Patent
US 12,581,773 B2INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODES WITH REDUCED STRAIN
Aurelien Jean Francois David
GOOGLE LLC, Mountain View, CA (US)·Mar. 17, 2026·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,581,773 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B are cross-sectional diagrams of example LED emitters.
FIGS. 2A and 2B are cross-sectional diagrams of example LED emitters showing composition of different layers.
FIGS. 3A-3D show steps in an example process flow to 25 fabricate a base region having lateral structures.
FIGS. 4A-4C show steps another example process flow to fabricate a base region having lateral structures.
FIG. 5A.
FIG. 6B are cross-sectional diagrams show- ing example LED emitters with an offcut.
FIG. 7A.
FIGS. 8A-8I show steps in an example process flow for fabricating an LED emitter. 40
FIG. 9 is a plot showing example relationships between wavelength and internal quantum efficiency for an example embodiment and prior art.
FIG. 10A-10E are cross-sectional diagrams showing an example process with LED region regrowths. 45
FIGS. 11A-11F are cross-sectional diagrams showing steps in an example process flow to cover LED emitter sidewalls.
FIG. 12B are cross-sectional diagrams showing geometry and strain state of an example LED 50 emitter.
FIGS. 13A-13C show the evolution of various quantities when a NW LED emitter is grown according to
FIG. 14 is a flow chart showing steps in an example 55 process for forming LED devices.
FIGS. 15A-15D are cross-sectional diagrams showing further example embodiments of LED emitters.
FIGS. 16A-16C are cross sectional diagrams showing steps in an example fabrication process for platelet LEDs. 60
FIGS. 17B-17D are plots illustrating lateral variations in active region properties, from a center structure to an edge structure, in the example LED emitter …
FIGS. 18A-18H are cross-sectional diagrams showing steps in an example process for forming LED emitters. B₂
FIGS. 19A-19G are cross-sectional diagrams showing steps in another example process for forming LED emitters.
FIG. 81. The base regions may be combined spatially on the submount such that each base region corresponds to a type of subpixel. For instance, three base …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an LED emitter, the method comprising: providing a III-nitride layer on a substrate and having a planar top surface; selectively epitaxially growing, on each of a plurality of lateral growth regions that are discrete on the planar top surface, a base region comprising an In(x)Ga(1-x)N material extending in a direction perpendicular to the planar top surface; providing surfaces of the In(x)Ga(1-x)N material on por-tions of the base regions, the surfaces of the In(x)Ga (1-x)N material having a relaxed strain, the surfaces of the In(x)Ga(1-x)N material having a base lattice con-stant within 0.1% of a bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions comprising light-emitting layers of In(y1)Ga(1-y1)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and having an active region lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.15 and y>0.2, and wherein the base regions and LED regions form mesas, and a surface of each mesa opposite the planar top surface has a lateral dimension that is smaller than a lateral dimension of the lateral growth region.
The method of claim 1, wherein the In(x)Ga(1-x)N material relaxes during the growth of the base region.
The method of claim 1, wherein relaxation begins before 1 µm of base region material is grown.
The method of claim 1, wherein the epitaxial growth of the LED regions promotes a reduction of lateral dimensions of the LED regions above lateral growth regions.
The method of claim 1, wherein the mesas include slanted sidewalls.
The method of claim 1, further comprising depositing 5 a material on sidewalls of the mesas after epitaxial steps to passivate the mesas.
The method of claim 1, wherein the light-emitting region has total area comprising a central area corresponding to a central region and a peripheral area corresponding to a peripheral region, wherein the peripheral area is 10% or more of the total area and, during operation of the LED emitter, 5% or less of a light emitted by the active region originates from the peripheral region.
The method of claim 1, wherein the lateral growth regions are first lateral growth regions and the method further comprises: forming discrete second lateral growth regions on the planar top surface; epitaxially growing second base regions on the second lateral growth regions; epitaxially growing, on corresponding surfaces of the 25 second base regions, second LED regions comprising light-emitting layers of In(y2)Ga(1-y2)N material; forming discrete third lateral growth regions on the planar top surface; epitaxially growing third base regions on the third lateral growth regions; epitaxially growing, on corresponding surfaces of the third base regions, third LED regions comprising light-emitting layers of In(y3)Ga(1-y3)N material, wherein y1>y2>y3, and the first, second and third LED regions respectively emit red, green, and blue light during operation.
The method of claim 1, wherein the relaxed strain is a relaxed misfit strain, whose value is less than 50% of a misfit strain for In(x)Ga(1-x)N grown pseudomorphically on GaN.
The method of claim 1, wherein the epitaxial growth of the base regions and the epitaxial growth of the LED region occur in separate epitaxial steps, with the surfaces of the In(x)Ga(1-x)N material are regrowth interfaces.
The method of claim 1, wherein the base region includes separate base regions.
The method of claim 1, wherein the base region includes discrete base regions. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InGaN mesa LED emitter
RGB pixel display emitter (red, green, blue sub-pixels)
Materials described outside the worked examples.
In(x)Ga(1-x)N base region material
InxGa₁-xN
In(y1)Ga(1-y1)N light-emitting layer
Iny1Ga₁-y1N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
base lattice constant within 0.1% of bulk relaxed value | — | InxGa₁-xN |
active region lattice constant within 0.1% of base lattice constant | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,581,773 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B are cross-sectional diagrams of example LED emitters.
FIGS. 2A and 2B are cross-sectional diagrams of example LED emitters showing composition of different layers.
FIGS. 3A-3D show steps in an example process flow to 25 fabricate a base region having lateral structures.
FIGS. 4A-4C show steps another example process flow to fabricate a base region having lateral structures.
FIG. 5A.
FIG. 6B are cross-sectional diagrams show- ing example LED emitters with an offcut.
FIG. 7A.
FIGS. 8A-8I show steps in an example process flow for fabricating an LED emitter. 40
FIG. 9 is a plot showing example relationships between wavelength and internal quantum efficiency for an example embodiment and prior art.
FIG. 10A-10E are cross-sectional diagrams showing an example process with LED region regrowths. 45
FIGS. 11A-11F are cross-sectional diagrams showing steps in an example process flow to cover LED emitter sidewalls.
FIG. 12B are cross-sectional diagrams showing geometry and strain state of an example LED 50 emitter.
FIGS. 13A-13C show the evolution of various quantities when a NW LED emitter is grown according to
FIG. 14 is a flow chart showing steps in an example 55 process for forming LED devices.
FIGS. 15A-15D are cross-sectional diagrams showing further example embodiments of LED emitters.
FIGS. 16A-16C are cross sectional diagrams showing steps in an example fabrication process for platelet LEDs. 60
FIGS. 17B-17D are plots illustrating lateral variations in active region properties, from a center structure to an edge structure, in the example LED emitter …
FIGS. 18A-18H are cross-sectional diagrams showing steps in an example process for forming LED emitters. B₂
FIGS. 19A-19G are cross-sectional diagrams showing steps in another example process for forming LED emitters.
FIG. 81. The base regions may be combined spatially on the submount such that each base region corresponds to a type of subpixel. For instance, three base …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an LED emitter, the method comprising: providing a III-nitride layer on a substrate and having a planar top surface; selectively epitaxially growing, on each of a plurality of lateral growth regions that are discrete on the planar top surface, a base region comprising an In(x)Ga(1-x)N material extending in a direction perpendicular to the planar top surface; providing surfaces of the In(x)Ga(1-x)N material on por-tions of the base regions, the surfaces of the In(x)Ga (1-x)N material having a relaxed strain, the surfaces of the In(x)Ga(1-x)N material having a base lattice con-stant within 0.1% of a bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions comprising light-emitting layers of In(y1)Ga(1-y1)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and having an active region lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.15 and y>0.2, and wherein the base regions and LED regions form mesas, and a surface of each mesa opposite the planar top surface has a lateral dimension that is smaller than a lateral dimension of the lateral growth region.
The method of claim 1, wherein the In(x)Ga(1-x)N material relaxes during the growth of the base region.
The method of claim 1, wherein relaxation begins before 1 µm of base region material is grown.
The method of claim 1, wherein the epitaxial growth of the LED regions promotes a reduction of lateral dimensions of the LED regions above lateral growth regions.
The method of claim 1, wherein the mesas include slanted sidewalls.
The method of claim 1, further comprising depositing 5 a material on sidewalls of the mesas after epitaxial steps to passivate the mesas.
The method of claim 1, wherein the light-emitting region has total area comprising a central area corresponding to a central region and a peripheral area corresponding to a peripheral region, wherein the peripheral area is 10% or more of the total area and, during operation of the LED emitter, 5% or less of a light emitted by the active region originates from the peripheral region.
The method of claim 1, wherein the lateral growth regions are first lateral growth regions and the method further comprises: forming discrete second lateral growth regions on the planar top surface; epitaxially growing second base regions on the second lateral growth regions; epitaxially growing, on corresponding surfaces of the 25 second base regions, second LED regions comprising light-emitting layers of In(y2)Ga(1-y2)N material; forming discrete third lateral growth regions on the planar top surface; epitaxially growing third base regions on the third lateral growth regions; epitaxially growing, on corresponding surfaces of the third base regions, third LED regions comprising light-emitting layers of In(y3)Ga(1-y3)N material, wherein y1>y2>y3, and the first, second and third LED regions respectively emit red, green, and blue light during operation.
The method of claim 1, wherein the relaxed strain is a relaxed misfit strain, whose value is less than 50% of a misfit strain for In(x)Ga(1-x)N grown pseudomorphically on GaN.
The method of claim 1, wherein the epitaxial growth of the base regions and the epitaxial growth of the LED region occur in separate epitaxial steps, with the surfaces of the In(x)Ga(1-x)N material are regrowth interfaces.
The method of claim 1, wherein the base region includes separate base regions.
The method of claim 1, wherein the base region includes discrete base regions. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InGaN mesa LED emitter
RGB pixel display emitter (red, green, blue sub-pixels)
Materials described outside the worked examples.
In(x)Ga(1-x)N base region material
InxGa₁-xN
In(y1)Ga(1-y1)N light-emitting layer
Iny1Ga₁-y1N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
base lattice constant within 0.1% of bulk relaxed value | — | InxGa₁-xN |
active region lattice constant within 0.1% of base lattice constant | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,581,773 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B are cross-sectional diagrams of example LED emitters.
FIGS. 2A and 2B are cross-sectional diagrams of example LED emitters showing composition of different layers.
FIGS. 3A-3D show steps in an example process flow to 25 fabricate a base region having lateral structures.
FIGS. 4A-4C show steps another example process flow to fabricate a base region having lateral structures.
FIG. 5A.
FIG. 6B are cross-sectional diagrams show- ing example LED emitters with an offcut.
FIG. 7A.
FIGS. 8A-8I show steps in an example process flow for fabricating an LED emitter. 40
FIG. 9 is a plot showing example relationships between wavelength and internal quantum efficiency for an example embodiment and prior art.
FIG. 10A-10E are cross-sectional diagrams showing an example process with LED region regrowths. 45
FIGS. 11A-11F are cross-sectional diagrams showing steps in an example process flow to cover LED emitter sidewalls.
FIG. 12B are cross-sectional diagrams showing geometry and strain state of an example LED 50 emitter.
FIGS. 13A-13C show the evolution of various quantities when a NW LED emitter is grown according to
FIG. 14 is a flow chart showing steps in an example 55 process for forming LED devices.
FIGS. 15A-15D are cross-sectional diagrams showing further example embodiments of LED emitters.
FIGS. 16A-16C are cross sectional diagrams showing steps in an example fabrication process for platelet LEDs. 60
FIGS. 17B-17D are plots illustrating lateral variations in active region properties, from a center structure to an edge structure, in the example LED emitter …
FIGS. 18A-18H are cross-sectional diagrams showing steps in an example process for forming LED emitters. B₂
FIGS. 19A-19G are cross-sectional diagrams showing steps in another example process for forming LED emitters.
FIG. 81. The base regions may be combined spatially on the submount such that each base region corresponds to a type of subpixel. For instance, three base …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an LED emitter, the method comprising: providing a III-nitride layer on a substrate and having a planar top surface; selectively epitaxially growing, on each of a plurality of lateral growth regions that are discrete on the planar top surface, a base region comprising an In(x)Ga(1-x)N material extending in a direction perpendicular to the planar top surface; providing surfaces of the In(x)Ga(1-x)N material on por-tions of the base regions, the surfaces of the In(x)Ga (1-x)N material having a relaxed strain, the surfaces of the In(x)Ga(1-x)N material having a base lattice con-stant within 0.1% of a bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions comprising light-emitting layers of In(y1)Ga(1-y1)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and having an active region lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.15 and y>0.2, and wherein the base regions and LED regions form mesas, and a surface of each mesa opposite the planar top surface has a lateral dimension that is smaller than a lateral dimension of the lateral growth region.
The method of claim 1, wherein the In(x)Ga(1-x)N material relaxes during the growth of the base region.
The method of claim 1, wherein relaxation begins before 1 µm of base region material is grown.
The method of claim 1, wherein the epitaxial growth of the LED regions promotes a reduction of lateral dimensions of the LED regions above lateral growth regions.
The method of claim 1, wherein the mesas include slanted sidewalls.
The method of claim 1, further comprising depositing 5 a material on sidewalls of the mesas after epitaxial steps to passivate the mesas.
The method of claim 1, wherein the light-emitting region has total area comprising a central area corresponding to a central region and a peripheral area corresponding to a peripheral region, wherein the peripheral area is 10% or more of the total area and, during operation of the LED emitter, 5% or less of a light emitted by the active region originates from the peripheral region.
The method of claim 1, wherein the lateral growth regions are first lateral growth regions and the method further comprises: forming discrete second lateral growth regions on the planar top surface; epitaxially growing second base regions on the second lateral growth regions; epitaxially growing, on corresponding surfaces of the 25 second base regions, second LED regions comprising light-emitting layers of In(y2)Ga(1-y2)N material; forming discrete third lateral growth regions on the planar top surface; epitaxially growing third base regions on the third lateral growth regions; epitaxially growing, on corresponding surfaces of the third base regions, third LED regions comprising light-emitting layers of In(y3)Ga(1-y3)N material, wherein y1>y2>y3, and the first, second and third LED regions respectively emit red, green, and blue light during operation.
The method of claim 1, wherein the relaxed strain is a relaxed misfit strain, whose value is less than 50% of a misfit strain for In(x)Ga(1-x)N grown pseudomorphically on GaN.
The method of claim 1, wherein the epitaxial growth of the base regions and the epitaxial growth of the LED region occur in separate epitaxial steps, with the surfaces of the In(x)Ga(1-x)N material are regrowth interfaces.
The method of claim 1, wherein the base region includes separate base regions.
The method of claim 1, wherein the base region includes discrete base regions. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InGaN mesa LED emitter
RGB pixel display emitter (red, green, blue sub-pixels)
Materials described outside the worked examples.
In(x)Ga(1-x)N base region material
InxGa₁-xN
In(y1)Ga(1-y1)N light-emitting layer
Iny1Ga₁-y1N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
base lattice constant within 0.1% of bulk relaxed value | — | InxGa₁-xN |
active region lattice constant within 0.1% of base lattice constant | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,581,773 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B are cross-sectional diagrams of example LED emitters.
FIGS. 2A and 2B are cross-sectional diagrams of example LED emitters showing composition of different layers.
FIGS. 3A-3D show steps in an example process flow to 25 fabricate a base region having lateral structures.
FIGS. 4A-4C show steps another example process flow to fabricate a base region having lateral structures.
FIG. 5A.
FIG. 6B are cross-sectional diagrams show- ing example LED emitters with an offcut.
FIG. 7A.
FIGS. 8A-8I show steps in an example process flow for fabricating an LED emitter. 40
FIG. 9 is a plot showing example relationships between wavelength and internal quantum efficiency for an example embodiment and prior art.
FIG. 10A-10E are cross-sectional diagrams showing an example process with LED region regrowths. 45
FIGS. 11A-11F are cross-sectional diagrams showing steps in an example process flow to cover LED emitter sidewalls.
FIG. 12B are cross-sectional diagrams showing geometry and strain state of an example LED 50 emitter.
FIGS. 13A-13C show the evolution of various quantities when a NW LED emitter is grown according to
FIG. 14 is a flow chart showing steps in an example 55 process for forming LED devices.
FIGS. 15A-15D are cross-sectional diagrams showing further example embodiments of LED emitters.
FIGS. 16A-16C are cross sectional diagrams showing steps in an example fabrication process for platelet LEDs. 60
FIGS. 17B-17D are plots illustrating lateral variations in active region properties, from a center structure to an edge structure, in the example LED emitter …
FIGS. 18A-18H are cross-sectional diagrams showing steps in an example process for forming LED emitters. B₂
FIGS. 19A-19G are cross-sectional diagrams showing steps in another example process for forming LED emitters.
FIG. 81. The base regions may be combined spatially on the submount such that each base region corresponds to a type of subpixel. For instance, three base …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an LED emitter, the method comprising: providing a III-nitride layer on a substrate and having a planar top surface; selectively epitaxially growing, on each of a plurality of lateral growth regions that are discrete on the planar top surface, a base region comprising an In(x)Ga(1-x)N material extending in a direction perpendicular to the planar top surface; providing surfaces of the In(x)Ga(1-x)N material on por-tions of the base regions, the surfaces of the In(x)Ga (1-x)N material having a relaxed strain, the surfaces of the In(x)Ga(1-x)N material having a base lattice con-stant within 0.1% of a bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions comprising light-emitting layers of In(y1)Ga(1-y1)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and having an active region lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.15 and y>0.2, and wherein the base regions and LED regions form mesas, and a surface of each mesa opposite the planar top surface has a lateral dimension that is smaller than a lateral dimension of the lateral growth region.
The method of claim 1, wherein the In(x)Ga(1-x)N material relaxes during the growth of the base region.
The method of claim 1, wherein relaxation begins before 1 µm of base region material is grown.
The method of claim 1, wherein the epitaxial growth of the LED regions promotes a reduction of lateral dimensions of the LED regions above lateral growth regions.
The method of claim 1, wherein the mesas include slanted sidewalls.
The method of claim 1, further comprising depositing 5 a material on sidewalls of the mesas after epitaxial steps to passivate the mesas.
The method of claim 1, wherein the light-emitting region has total area comprising a central area corresponding to a central region and a peripheral area corresponding to a peripheral region, wherein the peripheral area is 10% or more of the total area and, during operation of the LED emitter, 5% or less of a light emitted by the active region originates from the peripheral region.
The method of claim 1, wherein the lateral growth regions are first lateral growth regions and the method further comprises: forming discrete second lateral growth regions on the planar top surface; epitaxially growing second base regions on the second lateral growth regions; epitaxially growing, on corresponding surfaces of the 25 second base regions, second LED regions comprising light-emitting layers of In(y2)Ga(1-y2)N material; forming discrete third lateral growth regions on the planar top surface; epitaxially growing third base regions on the third lateral growth regions; epitaxially growing, on corresponding surfaces of the third base regions, third LED regions comprising light-emitting layers of In(y3)Ga(1-y3)N material, wherein y1>y2>y3, and the first, second and third LED regions respectively emit red, green, and blue light during operation.
The method of claim 1, wherein the relaxed strain is a relaxed misfit strain, whose value is less than 50% of a misfit strain for In(x)Ga(1-x)N grown pseudomorphically on GaN.
The method of claim 1, wherein the epitaxial growth of the base regions and the epitaxial growth of the LED region occur in separate epitaxial steps, with the surfaces of the In(x)Ga(1-x)N material are regrowth interfaces.
The method of claim 1, wherein the base region includes separate base regions.
The method of claim 1, wherein the base region includes discrete base regions. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InGaN mesa LED emitter
RGB pixel display emitter (red, green, blue sub-pixels)
Materials described outside the worked examples.
In(x)Ga(1-x)N base region material
InxGa₁-xN
In(y1)Ga(1-y1)N light-emitting layer
Iny1Ga₁-y1N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
base lattice constant within 0.1% of bulk relaxed value | — | InxGa₁-xN |
active region lattice constant within 0.1% of base lattice constant | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
Related documents with shared materials, methods, properties, or citations.
In(y2)Ga(1-y2)N light-emitting layer (green)
Iny2Ga₁-y2N
In(y3)Ga(1-y3)N light-emitting layer (blue)
Iny3Ga₁-y3N
GaN
III-nitride layer
In(y)Ga(1-y)N
InyGa₁-yN
Thickness | 10–1000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 500–20000 nm | — |
Thickness | 500–10000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Temperature | 400–1000 °C | — |
Temperature | 500–600 °C | — |
Temperature | 400–800 °C | — |
Temperature | 450–750 °C | — |
Temperature | 550–650 °C | — |
Thickness | 2–4 nm | — |
Thickness | 2–5 nm | — |
Thickness | 620–630 nm | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–0.3 V | — |
Voltage | 0.25–0.5 V | — |
Voltage | 0.5–0.75 V | — |
Thickness | 10–100 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 75 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500000000 cm | — |
Thickness | ≤ 1000000000000000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 100000 cm | — |
Temperature | ≤ 700 °C | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 0.5 V | — |
Voltage | ≤ 0.3 V | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 1 nm | — |
Pressure | ≥ 1.2 atm | — |
Pressure | ≥ 1.5 atm | — |
Pressure | ≥ 2 atm | — |
Pressure | ≥ 5 atm | — |
Pressure | ≥ 10 atm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 20 µm | — |
Temperature | ≥ 400 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 610 nm | — |
Thickness | ≥ 615 nm | — |
Thickness | ≥ 50 nm | — |
Cited non-patent literature · 1
In(y2)Ga(1-y2)N light-emitting layer (green)
Iny2Ga₁-y2N
In(y3)Ga(1-y3)N light-emitting layer (blue)
Iny3Ga₁-y3N
GaN
III-nitride layer
In(y)Ga(1-y)N
InyGa₁-yN
Thickness | 10–1000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 500–20000 nm | — |
Thickness | 500–10000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Temperature | 400–1000 °C | — |
Temperature | 500–600 °C | — |
Temperature | 400–800 °C | — |
Temperature | 450–750 °C | — |
Temperature | 550–650 °C | — |
Thickness | 2–4 nm | — |
Thickness | 2–5 nm | — |
Thickness | 620–630 nm | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–0.3 V | — |
Voltage | 0.25–0.5 V | — |
Voltage | 0.5–0.75 V | — |
Thickness | 10–100 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 75 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500000000 cm | — |
Thickness | ≤ 1000000000000000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 100000 cm | — |
Temperature | ≤ 700 °C | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 0.5 V | — |
Voltage | ≤ 0.3 V | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 1 nm | — |
Pressure | ≥ 1.2 atm | — |
Pressure | ≥ 1.5 atm | — |
Pressure | ≥ 2 atm | — |
Pressure | ≥ 5 atm | — |
Pressure | ≥ 10 atm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 20 µm | — |
Temperature | ≥ 400 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 610 nm | — |
Thickness | ≥ 615 nm | — |
Thickness | ≥ 50 nm | — |
Cited non-patent literature · 1
In(y2)Ga(1-y2)N light-emitting layer (green)
Iny2Ga₁-y2N
In(y3)Ga(1-y3)N light-emitting layer (blue)
Iny3Ga₁-y3N
GaN
III-nitride layer
In(y)Ga(1-y)N
InyGa₁-yN
Thickness | 10–1000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 500–20000 nm | — |
Thickness | 500–10000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Temperature | 400–1000 °C | — |
Temperature | 500–600 °C | — |
Temperature | 400–800 °C | — |
Temperature | 450–750 °C | — |
Temperature | 550–650 °C | — |
Thickness | 2–4 nm | — |
Thickness | 2–5 nm | — |
Thickness | 620–630 nm | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–0.3 V | — |
Voltage | 0.25–0.5 V | — |
Voltage | 0.5–0.75 V | — |
Thickness | 10–100 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 75 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500000000 cm | — |
Thickness | ≤ 1000000000000000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 100000 cm | — |
Temperature | ≤ 700 °C | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 0.5 V | — |
Voltage | ≤ 0.3 V | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 1 nm | — |
Pressure | ≥ 1.2 atm | — |
Pressure | ≥ 1.5 atm | — |
Pressure | ≥ 2 atm | — |
Pressure | ≥ 5 atm | — |
Pressure | ≥ 10 atm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 20 µm | — |
Temperature | ≥ 400 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 610 nm | — |
Thickness | ≥ 615 nm | — |
Thickness | ≥ 50 nm | — |
Cited non-patent literature · 1
In(y2)Ga(1-y2)N light-emitting layer (green)
Iny2Ga₁-y2N
In(y3)Ga(1-y3)N light-emitting layer (blue)
Iny3Ga₁-y3N
GaN
III-nitride layer
In(y)Ga(1-y)N
InyGa₁-yN
Thickness | 10–1000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 500–20000 nm | — |
Thickness | 500–10000 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Temperature | 400–1000 °C | — |
Temperature | 500–600 °C | — |
Temperature | 400–800 °C | — |
Temperature | 450–750 °C | — |
Temperature | 550–650 °C | — |
Thickness | 2–4 nm | — |
Thickness | 2–5 nm | — |
Thickness | 620–630 nm | — |
Voltage | 0.1–1 V | — |
Voltage | 0.1–0.3 V | — |
Voltage | 0.25–0.5 V | — |
Voltage | 0.5–0.75 V | — |
Thickness | 10–100 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 75 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500000000 cm | — |
Thickness | ≤ 1000000000000000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 100000 cm | — |
Temperature | ≤ 700 °C | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 0.5 V | — |
Voltage | ≤ 0.3 V | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 1 nm | — |
Pressure | ≥ 1.2 atm | — |
Pressure | ≥ 1.5 atm | — |
Pressure | ≥ 2 atm | — |
Pressure | ≥ 5 atm | — |
Pressure | ≥ 10 atm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 20 µm | — |
Temperature | ≥ 400 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 610 nm | — |
Thickness | ≥ 615 nm | — |
Thickness | ≥ 50 nm | — |
Cited non-patent literature · 1