping molecules bonding to the carbon nanotube or carbon nanotube film 140. The doped portion of the carbon nanotube or carbon nanotube …
FIG. 5 illustrates another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a nano- …
FIG. 6. As an example, a dilute hydrofluoric acid (HF) such as 100:1 HF can be used as an etchant for LTO. Additionally, the device is immersed in a dopant …
FIGS. 7-9 illustrate steps in another embodiment of forming a carbon nanotube or carbon nanotube film FET, or more generally, a FET with a channel comprising a …
FIG. 9 illustrates a step in an other embodiment of forming a C N FET, according to an embodiment of the present invention;
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 10 includes a graph 1002 illustrating channel resistance versus channel length for a carbon nanotube thin film transistor before 1006 and after 1004 doping …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 11 includes a graph 1010 illustrating mobility versus channel length for a 10 carbon nanotube thin film transistor before 1012 and after 1014 doping of the …
FIG. 12.
FIG. 12.
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 13 includes a graph illustrating FET channel doping using Ruthenium 25 Bipyridyl complex, according to an embodiment of the present invention. By way of …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
FIG. 14 includes a graph illustrating FET channel doping using Ruthenium Bipyridyl complex, according to an embodiment of the present invention. Detailed …
| 10–500 nm |
| — |
Thickness | 15–50 nm | — |
Thickness | 15–300 nm | — |
Thickness | 1–100 nm | — |
Duration | ≤ 10 minutes | — |