Patent
US 12,009,809 B2DRIVE MODULE FOR GaN TRANSISTOR, SWITCH CIRCUIT AND ELECTRONIC DEVICE
Min Xu, Jian Jin, Mengyuan Sun, Bin Wang et al.
FUDAN UNIVERSITY, Shanghai (CN)·Jun. 11, 2024·US
Copyright © 2026 Matter42. All rights reserved.
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US 12,009,809 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A drive module for a GaN transistor, comprising a first pull-down transistor and a gate ringing and overshoot sup-pression unit, wherein: a first end of the first pull-down transistor is directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is con-nected between a second end of the first pull-down transistor and ground, and the gate ringing and overshoot suppression unit is also directly or indirectly connected to the gate of the GaN transistor; the gate ringing and overshoot suppression unit comprises a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is con-nected to ground, and a gate voltage of the GaN transistor is applied to a gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the voltage which is applied to the gate of the second pull-down transistor is always the same as the gate voltage of the GaN transistor; and the gate ringing and overshoot suppression unit is con-figured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, wherein the first impedance is less than the second impedance.
The drive module according to claim 1, wherein the first pull-down transistor and the second pull-down transis-tor are NMOS transistors, the first end of the first pull-down transistor is a drain of the first pull-down transistor, the 60 second end of the first pull-down transistor is a source of the first pull-down transistor, the first end of the second pull-down transistor is a drain of the second pull-down transistor, and the second end of the second pull-down transistor is a source of the second pull-down transistor.
The drive module according to claim 1, wherein the specified threshold matches a zero-volt voltage.
The drive module according to claim 1, further com-prising a drive unit and a pull-up transistor, wherein: an input side of the drive unit is used to access a control signal of the GaN transistor, a first end of the pull-up transistor is used to access a voltage source, a second end of the pull-up transistor is directly or indirectly connected to the gate of the GaN transistor, and a gate of the pull-up transistor and the gate of the first pull-down transistor are connected to an output side of the drive unit; and the drive unit is configured to control one of the pull-up transistor and the first pull-down transistor to turn on according to the control signal.
The drive module according to claim 1, wherein the drive module is arranged on a same chip.
A switch circuit comprising the drive module accord-ing to claim 1 and the GaN transistor.
The drive module according to claim 1, wherein the gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor.
A drive module for a GaN transistor comprising: a first pull-down transistor having a first end connected to a gate of the GaN transistor and a second end; and a gate ringing and overshoot suppression unit comprising a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is connected to ground, and a gate of the second pull-down transistor is directly connected to the gate of the GaN transistor such that a gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the gate ringing and overshoot suppression unit is configured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance greater than the first impedance if the gate voltage is less than the specified threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
drive module for GaN transistor
switch circuit
Materials described outside the worked examples.
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
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US 12,009,809 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A drive module for a GaN transistor, comprising a first pull-down transistor and a gate ringing and overshoot sup-pression unit, wherein: a first end of the first pull-down transistor is directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is con-nected between a second end of the first pull-down transistor and ground, and the gate ringing and overshoot suppression unit is also directly or indirectly connected to the gate of the GaN transistor; the gate ringing and overshoot suppression unit comprises a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is con-nected to ground, and a gate voltage of the GaN transistor is applied to a gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the voltage which is applied to the gate of the second pull-down transistor is always the same as the gate voltage of the GaN transistor; and the gate ringing and overshoot suppression unit is con-figured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, wherein the first impedance is less than the second impedance.
The drive module according to claim 1, wherein the first pull-down transistor and the second pull-down transis-tor are NMOS transistors, the first end of the first pull-down transistor is a drain of the first pull-down transistor, the 60 second end of the first pull-down transistor is a source of the first pull-down transistor, the first end of the second pull-down transistor is a drain of the second pull-down transistor, and the second end of the second pull-down transistor is a source of the second pull-down transistor.
The drive module according to claim 1, wherein the specified threshold matches a zero-volt voltage.
The drive module according to claim 1, further com-prising a drive unit and a pull-up transistor, wherein: an input side of the drive unit is used to access a control signal of the GaN transistor, a first end of the pull-up transistor is used to access a voltage source, a second end of the pull-up transistor is directly or indirectly connected to the gate of the GaN transistor, and a gate of the pull-up transistor and the gate of the first pull-down transistor are connected to an output side of the drive unit; and the drive unit is configured to control one of the pull-up transistor and the first pull-down transistor to turn on according to the control signal.
The drive module according to claim 1, wherein the drive module is arranged on a same chip.
A switch circuit comprising the drive module accord-ing to claim 1 and the GaN transistor.
The drive module according to claim 1, wherein the gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor.
A drive module for a GaN transistor comprising: a first pull-down transistor having a first end connected to a gate of the GaN transistor and a second end; and a gate ringing and overshoot suppression unit comprising a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is connected to ground, and a gate of the second pull-down transistor is directly connected to the gate of the GaN transistor such that a gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the gate ringing and overshoot suppression unit is configured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance greater than the first impedance if the gate voltage is less than the specified threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
drive module for GaN transistor
switch circuit
Materials described outside the worked examples.
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,009,809 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A drive module for a GaN transistor, comprising a first pull-down transistor and a gate ringing and overshoot sup-pression unit, wherein: a first end of the first pull-down transistor is directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is con-nected between a second end of the first pull-down transistor and ground, and the gate ringing and overshoot suppression unit is also directly or indirectly connected to the gate of the GaN transistor; the gate ringing and overshoot suppression unit comprises a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is con-nected to ground, and a gate voltage of the GaN transistor is applied to a gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the voltage which is applied to the gate of the second pull-down transistor is always the same as the gate voltage of the GaN transistor; and the gate ringing and overshoot suppression unit is con-figured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, wherein the first impedance is less than the second impedance.
The drive module according to claim 1, wherein the first pull-down transistor and the second pull-down transis-tor are NMOS transistors, the first end of the first pull-down transistor is a drain of the first pull-down transistor, the 60 second end of the first pull-down transistor is a source of the first pull-down transistor, the first end of the second pull-down transistor is a drain of the second pull-down transistor, and the second end of the second pull-down transistor is a source of the second pull-down transistor.
The drive module according to claim 1, wherein the specified threshold matches a zero-volt voltage.
The drive module according to claim 1, further com-prising a drive unit and a pull-up transistor, wherein: an input side of the drive unit is used to access a control signal of the GaN transistor, a first end of the pull-up transistor is used to access a voltage source, a second end of the pull-up transistor is directly or indirectly connected to the gate of the GaN transistor, and a gate of the pull-up transistor and the gate of the first pull-down transistor are connected to an output side of the drive unit; and the drive unit is configured to control one of the pull-up transistor and the first pull-down transistor to turn on according to the control signal.
The drive module according to claim 1, wherein the drive module is arranged on a same chip.
A switch circuit comprising the drive module accord-ing to claim 1 and the GaN transistor.
The drive module according to claim 1, wherein the gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor.
A drive module for a GaN transistor comprising: a first pull-down transistor having a first end connected to a gate of the GaN transistor and a second end; and a gate ringing and overshoot suppression unit comprising a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is connected to ground, and a gate of the second pull-down transistor is directly connected to the gate of the GaN transistor such that a gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the gate ringing and overshoot suppression unit is configured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance greater than the first impedance if the gate voltage is less than the specified threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
drive module for GaN transistor
switch circuit
Materials described outside the worked examples.
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,009,809 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A drive module for a GaN transistor, comprising a first pull-down transistor and a gate ringing and overshoot sup-pression unit, wherein: a first end of the first pull-down transistor is directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is con-nected between a second end of the first pull-down transistor and ground, and the gate ringing and overshoot suppression unit is also directly or indirectly connected to the gate of the GaN transistor; the gate ringing and overshoot suppression unit comprises a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is con-nected to ground, and a gate voltage of the GaN transistor is applied to a gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the voltage which is applied to the gate of the second pull-down transistor is always the same as the gate voltage of the GaN transistor; and the gate ringing and overshoot suppression unit is con-figured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, wherein the first impedance is less than the second impedance.
The drive module according to claim 1, wherein the first pull-down transistor and the second pull-down transis-tor are NMOS transistors, the first end of the first pull-down transistor is a drain of the first pull-down transistor, the 60 second end of the first pull-down transistor is a source of the first pull-down transistor, the first end of the second pull-down transistor is a drain of the second pull-down transistor, and the second end of the second pull-down transistor is a source of the second pull-down transistor.
The drive module according to claim 1, wherein the specified threshold matches a zero-volt voltage.
The drive module according to claim 1, further com-prising a drive unit and a pull-up transistor, wherein: an input side of the drive unit is used to access a control signal of the GaN transistor, a first end of the pull-up transistor is used to access a voltage source, a second end of the pull-up transistor is directly or indirectly connected to the gate of the GaN transistor, and a gate of the pull-up transistor and the gate of the first pull-down transistor are connected to an output side of the drive unit; and the drive unit is configured to control one of the pull-up transistor and the first pull-down transistor to turn on according to the control signal.
The drive module according to claim 1, wherein the drive module is arranged on a same chip.
A switch circuit comprising the drive module accord-ing to claim 1 and the GaN transistor.
The drive module according to claim 1, wherein the gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor.
A drive module for a GaN transistor comprising: a first pull-down transistor having a first end connected to a gate of the GaN transistor and a second end; and a gate ringing and overshoot suppression unit comprising a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is connected to ground, and a gate of the second pull-down transistor is directly connected to the gate of the GaN transistor such that a gate voltage of the GaN transistor is directly applied to the gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the gate ringing and overshoot suppression unit is configured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot sup-pression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance greater than the first impedance if the gate voltage is less than the specified threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
drive module for GaN transistor
switch circuit
Materials described outside the worked examples.
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic diagram I of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50
FIG. 2 is a schematic diagram II of a structure of a GaN transistor and its drive module according to an embodiment 40 of the present invention;
FIG. 3 is a schematic diagram III of a structure of a GaN transistor and its drive module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram IV of a structure of a GaN 45 transistor and its drive module according to an embodiment of the present invention; and
FIG. 5 is a schematic diagram of a circuit of a GaN transistor and its drive module according to an embodiment of the present invention. 50