Patent
US 9,024,300Manufacture of graphene-based apparatus.
Martti Kalevi Voutilainen
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,024,300Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a stacked structure comprising: a first substrate having a flat surface; a flat first graphene layer adjacent the flat surface of the first substrate; a flat second graphene layer, formed independently of the flat first graphene layer, and positioned in direct contact with the flat first graphene layer; and a second substrate having a flat surface adjacent the flat second graphene layer; wherein the first and second graphene layers are rotated with respect to each other by an angle that is not a multiple of [[120]] 60 degrees.
An apparatus as claimed in claim 1, wherein the first substrate is a sacrificial substrate used for the formation of the first graphene layer and wherein the second substrate is a sacrificial substrate used for the flip transfer of at least the first and second graphene layers to a third substrate. previously presented
An apparatus as claimed in claim 1, wherein the lower and upper graphene layers are planar. 2 Serial No. 12/779,436 Reply to Office Action of 5-10.
An apparatus as claimed in claim 1, wherein the first graphene layer and/or the second graphene layer is/are doped. SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075283.7.307.882.2240.933.svg 0.17 6.443 Graph Black and white wherein the first graphene layer and the second graphene layer are differentially doped.
An apparatus as claimed in claim 1, wherein at least one of the first graphene layer and the second grapheme layer is differentially doped. previously presented
An apparatus as claimed in claim 1, wherein the flat first graphene layer and the flat second graphene layer are adhered together.
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A method comprising: forming a first component comprising a first graphene layer on a first substrate; forming a second component by forming a second graphene layer on a sacrificial substrate; forming a second substrate over the second graphene layer; and removing the sacrificial substrate; and joining the first component and the second component so that the first substrate and the second substrate are on opposite exterior surfaces of the resultant structure. 16-17. withdrawn
(W ithdrawn) A method as claimed in claim 15 further comprising: removing the first substrate to expose the first graphene layer forming a flat first patterned layer adjacent the first graphene layer; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.10.36.811.2246.867.svg 0.187 7.367 Graph Black and white patterned layer; removing the second substrate; and forming a flat second patterned layer adjacent the second graphene layer. withdrawn
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An apparatus comprising: a stacked structure comprising: a substrate having a flat upper surface; a flat lower patterned layer overlying the flat upper surface of the substrate and comprising at least one patterned source/drain electrode; a flat lower graphene layer overlying the flat lower patterned layer; a flat upper graphene layer overlying the flat lower graphene layer; and a flat upper patterned layer overlying the flat upper graphene layer and comprising at least one patterned source/drain electrode; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.29.450.2427.2243.2483.svg 0.187 5.977 Graph Black and white having a flat upper surface adjacent the lower graphene layer; [[and]] the upper graphene layer directly contacts the lower graphene layer, or the upper graphene layer is separated from the lower graphene layer by a dielectric layer only; and 4 Serial No. 12/779,436 Reply to Office Ac t ion of the flat upper graphene layer is rotated with respect to the flat lower graphene layer by an angle that is not a multiple of 60 degrees.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer has a flat lower surface adjacent the flat upper surface of the substrate.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer comprises at least one patterned gate electrode associated with the lower graphene layer.
An apparatus as claimed in claim 19, wherein the flat upper patterned layer is a planar layer having a flat upper surface and a flat lower surface adjacent the flat upper graphene layer. 26-40.
(Previously Presen t ed) An apparatus as claimed in claim 19, comprised in a transistor having a top gate formed by the flat upper patterned layer and a bottom gate formed by the flat lower patterned layer. 5 Serial No. 12/779,436 Reply to Office Action of 42-44.
An apparatus as claimed in claim 19, wherein lower graphene layer. previously presented
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A me t hod comprising: SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.6.309.549.2306.603.svg 0.18 6.657 Graph Black and white a stacked structure comprising: a first substrate; first and second graphene layers, wherein the first graphene layer is adjacent the first substrate; and a second substrate adjacent the second graphene layer; forming a first patterned layer adjacent the first graphene layer; providing a third substrate adjacent the first patterned layer; removing the second substrate; forming a second patterned layer adjacent the second graphene layer. 46-47. withdrawn
(W ithdrawn) A method as claimed in claim 45, comprising: after providing a third substrate adjacen t the first patterned SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.24.307.2080.2252.2133.svg 0.177 6.483 Graph Black and white structure so that the third substrate is a supporting base. 49-52. withdrawn
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canceled the upper graphene layer. the upper graphene layer directly contacts the
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene bilayer apparatus
dual-gated stacked graphene transistor apparatus
Materials described outside the worked examples.
first graphene layer
second graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,024,300Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a stacked structure comprising: a first substrate having a flat surface; a flat first graphene layer adjacent the flat surface of the first substrate; a flat second graphene layer, formed independently of the flat first graphene layer, and positioned in direct contact with the flat first graphene layer; and a second substrate having a flat surface adjacent the flat second graphene layer; wherein the first and second graphene layers are rotated with respect to each other by an angle that is not a multiple of [[120]] 60 degrees.
An apparatus as claimed in claim 1, wherein the first substrate is a sacrificial substrate used for the formation of the first graphene layer and wherein the second substrate is a sacrificial substrate used for the flip transfer of at least the first and second graphene layers to a third substrate. previously presented
An apparatus as claimed in claim 1, wherein the lower and upper graphene layers are planar. 2 Serial No. 12/779,436 Reply to Office Action of 5-10.
An apparatus as claimed in claim 1, wherein the first graphene layer and/or the second graphene layer is/are doped. SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075283.7.307.882.2240.933.svg 0.17 6.443 Graph Black and white wherein the first graphene layer and the second graphene layer are differentially doped.
An apparatus as claimed in claim 1, wherein at least one of the first graphene layer and the second grapheme layer is differentially doped. previously presented
An apparatus as claimed in claim 1, wherein the flat first graphene layer and the flat second graphene layer are adhered together.
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A method comprising: forming a first component comprising a first graphene layer on a first substrate; forming a second component by forming a second graphene layer on a sacrificial substrate; forming a second substrate over the second graphene layer; and removing the sacrificial substrate; and joining the first component and the second component so that the first substrate and the second substrate are on opposite exterior surfaces of the resultant structure. 16-17. withdrawn
(W ithdrawn) A method as claimed in claim 15 further comprising: removing the first substrate to expose the first graphene layer forming a flat first patterned layer adjacent the first graphene layer; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.10.36.811.2246.867.svg 0.187 7.367 Graph Black and white patterned layer; removing the second substrate; and forming a flat second patterned layer adjacent the second graphene layer. withdrawn
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An apparatus comprising: a stacked structure comprising: a substrate having a flat upper surface; a flat lower patterned layer overlying the flat upper surface of the substrate and comprising at least one patterned source/drain electrode; a flat lower graphene layer overlying the flat lower patterned layer; a flat upper graphene layer overlying the flat lower graphene layer; and a flat upper patterned layer overlying the flat upper graphene layer and comprising at least one patterned source/drain electrode; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.29.450.2427.2243.2483.svg 0.187 5.977 Graph Black and white having a flat upper surface adjacent the lower graphene layer; [[and]] the upper graphene layer directly contacts the lower graphene layer, or the upper graphene layer is separated from the lower graphene layer by a dielectric layer only; and 4 Serial No. 12/779,436 Reply to Office Ac t ion of the flat upper graphene layer is rotated with respect to the flat lower graphene layer by an angle that is not a multiple of 60 degrees.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer has a flat lower surface adjacent the flat upper surface of the substrate.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer comprises at least one patterned gate electrode associated with the lower graphene layer.
An apparatus as claimed in claim 19, wherein the flat upper patterned layer is a planar layer having a flat upper surface and a flat lower surface adjacent the flat upper graphene layer. 26-40.
(Previously Presen t ed) An apparatus as claimed in claim 19, comprised in a transistor having a top gate formed by the flat upper patterned layer and a bottom gate formed by the flat lower patterned layer. 5 Serial No. 12/779,436 Reply to Office Action of 42-44.
An apparatus as claimed in claim 19, wherein lower graphene layer. previously presented
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A me t hod comprising: SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.6.309.549.2306.603.svg 0.18 6.657 Graph Black and white a stacked structure comprising: a first substrate; first and second graphene layers, wherein the first graphene layer is adjacent the first substrate; and a second substrate adjacent the second graphene layer; forming a first patterned layer adjacent the first graphene layer; providing a third substrate adjacent the first patterned layer; removing the second substrate; forming a second patterned layer adjacent the second graphene layer. 46-47. withdrawn
(W ithdrawn) A method as claimed in claim 45, comprising: after providing a third substrate adjacen t the first patterned SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.24.307.2080.2252.2133.svg 0.177 6.483 Graph Black and white structure so that the third substrate is a supporting base. 49-52. withdrawn
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canceled the upper graphene layer. the upper graphene layer directly contacts the
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene bilayer apparatus
dual-gated stacked graphene transistor apparatus
Materials described outside the worked examples.
first graphene layer
second graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,024,300Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a stacked structure comprising: a first substrate having a flat surface; a flat first graphene layer adjacent the flat surface of the first substrate; a flat second graphene layer, formed independently of the flat first graphene layer, and positioned in direct contact with the flat first graphene layer; and a second substrate having a flat surface adjacent the flat second graphene layer; wherein the first and second graphene layers are rotated with respect to each other by an angle that is not a multiple of [[120]] 60 degrees.
An apparatus as claimed in claim 1, wherein the first substrate is a sacrificial substrate used for the formation of the first graphene layer and wherein the second substrate is a sacrificial substrate used for the flip transfer of at least the first and second graphene layers to a third substrate. previously presented
An apparatus as claimed in claim 1, wherein the lower and upper graphene layers are planar. 2 Serial No. 12/779,436 Reply to Office Action of 5-10.
An apparatus as claimed in claim 1, wherein the first graphene layer and/or the second graphene layer is/are doped. SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075283.7.307.882.2240.933.svg 0.17 6.443 Graph Black and white wherein the first graphene layer and the second graphene layer are differentially doped.
An apparatus as claimed in claim 1, wherein at least one of the first graphene layer and the second grapheme layer is differentially doped. previously presented
An apparatus as claimed in claim 1, wherein the flat first graphene layer and the flat second graphene layer are adhered together.
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A method comprising: forming a first component comprising a first graphene layer on a first substrate; forming a second component by forming a second graphene layer on a sacrificial substrate; forming a second substrate over the second graphene layer; and removing the sacrificial substrate; and joining the first component and the second component so that the first substrate and the second substrate are on opposite exterior surfaces of the resultant structure. 16-17. withdrawn
(W ithdrawn) A method as claimed in claim 15 further comprising: removing the first substrate to expose the first graphene layer forming a flat first patterned layer adjacent the first graphene layer; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.10.36.811.2246.867.svg 0.187 7.367 Graph Black and white patterned layer; removing the second substrate; and forming a flat second patterned layer adjacent the second graphene layer. withdrawn
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An apparatus comprising: a stacked structure comprising: a substrate having a flat upper surface; a flat lower patterned layer overlying the flat upper surface of the substrate and comprising at least one patterned source/drain electrode; a flat lower graphene layer overlying the flat lower patterned layer; a flat upper graphene layer overlying the flat lower graphene layer; and a flat upper patterned layer overlying the flat upper graphene layer and comprising at least one patterned source/drain electrode; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.29.450.2427.2243.2483.svg 0.187 5.977 Graph Black and white having a flat upper surface adjacent the lower graphene layer; [[and]] the upper graphene layer directly contacts the lower graphene layer, or the upper graphene layer is separated from the lower graphene layer by a dielectric layer only; and 4 Serial No. 12/779,436 Reply to Office Ac t ion of the flat upper graphene layer is rotated with respect to the flat lower graphene layer by an angle that is not a multiple of 60 degrees.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer has a flat lower surface adjacent the flat upper surface of the substrate.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer comprises at least one patterned gate electrode associated with the lower graphene layer.
An apparatus as claimed in claim 19, wherein the flat upper patterned layer is a planar layer having a flat upper surface and a flat lower surface adjacent the flat upper graphene layer. 26-40.
(Previously Presen t ed) An apparatus as claimed in claim 19, comprised in a transistor having a top gate formed by the flat upper patterned layer and a bottom gate formed by the flat lower patterned layer. 5 Serial No. 12/779,436 Reply to Office Action of 42-44.
An apparatus as claimed in claim 19, wherein lower graphene layer. previously presented
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A me t hod comprising: SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.6.309.549.2306.603.svg 0.18 6.657 Graph Black and white a stacked structure comprising: a first substrate; first and second graphene layers, wherein the first graphene layer is adjacent the first substrate; and a second substrate adjacent the second graphene layer; forming a first patterned layer adjacent the first graphene layer; providing a third substrate adjacent the first patterned layer; removing the second substrate; forming a second patterned layer adjacent the second graphene layer. 46-47. withdrawn
(W ithdrawn) A method as claimed in claim 45, comprising: after providing a third substrate adjacen t the first patterned SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.24.307.2080.2252.2133.svg 0.177 6.483 Graph Black and white structure so that the third substrate is a supporting base. 49-52. withdrawn
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canceled the upper graphene layer. the upper graphene layer directly contacts the
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene bilayer apparatus
dual-gated stacked graphene transistor apparatus
Materials described outside the worked examples.
first graphene layer
second graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,024,300Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a stacked structure comprising: a first substrate having a flat surface; a flat first graphene layer adjacent the flat surface of the first substrate; a flat second graphene layer, formed independently of the flat first graphene layer, and positioned in direct contact with the flat first graphene layer; and a second substrate having a flat surface adjacent the flat second graphene layer; wherein the first and second graphene layers are rotated with respect to each other by an angle that is not a multiple of [[120]] 60 degrees.
An apparatus as claimed in claim 1, wherein the first substrate is a sacrificial substrate used for the formation of the first graphene layer and wherein the second substrate is a sacrificial substrate used for the flip transfer of at least the first and second graphene layers to a third substrate. previously presented
An apparatus as claimed in claim 1, wherein the lower and upper graphene layers are planar. 2 Serial No. 12/779,436 Reply to Office Action of 5-10.
An apparatus as claimed in claim 1, wherein the first graphene layer and/or the second graphene layer is/are doped. SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075283.7.307.882.2240.933.svg 0.17 6.443 Graph Black and white wherein the first graphene layer and the second graphene layer are differentially doped.
An apparatus as claimed in claim 1, wherein at least one of the first graphene layer and the second grapheme layer is differentially doped. previously presented
An apparatus as claimed in claim 1, wherein the flat first graphene layer and the flat second graphene layer are adhered together.
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A method comprising: forming a first component comprising a first graphene layer on a first substrate; forming a second component by forming a second graphene layer on a sacrificial substrate; forming a second substrate over the second graphene layer; and removing the sacrificial substrate; and joining the first component and the second component so that the first substrate and the second substrate are on opposite exterior surfaces of the resultant structure. 16-17. withdrawn
(W ithdrawn) A method as claimed in claim 15 further comprising: removing the first substrate to expose the first graphene layer forming a flat first patterned layer adjacent the first graphene layer; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.10.36.811.2246.867.svg 0.187 7.367 Graph Black and white patterned layer; removing the second substrate; and forming a flat second patterned layer adjacent the second graphene layer. withdrawn
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An apparatus comprising: a stacked structure comprising: a substrate having a flat upper surface; a flat lower patterned layer overlying the flat upper surface of the substrate and comprising at least one patterned source/drain electrode; a flat lower graphene layer overlying the flat lower patterned layer; a flat upper graphene layer overlying the flat lower graphene layer; and a flat upper patterned layer overlying the flat upper graphene layer and comprising at least one patterned source/drain electrode; SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075284.29.450.2427.2243.2483.svg 0.187 5.977 Graph Black and white having a flat upper surface adjacent the lower graphene layer; [[and]] the upper graphene layer directly contacts the lower graphene layer, or the upper graphene layer is separated from the lower graphene layer by a dielectric layer only; and 4 Serial No. 12/779,436 Reply to Office Ac t ion of the flat upper graphene layer is rotated with respect to the flat lower graphene layer by an angle that is not a multiple of 60 degrees.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer has a flat lower surface adjacent the flat upper surface of the substrate.
An apparatus as claimed in claim 19, wherein the flat lower patterned layer comprises at least one patterned gate electrode associated with the lower graphene layer.
An apparatus as claimed in claim 19, wherein the flat upper patterned layer is a planar layer having a flat upper surface and a flat lower surface adjacent the flat upper graphene layer. 26-40.
(Previously Presen t ed) An apparatus as claimed in claim 19, comprised in a transistor having a top gate formed by the flat upper patterned layer and a bottom gate formed by the flat lower patterned layer. 5 Serial No. 12/779,436 Reply to Office Action of 42-44.
An apparatus as claimed in claim 19, wherein lower graphene layer. previously presented
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A me t hod comprising: SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.6.309.549.2306.603.svg 0.18 6.657 Graph Black and white a stacked structure comprising: a first substrate; first and second graphene layers, wherein the first graphene layer is adjacent the first substrate; and a second substrate adjacent the second graphene layer; forming a first patterned layer adjacent the first graphene layer; providing a third substrate adjacent the first patterned layer; removing the second substrate; forming a second patterned layer adjacent the second graphene layer. 46-47. withdrawn
(W ithdrawn) A method as claimed in claim 45, comprising: after providing a third substrate adjacen t the first patterned SVG 12779436.09-26-2014.I₀P₄YKN₂PXXIFW2.CLM30075286.24.307.2080.2252.2133.svg 0.177 6.483 Graph Black and white structure so that the third substrate is a supporting base. 49-52. withdrawn
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canceled the upper graphene layer. the upper graphene layer directly contacts the
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene bilayer apparatus
dual-gated stacked graphene transistor apparatus
Materials described outside the worked examples.
first graphene layer
second graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Related documents with shared materials, methods, properties, or citations.
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