Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations5 properties2 figures
2 characterizations1 figure
8 preparations4 characterizations4 properties2 figures
8 preparations1 characterization3 properties1 figure
9 preparations
2 preparations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Roughness Rms | RMS roughness | 0.4nm | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Film Thickness | gallium oxide thickness | 3nm | — | |||
| Dielectric Constant | epsilonHfO₂ | 15 | — | |||
| Equivalent Oxide Thickness | EOT | 2.8nm | — | |||
| Equivalent Oxide Thickness | EOT | 4.4nm | — | |||
| Subthreshold Swing | SS | 74.5mV/dec | — | |||
| Gate Leakage Current Density | gate leakage current density | <10^-6A/cm2 | — | |||
| Hysteresis | gate hysteresis | negligible | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Device Fabrication Area | large-area transferred HfO₂ films | cm-size | — | |||
| Device Fabrication Area | scalability claim | wafer-scale possible | — |
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Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
High Q Hybrid Mie-Plasmonic Resonances in Van der Waals Nanoantennas on Gold Substrate
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Scalable Synthesis of Large-Area WS2 Thin Films from Tungsten Precursors by Thermal CVD and Their Application in Schottky-Barrier Solar Cells
Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS2
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations5 properties2 figures
2 characterizations1 figure
8 preparations4 characterizations4 properties2 figures
8 preparations1 characterization3 properties1 figure
9 preparations
2 preparations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Roughness Rms | RMS roughness | 0.4nm | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Film Thickness | gallium oxide thickness | 3nm | — | |||
| Dielectric Constant | epsilonHfO₂ | 15 | — | |||
| Equivalent Oxide Thickness | EOT | 2.8nm | — | |||
| Equivalent Oxide Thickness | EOT | 4.4nm | — | |||
| Subthreshold Swing | SS | 74.5mV/dec | — | |||
| Gate Leakage Current Density | gate leakage current density | <10^-6A/cm2 | — | |||
| Hysteresis | gate hysteresis | negligible | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Device Fabrication Area | large-area transferred HfO₂ films | cm-size | — | |||
| Device Fabrication Area | scalability claim | wafer-scale possible | — |
Related documents with shared materials, methods, properties, or citations.
Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
High Q Hybrid Mie-Plasmonic Resonances in Van der Waals Nanoantennas on Gold Substrate
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Scalable Synthesis of Large-Area WS2 Thin Films from Tungsten Precursors by Thermal CVD and Their Application in Schottky-Barrier Solar Cells
Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS2
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations5 properties2 figures
2 characterizations1 figure
8 preparations4 characterizations4 properties2 figures
8 preparations1 characterization3 properties1 figure
9 preparations
2 preparations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Roughness Rms | RMS roughness | 0.4nm | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Film Thickness | gallium oxide thickness | 3nm | — | |||
| Dielectric Constant | epsilonHfO₂ | 15 | — | |||
| Equivalent Oxide Thickness | EOT | 2.8nm | — | |||
| Equivalent Oxide Thickness | EOT | 4.4nm | — | |||
| Subthreshold Swing | SS | 74.5mV/dec | — | |||
| Gate Leakage Current Density | gate leakage current density | <10^-6A/cm2 | — | |||
| Hysteresis | gate hysteresis | negligible | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Device Fabrication Area | large-area transferred HfO₂ films | cm-size | — | |||
| Device Fabrication Area | scalability claim | wafer-scale possible | — |
Related documents with shared materials, methods, properties, or citations.
Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
High Q Hybrid Mie-Plasmonic Resonances in Van der Waals Nanoantennas on Gold Substrate
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Scalable Synthesis of Large-Area WS2 Thin Films from Tungsten Precursors by Thermal CVD and Their Application in Schottky-Barrier Solar Cells
Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS2
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations5 properties2 figures
2 characterizations1 figure
8 preparations4 characterizations4 properties2 figures
8 preparations1 characterization3 properties1 figure
9 preparations
2 preparations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Roughness Rms | RMS roughness | 0.4nm | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Film Thickness | gallium oxide thickness | 3nm | — | |||
| Dielectric Constant | epsilonHfO₂ | 15 | — | |||
| Equivalent Oxide Thickness | EOT | 2.8nm | — | |||
| Equivalent Oxide Thickness | EOT | 4.4nm | — | |||
| Subthreshold Swing | SS | 74.5mV/dec | — | |||
| Gate Leakage Current Density | gate leakage current density | <10^-6A/cm2 | — | |||
| Hysteresis | gate hysteresis | negligible | — | |||
| Film Thickness | HfO₂ thickness | 5nm | — | |||
| Device Fabrication Area | large-area transferred HfO₂ films | cm-size | — | |||
| Device Fabrication Area | scalability claim | wafer-scale possible | — |
Related documents with shared materials, methods, properties, or citations.
Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
High Q Hybrid Mie-Plasmonic Resonances in Van der Waals Nanoantennas on Gold Substrate
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Scalable Synthesis of Large-Area WS2 Thin Films from Tungsten Precursors by Thermal CVD and Their Application in Schottky-Barrier Solar Cells
Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS2
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
