Entropy Engineering-Regulated Electron-Phonon Coupling for Highly Efficient Photoluminescence in Se-doped WS2

Chi Zhang; Quan Shen; Mengmeng Zhang; Zhiming Deng; Taishen Wu; Xuying Zhong; Gang Ouyang; Dongsheng Tang; Qi Zheng; Jiansheng Dong; Weichang Zhou

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Entropy Engineering-Regulated Electron-Phonon Coupling for Highly Efficient Photoluminescence in Se-doped WS₂

Chi Zhang, Quan Shen, Mengmeng Zhang, Zhiming Deng et al.

2025·arXiv:2510.11081

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown triangular lateral heterostructure flake on Si/SiO₂ with central lightly Se-doped region and outer intrinsic WS₂ region; paper also discusses heavily Se-doped alloyed regions as a comparison sample class.

2 preparations2 characterizations9 properties4 figures

ExperimentalWS₂Studied MaterialWS₂(1-x)Se2xStudied MaterialWS₂(1-x)Se2xStudied Material

Intrinsic WS₂ outer-region monolayer in the lateral heterostructure, measured separately by Raman and PL.

2 preparations2 characterizations6 properties4 figures

ExperimentalWS₂Studied Material

Heavily Se-doped WS₂ alloyed region discussed as a comparison sample under strain-induced PL quenching.

2 preparations1 characterization3 figures

ExperimentalWS₂(1-x)Se2xStudied Material

Van der Waals heterostructure composed of Se-doped WS₂ and pure WS₂ exhibiting proximity-enhanced luminescence at the interface.

1 characterization3 figures

ExperimentalWS₂Studied MaterialWS₂(1-x)Se2xStudied Material

Pristine monolayer WS₂ used in first-principles calculations of band structure under biaxial strain.

No measurements recorded

Simulated Supercell DftWS₂Studied Material

Lightly Se-doped WS₂ model used in first-principles calculations; doping concentration stated as 2.08%.

No measurements recorded

Simulated Supercell DftWS₂(1-x)Se2xStudied Material

Materials

WS₂

Studied Material

Also known as

intrinsic WS₂pure WS₂

Variables

doping= undoped

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Entropy Engineering-Regulated Electron-Phonon Coupling for Highly Efficient Photoluminescence in Se-doped WS2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	2LA	350cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	E2g	354cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	A1g	418cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Mode Separation	Δω(E2g-A1g)	64cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	disorder-activated mode	376cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Raman Peak	disorder-activated mode	396cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Peak Shift	dual-peak splitting	16meV	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Estimated Doping Fraction	Se concentration upper bound	<5%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Intensity Enhancement	PL enhancement under strain	order-of-magnitude	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Ir Band Position	IR band	418cm⁻¹	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	2LA	350cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	E2g	354cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	A1g	418cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Mode Separation	Δω(E2g-A1g)	64cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	disorder-activated mode	376cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Raman Peak	disorder-activated mode	396cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Peak Shift	dual-peak splitting	16meV	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Estimated Doping Fraction	Se concentration upper bound	<5%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Intensity Enhancement	PL enhancement under strain	order-of-magnitude	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Ir Band Position	IR band	418cm⁻¹	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	2LA	350cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	E2g	354cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	A1g	418cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Mode Separation	Δω(E2g-A1g)	64cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	disorder-activated mode	376cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Raman Peak	disorder-activated mode	396cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Peak Shift	dual-peak splitting	16meV	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Estimated Doping Fraction	Se concentration upper bound	<5%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Intensity Enhancement	PL enhancement under strain	order-of-magnitude	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Ir Band Position	IR band	418cm⁻¹	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	2LA	350cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	E2g	354cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	A1g	418cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Mode Separation	Δω(E2g-A1g)	64cm⁻¹	WS₂	As-grown triangular lateral heterostructure flake on Si/SiO₂ Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Raman Peak	disorder-activated mode	376cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Raman Peak	disorder-activated mode	396cm⁻¹	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Peak Shift	dual-peak splitting	16meV	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂	Intrinsic WS₂ outer-region monolayer in the lateral heterost		—
Direct To Indirect Transition Strain	biaxial strain threshold	1%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Estimated Doping Fraction	Se concentration upper bound	<5%	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Pl Intensity Enhancement	PL enhancement under strain	order-of-magnitude	WS₂(1-x)Se2x	As-grown triangular lateral heterostructure flake on Si/SiO₂		—
Ir Band Position	IR band	418cm⁻¹	—	—	—	—