Hall signal-dominated microwave transmission through graphene-loaded waveguides

S. Dietrich; A. Akbari-Sharbaf; J.H. Edgar; A. Roubos; M.L. Freeman; L.W. Engel

doi:10.48550/arxiv.2410.18271

Paper details

Research paper

Experimental Characterization

Hall signal-dominated microwave transmission through graphene-loaded waveguides

S. Dietrich, A. Akbari-Sharbaf, J.H. Edgar, A. Roubos et al.

arXiv·2024·10.48550/arxiv.2410.18271·arXiv:2410.18271

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

1 preparation1 characterization11 properties2 figures

ExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricCStudied MaterialCrCapping Or ContactAuCapping Or Contact

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

1 preparation1 characterization11 properties2 figures

ExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricCStudied MaterialCrCapping Or ContactAuCapping Or Contact

Materials

graphene

Studied Material

Variables

layer_count= monolayer

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Hall signal-dominated microwave transmission through graphene-loaded waveguides | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Device Width	graphene width	3um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	33um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	graphene width	20um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	78nm	hBN	Sample A: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	84nm	hBN	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Sample A: monolayer graphene resistively coupled to a coplan Sample B: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	1um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	33.3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	110ohm/sq	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	90ohm/sq	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	9T	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	18T	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	300mK	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	60mK	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	36mdB	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	14mdB	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-1244dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-179dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-434dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-217dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—

Properties

Type	Label	Value	Material	Sample	Source
Device Width	graphene width	3um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	33um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	graphene width	20um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	78nm	hBN	Sample A: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	84nm	hBN	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Sample A: monolayer graphene resistively coupled to a coplan Sample B: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	1um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	33.3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	110ohm/sq	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	90ohm/sq	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	9T	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	18T	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	300mK	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	60mK	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	36mdB	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	14mdB	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-1244dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-179dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-434dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-217dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—

Properties

Type	Label	Value	Material	Sample	Source
Device Width	graphene width	3um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	33um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	graphene width	20um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	78nm	hBN	Sample A: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	84nm	hBN	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Sample A: monolayer graphene resistively coupled to a coplan Sample B: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	1um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	33.3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	110ohm/sq	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	90ohm/sq	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	9T	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	18T	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	300mK	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	60mK	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	36mdB	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	14mdB	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-1244dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-179dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-434dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-217dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—

Properties

Type	Label	Value	Material	Sample	Source
Device Width	graphene width	3um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	33um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	graphene width	20um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Device Length	graphene length along CPW	3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	78nm	hBN	Sample A: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	hBN thickness	84nm	hBN	Sample B: monolayer graphene resistively coupled to a coplan	—
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Sample A: monolayer graphene resistively coupled to a coplan Sample B: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	1um	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Device Width	CPW center-line width	33.3um	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	110ohm/sq	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Sheet Resistance	room temperature resistance	90ohm/sq	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	9T	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Magnetic Field	measurement magnetic field	18T	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	300mK	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Temperature	measurement temperature	60mK	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	36mdB	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Quantum Hall Plateau Drop	average transmitted-power drop per Landau level	14mdB	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-1244dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	sensitivity	-179dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-434dB/S	C	Sample A: monolayer graphene resistively coupled to a coplan	—
Microwave Sensitivity	simple-model predicted sensitivity	-217dB/S	C	Sample B: monolayer graphene resistively coupled to a coplan	—

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Hall signal-dominated microwave transmission through graphene-loaded waveguides

Samples

Sample A: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 3 x 33 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Sample B: monolayer graphene resistively coupled to a coplanar waveguide; graphene geometry 20 x 3 µm with hBN dielectric separation and thin graphite back gate on intrinsic Si/SiO₂ substrate.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties