Patent
US 11,810,782 B2CONDUCTIVE C-PLANE GAN SUBSTRATE
Yutaka Mikawa, Hideo Fujisawa, Tae Mochizuki, Hideo Namita et al.
MITSUBISHI CHEMICAL CORPORATION, Tokyo (JP)·Nov. 7, 2023·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,810,782 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B illustrate an example of the shape of a conductive C-plane GaN substrate according to an embodi- ment, with
FIGS. 2A to 2C are perspective views each illustrating a shape which a conductive C-plane GaN substrate according to an embodiment may have.
FIG. 3 is a plan view illustrating a conductive C-plane GaN substrate according to an embodiment. 30
FIG. 4 shows a flow chart of a GaN crystal growth method.
FIG. 5B is a perspective view illustrating the GaN seed after arrangement of a pattern mask on the nitrogen polar surface. 35
FIG. 6 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern mask.
FIG. 7 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern 40 mask.
FIGS. 8A to 8D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 9A to 9D are plan views each illustrating a GaN 45 seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 10A to 10D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface. 50
FIGS. 11A to 11F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN seed.
FIGS. 12A to 12F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN 55 seed.
FIG. 13E. The voids V are considered to relieve the stress generated between the GaN seed 20 and the GaN crystal 40, thereby reducing the distortion of the GaN …
FIG. 14A is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a 60 pattern mask in which linear openings form a …
FIG. 15A is a plan view illustrating part of a nitrogen 65 polar surface side of a GaN seed after arrangement of a pattern mask in which linear openings form a …
FIG. 16 illustrates a crystal growth apparatus which may be used for growing a GaN crystal by an ammonothermal method.
FIGS. 17A and 17B are cross sectional views each illus- trating positions at which a GaN crystal is sliced.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask having a periodic opening pattern comprising linear openings and least one intersection between openings, each intersection being continuous or discontinuous; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 1, wherein the periodic opening pattern comprises continuous intersections of linear openings.
The method according to claim 1, wherein the at least one intersection comprises a two-dimensional arrangement of intersections in the periodic opening pattern.
The method according to claim 1, wherein the pattern mask comprises: a first set of linear openings arranged at a pitch of less than 2 mm and a second set of linear openings arranged at 60 a pitch of 2 mm or more; a first set of linear openings arranged at a pitch of less than 3 mm and a second set of linear openings arranged at a pitch of 3 mm or more; or a first set of linear openings arranged at a pitch of less than 4 mm and a second set of linear openings arranged at a pitch of 4 mm or more.
The method according to claim 1, wherein: the periodic opening pattern is a quadrangular lattice pattern; the pattern mask comprises a first set of linear openings and a second set of linear openings, the first set of linear openings having a different longitudinal direction from the second set of linear openings.
The method according to claim 1, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that at least one linear opening has a longitudinal direction arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask results in formation of a void between the GaN crystal and the pattern mask.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask does not result in through holes remaining above nonopening portions of the pattern mask.
The method according to claim 1, wherein: ammonothermally growing a GaN crystal comprises employing a mineralizer; and the mineralizer comprises NH₄F and at least one selected from the group consisting of NH₄Cl, NH₄Br, and NH₄I.
The method according to claim 1, wherein the GaN seed has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the GaN crystal has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the C-plane GaN substrate has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein processing the GaN crystal to obtain the C-plane GaN substrate com-prises slicing the GaN crystal parallel or substantially par-allel to the C-plane. 41 42
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask comprising a plurality of parallel linear openings arranged at a pitch of less than 3 mm; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 23, wherein the plurality of parallel linear openings is arranged at a pitch of 15 at least 1 mm.
The method according to claim 23, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that a longitudinal direction of the plurality of parallel linear openings is arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
conductive C-plane GaN substrate
Materials described outside the worked examples.
GaN seed (nitrogen polar surface)
GaN
NH₄F mineralizer
NH₄F
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity (conductive C-plane GaN substrate) | ≤ 0.02 Ω·cm | GaN |
n-type carrier concentration (conductive C-plane GaN substrate) | ≥ 1000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 24
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,782 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B illustrate an example of the shape of a conductive C-plane GaN substrate according to an embodi- ment, with
FIGS. 2A to 2C are perspective views each illustrating a shape which a conductive C-plane GaN substrate according to an embodiment may have.
FIG. 3 is a plan view illustrating a conductive C-plane GaN substrate according to an embodiment. 30
FIG. 4 shows a flow chart of a GaN crystal growth method.
FIG. 5B is a perspective view illustrating the GaN seed after arrangement of a pattern mask on the nitrogen polar surface. 35
FIG. 6 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern mask.
FIG. 7 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern 40 mask.
FIGS. 8A to 8D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 9A to 9D are plan views each illustrating a GaN 45 seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 10A to 10D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface. 50
FIGS. 11A to 11F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN seed.
FIGS. 12A to 12F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN 55 seed.
FIG. 13E. The voids V are considered to relieve the stress generated between the GaN seed 20 and the GaN crystal 40, thereby reducing the distortion of the GaN …
FIG. 14A is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a 60 pattern mask in which linear openings form a …
FIG. 15A is a plan view illustrating part of a nitrogen 65 polar surface side of a GaN seed after arrangement of a pattern mask in which linear openings form a …
FIG. 16 illustrates a crystal growth apparatus which may be used for growing a GaN crystal by an ammonothermal method.
FIGS. 17A and 17B are cross sectional views each illus- trating positions at which a GaN crystal is sliced.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask having a periodic opening pattern comprising linear openings and least one intersection between openings, each intersection being continuous or discontinuous; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 1, wherein the periodic opening pattern comprises continuous intersections of linear openings.
The method according to claim 1, wherein the at least one intersection comprises a two-dimensional arrangement of intersections in the periodic opening pattern.
The method according to claim 1, wherein the pattern mask comprises: a first set of linear openings arranged at a pitch of less than 2 mm and a second set of linear openings arranged at 60 a pitch of 2 mm or more; a first set of linear openings arranged at a pitch of less than 3 mm and a second set of linear openings arranged at a pitch of 3 mm or more; or a first set of linear openings arranged at a pitch of less than 4 mm and a second set of linear openings arranged at a pitch of 4 mm or more.
The method according to claim 1, wherein: the periodic opening pattern is a quadrangular lattice pattern; the pattern mask comprises a first set of linear openings and a second set of linear openings, the first set of linear openings having a different longitudinal direction from the second set of linear openings.
The method according to claim 1, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that at least one linear opening has a longitudinal direction arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask results in formation of a void between the GaN crystal and the pattern mask.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask does not result in through holes remaining above nonopening portions of the pattern mask.
The method according to claim 1, wherein: ammonothermally growing a GaN crystal comprises employing a mineralizer; and the mineralizer comprises NH₄F and at least one selected from the group consisting of NH₄Cl, NH₄Br, and NH₄I.
The method according to claim 1, wherein the GaN seed has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the GaN crystal has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the C-plane GaN substrate has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein processing the GaN crystal to obtain the C-plane GaN substrate com-prises slicing the GaN crystal parallel or substantially par-allel to the C-plane. 41 42
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask comprising a plurality of parallel linear openings arranged at a pitch of less than 3 mm; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 23, wherein the plurality of parallel linear openings is arranged at a pitch of 15 at least 1 mm.
The method according to claim 23, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that a longitudinal direction of the plurality of parallel linear openings is arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
conductive C-plane GaN substrate
Materials described outside the worked examples.
GaN seed (nitrogen polar surface)
GaN
NH₄F mineralizer
NH₄F
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity (conductive C-plane GaN substrate) | ≤ 0.02 Ω·cm | GaN |
n-type carrier concentration (conductive C-plane GaN substrate) | ≥ 1000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 24
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,782 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B illustrate an example of the shape of a conductive C-plane GaN substrate according to an embodi- ment, with
FIGS. 2A to 2C are perspective views each illustrating a shape which a conductive C-plane GaN substrate according to an embodiment may have.
FIG. 3 is a plan view illustrating a conductive C-plane GaN substrate according to an embodiment. 30
FIG. 4 shows a flow chart of a GaN crystal growth method.
FIG. 5B is a perspective view illustrating the GaN seed after arrangement of a pattern mask on the nitrogen polar surface. 35
FIG. 6 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern mask.
FIG. 7 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern 40 mask.
FIGS. 8A to 8D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 9A to 9D are plan views each illustrating a GaN 45 seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 10A to 10D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface. 50
FIGS. 11A to 11F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN seed.
FIGS. 12A to 12F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN 55 seed.
FIG. 13E. The voids V are considered to relieve the stress generated between the GaN seed 20 and the GaN crystal 40, thereby reducing the distortion of the GaN …
FIG. 14A is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a 60 pattern mask in which linear openings form a …
FIG. 15A is a plan view illustrating part of a nitrogen 65 polar surface side of a GaN seed after arrangement of a pattern mask in which linear openings form a …
FIG. 16 illustrates a crystal growth apparatus which may be used for growing a GaN crystal by an ammonothermal method.
FIGS. 17A and 17B are cross sectional views each illus- trating positions at which a GaN crystal is sliced.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask having a periodic opening pattern comprising linear openings and least one intersection between openings, each intersection being continuous or discontinuous; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 1, wherein the periodic opening pattern comprises continuous intersections of linear openings.
The method according to claim 1, wherein the at least one intersection comprises a two-dimensional arrangement of intersections in the periodic opening pattern.
The method according to claim 1, wherein the pattern mask comprises: a first set of linear openings arranged at a pitch of less than 2 mm and a second set of linear openings arranged at 60 a pitch of 2 mm or more; a first set of linear openings arranged at a pitch of less than 3 mm and a second set of linear openings arranged at a pitch of 3 mm or more; or a first set of linear openings arranged at a pitch of less than 4 mm and a second set of linear openings arranged at a pitch of 4 mm or more.
The method according to claim 1, wherein: the periodic opening pattern is a quadrangular lattice pattern; the pattern mask comprises a first set of linear openings and a second set of linear openings, the first set of linear openings having a different longitudinal direction from the second set of linear openings.
The method according to claim 1, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that at least one linear opening has a longitudinal direction arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask results in formation of a void between the GaN crystal and the pattern mask.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask does not result in through holes remaining above nonopening portions of the pattern mask.
The method according to claim 1, wherein: ammonothermally growing a GaN crystal comprises employing a mineralizer; and the mineralizer comprises NH₄F and at least one selected from the group consisting of NH₄Cl, NH₄Br, and NH₄I.
The method according to claim 1, wherein the GaN seed has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the GaN crystal has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the C-plane GaN substrate has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein processing the GaN crystal to obtain the C-plane GaN substrate com-prises slicing the GaN crystal parallel or substantially par-allel to the C-plane. 41 42
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask comprising a plurality of parallel linear openings arranged at a pitch of less than 3 mm; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 23, wherein the plurality of parallel linear openings is arranged at a pitch of 15 at least 1 mm.
The method according to claim 23, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that a longitudinal direction of the plurality of parallel linear openings is arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
conductive C-plane GaN substrate
Materials described outside the worked examples.
GaN seed (nitrogen polar surface)
GaN
NH₄F mineralizer
NH₄F
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity (conductive C-plane GaN substrate) | ≤ 0.02 Ω·cm | GaN |
n-type carrier concentration (conductive C-plane GaN substrate) | ≥ 1000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 24
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,782 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B illustrate an example of the shape of a conductive C-plane GaN substrate according to an embodi- ment, with
FIGS. 2A to 2C are perspective views each illustrating a shape which a conductive C-plane GaN substrate according to an embodiment may have.
FIG. 3 is a plan view illustrating a conductive C-plane GaN substrate according to an embodiment. 30
FIG. 4 shows a flow chart of a GaN crystal growth method.
FIG. 5B is a perspective view illustrating the GaN seed after arrangement of a pattern mask on the nitrogen polar surface. 35
FIG. 6 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern mask.
FIG. 7 is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a pattern 40 mask.
FIGS. 8A to 8D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 9A to 9D are plan views each illustrating a GaN 45 seed with a pattern mask arranged on the nitrogen polar surface.
FIGS. 10A to 10D are plan views each illustrating a GaN seed with a pattern mask arranged on the nitrogen polar surface. 50
FIGS. 11A to 11F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN seed.
FIGS. 12A to 12F are plan views each illustrating part of a pattern mask formed on a nitrogen polar surface of a GaN 55 seed.
FIG. 13E. The voids V are considered to relieve the stress generated between the GaN seed 20 and the GaN crystal 40, thereby reducing the distortion of the GaN …
FIG. 14A is a plan view illustrating part of a nitrogen polar surface side of a GaN seed after arrangement of a 60 pattern mask in which linear openings form a …
FIG. 15A is a plan view illustrating part of a nitrogen 65 polar surface side of a GaN seed after arrangement of a pattern mask in which linear openings form a …
FIG. 16 illustrates a crystal growth apparatus which may be used for growing a GaN crystal by an ammonothermal method.
FIGS. 17A and 17B are cross sectional views each illus- trating positions at which a GaN crystal is sliced.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask having a periodic opening pattern comprising linear openings and least one intersection between openings, each intersection being continuous or discontinuous; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 1, wherein the periodic opening pattern comprises continuous intersections of linear openings.
The method according to claim 1, wherein the at least one intersection comprises a two-dimensional arrangement of intersections in the periodic opening pattern.
The method according to claim 1, wherein the pattern mask comprises: a first set of linear openings arranged at a pitch of less than 2 mm and a second set of linear openings arranged at 60 a pitch of 2 mm or more; a first set of linear openings arranged at a pitch of less than 3 mm and a second set of linear openings arranged at a pitch of 3 mm or more; or a first set of linear openings arranged at a pitch of less than 4 mm and a second set of linear openings arranged at a pitch of 4 mm or more.
The method according to claim 1, wherein: the periodic opening pattern is a quadrangular lattice pattern; the pattern mask comprises a first set of linear openings and a second set of linear openings, the first set of linear openings having a different longitudinal direction from the second set of linear openings.
The method according to claim 1, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that at least one linear opening has a longitudinal direction arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask results in formation of a void between the GaN crystal and the pattern mask.
The method according to claim 1, wherein ammono-thermally growing the GaN crystal through the pattern mask does not result in through holes remaining above nonopening portions of the pattern mask.
The method according to claim 1, wherein: ammonothermally growing a GaN crystal comprises employing a mineralizer; and the mineralizer comprises NH₄F and at least one selected from the group consisting of NH₄Cl, NH₄Br, and NH₄I.
The method according to claim 1, wherein the GaN seed has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the GaN crystal has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein the C-plane GaN substrate has a length of at least 45 mm in each of the [1-100] direction, the [10-10] direction, and the [01-10] direction.
The method according to claim 1, wherein processing the GaN crystal to obtain the C-plane GaN substrate com-prises slicing the GaN crystal parallel or substantially par-allel to the C-plane. 41 42
A method for preparing a C-plane GaN substrate, comprising: preparing a GaN seed having a nitrogen polar surface; disposing a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask comprising a plurality of parallel linear openings arranged at a pitch of less than 3 mm; ammonothermally growing a GaN crystal through the pattern mask on the nitrogen polar surface of the GaN seed, such that at least one gap is formed between the GaN crystal and the pattern mask; and processing the GaN crystal to obtain the C-plane GaN substrate.
The method according to claim 23, wherein the plurality of parallel linear openings is arranged at a pitch of 15 at least 1 mm.
The method according to claim 23, wherein the pattern mask is disposed on the nitrogen polar surface of the GaN seed such that a longitudinal direction of the plurality of parallel linear openings is arranged at an angle of 12°±5° with respect to a direction of a line of intersection between the nitrogen polar surface and an M-plane of the GaN seed. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
conductive C-plane GaN substrate
Materials described outside the worked examples.
GaN seed (nitrogen polar surface)
GaN
NH₄F mineralizer
NH₄F
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity (conductive C-plane GaN substrate) | ≤ 0.02 Ω·cm | GaN |
n-type carrier concentration (conductive C-plane GaN substrate) | ≥ 1000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 24
Related documents with shared materials, methods, properties, or citations.
NH₄Cl, NH₄Br, or NH₄I mineralizer
NH₄I mineralizer
NH₄I
XRC-FWHM of (004) reflection (max across 40 mm line segment, condition A1) | ≤ 30 arcsec | GaN |
XRC peak angle range (max-min across 40 mm line segment, condition B1) | ≤ 0.2 deg | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A2) | ≤ 20 arcsec | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A3) | ≤ 12 arcsec | GaN |
IR absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 cm⁻¹ | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3140–3200 cm | — |
Pressure | 100–250 MPa | — |
Temperature | 550–650 °C | — |
Thickness | 1–2 mm | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 250 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 400 µm | — |
Thickness | ≤ 500 µm | — |
Thickness | ≤ 750 µm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 120 cm | — |
Thickness | ≥ 150 cm | — |
Thickness | ≥ 160 cm | — |
Thickness | ≥ 170 cm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 45 mm | — |
Cited non-patent literature · 7
NH₄Cl, NH₄Br, or NH₄I mineralizer
NH₄I mineralizer
NH₄I
XRC-FWHM of (004) reflection (max across 40 mm line segment, condition A1) | ≤ 30 arcsec | GaN |
XRC peak angle range (max-min across 40 mm line segment, condition B1) | ≤ 0.2 deg | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A2) | ≤ 20 arcsec | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A3) | ≤ 12 arcsec | GaN |
IR absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 cm⁻¹ | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3140–3200 cm | — |
Pressure | 100–250 MPa | — |
Temperature | 550–650 °C | — |
Thickness | 1–2 mm | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 250 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 400 µm | — |
Thickness | ≤ 500 µm | — |
Thickness | ≤ 750 µm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 120 cm | — |
Thickness | ≥ 150 cm | — |
Thickness | ≥ 160 cm | — |
Thickness | ≥ 170 cm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 45 mm | — |
Cited non-patent literature · 7
NH₄Cl, NH₄Br, or NH₄I mineralizer
NH₄I mineralizer
NH₄I
XRC-FWHM of (004) reflection (max across 40 mm line segment, condition A1) | ≤ 30 arcsec | GaN |
XRC peak angle range (max-min across 40 mm line segment, condition B1) | ≤ 0.2 deg | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A2) | ≤ 20 arcsec | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A3) | ≤ 12 arcsec | GaN |
IR absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 cm⁻¹ | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3140–3200 cm | — |
Pressure | 100–250 MPa | — |
Temperature | 550–650 °C | — |
Thickness | 1–2 mm | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 250 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 400 µm | — |
Thickness | ≤ 500 µm | — |
Thickness | ≤ 750 µm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 120 cm | — |
Thickness | ≥ 150 cm | — |
Thickness | ≥ 160 cm | — |
Thickness | ≥ 170 cm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 45 mm | — |
Cited non-patent literature · 7
NH₄Cl, NH₄Br, or NH₄I mineralizer
NH₄I mineralizer
NH₄I
XRC-FWHM of (004) reflection (max across 40 mm line segment, condition A1) | ≤ 30 arcsec | GaN |
XRC peak angle range (max-min across 40 mm line segment, condition B1) | ≤ 0.2 deg | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A2) | ≤ 20 arcsec | GaN |
XRC-FWHM of (004) reflection (average across 40 mm line segment, condition A3) | ≤ 12 arcsec | GaN |
IR absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 cm⁻¹ | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3140–3200 cm | — |
Pressure | 100–250 MPa | — |
Temperature | 550–650 °C | — |
Thickness | 1–2 mm | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 250 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 400 µm | — |
Thickness | ≤ 500 µm | — |
Thickness | ≤ 750 µm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 120 cm | — |
Thickness | ≥ 150 cm | — |
Thickness | ≥ 160 cm | — |
Thickness | ≥ 170 cm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 45 mm | — |
Cited non-patent literature · 7