The carbon nanotube gatemon qubit

H. Riechert; S. Annabi; A. Peugeot; H. Duprez; M. Hantute; K. Watanabe; T. Taniguchi; E. Arrighi; J. Griesmar; J.-D. Pillet; L. Bretheau

doi:10.1126/science.aat0905

Paper details

Research paper

Experimental Characterization

The carbon nanotube gatemon qubit

H. Riechert, S. Annabi, A. Peugeot, H. Duprez et al.

arXiv preprint·2025·10.1126/science.aat0905·arXiv:2503.01978

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

1 preparation2 characterizations2 properties3 figures

ExperimentalCStudied Material

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

1 preparation2 characterizations2 properties3 figures

ExperimentalCStudied Material

Materials

carbon nanotube

Studied Material

Also known as

single-walled carbon nanotubenanotube

Variables

dimensionality= 1D

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

The carbon nanotube gatemon qubit | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	T2* coherence time	200ns	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—
Fet Carrier Concentration	critical current	8nA	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	T2* coherence time	200ns	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—
Fet Carrier Concentration	critical current	8nA	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	T2* coherence time	200ns	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—
Fet Carrier Concentration	critical current	8nA	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	T2* coherence time	200ns	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—
Fet Carrier Concentration	critical current	8nA	C	Device A carbon nanotube gatemon qubit integrated into a cQE Device B carbon nanotube gatemon qubit with similar architec		—

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

The carbon nanotube gatemon qubit

Samples

Device A carbon nanotube gatemon qubit integrated into a cQED architecture on hBN/Si with Nb-Au superconducting electrodes and an aluminum top gate.

Device B carbon nanotube gatemon qubit with similar architecture to device A, featuring slightly higher cavity resonance and larger qubit-cavity coupling.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties