Research paperExperimental CharacterizationEnhanced shot noise in graphene quantum point contacts with electrostatic reconstructionM. Garg, O. Maillet, N. L. Samuelson, T. Wang et al.arXiv preprint·2025·10.48550/arxiv.2503.17209·arXiv:2503.17209AbstractShot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the competition between confinement and electronic interactions gives rise to a quantum dot located at the saddle point of the quantum point contact. We show that the presence of this quantum dot leads to a 50–100% increase in the shot noise, which we attribute to correlated charge tunneling. Our results highlight the role played by the electrostatic environment in those graphene devices.Read more
hBN-encapsulated graphene quantum point contact device with graphite gates and a low-resistivity silicon back gate embedded in the substrate.1 characterization1 property3 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCCapping Or ContactSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationEnhanced shot noise in graphene quantum point contacts with electrostatic reconstructionM. Garg, O. Maillet, N. L. Samuelson, T. Wang et al.arXiv preprint·2025·10.48550/arxiv.2503.17209·arXiv:2503.17209AbstractShot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the competition between confinement and electronic interactions gives rise to a quantum dot located at the saddle point of the quantum point contact. We show that the presence of this quantum dot leads to a 50–100% increase in the shot noise, which we attribute to correlated charge tunneling. Our results highlight the role played by the electrostatic environment in those graphene devices.Read more
hBN-encapsulated graphene quantum point contact device with graphite gates and a low-resistivity silicon back gate embedded in the substrate.1 characterization1 property3 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCCapping Or ContactSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationEnhanced shot noise in graphene quantum point contacts with electrostatic reconstructionM. Garg, O. Maillet, N. L. Samuelson, T. Wang et al.arXiv preprint·2025·10.48550/arxiv.2503.17209·arXiv:2503.17209AbstractShot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the competition between confinement and electronic interactions gives rise to a quantum dot located at the saddle point of the quantum point contact. We show that the presence of this quantum dot leads to a 50–100% increase in the shot noise, which we attribute to correlated charge tunneling. Our results highlight the role played by the electrostatic environment in those graphene devices.Read more
hBN-encapsulated graphene quantum point contact device with graphite gates and a low-resistivity silicon back gate embedded in the substrate.1 characterization1 property3 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCCapping Or ContactSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationEnhanced shot noise in graphene quantum point contacts with electrostatic reconstructionM. Garg, O. Maillet, N. L. Samuelson, T. Wang et al.arXiv preprint·2025·10.48550/arxiv.2503.17209·arXiv:2503.17209AbstractShot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the competition between confinement and electronic interactions gives rise to a quantum dot located at the saddle point of the quantum point contact. We show that the presence of this quantum dot leads to a 50–100% increase in the shot noise, which we attribute to correlated charge tunneling. Our results highlight the role played by the electrostatic environment in those graphene devices.Read more
hBN-encapsulated graphene quantum point contact device with graphite gates and a low-resistivity silicon back gate embedded in the substrate.1 characterization1 property3 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCCapping Or ContactSiSubstrate / DielectricExpand
