Research paper
Experimental CharacterizationCompetition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers
Ruishi Qi, Qize Li, Zuocheng Zhang, Zhiyuan Cui et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | hBN tunneling barrier | 2.3nm | — | |||
| Charge Gap | effective charge gap | 0.37eV | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Drag Ratio | Idrag/Idrive | 1 | — | |||
| Drag Ratio | peak drag ratio | 0.8 | — | |||
| Drag Ratio | drag ratio at QHI transition | 0 | — | |||
| Fet Sheet Resistance | contact resistance estimate | 2400ohm | — | |||
| Temperature | onset temperature scale for QO/phase transition | 5K | — | |||
| Temperature | onset temperature scale for QO/phase transition | 2K | — | |||
| Energy Scale | exciton binding energy | 20meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | hBN tunneling barrier | 2.3nm | — | |||
| Charge Gap | effective charge gap | 0.37eV | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Drag Ratio | Idrag/Idrive | 1 | — | |||
| Drag Ratio | peak drag ratio | 0.8 | — | |||
| Drag Ratio | drag ratio at QHI transition | 0 | — | |||
| Fet Sheet Resistance | contact resistance estimate | 2400ohm | — | |||
| Temperature | onset temperature scale for QO/phase transition | 5K | — | |||
| Temperature | onset temperature scale for QO/phase transition | 2K | — | |||
| Energy Scale | exciton binding energy | 20meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | hBN tunneling barrier | 2.3nm | — | |||
| Charge Gap | effective charge gap | 0.37eV | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Drag Ratio | Idrag/Idrive | 1 | — | |||
| Drag Ratio | peak drag ratio | 0.8 | — | |||
| Drag Ratio | drag ratio at QHI transition | 0 | — | |||
| Fet Sheet Resistance | contact resistance estimate | 2400ohm | — | |||
| Temperature | onset temperature scale for QO/phase transition | 5K | — | |||
| Temperature | onset temperature scale for QO/phase transition | 2K | — | |||
| Energy Scale | exciton binding energy | 20meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | hBN tunneling barrier | 2.3nm | — | |||
| Charge Gap | effective charge gap | 0.37eV | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Drag Ratio | Idrag/Idrive | 1 | — | |||
| Drag Ratio | peak drag ratio | 0.8 | — | |||
| Drag Ratio | drag ratio at QHI transition | 0 | — | |||
| Fet Sheet Resistance | contact resistance estimate | 2400ohm | — | |||
| Temperature | onset temperature scale for QO/phase transition | 5K | — | |||
| Temperature | onset temperature scale for QO/phase transition | 2K | — | |||
| Energy Scale | exciton binding energy | 20meV | — |