Research paperExperimental CharacterizationHysteresis-Free High Mobility Graphene Encapsulated in Tungsten DisulfideKaruppasamy Pandian Soundarapandian, Domenico De Fazio, Sefaattin Tongay, Frank H. L. KoppensarXiv preprint·2022·10.1063/5.0151273·arXiv:2207.12836AbstractWe report the use of WS₂ as a substrate and encapsulant for graphene, and show that chemical treatment of exfoliated WS₂ with TFSI significantly suppresses hysteresis in graphene devices while preserving high room-temperature mobility. Treated WS₂/graphene/treated WS₂ heterostructures exhibit hysteresis below the noise level and mobility as high as about 6.2×10⁴ cm² V^-1 s⁻¹ at carrier density around 10¹² cm⁻².Read more
Exfoliated WS₂ flake on SiO₂/Si used as the starting material before TFSI treatment.1 preparation2 characterizations1 figureExperimentalWS₂Studied MaterialExpand
Untreated WS₂/graphene/WS₂ heterostructure used as the comparison device.2 preparations3 characterizations1 property2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
TFSI-treated WS₂/graphene/TFSI-treated WS₂ heterostructure.2 preparations3 characterizations7 properties2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
Research paperExperimental CharacterizationHysteresis-Free High Mobility Graphene Encapsulated in Tungsten DisulfideKaruppasamy Pandian Soundarapandian, Domenico De Fazio, Sefaattin Tongay, Frank H. L. KoppensarXiv preprint·2022·10.1063/5.0151273·arXiv:2207.12836AbstractWe report the use of WS₂ as a substrate and encapsulant for graphene, and show that chemical treatment of exfoliated WS₂ with TFSI significantly suppresses hysteresis in graphene devices while preserving high room-temperature mobility. Treated WS₂/graphene/treated WS₂ heterostructures exhibit hysteresis below the noise level and mobility as high as about 6.2×10⁴ cm² V^-1 s⁻¹ at carrier density around 10¹² cm⁻².Read more
Exfoliated WS₂ flake on SiO₂/Si used as the starting material before TFSI treatment.1 preparation2 characterizations1 figureExperimentalWS₂Studied MaterialExpand
Untreated WS₂/graphene/WS₂ heterostructure used as the comparison device.2 preparations3 characterizations1 property2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
TFSI-treated WS₂/graphene/TFSI-treated WS₂ heterostructure.2 preparations3 characterizations7 properties2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
Research paperExperimental CharacterizationHysteresis-Free High Mobility Graphene Encapsulated in Tungsten DisulfideKaruppasamy Pandian Soundarapandian, Domenico De Fazio, Sefaattin Tongay, Frank H. L. KoppensarXiv preprint·2022·10.1063/5.0151273·arXiv:2207.12836AbstractWe report the use of WS₂ as a substrate and encapsulant for graphene, and show that chemical treatment of exfoliated WS₂ with TFSI significantly suppresses hysteresis in graphene devices while preserving high room-temperature mobility. Treated WS₂/graphene/treated WS₂ heterostructures exhibit hysteresis below the noise level and mobility as high as about 6.2×10⁴ cm² V^-1 s⁻¹ at carrier density around 10¹² cm⁻².Read more
Exfoliated WS₂ flake on SiO₂/Si used as the starting material before TFSI treatment.1 preparation2 characterizations1 figureExperimentalWS₂Studied MaterialExpand
Untreated WS₂/graphene/WS₂ heterostructure used as the comparison device.2 preparations3 characterizations1 property2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
TFSI-treated WS₂/graphene/TFSI-treated WS₂ heterostructure.2 preparations3 characterizations7 properties2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
Research paperExperimental CharacterizationHysteresis-Free High Mobility Graphene Encapsulated in Tungsten DisulfideKaruppasamy Pandian Soundarapandian, Domenico De Fazio, Sefaattin Tongay, Frank H. L. KoppensarXiv preprint·2022·10.1063/5.0151273·arXiv:2207.12836AbstractWe report the use of WS₂ as a substrate and encapsulant for graphene, and show that chemical treatment of exfoliated WS₂ with TFSI significantly suppresses hysteresis in graphene devices while preserving high room-temperature mobility. Treated WS₂/graphene/treated WS₂ heterostructures exhibit hysteresis below the noise level and mobility as high as about 6.2×10⁴ cm² V^-1 s⁻¹ at carrier density around 10¹² cm⁻².Read more
Exfoliated WS₂ flake on SiO₂/Si used as the starting material before TFSI treatment.1 preparation2 characterizations1 figureExperimentalWS₂Studied MaterialExpand
Untreated WS₂/graphene/WS₂ heterostructure used as the comparison device.2 preparations3 characterizations1 property2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand
TFSI-treated WS₂/graphene/TFSI-treated WS₂ heterostructure.2 preparations3 characterizations7 properties2 figuresExperimentalWS₂Studied MaterialCStudied MaterialExpand