Research paper
Experimental CharacterizationTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties18 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | MoSe₂ intralayer exciton | 754nm | — | |||
| PL Peak | WSe₂ intralayer exciton | 719nm | — | |||
| Fet Threshold Voltage | critical interlayer bias for band-gap closure | 0.82V | — | |||
| Fet Carrier Concentration | Mott density | 0.810¹² cm⁻² | — | |||
| Pl Peak Shift | thermal ionization temperature | 70K | — | |||
| Fet Threshold Voltage | electron chemical potential jump | 13meV | — | |||
| Fet Threshold Voltage | hole chemical potential jump | -13meV | — | |||
| Pl Peak Shift | interlayer exciton binding energy | 20meV | — | |||
| Fet Carrier Concentration | charge-charge interaction strength alpha | -66meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-charge interaction strength beta | -35meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-exciton interaction strength g | -70meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | second-order interaction coefficient | 19meV/(10¹²cm⁻²)2 | — | |||
| Pl Peak Shift | interaction-strength crossover temperature | 40K | — | |||
| Pl Peak Shift | vertical displacement-field setting | 11V | — | |||
| Dr Feature Position | A exciton | 719nm | — | — | — | |
| Dr Feature Position | B exciton | 754nm | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging Electron-Hole Asymmetry in the Quantum Melting of Generalized Wigner Crystals
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Observation of an exciton crystal in a moiré excitonic insulator
Stability of Wigner crystals and Mott insulators in twisted moiré structures
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties18 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | MoSe₂ intralayer exciton | 754nm | — | |||
| PL Peak | WSe₂ intralayer exciton | 719nm | — | |||
| Fet Threshold Voltage | critical interlayer bias for band-gap closure | 0.82V | — | |||
| Fet Carrier Concentration | Mott density | 0.810¹² cm⁻² | — | |||
| Pl Peak Shift | thermal ionization temperature | 70K | — | |||
| Fet Threshold Voltage | electron chemical potential jump | 13meV | — | |||
| Fet Threshold Voltage | hole chemical potential jump | -13meV | — | |||
| Pl Peak Shift | interlayer exciton binding energy | 20meV | — | |||
| Fet Carrier Concentration | charge-charge interaction strength alpha | -66meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-charge interaction strength beta | -35meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-exciton interaction strength g | -70meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | second-order interaction coefficient | 19meV/(10¹²cm⁻²)2 | — | |||
| Pl Peak Shift | interaction-strength crossover temperature | 40K | — | |||
| Pl Peak Shift | vertical displacement-field setting | 11V | — | |||
| Dr Feature Position | A exciton | 719nm | — | — | — | |
| Dr Feature Position | B exciton | 754nm | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging Electron-Hole Asymmetry in the Quantum Melting of Generalized Wigner Crystals
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Observation of an exciton crystal in a moiré excitonic insulator
Stability of Wigner crystals and Mott insulators in twisted moiré structures
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties18 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | MoSe₂ intralayer exciton | 754nm | — | |||
| PL Peak | WSe₂ intralayer exciton | 719nm | — | |||
| Fet Threshold Voltage | critical interlayer bias for band-gap closure | 0.82V | — | |||
| Fet Carrier Concentration | Mott density | 0.810¹² cm⁻² | — | |||
| Pl Peak Shift | thermal ionization temperature | 70K | — | |||
| Fet Threshold Voltage | electron chemical potential jump | 13meV | — | |||
| Fet Threshold Voltage | hole chemical potential jump | -13meV | — | |||
| Pl Peak Shift | interlayer exciton binding energy | 20meV | — | |||
| Fet Carrier Concentration | charge-charge interaction strength alpha | -66meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-charge interaction strength beta | -35meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-exciton interaction strength g | -70meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | second-order interaction coefficient | 19meV/(10¹²cm⁻²)2 | — | |||
| Pl Peak Shift | interaction-strength crossover temperature | 40K | — | |||
| Pl Peak Shift | vertical displacement-field setting | 11V | — | |||
| Dr Feature Position | A exciton | 719nm | — | — | — | |
| Dr Feature Position | B exciton | 754nm | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging Electron-Hole Asymmetry in the Quantum Melting of Generalized Wigner Crystals
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Observation of an exciton crystal in a moiré excitonic insulator
Stability of Wigner crystals and Mott insulators in twisted moiré structures
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties18 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | MoSe₂ intralayer exciton | 754nm | — | |||
| PL Peak | WSe₂ intralayer exciton | 719nm | — | |||
| Fet Threshold Voltage | critical interlayer bias for band-gap closure | 0.82V | — | |||
| Fet Carrier Concentration | Mott density | 0.810¹² cm⁻² | — | |||
| Pl Peak Shift | thermal ionization temperature | 70K | — | |||
| Fet Threshold Voltage | electron chemical potential jump | 13meV | — | |||
| Fet Threshold Voltage | hole chemical potential jump | -13meV | — | |||
| Pl Peak Shift | interlayer exciton binding energy | 20meV | — | |||
| Fet Carrier Concentration | charge-charge interaction strength alpha | -66meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-charge interaction strength beta | -35meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | exciton-exciton interaction strength g | -70meV/(10¹²cm⁻²) | — | |||
| Fet Carrier Concentration | second-order interaction coefficient | 19meV/(10¹²cm⁻²)2 | — | |||
| Pl Peak Shift | interaction-strength crossover temperature | 40K | — | |||
| Pl Peak Shift | vertical displacement-field setting | 11V | — | |||
| Dr Feature Position | A exciton | 719nm | — | — | — | |
| Dr Feature Position | B exciton | 754nm | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging Electron-Hole Asymmetry in the Quantum Melting of Generalized Wigner Crystals
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Observation of an exciton crystal in a moiré excitonic insulator
Stability of Wigner crystals and Mott insulators in twisted moiré structures
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers