Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Multilayer WS₂ transistor with ultrathin amorphous Ga₂O₃ tunneling contact layer on SiO₂/Si substrate; device used for direct comparison of Ga₂O₃-contacted region and WS₂ region.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Multilayer WS₂ transistor with ultrathin amorphous Ga₂O₃ tunneling contact layer on SiO₂/Si substrate; device used for direct comparison of Ga₂O₃-contacted region and WS₂ region.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Multilayer WS₂ transistor with ultrathin amorphous Ga₂O₃ tunneling contact layer on SiO₂/Si substrate; device used for direct comparison of Ga₂O₃-contacted region and WS₂ region.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Multilayer WS₂ transistor with ultrathin amorphous Ga₂O₃ tunneling contact layer on SiO₂/Si substrate; device used for direct comparison of Ga₂O₃-contacted region and WS₂ region.
